Технічний опис APTM10HM09FT3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB, Technology: FREDFET; POWER MOS 5®, Drain-source voltage: 100V, Drain current: 100A, Pulsed drain current: 430A, Power dissipation: 390W, Case: SP3F, Gate-source voltage: ±30V, On-state resistance: 10mΩ, Semiconductor structure: transistor/transistor, Electrical mounting: Press-in PCB, Topology: H-bridge; NTC thermistor, Mechanical mounting: screw, Type of module: MOSFET transistor, кількість в упаковці: 1 шт.
Інші пропозиції APTM10HM09FT3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTM10HM09FT3G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Technology: FREDFET; POWER MOS 5® Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 430A Power dissipation: 390W Case: SP3F Gate-source voltage: ±30V On-state resistance: 10mΩ Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Topology: H-bridge; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APTM10HM09FT3G | Виробник : Microchip Technology |
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APTM10HM09FT3G | Виробник : Microchip / Microsemi |
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APTM10HM09FT3G | Виробник : Microchip Technology |
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товар відсутній |
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APTM10HM09FT3G | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Technology: FREDFET; POWER MOS 5® Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 430A Power dissipation: 390W Case: SP3F Gate-source voltage: ±30V On-state resistance: 10mΩ Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Topology: H-bridge; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |