Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 58 з 69
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM50HM75FT3G | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 500V; 34A; SP3; Press-in PCB; 357W Pulsed drain current: 184A Power dissipation: 357W Technology: FREDFET; POWER MOS 7® Drain current: 34A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: Press-in PCB Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 90mΩ Topology: H-bridge; NTC thermistor кількість в упаковці: 1 шт |
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| APTM50HM75FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 34A; SP4; Idm: 184A; 357W Pulsed drain current: 184A Power dissipation: 357W Technology: FREDFET; POWER MOS 7® Drain current: 34A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP4 On-state resistance: 90mΩ Topology: H-bridge; NTC thermistor |
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| APTM50HM75FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 34A; SP4; Idm: 184A; 357W Pulsed drain current: 184A Power dissipation: 357W Technology: FREDFET; POWER MOS 7® Drain current: 34A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP4 On-state resistance: 90mΩ Topology: H-bridge; NTC thermistor кількість в упаковці: 1 шт |
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| APTM50HM75SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw Pulsed drain current: 184A Power dissipation: 357W Technology: POWER MOS 7®; SiC Drain current: 34A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP4 On-state resistance: 90mΩ Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor |
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| APTM50HM75SCTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw Pulsed drain current: 184A Power dissipation: 357W Technology: POWER MOS 7®; SiC Drain current: 34A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP4 On-state resistance: 90mΩ Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor кількість в упаковці: 1 шт |
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| APTM50HM75STG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 34A; SP4; FASTON connectors,screw Pulsed drain current: 184A Power dissipation: 357W Technology: POWER MOS 7® Drain current: 34A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 90mΩ Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor |
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| APTM50HM75STG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 34A; SP4; FASTON connectors,screw Pulsed drain current: 184A Power dissipation: 357W Technology: POWER MOS 7® Drain current: 34A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 90mΩ Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor кількість в упаковці: 1 шт |
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| APTM50SKM17G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 135A; SP6C; Topology: buck chopper Pulsed drain current: 720A Power dissipation: 1.25kW Technology: POWER MOS 7® Drain current: 135A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 20mΩ Topology: buck chopper |
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| APTM50SKM17G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 135A; SP6C; Topology: buck chopper Pulsed drain current: 720A Power dissipation: 1.25kW Technology: POWER MOS 7® Drain current: 135A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 20mΩ Topology: buck chopper кількість в упаковці: 1 шт |
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| APTM50SKM19G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper Case: SP6C Electrical mounting: FASTON connectors; screw Power dissipation: 1136W Technology: POWER MOS 7® Mechanical mounting: screw Pulsed drain current: 652A Drain current: 122A Gate-source voltage: ±30V Drain-source voltage: 500V On-state resistance: 22.5mΩ |
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| APTM50SKM19G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper Case: SP6C Electrical mounting: FASTON connectors; screw Power dissipation: 1136W Technology: POWER MOS 7® Mechanical mounting: screw Pulsed drain current: 652A Drain current: 122A Gate-source voltage: ±30V Drain-source voltage: 500V On-state resistance: 22.5mΩ кількість в упаковці: 1 шт |
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| APTM50TAM65FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 38A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 38A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 78mΩ Pulsed drain current: 204A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM50TAM65FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 38A; SP6P; Press-in PCB; 390W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 38A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 78mΩ Pulsed drain current: 204A Power dissipation: 390W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM50UM09FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 371A; SP6C; Idm: 1988A; 5kW; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 371A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 1988A Power dissipation: 5kW Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM50UM09FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 371A; SP6C; Idm: 1988A; 5kW; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 371A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 1988A Power dissipation: 5kW Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM50UM13SAG | MICROCHIP (MICROSEMI) |
APTM50UM13SAG Transistor modules MOSFET |
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| APTM60A11FT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 30A; SP1; Ugs: ±30V; Idm: 245A Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP1 On-state resistance: 110mΩ Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 245A Power dissipation: 390W Technology: FREDFET; POWER MOS 8® Drain current: 30A Drain-source voltage: 600V |
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| APTM60A11FT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 30A; SP1; Ugs: ±30V; Idm: 245A Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP1 On-state resistance: 110mΩ Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 245A Power dissipation: 390W Technology: FREDFET; POWER MOS 8® Drain current: 30A Drain-source voltage: 600V кількість в упаковці: 1 шт |
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| APTM60H23FT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 15A; SP1; Ugs: ±30V; Idm: 125A Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP1 On-state resistance: 230mΩ Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 125A Power dissipation: 208W Technology: FREDFET; POWER MOS 8® Drain current: 15A Drain-source voltage: 600V |
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| APTM60H23FT1G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 15A; SP1; Ugs: ±30V; Idm: 125A Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP1 On-state resistance: 230mΩ Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 125A Power dissipation: 208W Technology: FREDFET; POWER MOS 8® Drain current: 15A Drain-source voltage: 600V кількість в упаковці: 1 шт |
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| APTMC120AM08CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 190A; D3; Idm: 550A; 1.1kW; SiC Power dissipation: 1.1kW Case: D3 Semiconductor structure: SiC diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Pulsed drain current: 550A Drain-source voltage: 1.2kV Drain current: 190A On-state resistance: 10mΩ |
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| APTMC120AM08CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 190A; D3; Idm: 550A; 1.1kW; SiC Power dissipation: 1.1kW Case: D3 Semiconductor structure: SiC diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Pulsed drain current: 550A Drain-source voltage: 1.2kV Drain current: 190A On-state resistance: 10mΩ кількість в упаковці: 1 шт |
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| APTMC120AM09CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 220A; SP3F; Press-in PCB Power dissipation: 1.25kW Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 590A Drain-source voltage: 1.2kV Drain current: 220A On-state resistance: 9mΩ |
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| APTMC120AM09CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 220A; SP3F; Press-in PCB Power dissipation: 1.25kW Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 590A Drain-source voltage: 1.2kV Drain current: 220A On-state resistance: 9mΩ кількість в упаковці: 1 шт |
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| APTMC120AM12CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB Power dissipation: 925W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 440A Drain-source voltage: 1.2kV Drain current: 165A On-state resistance: 12mΩ |
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| APTMC120AM12CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB Power dissipation: 925W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 440A Drain-source voltage: 1.2kV Drain current: 165A On-state resistance: 12mΩ кількість в упаковці: 1 шт |
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| APTMC120AM16CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 98A; D3; Idm: 262A; 625W; SiC Power dissipation: 625W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Pulsed drain current: 262A Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 98A On-state resistance: 20mΩ |
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| APTMC120AM16CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 98A; D3; Idm: 262A; 625W; SiC Power dissipation: 625W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Pulsed drain current: 262A Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 98A On-state resistance: 20mΩ кількість в упаковці: 1 шт |
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| APTMC120AM20CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 108A; SP1; Press-in PCB; 600W Power dissipation: 600W Case: SP1 Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 280A Drain-source voltage: 1.2kV Drain current: 108A On-state resistance: 17mΩ |
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| APTMC120AM20CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 108A; SP1; Press-in PCB; 600W Power dissipation: 600W Case: SP1 Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 280A Drain-source voltage: 1.2kV Drain current: 108A On-state resistance: 17mΩ кількість в упаковці: 1 шт |
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| APTMC120AM25CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 90A; SP3F; Press-in PCB; 600W Technology: SiC Semiconductor structure: SiC diode/transistor Case: SP3F Power dissipation: 600W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 220A Drain-source voltage: 1.2kV Drain current: 90A On-state resistance: 25mΩ |
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| APTMC120AM25CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 90A; SP3F; Press-in PCB; 600W Technology: SiC Semiconductor structure: SiC diode/transistor Case: SP3F Power dissipation: 600W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 220A Drain-source voltage: 1.2kV Drain current: 90A On-state resistance: 25mΩ кількість в упаковці: 1 шт |
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| APTMC120AM55CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W Power dissipation: 250W Case: SP1 Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 110A Drain-source voltage: 1.2kV Drain current: 42A On-state resistance: 49mΩ |
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| APTMC120AM55CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W Power dissipation: 250W Case: SP1 Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 110A Drain-source voltage: 1.2kV Drain current: 42A On-state resistance: 49mΩ кількість в упаковці: 1 шт |
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| APTMC120HM17CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB Power dissipation: 750W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: H-bridge; NTC thermistor Pulsed drain current: 300A Drain-source voltage: 1.2kV Drain current: 116A On-state resistance: 17mΩ |
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| APTMC120HM17CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB Power dissipation: 750W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: H-bridge; NTC thermistor Pulsed drain current: 300A Drain-source voltage: 1.2kV Drain current: 116A On-state resistance: 17mΩ кількість в упаковці: 1 шт |
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| APTMC120HR11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F Power dissipation: 125W Case: SP3F Semiconductor structure: common emitter; SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Pulsed drain current: 55A Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 98mΩ |
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| APTMC120HR11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F Power dissipation: 125W Case: SP3F Semiconductor structure: common emitter; SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Pulsed drain current: 55A Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 98mΩ кількість в упаковці: 1 шт |
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| APTMC120HRM40CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F Power dissipation: 375W Case: SP3F Semiconductor structure: common emitter; SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Pulsed drain current: 140A Drain-source voltage: 1.2kV Drain current: 55A On-state resistance: 34mΩ |
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| APTMC120HRM40CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F Power dissipation: 375W Case: SP3F Semiconductor structure: common emitter; SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Pulsed drain current: 140A Drain-source voltage: 1.2kV Drain current: 55A On-state resistance: 34mΩ кількість в упаковці: 1 шт |
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| APTMC120TAM12CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB Power dissipation: 925W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 440A Drain-source voltage: 1.2kV Drain current: 165A On-state resistance: 12mΩ |
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| APTMC120TAM12CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB Power dissipation: 925W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 440A Drain-source voltage: 1.2kV Drain current: 165A On-state resistance: 12mΩ кількість в упаковці: 1 шт |
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| APTMC120TAM17CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB Power dissipation: 625W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 300A Drain-source voltage: 1.2kV Drain current: 110A On-state resistance: 17mΩ |
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| APTMC120TAM17CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB Power dissipation: 625W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 300A Drain-source voltage: 1.2kV Drain current: 110A On-state resistance: 17mΩ кількість в упаковці: 1 шт |
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| APTMC120TAM33CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W Power dissipation: 370W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 155A Drain-source voltage: 1.2kV Drain current: 58A On-state resistance: 33mΩ |
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| APTMC120TAM33CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W Power dissipation: 370W Case: SP6P Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 155A Drain-source voltage: 1.2kV Drain current: 58A On-state resistance: 33mΩ кількість в упаковці: 1 шт |
товар відсутній |
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| APTMC120TAM34CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W Power dissipation: 375W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 150A Drain-source voltage: 1.2kV Drain current: 58A On-state resistance: 34mΩ |
товар відсутній |
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| APTMC120TAM34CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W Power dissipation: 375W Case: SP3F Semiconductor structure: SiC diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 150A Drain-source voltage: 1.2kV Drain current: 58A On-state resistance: 34mΩ кількість в упаковці: 1 шт |
товар відсутній |
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| APTMC170AM30CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W Pulsed drain current: 200A Power dissipation: 700W Technology: SiC Drain current: 74A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 35mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor |
товар відсутній |
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| APTMC170AM30CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W Pulsed drain current: 200A Power dissipation: 700W Technology: SiC Drain current: 74A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 35mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor кількість в упаковці: 1 шт |
товар відсутній |
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| APTMC170AM60CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W Pulsed drain current: 100A Power dissipation: 350W Technology: SiC Drain current: 37A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 70mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor |
товар відсутній |
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| APTMC170AM60CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W Pulsed drain current: 100A Power dissipation: 350W Technology: SiC Drain current: 37A Drain-source voltage: 1.7kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor Case: SP1 On-state resistance: 70mΩ Topology: MOSFET half-bridge + serial diodes; NTC thermistor кількість в упаковці: 1 шт |
товар відсутній |
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| APTMC60TL11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W Power dissipation: 125W Semiconductor structure: SiC diode/transistor Case: SP3F Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor On-state resistance: 98mΩ Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 55A Drain current: 22A |
товар відсутній |
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| APTMC60TL11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W Power dissipation: 125W Semiconductor structure: SiC diode/transistor Case: SP3F Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor On-state resistance: 98mΩ Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 55A Drain current: 22A кількість в упаковці: 1 шт |
товар відсутній |
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| APTMC60TLM14CAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W Power dissipation: 925W Semiconductor structure: SiC diode/transistor Case: SP6C Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor On-state resistance: 12mΩ Topology: three-level inverter; single-phase Pulsed drain current: 440A Drain current: 164A |
товар відсутній |
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| APTMC60TLM14CAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W Power dissipation: 925W Semiconductor structure: SiC diode/transistor Case: SP6C Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor On-state resistance: 12mΩ Topology: three-level inverter; single-phase Pulsed drain current: 440A Drain current: 164A кількість в упаковці: 1 шт |
товар відсутній |
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| APTMC60TLM55CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W Power dissipation: 263W Semiconductor structure: SiC diode/transistor Case: SP3F Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor On-state resistance: 52mΩ Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 100A Drain current: 38A |
товар відсутній |
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| APTMC60TLM55CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W Power dissipation: 263W Semiconductor structure: SiC diode/transistor Case: SP3F Technology: SiC Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET transistor On-state resistance: 52mΩ Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 100A Drain current: 38A кількість в упаковці: 1 шт |
товар відсутній |
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| ARF475FL | MICROCHIP (MICROSEMI) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB Type of transistor: N-MOSFET x2 Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 500V Drain current: 10A Power dissipation: 910W Case: T3A-8 Gate-source voltage: ±30V Kind of package: tube Frequency: 128MHz Kind of channel: depleted Semiconductor structure: common source Features of semiconductor devices: dual gate Output power: 900W Electrical mounting: FASTON connectors; soldering; THT Open-loop gain: 16dB Efficiency: 55% Mechanical mounting: screw |
товар відсутній |
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| ARF475FL | MICROCHIP (MICROSEMI) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB Type of transistor: N-MOSFET x2 Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 500V Drain current: 10A Power dissipation: 910W Case: T3A-8 Gate-source voltage: ±30V Kind of package: tube Frequency: 128MHz Kind of channel: depleted Semiconductor structure: common source Features of semiconductor devices: dual gate Output power: 900W Electrical mounting: FASTON connectors; soldering; THT Open-loop gain: 16dB Efficiency: 55% Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
| APTM50HM75FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 34A; SP3; Press-in PCB; 357W
Pulsed drain current: 184A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 90mΩ
Topology: H-bridge; NTC thermistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 34A; SP3; Press-in PCB; 357W
Pulsed drain current: 184A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 90mΩ
Topology: H-bridge; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
| APTM50HM75FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 34A; SP4; Idm: 184A; 357W
Pulsed drain current: 184A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H-bridge; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 34A; SP4; Idm: 184A; 357W
Pulsed drain current: 184A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H-bridge; NTC thermistor
товар відсутній
| APTM50HM75FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 34A; SP4; Idm: 184A; 357W
Pulsed drain current: 184A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H-bridge; NTC thermistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 34A; SP4; Idm: 184A; 357W
Pulsed drain current: 184A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H-bridge; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
| APTM50HM75SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw
Pulsed drain current: 184A
Power dissipation: 357W
Technology: POWER MOS 7®; SiC
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw
Pulsed drain current: 184A
Power dissipation: 357W
Technology: POWER MOS 7®; SiC
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
товар відсутній
| APTM50HM75SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw
Pulsed drain current: 184A
Power dissipation: 357W
Technology: POWER MOS 7®; SiC
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw
Pulsed drain current: 184A
Power dissipation: 357W
Technology: POWER MOS 7®; SiC
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
| APTM50HM75STG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 34A; SP4; FASTON connectors,screw
Pulsed drain current: 184A
Power dissipation: 357W
Technology: POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 34A; SP4; FASTON connectors,screw
Pulsed drain current: 184A
Power dissipation: 357W
Technology: POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
товар відсутній
| APTM50HM75STG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 34A; SP4; FASTON connectors,screw
Pulsed drain current: 184A
Power dissipation: 357W
Technology: POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 34A; SP4; FASTON connectors,screw
Pulsed drain current: 184A
Power dissipation: 357W
Technology: POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 90mΩ
Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
| APTM50SKM17G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Topology: buck chopper
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: buck chopper
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Topology: buck chopper
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: buck chopper
товар відсутній
| APTM50SKM17G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Topology: buck chopper
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: buck chopper
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Topology: buck chopper
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: buck chopper
кількість в упаковці: 1 шт
товар відсутній
| APTM50SKM19G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: SP6C
Electrical mounting: FASTON connectors; screw
Power dissipation: 1136W
Technology: POWER MOS 7®
Mechanical mounting: screw
Pulsed drain current: 652A
Drain current: 122A
Gate-source voltage: ±30V
Drain-source voltage: 500V
On-state resistance: 22.5mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: SP6C
Electrical mounting: FASTON connectors; screw
Power dissipation: 1136W
Technology: POWER MOS 7®
Mechanical mounting: screw
Pulsed drain current: 652A
Drain current: 122A
Gate-source voltage: ±30V
Drain-source voltage: 500V
On-state resistance: 22.5mΩ
товар відсутній
| APTM50SKM19G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: SP6C
Electrical mounting: FASTON connectors; screw
Power dissipation: 1136W
Technology: POWER MOS 7®
Mechanical mounting: screw
Pulsed drain current: 652A
Drain current: 122A
Gate-source voltage: ±30V
Drain-source voltage: 500V
On-state resistance: 22.5mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 122A; SP6C; Topology: buck chopper
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: SP6C
Electrical mounting: FASTON connectors; screw
Power dissipation: 1136W
Technology: POWER MOS 7®
Mechanical mounting: screw
Pulsed drain current: 652A
Drain current: 122A
Gate-source voltage: ±30V
Drain-source voltage: 500V
On-state resistance: 22.5mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTM50TAM65FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 38A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 38A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 78mΩ
Pulsed drain current: 204A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 38A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 38A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 78mΩ
Pulsed drain current: 204A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM50TAM65FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 38A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 38A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 78mΩ
Pulsed drain current: 204A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 38A; SP6P; Press-in PCB; 390W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 38A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 78mΩ
Pulsed drain current: 204A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM50UM09FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 371A; SP6C; Idm: 1988A; 5kW; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 371A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 1988A
Power dissipation: 5kW
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 371A; SP6C; Idm: 1988A; 5kW; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 371A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 1988A
Power dissipation: 5kW
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM50UM09FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 371A; SP6C; Idm: 1988A; 5kW; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 371A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 1988A
Power dissipation: 5kW
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 371A; SP6C; Idm: 1988A; 5kW; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 371A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 1988A
Power dissipation: 5kW
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM50UM13SAG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM50UM13SAG Transistor modules MOSFET
APTM50UM13SAG Transistor modules MOSFET
товар відсутній
| APTM60A11FT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 30A; SP1; Ugs: ±30V; Idm: 245A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP1
On-state resistance: 110mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 245A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 8®
Drain current: 30A
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 30A; SP1; Ugs: ±30V; Idm: 245A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP1
On-state resistance: 110mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 245A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 8®
Drain current: 30A
Drain-source voltage: 600V
товар відсутній
| APTM60A11FT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 30A; SP1; Ugs: ±30V; Idm: 245A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP1
On-state resistance: 110mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 245A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 8®
Drain current: 30A
Drain-source voltage: 600V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 30A; SP1; Ugs: ±30V; Idm: 245A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP1
On-state resistance: 110mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 245A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 8®
Drain current: 30A
Drain-source voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APTM60H23FT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 15A; SP1; Ugs: ±30V; Idm: 125A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP1
On-state resistance: 230mΩ
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 125A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 8®
Drain current: 15A
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 15A; SP1; Ugs: ±30V; Idm: 125A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP1
On-state resistance: 230mΩ
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 125A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 8®
Drain current: 15A
Drain-source voltage: 600V
товар відсутній
| APTM60H23FT1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 15A; SP1; Ugs: ±30V; Idm: 125A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP1
On-state resistance: 230mΩ
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 125A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 8®
Drain current: 15A
Drain-source voltage: 600V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 15A; SP1; Ugs: ±30V; Idm: 125A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP1
On-state resistance: 230mΩ
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 125A
Power dissipation: 208W
Technology: FREDFET; POWER MOS 8®
Drain current: 15A
Drain-source voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
| APTMC120AM08CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 190A; D3; Idm: 550A; 1.1kW; SiC
Power dissipation: 1.1kW
Case: D3
Semiconductor structure: SiC diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Pulsed drain current: 550A
Drain-source voltage: 1.2kV
Drain current: 190A
On-state resistance: 10mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 190A; D3; Idm: 550A; 1.1kW; SiC
Power dissipation: 1.1kW
Case: D3
Semiconductor structure: SiC diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Pulsed drain current: 550A
Drain-source voltage: 1.2kV
Drain current: 190A
On-state resistance: 10mΩ
товар відсутній
| APTMC120AM08CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 190A; D3; Idm: 550A; 1.1kW; SiC
Power dissipation: 1.1kW
Case: D3
Semiconductor structure: SiC diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Pulsed drain current: 550A
Drain-source voltage: 1.2kV
Drain current: 190A
On-state resistance: 10mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 190A; D3; Idm: 550A; 1.1kW; SiC
Power dissipation: 1.1kW
Case: D3
Semiconductor structure: SiC diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Pulsed drain current: 550A
Drain-source voltage: 1.2kV
Drain current: 190A
On-state resistance: 10mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120AM09CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 220A; SP3F; Press-in PCB
Power dissipation: 1.25kW
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 590A
Drain-source voltage: 1.2kV
Drain current: 220A
On-state resistance: 9mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 220A; SP3F; Press-in PCB
Power dissipation: 1.25kW
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 590A
Drain-source voltage: 1.2kV
Drain current: 220A
On-state resistance: 9mΩ
товар відсутній
| APTMC120AM09CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 220A; SP3F; Press-in PCB
Power dissipation: 1.25kW
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 590A
Drain-source voltage: 1.2kV
Drain current: 220A
On-state resistance: 9mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 220A; SP3F; Press-in PCB
Power dissipation: 1.25kW
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 590A
Drain-source voltage: 1.2kV
Drain current: 220A
On-state resistance: 9mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120AM12CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB
Power dissipation: 925W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB
Power dissipation: 925W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
товар відсутній
| APTMC120AM12CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB
Power dissipation: 925W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB
Power dissipation: 925W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120AM16CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 98A; D3; Idm: 262A; 625W; SiC
Power dissipation: 625W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Pulsed drain current: 262A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 98A
On-state resistance: 20mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 98A; D3; Idm: 262A; 625W; SiC
Power dissipation: 625W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Pulsed drain current: 262A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 98A
On-state resistance: 20mΩ
товар відсутній
| APTMC120AM16CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 98A; D3; Idm: 262A; 625W; SiC
Power dissipation: 625W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Pulsed drain current: 262A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 98A
On-state resistance: 20mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 98A; D3; Idm: 262A; 625W; SiC
Power dissipation: 625W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Pulsed drain current: 262A
Case: D3
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 98A
On-state resistance: 20mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120AM20CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 108A; SP1; Press-in PCB; 600W
Power dissipation: 600W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 280A
Drain-source voltage: 1.2kV
Drain current: 108A
On-state resistance: 17mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 108A; SP1; Press-in PCB; 600W
Power dissipation: 600W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 280A
Drain-source voltage: 1.2kV
Drain current: 108A
On-state resistance: 17mΩ
товар відсутній
| APTMC120AM20CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 108A; SP1; Press-in PCB; 600W
Power dissipation: 600W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 280A
Drain-source voltage: 1.2kV
Drain current: 108A
On-state resistance: 17mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 108A; SP1; Press-in PCB; 600W
Power dissipation: 600W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 280A
Drain-source voltage: 1.2kV
Drain current: 108A
On-state resistance: 17mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120AM25CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 90A; SP3F; Press-in PCB; 600W
Technology: SiC
Semiconductor structure: SiC diode/transistor
Case: SP3F
Power dissipation: 600W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 220A
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 25mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 90A; SP3F; Press-in PCB; 600W
Technology: SiC
Semiconductor structure: SiC diode/transistor
Case: SP3F
Power dissipation: 600W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 220A
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 25mΩ
товар відсутній
| APTMC120AM25CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 90A; SP3F; Press-in PCB; 600W
Technology: SiC
Semiconductor structure: SiC diode/transistor
Case: SP3F
Power dissipation: 600W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 220A
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 25mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 90A; SP3F; Press-in PCB; 600W
Technology: SiC
Semiconductor structure: SiC diode/transistor
Case: SP3F
Power dissipation: 600W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 220A
Drain-source voltage: 1.2kV
Drain current: 90A
On-state resistance: 25mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120AM55CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W
Power dissipation: 250W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 110A
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 49mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W
Power dissipation: 250W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 110A
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 49mΩ
товар відсутній
| APTMC120AM55CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W
Power dissipation: 250W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 110A
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 49mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 42A; SP1; Press-in PCB; 250W
Power dissipation: 250W
Case: SP1
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 110A
Drain-source voltage: 1.2kV
Drain current: 42A
On-state resistance: 49mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120HM17CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
товар відсутній
| APTMC120HM17CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 116A; SP3F; Press-in PCB
Power dissipation: 750W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 116A
On-state resistance: 17mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120HR11CT3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
товар відсутній
| APTMC120HR11CT3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120HRM40CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Power dissipation: 375W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 34mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Power dissipation: 375W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 34mΩ
товар відсутній
| APTMC120HRM40CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Power dissipation: 375W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 34mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 55A; SP3F
Power dissipation: 375W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 140A
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 34mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120TAM12CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB
Power dissipation: 925W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB
Power dissipation: 925W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
товар відсутній
| APTMC120TAM12CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB
Power dissipation: 925W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 165A; SP6P; Press-in PCB
Power dissipation: 925W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 440A
Drain-source voltage: 1.2kV
Drain current: 165A
On-state resistance: 12mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120TAM17CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB
Power dissipation: 625W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 110A
On-state resistance: 17mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB
Power dissipation: 625W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 110A
On-state resistance: 17mΩ
товар відсутній
| APTMC120TAM17CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB
Power dissipation: 625W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 110A
On-state resistance: 17mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 110A; SP6P; Press-in PCB
Power dissipation: 625W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 300A
Drain-source voltage: 1.2kV
Drain current: 110A
On-state resistance: 17mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120TAM33CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W
Power dissipation: 370W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 155A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 33mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W
Power dissipation: 370W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 155A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 33mΩ
товар відсутній
| APTMC120TAM33CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W
Power dissipation: 370W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 155A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 33mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP6P; Press-in PCB; 370W
Power dissipation: 370W
Case: SP6P
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 155A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 33mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC120TAM34CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W
Power dissipation: 375W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 150A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 34mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W
Power dissipation: 375W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 150A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 34mΩ
товар відсутній
| APTMC120TAM34CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W
Power dissipation: 375W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 150A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 34mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 58A; SP3F; Press-in PCB; 375W
Power dissipation: 375W
Case: SP3F
Semiconductor structure: SiC diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 150A
Drain-source voltage: 1.2kV
Drain current: 58A
On-state resistance: 34mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTMC170AM30CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W
Pulsed drain current: 200A
Power dissipation: 700W
Technology: SiC
Drain current: 74A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 35mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W
Pulsed drain current: 200A
Power dissipation: 700W
Technology: SiC
Drain current: 74A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 35mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
товар відсутній
| APTMC170AM30CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W
Pulsed drain current: 200A
Power dissipation: 700W
Technology: SiC
Drain current: 74A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 35mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 74A; SP1; Press-in PCB; 700W
Pulsed drain current: 200A
Power dissipation: 700W
Technology: SiC
Drain current: 74A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 35mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
| APTMC170AM60CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W
Pulsed drain current: 100A
Power dissipation: 350W
Technology: SiC
Drain current: 37A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 70mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W
Pulsed drain current: 100A
Power dissipation: 350W
Technology: SiC
Drain current: 37A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 70mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
товар відсутній
| APTMC170AM60CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W
Pulsed drain current: 100A
Power dissipation: 350W
Technology: SiC
Drain current: 37A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 70mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.7kV; 37A; SP1; Press-in PCB; 350W
Pulsed drain current: 100A
Power dissipation: 350W
Technology: SiC
Drain current: 37A
Drain-source voltage: 1.7kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Case: SP1
On-state resistance: 70mΩ
Topology: MOSFET half-bridge + serial diodes; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
| APTMC60TL11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W
Power dissipation: 125W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 98mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 55A
Drain current: 22A
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W
Power dissipation: 125W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 98mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 55A
Drain current: 22A
товар відсутній
| APTMC60TL11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W
Power dissipation: 125W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 98mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 55A
Drain current: 22A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 22A; SP3F; Press-in PCB; 125W
Power dissipation: 125W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 98mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 55A
Drain current: 22A
кількість в упаковці: 1 шт
товар відсутній
| APTMC60TLM14CAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W
Power dissipation: 925W
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
On-state resistance: 12mΩ
Topology: three-level inverter; single-phase
Pulsed drain current: 440A
Drain current: 164A
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W
Power dissipation: 925W
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
On-state resistance: 12mΩ
Topology: three-level inverter; single-phase
Pulsed drain current: 440A
Drain current: 164A
товар відсутній
| APTMC60TLM14CAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W
Power dissipation: 925W
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
On-state resistance: 12mΩ
Topology: three-level inverter; single-phase
Pulsed drain current: 440A
Drain current: 164A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 164A; SP6C; Idm: 440A; 925W
Power dissipation: 925W
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
On-state resistance: 12mΩ
Topology: three-level inverter; single-phase
Pulsed drain current: 440A
Drain current: 164A
кількість в упаковці: 1 шт
товар відсутній
| APTMC60TLM55CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W
Power dissipation: 263W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 52mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 100A
Drain current: 38A
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W
Power dissipation: 263W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 52mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 100A
Drain current: 38A
товар відсутній
| APTMC60TLM55CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W
Power dissipation: 263W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 52mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 100A
Drain current: 38A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 38A; SP3F; Press-in PCB; 263W
Power dissipation: 263W
Semiconductor structure: SiC diode/transistor
Case: SP3F
Technology: SiC
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET transistor
On-state resistance: 52mΩ
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 100A
Drain current: 38A
кількість в упаковці: 1 шт
товар відсутній
| ARF475FL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 910W
Case: T3A-8
Gate-source voltage: ±30V
Kind of package: tube
Frequency: 128MHz
Kind of channel: depleted
Semiconductor structure: common source
Features of semiconductor devices: dual gate
Output power: 900W
Electrical mounting: FASTON connectors; soldering; THT
Open-loop gain: 16dB
Efficiency: 55%
Mechanical mounting: screw
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 910W
Case: T3A-8
Gate-source voltage: ±30V
Kind of package: tube
Frequency: 128MHz
Kind of channel: depleted
Semiconductor structure: common source
Features of semiconductor devices: dual gate
Output power: 900W
Electrical mounting: FASTON connectors; soldering; THT
Open-loop gain: 16dB
Efficiency: 55%
Mechanical mounting: screw
товар відсутній
| ARF475FL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 910W
Case: T3A-8
Gate-source voltage: ±30V
Kind of package: tube
Frequency: 128MHz
Kind of channel: depleted
Semiconductor structure: common source
Features of semiconductor devices: dual gate
Output power: 900W
Electrical mounting: FASTON connectors; soldering; THT
Open-loop gain: 16dB
Efficiency: 55%
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; T3A-8; 16dB
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 910W
Case: T3A-8
Gate-source voltage: ±30V
Kind of package: tube
Frequency: 128MHz
Kind of channel: depleted
Semiconductor structure: common source
Features of semiconductor devices: dual gate
Output power: 900W
Electrical mounting: FASTON connectors; soldering; THT
Open-loop gain: 16dB
Efficiency: 55%
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній