Технічний опис APTM120U10SCAVG Microchip Technology
Description: MOSFET N-CH 1200V 116A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V, Power Dissipation (Max): 3290W (Tc), Vgs(th) (Max) @ Id: 5V @ 20mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V.
Інші пропозиції APTM120U10SCAVG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
APTM120U10SCAVG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A Mechanical mounting: screw Pulsed drain current: 464A Type of module: MOSFET transistor Topology: single transistor + series diode - parrallel diode Power dissipation: 3.29kW Gate-source voltage: ±30V On-state resistance: 0.12Ω Drain current: 86A Drain-source voltage: 1.2kV Semiconductor structure: SiC diode/transistor Technology: POWER MOS 7®; SiC Electrical mounting: screw Case: SP6 кількість в упаковці: 1 шт |
товар відсутній |
||
![]() |
APTM120U10SCAVG | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V Power Dissipation (Max): 3290W (Tc) Vgs(th) (Max) @ Id: 5V @ 20mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V |
товар відсутній |
|
APTM120U10SCAVG | Виробник : Microchip Technology |
![]() |
товар відсутній |
||
APTM120U10SCAVG | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A Mechanical mounting: screw Pulsed drain current: 464A Type of module: MOSFET transistor Topology: single transistor + series diode - parrallel diode Power dissipation: 3.29kW Gate-source voltage: ±30V On-state resistance: 0.12Ω Drain current: 86A Drain-source voltage: 1.2kV Semiconductor structure: SiC diode/transistor Technology: POWER MOS 7®; SiC Electrical mounting: screw Case: SP6 |
товар відсутній |