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MPLAD30KP78CAE3 MICROCHIP (MICROSEMI) 9523-mplad30kp MPLAD30KP78CAE3 Bidirectional SMD transil diodes
товар відсутній
MPLAD6.5KP10CAE3 MICROCHIP (MICROSEMI) mplad6.5k.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
товар відсутній
MPLAD6.5KP10CAE3 MICROCHIP (MICROSEMI) mplad6.5k.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
кількість в упаковці: 1 шт
товар відсутній
MPLAD6.5KP11CA MICROCHIP (MICROSEMI) mplad6.5k.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
товар відсутній
MPLAD6.5KP11CA MICROCHIP (MICROSEMI) mplad6.5k.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
кількість в упаковці: 1 шт
товар відсутній
MSC010SDA070B MSC010SDA070B MICROCHIP (MICROSEMI) MSC010SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
120+208.19 грн
Мінімальне замовлення: 120
MSC010SDA070B MSC010SDA070B MICROCHIP (MICROSEMI) MSC010SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
кількість в упаковці: 1 шт
на замовлення 150 шт:
термін постачання 14-21 дні (днів)
120+249.83 грн
Мінімальне замовлення: 120
MSC010SDA070K MSC010SDA070K MICROCHIP (MICROSEMI) MSC010SDA070K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
2+329.23 грн
3+ 290.73 грн
10+ 286.23 грн
Мінімальне замовлення: 2
MSC010SDA070K MSC010SDA070K MICROCHIP (MICROSEMI) MSC010SDA070K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)
1+395.08 грн
3+ 362.3 грн
10+ 343.48 грн
MSC010SDA120B MSC010SDA120B MICROCHIP (MICROSEMI) MSC010SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
товар відсутній
MSC010SDA120B MSC010SDA120B MICROCHIP (MICROSEMI) MSC010SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
товар відсутній
MSC010SDA120K MSC010SDA120K MICROCHIP (MICROSEMI) MSC010SDA120K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
товар відсутній
MSC010SDA120K MSC010SDA120K MICROCHIP (MICROSEMI) MSC010SDA120K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
товар відсутній
MSC010SDA170B MSC010SDA170B MICROCHIP (MICROSEMI) MSC010SDA170B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; Ir: 10uA
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.1V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 90A
Leakage current: 10µA
Power dissipation: 71W
Type of diode: Schottky rectifying
Technology: SiC
товар відсутній
MSC010SDA170B MSC010SDA170B MICROCHIP (MICROSEMI) MSC010SDA170B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; Ir: 10uA
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.1V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 90A
Leakage current: 10µA
Power dissipation: 71W
Type of diode: Schottky rectifying
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
MSC015SDA120B MSC015SDA120B MICROCHIP (MICROSEMI) MSC015SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
товар відсутній
MSC015SDA120B MSC015SDA120B MICROCHIP (MICROSEMI) MSC015SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
кількість в упаковці: 1 шт
товар відсутній
MSC015SDA120K MSC015SDA120K MICROCHIP (MICROSEMI) MSC015SDA120K.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
товар відсутній
MSC015SDA120K MSC015SDA120K MICROCHIP (MICROSEMI) MSC015SDA120K.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
кількість в упаковці: 1 шт
товар відсутній
MSC015SMA070B MSC015SMA070B MICROCHIP (MICROSEMI) 1244454-msc015sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+2356.28 грн
2+ 2068.83 грн
3+ 2068.08 грн
10+ 1988.66 грн
MSC015SMA070B MSC015SMA070B MICROCHIP (MICROSEMI) 1244454-msc015sma070b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
1+2827.53 грн
2+ 2578.08 грн
3+ 2481.7 грн
10+ 2386.39 грн
MSC015SMA070B4 MSC015SMA070B4 MICROCHIP (MICROSEMI) 1244686-msc015sma070b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
MSC015SMA070B4 MSC015SMA070B4 MICROCHIP (MICROSEMI) 1244686-msc015sma070b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MSC015SMA070S MSC015SMA070S MICROCHIP (MICROSEMI) 1244455-msc015sma070s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 89A
Pulsed drain current: 315A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 215nC
Kind of channel: enhanced
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+2337.72 грн
2+ 2052.35 грн
MSC015SMA070S MSC015SMA070S MICROCHIP (MICROSEMI) 1244455-msc015sma070s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 89A
Pulsed drain current: 315A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)
1+2805.26 грн
2+ 2557.54 грн
MSC017SMA120B MICROCHIP (MICROSEMI) MSC017SMA120B.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
товар відсутній
MSC017SMA120B MICROCHIP (MICROSEMI) MSC017SMA120B.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MSC017SMA120B4 MICROCHIP (MICROSEMI) MSC017SMA120B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
MSC017SMA120B4 MICROCHIP (MICROSEMI) MSC017SMA120B4.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
MSC020SDA120B MSC020SDA120B MICROCHIP (MICROSEMI) MSC020SDA120B.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
товар відсутній
MSC020SDA120B MSC020SDA120B MICROCHIP (MICROSEMI) MSC020SDA120B.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
MSC020SDA120K MSC020SDA120K MICROCHIP (MICROSEMI) MSC020SDA120K.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
товар відсутній
MSC020SDA120K MSC020SDA120K MICROCHIP (MICROSEMI) MSC020SDA120K.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
MSC025SMA120B MSC025SMA120B MICROCHIP (MICROSEMI) 1243495-msc025sma120b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+2528.96 грн
25+ 2258.41 грн
MSC025SMA120B MSC025SMA120B MICROCHIP (MICROSEMI) 1243495-msc025sma120b-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
1+3034.76 грн
25+ 2814.32 грн
MSC025SMA120B4 MSC025SMA120B4 MICROCHIP (MICROSEMI) 1244597-msc025sma120b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
MSC025SMA120B4 MSC025SMA120B4 MICROCHIP (MICROSEMI) 1244597-msc025sma120b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
MSC025SMA120J MSC025SMA120J MICROCHIP (MICROSEMI) 1243808-msc025sma120j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
MSC025SMA120J MSC025SMA120J MICROCHIP (MICROSEMI) 1243808-msc025sma120j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
MSC025SMA120S MSC025SMA120S MICROCHIP (MICROSEMI) 1244480-msc025sma120s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
товар відсутній
MSC025SMA120S MSC025SMA120S MICROCHIP (MICROSEMI) 1244480-msc025sma120s-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070B MSC030SDA070B MICROCHIP (MICROSEMI) MSC030SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
товар відсутній
MSC030SDA070B MSC030SDA070B MICROCHIP (MICROSEMI) MSC030SDA070B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070BCT MSC030SDA070BCT MICROCHIP (MICROSEMI) MSC030SDA070BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
товар відсутній
MSC030SDA070BCT MSC030SDA070BCT MICROCHIP (MICROSEMI) MSC030SDA070BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070K MSC030SDA070K MICROCHIP (MICROSEMI) MSC030SDA070K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
товар відсутній
MSC030SDA070K MSC030SDA070K MICROCHIP (MICROSEMI) MSC030SDA070K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070S MSC030SDA070S MICROCHIP (MICROSEMI) MSC030SDA070S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
товар відсутній
MSC030SDA070S MSC030SDA070S MICROCHIP (MICROSEMI) MSC030SDA070S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120B MSC030SDA120B MICROCHIP (MICROSEMI) MSC030SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
товар відсутній
MSC030SDA120B MSC030SDA120B MICROCHIP (MICROSEMI) MSC030SDA120B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120BCT MSC030SDA120BCT MICROCHIP (MICROSEMI) MSC030SDA120BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
товар відсутній
MSC030SDA120BCT MSC030SDA120BCT MICROCHIP (MICROSEMI) MSC030SDA120BCT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120K MSC030SDA120K MICROCHIP (MICROSEMI) MSC030SDA120K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
товар відсутній
MSC030SDA120K MSC030SDA120K MICROCHIP (MICROSEMI) MSC030SDA120K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120S MSC030SDA120S MICROCHIP (MICROSEMI) MSC030SDA120S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
товар відсутній
MSC030SDA120S MSC030SDA120S MICROCHIP (MICROSEMI) MSC030SDA120S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA170B MSC030SDA170B MICROCHIP (MICROSEMI) MSC030SDA170B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; TO247-2; Ir: 125uA
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 353A
Leakage current: 125µA
Power dissipation: 186W
Type of diode: Schottky rectifying
Technology: SiC
товар відсутній
MSC030SDA170B MSC030SDA170B MICROCHIP (MICROSEMI) MSC030SDA170B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; TO247-2; Ir: 125uA
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 353A
Leakage current: 125µA
Power dissipation: 186W
Type of diode: Schottky rectifying
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA330B MICROCHIP (MICROSEMI) MSC030SDA330B.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
товар відсутній
MPLAD30KP78CAE3 9523-mplad30kp
Виробник: MICROCHIP (MICROSEMI)
MPLAD30KP78CAE3 Bidirectional SMD transil diodes
товар відсутній
MPLAD6.5KP10CAE3 mplad6.5k.pdf
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
товар відсутній
MPLAD6.5KP10CAE3 mplad6.5k.pdf
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 11.1÷12.3V; 383A; bidirectional; PLAD
Type of diode: TVS
Peak pulse power dissipation: 6.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 383A
Semiconductor structure: bidirectional
Case: PLAD
Mounting: SMD
Leakage current: 15µA
кількість в упаковці: 1 шт
товар відсутній
MPLAD6.5KP11CA mplad6.5k.pdf
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
товар відсутній
MPLAD6.5KP11CA mplad6.5k.pdf
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.5kW; 12.2÷13.5V; 358A; bidirectional; PLAD
Mounting: SMD
Case: PLAD
Type of diode: TVS
Breakdown voltage: 12.2...13.5V
Peak pulse power dissipation: 6.5kW
Leakage current: 10µA
Max. forward impulse current: 358A
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
кількість в упаковці: 1 шт
товар відсутній
MSC010SDA070B MSC010SDA070B.pdf
MSC010SDA070B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
120+208.19 грн
Мінімальне замовлення: 120
MSC010SDA070B MSC010SDA070B.pdf
MSC010SDA070B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Technology: SiC
Power dissipation: 36W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 1.9V
кількість в упаковці: 1 шт
на замовлення 150 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
120+249.83 грн
Мінімальне замовлення: 120
MSC010SDA070K MSC010SDA070K.pdf
MSC010SDA070K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+329.23 грн
3+ 290.73 грн
10+ 286.23 грн
Мінімальне замовлення: 2
MSC010SDA070K MSC010SDA070K.pdf
MSC010SDA070K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 38W; TO220-2
Technology: SiC
Power dissipation: 38W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 700V
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 58A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+395.08 грн
3+ 362.3 грн
10+ 343.48 грн
MSC010SDA120B MSC010SDA120B.pdf
MSC010SDA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
товар відсутній
MSC010SDA120B MSC010SDA120B.pdf
MSC010SDA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 50W; TO247-2
Technology: SiC
Power dissipation: 50W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
товар відсутній
MSC010SDA120K MSC010SDA120K.pdf
MSC010SDA120K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
товар відсутній
MSC010SDA120K MSC010SDA120K.pdf
MSC010SDA120K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
товар відсутній
MSC010SDA170B MSC010SDA170B.pdf
MSC010SDA170B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; Ir: 10uA
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.1V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 90A
Leakage current: 10µA
Power dissipation: 71W
Type of diode: Schottky rectifying
Technology: SiC
товар відсутній
MSC010SDA170B MSC010SDA170B.pdf
MSC010SDA170B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; Ir: 10uA
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.1V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 90A
Leakage current: 10µA
Power dissipation: 71W
Type of diode: Schottky rectifying
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
MSC015SDA120B MSC015SDA120B.pdf
MSC015SDA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
товар відсутній
MSC015SDA120B MSC015SDA120B.pdf
MSC015SDA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
кількість в упаковці: 1 шт
товар відсутній
MSC015SDA120K MSC015SDA120K.PDF
MSC015SDA120K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
товар відсутній
MSC015SDA120K MSC015SDA120K.PDF
MSC015SDA120K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
кількість в упаковці: 1 шт
товар відсутній
MSC015SMA070B 1244454-msc015sma070b-datasheet
MSC015SMA070B
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2356.28 грн
2+ 2068.83 грн
3+ 2068.08 грн
10+ 1988.66 грн
MSC015SMA070B 1244454-msc015sma070b-datasheet
MSC015SMA070B
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2827.53 грн
2+ 2578.08 грн
3+ 2481.7 грн
10+ 2386.39 грн
MSC015SMA070B4 1244686-msc015sma070b4-datasheet
MSC015SMA070B4
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
MSC015SMA070B4 1244686-msc015sma070b4-datasheet
MSC015SMA070B4
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MSC015SMA070S 1244455-msc015sma070s-datasheet
MSC015SMA070S
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 89A
Pulsed drain current: 315A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 215nC
Kind of channel: enhanced
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2337.72 грн
2+ 2052.35 грн
MSC015SMA070S 1244455-msc015sma070s-datasheet
MSC015SMA070S
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 89A
Pulsed drain current: 315A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2805.26 грн
2+ 2557.54 грн
MSC017SMA120B MSC017SMA120B.PDF
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
товар відсутній
MSC017SMA120B MSC017SMA120B.PDF
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MSC017SMA120B4 MSC017SMA120B4.PDF
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
MSC017SMA120B4 MSC017SMA120B4.PDF
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
MSC020SDA120B MSC020SDA120B.PDF
MSC020SDA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
товар відсутній
MSC020SDA120B MSC020SDA120B.PDF
MSC020SDA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
MSC020SDA120K MSC020SDA120K.PDF
MSC020SDA120K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
товар відсутній
MSC020SDA120K MSC020SDA120K.PDF
MSC020SDA120K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
MSC025SMA120B 1243495-msc025sma120b-datasheet
MSC025SMA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2528.96 грн
25+ 2258.41 грн
MSC025SMA120B 1243495-msc025sma120b-datasheet
MSC025SMA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3034.76 грн
25+ 2814.32 грн
MSC025SMA120B4 1244597-msc025sma120b4-datasheet
MSC025SMA120B4
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
MSC025SMA120B4 1244597-msc025sma120b4-datasheet
MSC025SMA120B4
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
MSC025SMA120J 1243808-msc025sma120j-datasheet
MSC025SMA120J
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
MSC025SMA120J 1243808-msc025sma120j-datasheet
MSC025SMA120J
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
MSC025SMA120S 1244480-msc025sma120s-datasheet
MSC025SMA120S
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
товар відсутній
MSC025SMA120S 1244480-msc025sma120s-datasheet
MSC025SMA120S
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070B MSC030SDA070B.pdf
MSC030SDA070B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
товар відсутній
MSC030SDA070B MSC030SDA070B.pdf
MSC030SDA070B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070BCT MSC030SDA070BCT.pdf
MSC030SDA070BCT
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
товар відсутній
MSC030SDA070BCT MSC030SDA070BCT.pdf
MSC030SDA070BCT
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070K MSC030SDA070K.pdf
MSC030SDA070K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
товар відсутній
MSC030SDA070K MSC030SDA070K.pdf
MSC030SDA070K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070S MSC030SDA070S.pdf
MSC030SDA070S
Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
товар відсутній
MSC030SDA070S MSC030SDA070S.pdf
MSC030SDA070S
Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120B MSC030SDA120B.pdf
MSC030SDA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
товар відсутній
MSC030SDA120B MSC030SDA120B.pdf
MSC030SDA120B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120BCT MSC030SDA120BCT.pdf
MSC030SDA120BCT
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
товар відсутній
MSC030SDA120BCT MSC030SDA120BCT.pdf
MSC030SDA120BCT
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120K MSC030SDA120K.pdf
MSC030SDA120K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
товар відсутній
MSC030SDA120K MSC030SDA120K.pdf
MSC030SDA120K
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120S MSC030SDA120S.pdf
MSC030SDA120S
Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
товар відсутній
MSC030SDA120S MSC030SDA120S.pdf
MSC030SDA120S
Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA170B MSC030SDA170B.pdf
MSC030SDA170B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; TO247-2; Ir: 125uA
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 353A
Leakage current: 125µA
Power dissipation: 186W
Type of diode: Schottky rectifying
Technology: SiC
товар відсутній
MSC030SDA170B MSC030SDA170B.pdf
MSC030SDA170B
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; TO247-2; Ir: 125uA
Mounting: THT
Case: TO247-2
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.25V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 353A
Leakage current: 125µA
Power dissipation: 186W
Type of diode: Schottky rectifying
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA330B MSC030SDA330B.PDF
Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
товар відсутній
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