Технічний опис APTM120H140FT1G Microchip Technology
Description: MOSFET 4N-CH 1200V 8A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 208W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V, Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SP1.
Інші пропозиції APTM120H140FT1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTM120H140FT1G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 50A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 6A On-state resistance: 1.68Ω Power dissipation: 208W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP1 кількість в упаковці: 1 шт |
товар відсутній |
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APTM120H140FT1G | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP1 |
товар відсутній |
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APTM120H140FT1G | Виробник : Microchip Technology |
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товар відсутній |
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APTM120H140FT1G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 50A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 6A On-state resistance: 1.68Ω Power dissipation: 208W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Case: SP1 |
товар відсутній |