Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4106) > Сторінка 42 з 69
| Фото | Назва | Виробник | Інформація |
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APT60DQ60BG | MICROCHIP (MICROSEMI) |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247AC; Ufmax: 2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Max. load current: 94A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO247AC Max. forward voltage: 2V Max. forward impulse current: 600A Technology: FRED кількість в упаковці: 1 шт |
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APT60DQ60SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED; automotive industry Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED Application: automotive industry |
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APT60DQ60SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED; automotive industry Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Case: D3PAK Technology: FRED Application: automotive industry кількість в упаковці: 1 шт |
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| APT60GA60JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Case: SOT227B Pulsed collector current: 178A Collector current: 60A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT60GA60JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Case: SOT227B Pulsed collector current: 178A Collector current: 60A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| APT60GF120JRD | MICROCHIP (MICROSEMI) | APT60GF120JRD IGBT modules |
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| APT60GF120JRDQ3 | MICROCHIP (MICROSEMI) |
APT60GF120JRDQ3 IGBT modules |
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| APT60M60JFLL | MICROCHIP (MICROSEMI) |
APT60M60JFLL Transistor modules MOSFET |
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| APT60M60JLL | MICROCHIP (MICROSEMI) |
APT60M60JLL Transistor modules MOSFET |
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| APT60M75JFLL | MICROCHIP (MICROSEMI) |
APT60M75JFLL Transistor modules MOSFET |
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| APT60M75JLL | MICROCHIP (MICROSEMI) |
APT60M75JLL Transistor modules MOSFET |
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| APT60M75JVR | MICROCHIP (MICROSEMI) |
APT60M75JVR Transistor modules MOSFET |
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| APT60M75L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 73A Pulsed drain current: 292A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced |
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| APT60M75L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 73A Pulsed drain current: 292A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT60M75L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 73A Pulsed drain current: 292A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced |
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| APT60M75L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 73A Pulsed drain current: 292A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT60M80L2VRG | MICROCHIP (MICROSEMI) |
APT60M80L2VRG THT N channel transistors |
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APT60N60BCSG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 230A Power dissipation: 431W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 0.19µC Kind of channel: enhanced |
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APT60N60BCSG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 230A Power dissipation: 431W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 0.19µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT60N60SCSG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 230A Power dissipation: 431W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhanced |
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APT60N60SCSG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; D3PAK Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 230A Power dissipation: 431W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT60S20B2CTG | MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 75Ax2; T-Max; Ufmax: 0.98V Mounting: THT Case: T-Max Max. off-state voltage: 200V Max. load current: 208A Max. forward voltage: 0.98V Load current: 75A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 600A Leakage current: 25mA Type of diode: Schottky rectifying |
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| APT60S20B2CTG | MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 75Ax2; T-Max; Ufmax: 0.98V Mounting: THT Case: T-Max Max. off-state voltage: 200V Max. load current: 208A Max. forward voltage: 0.98V Load current: 75A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 600A Leakage current: 25mA Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
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APT60S20BG | MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 75A; TO247-2; Ufmax: 0.98V Mounting: THT Case: TO247-2 Max. off-state voltage: 200V Max. load current: 208A Max. forward voltage: 0.98V Load current: 75A Semiconductor structure: single diode Max. forward impulse current: 600A Leakage current: 25mA Type of diode: Schottky rectifying |
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APT60S20BG | MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 75A; TO247-2; Ufmax: 0.98V Mounting: THT Case: TO247-2 Max. off-state voltage: 200V Max. load current: 208A Max. forward voltage: 0.98V Load current: 75A Semiconductor structure: single diode Max. forward impulse current: 600A Leakage current: 25mA Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
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APT60S20SG | MICROCHIP (MICROSEMI) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 75A; D3PAK Mounting: SMD Case: D3PAK Max. off-state voltage: 200V Max. load current: 208A Max. forward voltage: 0.98V Load current: 75A Semiconductor structure: single diode Max. forward impulse current: 600A Leakage current: 25mA Type of diode: Schottky rectifying |
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APT60S20SG | MICROCHIP (MICROSEMI) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 75A; D3PAK Mounting: SMD Case: D3PAK Max. off-state voltage: 200V Max. load current: 208A Max. forward voltage: 0.98V Load current: 75A Semiconductor structure: single diode Max. forward impulse current: 600A Leakage current: 25mA Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
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| APT64GA90B | MICROCHIP (MICROSEMI) |
APT64GA90B THT IGBT transistors |
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APT64GA90B2D30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; T-Max Mounting: THT Case: T-Max Gate charge: 162nC Collector-emitter voltage: 900V Collector current: 64A Gate-emitter voltage: ±30V Pulsed collector current: 193A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Turn-on time: 44ns Turn-off time: 352ns Power dissipation: 500W Type of transistor: IGBT |
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APT64GA90B2D30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; T-Max Mounting: THT Case: T-Max Gate charge: 162nC Collector-emitter voltage: 900V Collector current: 64A Gate-emitter voltage: ±30V Pulsed collector current: 193A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Turn-on time: 44ns Turn-off time: 352ns Power dissipation: 500W Type of transistor: IGBT |
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APT64GA90LD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264 Mounting: THT Case: TO264 Kind of package: tube Gate charge: 162nC Collector-emitter voltage: 900V Collector current: 64A Gate-emitter voltage: ±30V Pulsed collector current: 193A Turn-on time: 44ns Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 500W Turn-off time: 352ns Type of transistor: IGBT |
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APT64GA90LD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264 Mounting: THT Case: TO264 Kind of package: tube Gate charge: 162nC Collector-emitter voltage: 900V Collector current: 64A Gate-emitter voltage: ±30V Pulsed collector current: 193A Turn-on time: 44ns Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 500W Turn-off time: 352ns Type of transistor: IGBT |
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APT65GP60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; T-Max Mounting: THT Kind of package: tube Case: T-Max Gate charge: 0.21µC Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 96A Pulsed collector current: 250A Turn-on time: 84ns Turn-off time: 219ns Type of transistor: IGBT Power dissipation: 833W |
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APT65GP60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; T-Max Mounting: THT Kind of package: tube Case: T-Max Gate charge: 0.21µC Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 96A Pulsed collector current: 250A Turn-on time: 84ns Turn-off time: 219ns Type of transistor: IGBT Power dissipation: 833W кількість в упаковці: 1 шт |
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| APT65GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Case: SOT227B Type of module: IGBT Technology: POWER MOS 7®; PT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 250A Electrical mounting: screw Mechanical mounting: screw |
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| APT65GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Case: SOT227B Type of module: IGBT Technology: POWER MOS 7®; PT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 250A Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT65GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Case: SOT227B Type of module: IGBT Technology: POWER MOS 7®; PT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 250A Electrical mounting: screw Mechanical mounting: screw |
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| APT65GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Case: SOT227B Type of module: IGBT Technology: POWER MOS 7®; PT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 250A Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT65GP60L2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX Mounting: THT Kind of package: tube Case: TO264MAX Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 96A Pulsed collector current: 250A Turn-on time: 85ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 833W |
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APT65GP60L2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX Mounting: THT Kind of package: tube Case: TO264MAX Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 96A Pulsed collector current: 250A Turn-on time: 85ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 833W кількість в упаковці: 1 шт |
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| APT66F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Case: TO247MAX Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET |
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| APT66F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Case: TO247MAX Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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APT66F60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264 Case: TO264 Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET |
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APT66F60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264 Case: TO264 Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| APT66M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Mounting: THT Case: TO247MAX Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A |
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| APT66M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Mounting: THT Case: TO247MAX Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A кількість в упаковці: 1 шт |
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APT66M60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264 Mounting: THT Case: TO264 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A |
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APT66M60L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264 Mounting: THT Case: TO264 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A кількість в упаковці: 1 шт |
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| APT68GA60B | MICROCHIP (MICROSEMI) |
APT68GA60B THT IGBT transistors |
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APT68GA60B2D40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max Mounting: THT Gate charge: 198nC Collector-emitter voltage: 600V Collector current: 68A Gate-emitter voltage: ±30V Pulsed collector current: 202A Case: T-Max Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Turn-on time: 46ns Turn-off time: 304ns Power dissipation: 520W Type of transistor: IGBT |
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APT68GA60B2D40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max Mounting: THT Gate charge: 198nC Collector-emitter voltage: 600V Collector current: 68A Gate-emitter voltage: ±30V Pulsed collector current: 202A Case: T-Max Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Turn-on time: 46ns Turn-off time: 304ns Power dissipation: 520W Type of transistor: IGBT |
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APT68GA60LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264 Technology: POWER MOS 8®; PT Case: TO264 Mounting: THT Kind of package: tube Turn-on time: 46ns Turn-off time: 304ns Power dissipation: 520W Collector-emitter voltage: 600V Collector current: 68A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 198nC Gate-emitter voltage: ±30V Pulsed collector current: 202A Type of transistor: IGBT |
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APT68GA60LD40 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264 Technology: POWER MOS 8®; PT Case: TO264 Mounting: THT Kind of package: tube Turn-on time: 46ns Turn-off time: 304ns Power dissipation: 520W Collector-emitter voltage: 600V Collector current: 68A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 198nC Gate-emitter voltage: ±30V Pulsed collector current: 202A Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT70GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3 Mounting: THT Power dissipation: 961W Kind of package: tube Gate charge: 412nC Technology: NPT Ultra Fast IGBT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Turn-on time: 81ns Turn-off time: 394ns Type of transistor: IGBT |
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APT70GR120B2 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3 Mounting: THT Power dissipation: 961W Kind of package: tube Gate charge: 412nC Technology: NPT Ultra Fast IGBT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Turn-on time: 81ns Turn-off time: 394ns Type of transistor: IGBT кількість в упаковці: 1 шт |
товар відсутній |
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| APT70GR120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Mechanical mounting: screw Electrical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A |
товар відсутній |
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| APT70GR120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Mechanical mounting: screw Electrical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A кількість в упаковці: 1 шт |
товар відсутній |
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| APT70GR120JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Mechanical mounting: screw Electrical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A |
товар відсутній |
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| APT70GR120JD60 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Mechanical mounting: screw Electrical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A кількість в упаковці: 1 шт |
товар відсутній |
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APT70GR120L | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264 Mounting: THT Power dissipation: 961W Kind of package: tube Gate charge: 412nC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Turn-on time: 81ns Turn-off time: 394ns Type of transistor: IGBT |
товар відсутній |
| APT60DQ60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247AC; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 94A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 2V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247AC; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Max. load current: 94A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Max. forward voltage: 2V
Max. forward impulse current: 600A
Technology: FRED
кількість в упаковці: 1 шт
товар відсутній
| APT60DQ60SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED; automotive industry
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED; automotive industry
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
Application: automotive industry
товар відсутній
| APT60DQ60SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED; automotive industry
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; D3PAK; FRED; automotive industry
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Case: D3PAK
Technology: FRED
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| APT60GA60JD60 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Pulsed collector current: 178A
Collector current: 60A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Pulsed collector current: 178A
Collector current: 60A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT60GA60JD60 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Pulsed collector current: 178A
Collector current: 60A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Pulsed collector current: 178A
Collector current: 60A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT60M75L2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
товар відсутній
| APT60M75L2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT60M75L2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
товар відсутній
| APT60M75L2LLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 73A
Pulsed drain current: 292A
Power dissipation: 893W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 195nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT60M80L2VRG |
|
Виробник: MICROCHIP (MICROSEMI)
APT60M80L2VRG THT N channel transistors
APT60M80L2VRG THT N channel transistors
товар відсутній
| APT60N60BCSG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 230A
Power dissipation: 431W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 230A
Power dissipation: 431W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of channel: enhanced
товар відсутній
| APT60N60BCSG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 230A
Power dissipation: 431W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 230A
Power dissipation: 431W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT60N60SCSG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 230A
Power dissipation: 431W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 230A
Power dissipation: 431W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
товар відсутній
| APT60N60SCSG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 230A
Power dissipation: 431W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; D3PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 230A
Power dissipation: 431W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT60S20B2CTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 75Ax2; T-Max; Ufmax: 0.98V
Mounting: THT
Case: T-Max
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 75Ax2; T-Max; Ufmax: 0.98V
Mounting: THT
Case: T-Max
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
товар відсутній
| APT60S20B2CTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 75Ax2; T-Max; Ufmax: 0.98V
Mounting: THT
Case: T-Max
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 75Ax2; T-Max; Ufmax: 0.98V
Mounting: THT
Case: T-Max
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
товар відсутній
| APT60S20BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 75A; TO247-2; Ufmax: 0.98V
Mounting: THT
Case: TO247-2
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 75A; TO247-2; Ufmax: 0.98V
Mounting: THT
Case: TO247-2
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
товар відсутній
| APT60S20BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 75A; TO247-2; Ufmax: 0.98V
Mounting: THT
Case: TO247-2
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 75A; TO247-2; Ufmax: 0.98V
Mounting: THT
Case: TO247-2
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
товар відсутній
| APT60S20SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 75A; D3PAK
Mounting: SMD
Case: D3PAK
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 75A; D3PAK
Mounting: SMD
Case: D3PAK
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
товар відсутній
| APT60S20SG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 75A; D3PAK
Mounting: SMD
Case: D3PAK
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 75A; D3PAK
Mounting: SMD
Case: D3PAK
Max. off-state voltage: 200V
Max. load current: 208A
Max. forward voltage: 0.98V
Load current: 75A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Leakage current: 25mA
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
товар відсутній
| APT64GA90B2D30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 64A; 500W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 162nC
Collector-emitter voltage: 900V
Collector current: 64A
Gate-emitter voltage: ±30V
Pulsed collector current: 193A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 44ns
Turn-off time: 352ns
Power dissipation: 500W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 64A; 500W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 162nC
Collector-emitter voltage: 900V
Collector current: 64A
Gate-emitter voltage: ±30V
Pulsed collector current: 193A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 44ns
Turn-off time: 352ns
Power dissipation: 500W
Type of transistor: IGBT
товар відсутній
| APT64GA90B2D30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 64A; 500W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 162nC
Collector-emitter voltage: 900V
Collector current: 64A
Gate-emitter voltage: ±30V
Pulsed collector current: 193A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 44ns
Turn-off time: 352ns
Power dissipation: 500W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 64A; 500W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 162nC
Collector-emitter voltage: 900V
Collector current: 64A
Gate-emitter voltage: ±30V
Pulsed collector current: 193A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 44ns
Turn-off time: 352ns
Power dissipation: 500W
Type of transistor: IGBT
товар відсутній
| APT64GA90LD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264
Mounting: THT
Case: TO264
Kind of package: tube
Gate charge: 162nC
Collector-emitter voltage: 900V
Collector current: 64A
Gate-emitter voltage: ±30V
Pulsed collector current: 193A
Turn-on time: 44ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 500W
Turn-off time: 352ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264
Mounting: THT
Case: TO264
Kind of package: tube
Gate charge: 162nC
Collector-emitter voltage: 900V
Collector current: 64A
Gate-emitter voltage: ±30V
Pulsed collector current: 193A
Turn-on time: 44ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 500W
Turn-off time: 352ns
Type of transistor: IGBT
товар відсутній
| APT64GA90LD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264
Mounting: THT
Case: TO264
Kind of package: tube
Gate charge: 162nC
Collector-emitter voltage: 900V
Collector current: 64A
Gate-emitter voltage: ±30V
Pulsed collector current: 193A
Turn-on time: 44ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 500W
Turn-off time: 352ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264
Mounting: THT
Case: TO264
Kind of package: tube
Gate charge: 162nC
Collector-emitter voltage: 900V
Collector current: 64A
Gate-emitter voltage: ±30V
Pulsed collector current: 193A
Turn-on time: 44ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 500W
Turn-off time: 352ns
Type of transistor: IGBT
товар відсутній
| APT65GP60B2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; T-Max
Mounting: THT
Kind of package: tube
Case: T-Max
Gate charge: 0.21µC
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 96A
Pulsed collector current: 250A
Turn-on time: 84ns
Turn-off time: 219ns
Type of transistor: IGBT
Power dissipation: 833W
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; T-Max
Mounting: THT
Kind of package: tube
Case: T-Max
Gate charge: 0.21µC
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 96A
Pulsed collector current: 250A
Turn-on time: 84ns
Turn-off time: 219ns
Type of transistor: IGBT
Power dissipation: 833W
товар відсутній
| APT65GP60B2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; T-Max
Mounting: THT
Kind of package: tube
Case: T-Max
Gate charge: 0.21µC
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 96A
Pulsed collector current: 250A
Turn-on time: 84ns
Turn-off time: 219ns
Type of transistor: IGBT
Power dissipation: 833W
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; T-Max
Mounting: THT
Kind of package: tube
Case: T-Max
Gate charge: 0.21µC
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 96A
Pulsed collector current: 250A
Turn-on time: 84ns
Turn-off time: 219ns
Type of transistor: IGBT
Power dissipation: 833W
кількість в упаковці: 1 шт
товар відсутній
| APT65GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Type of module: IGBT
Technology: POWER MOS 7®; PT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 250A
Electrical mounting: screw
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Type of module: IGBT
Technology: POWER MOS 7®; PT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 250A
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| APT65GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Type of module: IGBT
Technology: POWER MOS 7®; PT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 250A
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Type of module: IGBT
Technology: POWER MOS 7®; PT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 250A
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT65GP60JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Type of module: IGBT
Technology: POWER MOS 7®; PT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 250A
Electrical mounting: screw
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Type of module: IGBT
Technology: POWER MOS 7®; PT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 250A
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| APT65GP60JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Type of module: IGBT
Technology: POWER MOS 7®; PT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 250A
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B
Case: SOT227B
Type of module: IGBT
Technology: POWER MOS 7®; PT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 250A
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT65GP60L2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX
Mounting: THT
Kind of package: tube
Case: TO264MAX
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±30V
Collector current: 96A
Pulsed collector current: 250A
Turn-on time: 85ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 833W
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX
Mounting: THT
Kind of package: tube
Case: TO264MAX
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±30V
Collector current: 96A
Pulsed collector current: 250A
Turn-on time: 85ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 833W
товар відсутній
| APT65GP60L2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX
Mounting: THT
Kind of package: tube
Case: TO264MAX
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±30V
Collector current: 96A
Pulsed collector current: 250A
Turn-on time: 85ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 833W
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX
Mounting: THT
Kind of package: tube
Case: TO264MAX
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±30V
Collector current: 96A
Pulsed collector current: 250A
Turn-on time: 85ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 833W
кількість в упаковці: 1 шт
товар відсутній
| APT66F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Case: TO247MAX
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Case: TO247MAX
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
товар відсутній
| APT66F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Case: TO247MAX
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Case: TO247MAX
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| APT66F60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
товар відсутній
| APT66F60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1135W
Polarisation: unipolar
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Drain-source voltage: 600V
Drain current: 44A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| APT66M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Mounting: THT
Case: TO247MAX
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Mounting: THT
Case: TO247MAX
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
товар відсутній
| APT66M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Mounting: THT
Case: TO247MAX
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W
Mounting: THT
Case: TO247MAX
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
кількість в упаковці: 1 шт
товар відсутній
| APT66M60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
товар відсутній
| APT66M60L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W; TO264
Mounting: THT
Case: TO264
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1135W
On-state resistance: 90mΩ
Drain current: 44A
Drain-source voltage: 600V
Gate charge: 330nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 245A
кількість в упаковці: 1 шт
товар відсутній
| APT68GA60B2D40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max
Mounting: THT
Gate charge: 198nC
Collector-emitter voltage: 600V
Collector current: 68A
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Case: T-Max
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max
Mounting: THT
Gate charge: 198nC
Collector-emitter voltage: 600V
Collector current: 68A
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Case: T-Max
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Type of transistor: IGBT
товар відсутній
| APT68GA60B2D40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max
Mounting: THT
Gate charge: 198nC
Collector-emitter voltage: 600V
Collector current: 68A
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Case: T-Max
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max
Mounting: THT
Gate charge: 198nC
Collector-emitter voltage: 600V
Collector current: 68A
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Case: T-Max
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Type of transistor: IGBT
товар відсутній
| APT68GA60LD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
товар відсутній
| APT68GA60LD40 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT70GR120B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
товар відсутній
| APT70GR120B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT70GR120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
товар відсутній
| APT70GR120J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
кількість в упаковці: 1 шт
товар відсутній
| APT70GR120JD60 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
товар відсутній
| APT70GR120JD60 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
кількість в упаковці: 1 шт
товар відсутній
| APT70GR120L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Mounting: THT
Power dissipation: 961W
Kind of package: tube
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 70A
Pulsed collector current: 280A
Turn-on time: 81ns
Turn-off time: 394ns
Type of transistor: IGBT
товар відсутній