Технічний опис APTM120DA30T1G Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V, Power Dissipation (Max): 657W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V.
Інші пропозиції APTM120DA30T1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTM120DA30T1G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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APTM120DA30T1G | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V Power Dissipation (Max): 657W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V |
товар відсутній |
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APTM120DA30T1G | Виробник : Microchip Technology |
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товар відсутній |
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APTM120DA30T1G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8® Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |