Технічний опис APTM120H29FG Microchip Technology
Description: MOSFET 4N-CH 1200V 34A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 780W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 34A, Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V, Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP6.
Інші пропозиції APTM120H29FG
Фото | Назва | Виробник | Інформація |
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APTM120H29FG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C кількість в упаковці: 1 шт |
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APTM120H29FG | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 780W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
товар відсутній |
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APTM120H29FG | Виробник : Microchip Technology |
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товар відсутній |
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APTM120H29FG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 25A; SP6C; Idm: 136A; 780W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 136A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 348mΩ Power dissipation: 780W Electrical mounting: FASTON connectors; screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Case: SP6C |
товар відсутній |