Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4106) > Сторінка 24 з 69
| Фото | Назва | Виробник | Інформація |
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| APT10026JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10026JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT10026L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω |
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| APT10026L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω кількість в упаковці: 1 шт |
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| APT10026L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω |
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| APT10026L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω кількість в упаковці: 1 шт |
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| APT10035B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ |
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| APT10035B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ кількість в упаковці: 1 шт |
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| APT10035JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 370mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10035JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 370mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT10035JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.35Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10035JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.35Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT10035LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ |
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APT10035LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ кількість в упаковці: 1 шт |
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APT10035LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.35Ω |
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APT10035LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.35Ω кількість в упаковці: 1 шт |
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APT1003RBFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω |
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APT1003RBFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω кількість в упаковці: 1 шт |
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APT1003RBLLG | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω |
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APT1003RBLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω кількість в упаковці: 1 шт |
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APT1003RKLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3 Case: TO220-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω |
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APT1003RKLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3 Case: TO220-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω кількість в упаковці: 1 шт |
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APT1003RSFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω |
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APT1003RSFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω кількість в упаковці: 1 шт |
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APT1003RSLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω |
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APT1003RSLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Case: D3PAK Mounting: SMD Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω кількість в упаковці: 1 шт |
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| APT10045B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.46Ω |
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| APT10045B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.46Ω кількість в упаковці: 1 шт |
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| APT10045B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω |
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| APT10045B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω кількість в упаковці: 1 шт |
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| APT10045JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.46Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10045JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.46Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT10045JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.45Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10045JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.45Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT10045LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.46Ω |
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APT10045LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.46Ω кількість в упаковці: 1 шт |
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APT10045LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω |
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APT10045LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 565W Polarisation: unipolar Gate charge: 154nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 92A Drain-source voltage: 1kV Drain current: 23A On-state resistance: 0.45Ω кількість в упаковці: 1 шт |
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| APT10050B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Case: TO247MAX Mounting: THT Technology: POWER MOS 5® Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Gate charge: 500nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.5Ω |
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| APT10050B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Case: TO247MAX Mounting: THT Technology: POWER MOS 5® Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Gate charge: 500nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.5Ω кількість в упаковці: 1 шт |
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| APT10050JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 19A Pulsed drain current: 76A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.5Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10050JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 19A Pulsed drain current: 76A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.5Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT10050LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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APT10050LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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APT10050LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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APT10050LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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APT10078BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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APT10078BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10078BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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APT10078BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10078SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhanced |
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APT10078SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10086BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced |
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APT10086BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10086BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced |
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APT10086BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10090BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced |
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APT10090BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT10090BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced |
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APT10090BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT10026JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10026JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10026L2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
товар відсутній
| APT10026L2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10026L2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
товар відсутній
| APT10026L2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10035B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
товар відсутній
| APT10035B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
кількість в упаковці: 1 шт
товар відсутній
| APT10035JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10035JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10035JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10035JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10035LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
товар відсутній
| APT10035LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
кількість в упаковці: 1 шт
товар відсутній
| APT10035LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.35Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.35Ω
товар відсутній
| APT10035LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.35Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.35Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1003RBFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
товар відсутній
| APT1003RBFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1003RBLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
товар відсутній
| APT1003RBLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1003RKLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Case: TO220-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Case: TO220-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
товар відсутній
| APT1003RKLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Case: TO220-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Case: TO220-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1003RSFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
товар відсутній
| APT1003RSFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1003RSLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
товар відсутній
| APT1003RSLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10045B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.46Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.46Ω
товар відсутній
| APT10045B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.46Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.46Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10045B2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
товар відсутній
| APT10045B2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10045JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10045JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10045JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10045JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 460W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10045LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.46Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.46Ω
товар відсутній
| APT10045LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.46Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.46Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10045LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
товар відсутній
| APT10045LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 565W
Polarisation: unipolar
Gate charge: 154nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 92A
Drain-source voltage: 1kV
Drain current: 23A
On-state resistance: 0.45Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10050B2VFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Gate charge: 500nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Gate charge: 500nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.5Ω
товар відсутній
| APT10050B2VFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Gate charge: 500nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.5Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Gate charge: 500nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.5Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10050JVFR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10050JVFR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10050LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1925.41 грн |
| 2+ | 1690.7 грн |
| APT10050LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2310.49 грн |
| 2+ | 2106.88 грн |
| APT10050LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2032.33 грн |
| 2+ | 1784.36 грн |
| APT10050LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2438.8 грн |
| 2+ | 2223.58 грн |
| APT10078BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT10078BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10078BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT10078BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10078SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
товар відсутній
| APT10078SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10086BVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
товар відсутній
| APT10086BVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10086BVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
товар відсутній
| APT10086BVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10090BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
товар відсутній
| APT10090BFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT10090BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
товар відсутній
| APT10090BLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній