Технічний опис APTM120DA30CT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W, Type of module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1.2kV, Drain current: 23A, Case: SP1, Topology: boost chopper; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 0.36Ω, Pulsed drain current: 195A, Power dissipation: 657W, Technology: POWER MOS 8®; SiC, Gate-source voltage: ±30V, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APTM120DA30CT1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTM120DA30CT1G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8®; SiC Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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APTM120DA30CT1G | Виробник : Microchip Technology |
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товар відсутній |
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APTM120DA30CT1G | Виробник : Microchip Technology |
![]() |
товар відсутній |
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APTM120DA30CT1G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8®; SiC Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |