Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 56 з 69
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM10AM05FTG | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 1100A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 207A On-state resistance: 5mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 кількість в упаковці: 1 шт |
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| APTM10DAM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1900A Case: SP6C |
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| APTM10DAM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1900A Case: SP6C кількість в упаковці: 1 шт |
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| APTM10DAM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 207A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1100A Power dissipation: 780W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM10DAM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 207A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1100A Power dissipation: 780W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM10DHM05G | MICROCHIP (MICROSEMI) |
APTM10DHM05G Transistor modules MOSFET |
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| APTM10DSKM09T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 100A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 430A Power dissipation: 390W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM10DSKM09T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 100A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 430A Power dissipation: 390W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM10DSKM19T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM10DSKM19T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM10DUM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 100V; 370A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET x2 Pulsed drain current: 1900A Case: SP6C |
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| APTM10DUM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 100V; 370A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: MOSFET x2 Pulsed drain current: 1900A Case: SP6C кількість в упаковці: 1 шт |
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| APTM10HM05FG | MICROCHIP (MICROSEMI) |
APTM10HM05FG Transistor modules MOSFET |
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| APTM10HM09FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 430A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Power dissipation: 390W |
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| APTM10HM09FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 430A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Power dissipation: 390W кількість в упаковці: 1 шт |
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| APTM10HM19FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM10HM19FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 50A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 21mΩ Pulsed drain current: 300A Power dissipation: 208W Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM10SKM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 1900A Case: SP6C |
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| APTM10SKM02G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 370A On-state resistance: 2.5mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper Pulsed drain current: 1900A Case: SP6C кількість в упаковці: 1 шт |
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| APTM10SKM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 207A Case: SP4 Topology: buck chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1100A Power dissipation: 780W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM10SKM05TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 100V Drain current: 207A Case: SP4 Topology: buck chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1100A Power dissipation: 780W Technology: POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM10TAM09FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Technology: FREDFET; POWER MOS 5® Semiconductor structure: transistor/transistor Case: SP6P Power dissipation: 390W Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 430A |
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| APTM10TAM09FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Technology: FREDFET; POWER MOS 5® Semiconductor structure: transistor/transistor Case: SP6P Power dissipation: 390W Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 430A кількість в упаковці: 1 шт |
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| APTM10TAM19FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W Technology: FREDFET; POWER MOS 5® Semiconductor structure: transistor/transistor Case: SP6P Power dissipation: 208W Drain-source voltage: 100V Drain current: 50A On-state resistance: 21mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 300A |
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| APTM10TAM19FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W Technology: FREDFET; POWER MOS 5® Semiconductor structure: transistor/transistor Case: SP6P Power dissipation: 208W Drain-source voltage: 100V Drain current: 50A On-state resistance: 21mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 300A кількість в упаковці: 1 шт |
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| APTM10UM01FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 640A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 1.6mΩ Pulsed drain current: 2200A Power dissipation: 2.5kW Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM10UM01FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 640A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 1.6mΩ Pulsed drain current: 2200A Power dissipation: 2.5kW Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM10UM02FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW Technology: FREDFET; POWER MOS 5® Case: SP6C Drain-source voltage: 100V Drain current: 429A On-state resistance: 2.5mΩ Power dissipation: 1.66kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 1900A Semiconductor structure: single transistor |
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| APTM10UM02FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW Technology: FREDFET; POWER MOS 5® Case: SP6C Drain-source voltage: 100V Drain current: 429A On-state resistance: 2.5mΩ Power dissipation: 1.66kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 1900A Semiconductor structure: single transistor кількість в упаковці: 1 шт |
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| APTM120A15FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 0.175Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C |
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| APTM120A15FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 0.175Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Case: SP6C кількість в упаковці: 1 шт |
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| APTM120A20DG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C |
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| APTM120A20DG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C кількість в упаковці: 1 шт |
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| APTM120A20SG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Case: SP6C |
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| APTM120A20SG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Case: SP6C кількість в упаковці: 1 шт |
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| APTM120A29FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 |
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| APTM120A29FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Case: SP4 кількість в упаковці: 1 шт |
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| APTM120DA30CT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8®; SiC Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM120DA30CT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8®; SiC Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM120DA30T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM120DA30T1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM120DU15G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: common source; transistor/transistor Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 0.175Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x2 Case: SP6C |
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| APTM120DU15G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 240A Semiconductor structure: common source; transistor/transistor Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 0.175Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x2 Case: SP6C кількість в упаковці: 1 шт |
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| APTM120H140FT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 50A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 6A On-state resistance: 1.68Ω Power dissipation: 208W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP1 |
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| APTM120H140FT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 50A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 6A On-state resistance: 1.68Ω Power dissipation: 208W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP1 кількість в упаковці: 1 шт |
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| APTM120H29FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C |
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| APTM120H29FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C кількість в упаковці: 1 шт |
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| APTM120U10SAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 464A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 86A On-state resistance: 0.12Ω Power dissipation: 3.29kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Case: SP6C |
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| APTM120U10SAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 464A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 86A On-state resistance: 0.12Ω Power dissipation: 3.29kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Case: SP6C кількість в упаковці: 1 шт |
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| APTM120U10SCAVG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A Case: SP6 Drain current: 86A On-state resistance: 0.12Ω Power dissipation: 3.29kW Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Pulsed drain current: 464A Drain-source voltage: 1.2kV |
товар відсутній |
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| APTM120U10SCAVG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A Case: SP6 Drain current: 86A On-state resistance: 0.12Ω Power dissipation: 3.29kW Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: single transistor + series diode - parrallel diode Pulsed drain current: 464A Drain-source voltage: 1.2kV кількість в упаковці: 1 шт |
товар відсутній |
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| APTM120UM70DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 684A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C |
товар відсутній |
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| APTM120UM70DAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 684A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: single transistor + series diode Case: SP6C кількість в упаковці: 1 шт |
товар відсутній |
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| APTM120UM70FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Technology: FREDFET; POWER MOS 7® Case: SP6C Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 684A Semiconductor structure: single transistor |
товар відсутній |
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| APTM120UM70FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw Technology: FREDFET; POWER MOS 7® Case: SP6C Drain-source voltage: 1.2kV Drain current: 126A On-state resistance: 80mΩ Power dissipation: 5kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 684A Semiconductor structure: single transistor кількість в упаковці: 1 шт |
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| APTM20AM04FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1488A Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Type of module: MOSFET transistor |
товар відсутній |
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| APTM20AM04FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1488A Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APTM20AM05FG | MICROCHIP (MICROSEMI) |
APTM20AM05FG Transistor modules MOSFET |
товар відсутній |
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| APTM20AM06SG | MICROCHIP (MICROSEMI) |
APTM20AM06SG Transistor modules MOSFET |
товар відсутній |
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| APTM20AM08FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 832A Power dissipation: 781W Technology: FREDFET; POWER MOS 7® Drain current: 155A Drain-source voltage: 200V |
товар відсутній |
| APTM10AM05FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 1100A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 207A; SP4; Idm: 1100A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 1100A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 207A
On-state resistance: 5mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
кількість в упаковці: 1 шт
товар відсутній
| APTM10DAM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
товар відсутній
| APTM10DAM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Idm: 1900A; 1.25kW
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM10DAM05TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM10DAM05TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM10DSKM09T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM10DSKM09T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 100A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 430A
Power dissipation: 390W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM10DSKM19T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM10DSKM19T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 50A; SP3; Press-in PCB; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3
Topology: buck chopper x2; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM10DUM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
товар відсутній
| APTM10DUM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x2
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM10HM09FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
товар відсутній
| APTM10HM09FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
кількість в упаковці: 1 шт
товар відсутній
| APTM10HM19FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM10HM19FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 50A
Case: SP3F
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 21mΩ
Pulsed drain current: 300A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM10SKM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 1900A
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 1900A
Case: SP6C
товар відсутній
| APTM10SKM02G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 370A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 370A
On-state resistance: 2.5mΩ
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: buck chopper
Pulsed drain current: 1900A
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM10SKM05TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: buck chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: buck chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM10SKM05TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: buck chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: buck chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM10TAM09FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 390W
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 430A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 390W
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 430A
товар відсутній
| APTM10TAM09FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 390W
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 430A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 390W
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 430A
кількість в упаковці: 1 шт
товар відсутній
| APTM10TAM19FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 208W
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 21mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 300A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 208W
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 21mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 300A
товар відсутній
| APTM10TAM19FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 208W
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 21mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 300A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP6P; Press-in PCB; 208W
Technology: FREDFET; POWER MOS 5®
Semiconductor structure: transistor/transistor
Case: SP6P
Power dissipation: 208W
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 21mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 300A
кількість в упаковці: 1 шт
товар відсутній
| APTM10UM01FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM10UM01FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM10UM02FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW
Technology: FREDFET; POWER MOS 5®
Case: SP6C
Drain-source voltage: 100V
Drain current: 429A
On-state resistance: 2.5mΩ
Power dissipation: 1.66kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 1900A
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW
Technology: FREDFET; POWER MOS 5®
Case: SP6C
Drain-source voltage: 100V
Drain current: 429A
On-state resistance: 2.5mΩ
Power dissipation: 1.66kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 1900A
Semiconductor structure: single transistor
товар відсутній
| APTM10UM02FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW
Technology: FREDFET; POWER MOS 5®
Case: SP6C
Drain-source voltage: 100V
Drain current: 429A
On-state resistance: 2.5mΩ
Power dissipation: 1.66kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 1900A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW
Technology: FREDFET; POWER MOS 5®
Case: SP6C
Drain-source voltage: 100V
Drain current: 429A
On-state resistance: 2.5mΩ
Power dissipation: 1.66kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 1900A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM120A15FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
товар відсутній
| APTM120A15FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 45A; SP6C; Idm: 240A; 1.25kW
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM120A20DG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
товар відсутній
| APTM120A20DG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM120A20SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Case: SP6C
товар відсутній
| APTM120A20SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 200A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 0.24Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM120A29FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
товар відсутній
| APTM120A29FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP4; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Case: SP4
кількість в упаковці: 1 шт
товар відсутній
| APTM120DA30CT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM120DA30CT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM120DA30T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM120DA30T1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM120DU15G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x2
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x2
Case: SP6C
товар відсутній
| APTM120DU15G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x2
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 1.2kV; 45A; SP6C
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 240A
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 0.175Ω
Power dissipation: 1.25kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x2
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM120H140FT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 50A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 6A
On-state resistance: 1.68Ω
Power dissipation: 208W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 50A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 6A
On-state resistance: 1.68Ω
Power dissipation: 208W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
товар відсутній
| APTM120H140FT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 50A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 6A
On-state resistance: 1.68Ω
Power dissipation: 208W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 50A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 6A
On-state resistance: 1.68Ω
Power dissipation: 208W
Electrical mounting: Press-in PCB
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Case: SP1
кількість в упаковці: 1 шт
товар відсутній
| APTM120H29FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
товар відсутній
| APTM120H29FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 136A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
On-state resistance: 348mΩ
Power dissipation: 780W
Electrical mounting: FASTON connectors; screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM120U10SAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 464A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 464A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
товар відсутній
| APTM120U10SAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 464A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 464A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM120U10SCAVG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Case: SP6
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 464A
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Case: SP6
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 464A
Drain-source voltage: 1.2kV
товар відсутній
| APTM120U10SCAVG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Case: SP6
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 464A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Case: SP6
Drain current: 86A
On-state resistance: 0.12Ω
Power dissipation: 3.29kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 464A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| APTM120UM70DAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 684A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 684A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
товар відсутній
| APTM120UM70DAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 684A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Pulsed drain current: 684A
Semiconductor structure: diode/transistor
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: single transistor + series diode
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| APTM120UM70FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Technology: FREDFET; POWER MOS 7®
Case: SP6C
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 684A
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Technology: FREDFET; POWER MOS 7®
Case: SP6C
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 684A
Semiconductor structure: single transistor
товар відсутній
| APTM120UM70FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Technology: FREDFET; POWER MOS 7®
Case: SP6C
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 684A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 126A; SP6C; Idm: 684A; 5kW; screw
Technology: FREDFET; POWER MOS 7®
Case: SP6C
Drain-source voltage: 1.2kV
Drain current: 126A
On-state resistance: 80mΩ
Power dissipation: 5kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Pulsed drain current: 684A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM20AM04FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
товар відсутній
| APTM20AM04FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM20AM08FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
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