Технічний опис APTM20AM06SG Microchip Technology
Description: MOSFET 2N-CH 200V 300A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1250W, Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 300A, Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V, Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V, Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 6mA, Supplier Device Package: SP6, Part Status: Active.
Інші пропозиції APTM20AM06SG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM20AM06SG | Виробник : MICROCHIP (MICROSEMI) |
 APTM20AM06SG Transistor modules MOSFET |
товар відсутній |
||
| APTM20AM06SG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 200V 300A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300A Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP6 Part Status: Active |
товар відсутній |
||
| APTM20AM06SG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
товар відсутній |