Технічний опис APTM120A20DG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 200A, Semiconductor structure: diode/transistor, Drain-source voltage: 1.2kV, Drain current: 37A, On-state resistance: 0.24Ω, Power dissipation: 1.25kW, Electrical mounting: FASTON connectors; screw, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes, Case: SP6C, кількість в упаковці: 1 шт.
Інші пропозиції APTM120A20DG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTM120A20DG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C кількість в упаковці: 1 шт |
товар відсутній |
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APTM120A20DG | Виробник : Microchip Technology |
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товар відсутній |
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APTM120A20DG | Виробник : Microchip Technology |
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товар відсутній |
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APTM120A20DG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 37A; SP6C; Idm: 200A; 1.25kW; screw Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 200A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 0.24Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes Case: SP6C |
товар відсутній |