Технічний опис APTM10SKM05TG Microchip Technology
Description: MOSFET N-CH 100V 278A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 278A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: SP4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Інші пропозиції APTM10SKM05TG
Фото | Назва | Виробник | Інформація |
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APTM10SKM05TG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Semiconductor structure: diode/transistor Case: SP4 Technology: POWER MOS 5® Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 207A Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 1100A Power dissipation: 780W Drain-source voltage: 100V On-state resistance: 5mΩ кількість в упаковці: 1 шт |
товар відсутній |
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APTM10SKM05TG | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 278A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: SP4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
товар відсутній |
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APTM10SKM05TG | Виробник : Microchip Technology |
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товар відсутній |
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APTM10SKM05TG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Semiconductor structure: diode/transistor Case: SP4 Technology: POWER MOS 5® Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 207A Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 1100A Power dissipation: 780W Drain-source voltage: 100V On-state resistance: 5mΩ |
товар відсутній |