Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 36 з 69
| Фото | Назва | Виробник | Інформація |
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| APT40DR160HJ | MICROCHIP (MICROSEMI) |
 Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A Leads: M4 screws Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 40A Max. forward impulse current: 0.4kA Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Case: SOT227B |
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| APT40DR160HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A Leads: M4 screws Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 40A Max. forward impulse current: 0.4kA Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Case: SOT227B кількість в упаковці: 1 шт |
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| APT40GF120JRD | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: NPT Mechanical mounting: screw |
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| APT40GF120JRD | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT40GF120JRDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: Fast IGBT; FRED; NPT Mechanical mounting: screw |
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| APT40GF120JRDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: Fast IGBT; FRED; NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT40GL120JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Technology: Field Stop; Trench Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: SOT227B Application: motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: boost chopper Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 70A |
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| APT40GL120JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Technology: Field Stop; Trench Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: SOT227B Application: motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: boost chopper Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 70A кількість в упаковці: 1 шт |
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| APT40GL120JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Technology: Field Stop; Trench Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: SOT227B Application: motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: buck chopper Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 70A |
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| APT40GL120JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Technology: Field Stop; Trench Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: SOT227B Application: motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: buck chopper Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 70A кількість в упаковці: 1 шт |
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| APT40GLQ120JCU2 | MICROCHIP (MICROSEMI) |
APT40GLQ120JCU2 IGBT modules |
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APT40GP60B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max Mounting: THT Case: T-Max Gate charge: 135nC Collector-emitter voltage: 600V Collector current: 62A Gate-emitter voltage: ±20V Pulsed collector current: 160A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 7®; PT Turn-on time: 49ns Turn-off time: 160ns Power dissipation: 543W Type of transistor: IGBT |
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APT40GP60B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max Mounting: THT Case: T-Max Gate charge: 135nC Collector-emitter voltage: 600V Collector current: 62A Gate-emitter voltage: ±20V Pulsed collector current: 160A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 7®; PT Turn-on time: 49ns Turn-off time: 160ns Power dissipation: 543W Type of transistor: IGBT |
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| APT40GP60BG | MICROCHIP (MICROSEMI) |
APT40GP60BG THT IGBT transistors |
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| APT40GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT40GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| APT40GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT40GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| APT40GP90B2DQ2G | MICROCHIP (MICROSEMI) |
APT40GP90B2DQ2G THT IGBT transistors |
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| APT40GP90BG | MICROCHIP (MICROSEMI) |
APT40GP90BG THT IGBT transistors |
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| APT40GP90J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 900V Collector current: 32A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 160A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
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| APT40GP90J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 900V Collector current: 32A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 160A Technology: POWER MOS 7®; PT Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT40GP90JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 900V Collector current: 27A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 160A Power dissipation: 284W Technology: POWER MOS 7® Mechanical mounting: screw |
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APT40GP90JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 900V Collector current: 27A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 160A Power dissipation: 284W Technology: POWER MOS 7® Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT40GR120B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3 Mounting: THT Power dissipation: 500W Kind of package: tube Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT |
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APT40GR120B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3 Mounting: THT Power dissipation: 500W Kind of package: tube Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT40GR120B2D30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max Mounting: THT Power dissipation: 500W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT |
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APT40GR120B2D30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max Mounting: THT Power dissipation: 500W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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APT40GR120S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK Mounting: SMD Power dissipation: 500W Kind of package: tube Gate charge: 0.21µC Technology: NPT Ultra Fast IGBT Part status: Not recommended for new designs Case: D3PAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT |
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APT40GR120S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK Mounting: SMD Power dissipation: 500W Kind of package: tube Gate charge: 0.21µC Technology: NPT Ultra Fast IGBT Part status: Not recommended for new designs Case: D3PAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT кількість в упаковці: 1 шт |
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| APT40M35JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V Mechanical mounting: screw Gate-source voltage: ±30V Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 400V Drain current: 93A On-state resistance: 35mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT40M35JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V Mechanical mounting: screw Gate-source voltage: ±30V Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 400V Drain current: 93A On-state resistance: 35mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT40M70JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V Mechanical mounting: screw Gate-source voltage: ±30V Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 400V Drain current: 53A On-state resistance: 70mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT40M70JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V Mechanical mounting: screw Gate-source voltage: ±30V Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 400V Drain current: 53A On-state resistance: 70mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT40M70LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 400V Drain current: 57A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 495nC Kind of channel: enhanced |
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APT40M70LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 400V Drain current: 57A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 495nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT40N60JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 30A Case: ISOTOP Topology: boost chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 70mΩ Pulsed drain current: 120A Power dissipation: 290W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw |
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| APT40N60JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 30A Case: ISOTOP Topology: boost chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 70mΩ Pulsed drain current: 120A Power dissipation: 290W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APT40N60JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 30A Case: ISOTOP Topology: buck chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 70mΩ Pulsed drain current: 120A Power dissipation: 290W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw |
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| APT40N60JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 30A Case: ISOTOP Topology: buck chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 70mΩ Pulsed drain current: 120A Power dissipation: 290W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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APT41F100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W Semiconductor structure: single transistor Case: ISOTOP Power dissipation: 960W Technology: POWER MOS 8® Electrical mounting: screw Pulsed drain current: 260A Polarisation: unipolar Drain current: 42A Kind of channel: enhanced Drain-source voltage: 1kV Mechanical mounting: screw Gate-source voltage: ±30V Type of module: MOSFET transistor On-state resistance: 0.2Ω |
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APT41F100J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W Semiconductor structure: single transistor Case: ISOTOP Power dissipation: 960W Technology: POWER MOS 8® Electrical mounting: screw Pulsed drain current: 260A Polarisation: unipolar Drain current: 42A Kind of channel: enhanced Drain-source voltage: 1kV Mechanical mounting: screw Gate-source voltage: ±30V Type of module: MOSFET transistor On-state resistance: 0.2Ω кількість в упаковці: 1 шт |
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| APT41M80B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW Case: TO247MAX Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® |
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| APT41M80B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW Case: TO247MAX Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® кількість в упаковці: 1 шт |
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APT41M80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264 Case: TO264 Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® |
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APT41M80L | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264 Case: TO264 Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® кількість в упаковці: 1 шт |
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APT42F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 135A Power dissipation: 625W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 170nC Kind of channel: enhanced |
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APT42F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 135A Power dissipation: 625W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 170nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT43F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced |
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| APT43F60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT43F60L | MICROCHIP (MICROSEMI) |
APT43F60L THT N channel transistors |
товар відсутній |
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| APT43GA90B | MICROCHIP (MICROSEMI) |
APT43GA90B THT IGBT transistors |
товар відсутній |
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APT43GA90BD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3 Mounting: THT Case: TO247-3 Gate charge: 116nC Collector-emitter voltage: 900V Collector current: 43A Gate-emitter voltage: ±30V Pulsed collector current: 129A Turn-on time: 28ns Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 337W Turn-off time: 246ns Type of transistor: IGBT |
товар відсутній |
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APT43GA90BD30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3 Mounting: THT Case: TO247-3 Gate charge: 116nC Collector-emitter voltage: 900V Collector current: 43A Gate-emitter voltage: ±30V Pulsed collector current: 129A Turn-on time: 28ns Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 337W Turn-off time: 246ns Type of transistor: IGBT |
товар відсутній |
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| APT43M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced |
товар відсутній |
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| APT43M60B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Pulsed drain current: 160A Power dissipation: 780W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| APT43M60L | MICROCHIP (MICROSEMI) |
APT43M60L THT N channel transistors |
товар відсутній |
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| APT44F80B2 | MICROCHIP (MICROSEMI) |
APT44F80B2 THT N channel transistors |
товар відсутній |
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| APT44F80L | MICROCHIP (MICROSEMI) |
APT44F80L THT N channel transistors |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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| APT44GA60B | MICROCHIP (MICROSEMI) |
APT44GA60B THT IGBT transistors |
товар відсутній |
| APT40DR160HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
товар відсутній
| APT40DR160HJ |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
кількість в упаковці: 1 шт
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
кількість в упаковці: 1 шт
товар відсутній
| APT40GF120JRD |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: NPT
Mechanical mounting: screw
товар відсутній
| APT40GF120JRD |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT40GF120JRDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: Fast IGBT; FRED; NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: Fast IGBT; FRED; NPT
Mechanical mounting: screw
товар відсутній
| APT40GF120JRDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: Fast IGBT; FRED; NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: Fast IGBT; FRED; NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT40GL120JU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
товар відсутній
| APT40GL120JU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
кількість в упаковці: 1 шт
товар відсутній
| APT40GL120JU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
товар відсутній
| APT40GL120JU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
кількість в упаковці: 1 шт
товар відсутній
| APT40GP60B2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
товар відсутній
| APT40GP60B2DQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
товар відсутній
| APT40GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT40GP60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT40GP60JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT40GP60JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT40GP90J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 32A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 32A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
товар відсутній
| APT40GP90J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 32A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 32A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT40GP90JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 27A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Power dissipation: 284W
Technology: POWER MOS 7®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 27A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Power dissipation: 284W
Technology: POWER MOS 7®
Mechanical mounting: screw
товар відсутній
| APT40GP90JDQ2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 27A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Power dissipation: 284W
Technology: POWER MOS 7®
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 27A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Power dissipation: 284W
Technology: POWER MOS 7®
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT40GR120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
товар відсутній
| APT40GR120B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT40GR120B2D30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
товар відсутній
| APT40GR120B2D30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT40GR120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK
Mounting: SMD
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT Ultra Fast IGBT
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK
Mounting: SMD
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT Ultra Fast IGBT
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
товар відсутній
| APT40GR120S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK
Mounting: SMD
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT Ultra Fast IGBT
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK
Mounting: SMD
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT Ultra Fast IGBT
Part status: Not recommended for new designs
Case: D3PAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
| APT40M35JVR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 93A
On-state resistance: 35mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 93A
On-state resistance: 35mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
товар відсутній
| APT40M35JVR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 93A
On-state resistance: 35mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 93A
On-state resistance: 35mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT40M70JVR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 53A
On-state resistance: 70mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 53A
On-state resistance: 70mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
товар відсутній
| APT40M70JVR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 53A
On-state resistance: 70mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 53A
On-state resistance: 70mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT40M70LVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 57A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 495nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 57A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 495nC
Kind of channel: enhanced
товар відсутній
| APT40M70LVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 57A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 495nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 57A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 495nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT40N60JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 30A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 120A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 30A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 120A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APT40N60JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 30A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 120A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 30A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 120A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT40N60JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 30A
Case: ISOTOP
Topology: buck chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 120A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 30A
Case: ISOTOP
Topology: buck chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 120A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| APT40N60JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 30A
Case: ISOTOP
Topology: buck chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 120A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 30A
Case: ISOTOP
Topology: buck chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 120A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APT41F100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W
Semiconductor structure: single transistor
Case: ISOTOP
Power dissipation: 960W
Technology: POWER MOS 8®
Electrical mounting: screw
Pulsed drain current: 260A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 1kV
Mechanical mounting: screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
On-state resistance: 0.2Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W
Semiconductor structure: single transistor
Case: ISOTOP
Power dissipation: 960W
Technology: POWER MOS 8®
Electrical mounting: screw
Pulsed drain current: 260A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 1kV
Mechanical mounting: screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
On-state resistance: 0.2Ω
товар відсутній
| APT41F100J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W
Semiconductor structure: single transistor
Case: ISOTOP
Power dissipation: 960W
Technology: POWER MOS 8®
Electrical mounting: screw
Pulsed drain current: 260A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 1kV
Mechanical mounting: screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
On-state resistance: 0.2Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W
Semiconductor structure: single transistor
Case: ISOTOP
Power dissipation: 960W
Technology: POWER MOS 8®
Electrical mounting: screw
Pulsed drain current: 260A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 1kV
Mechanical mounting: screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
On-state resistance: 0.2Ω
кількість в упаковці: 1 шт
товар відсутній
| APT41M80B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW
Case: TO247MAX
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW
Case: TO247MAX
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
товар відсутній
| APT41M80B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW
Case: TO247MAX
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW
Case: TO247MAX
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
товар відсутній
| APT41M80L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
товар відсутній
| APT41M80L |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW; TO264
Case: TO264
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
товар відсутній
| APT42F50S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
товар відсутній
| APT42F50S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 135A; 625W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 135A
Power dissipation: 625W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT43F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
| APT43F60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT43GA90BD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Gate charge: 116nC
Collector-emitter voltage: 900V
Collector current: 43A
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 337W
Turn-off time: 246ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Gate charge: 116nC
Collector-emitter voltage: 900V
Collector current: 43A
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 337W
Turn-off time: 246ns
Type of transistor: IGBT
товар відсутній
| APT43GA90BD30 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Gate charge: 116nC
Collector-emitter voltage: 900V
Collector current: 43A
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 337W
Turn-off time: 246ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3
Mounting: THT
Case: TO247-3
Gate charge: 116nC
Collector-emitter voltage: 900V
Collector current: 43A
Gate-emitter voltage: ±30V
Pulsed collector current: 129A
Turn-on time: 28ns
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 337W
Turn-off time: 246ns
Type of transistor: IGBT
товар відсутній
| APT43M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
| APT43M60B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 160A; 780W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 780W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT44F80L |
|
Виробник: MICROCHIP (MICROSEMI)
APT44F80L THT N channel transistors
APT44F80L THT N channel transistors
на замовлення 6 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1682.36 грн |
| 2+ | 1590.66 грн |