Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 60 з 69
Фото | Назва | Виробник | Інформація |
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MSC010SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2 Technology: SiC Power dissipation: 59W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Heatsink thickness: 1.14...1.4mm Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 75A Load current: 10A Max. forward voltage: 2.1V |
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MSC010SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2 Technology: SiC Power dissipation: 59W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Heatsink thickness: 1.14...1.4mm Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 75A Load current: 10A Max. forward voltage: 2.1V кількість в упаковці: 1 шт |
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MSC010SDA170B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2 Technology: SiC Power dissipation: 71W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.7kV Type of diode: Schottky rectifying Leakage current: 10µA Max. forward impulse current: 90A Load current: 10A Max. forward voltage: 2.1V |
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MSC010SDA170B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2 Technology: SiC Power dissipation: 71W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.7kV Type of diode: Schottky rectifying Leakage current: 10µA Max. forward impulse current: 90A Load current: 10A Max. forward voltage: 2.1V кількість в упаковці: 1 шт |
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MSC015SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2 Technology: SiC Power dissipation: 72W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 10µA Max. forward impulse current: 109A Load current: 15A Max. forward voltage: 2V |
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MSC015SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2 Technology: SiC Power dissipation: 72W Case: TO247-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 10µA Max. forward impulse current: 109A Load current: 15A Max. forward voltage: 2V кількість в упаковці: 1 шт |
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MSC015SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2 Technology: SiC Power dissipation: 65W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 109A Load current: 15A Max. forward voltage: 2V |
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MSC015SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2 Technology: SiC Power dissipation: 65W Case: TO220-2 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Leakage current: 50µA Max. forward impulse current: 109A Load current: 15A Max. forward voltage: 2V кількість в упаковці: 1 шт |
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MSC015SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 99A Pulsed drain current: 350A Power dissipation: 400W Case: TO247-3 On-state resistance: 19mΩ Mounting: THT Gate charge: 215nC Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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MSC015SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 99A Pulsed drain current: 350A Power dissipation: 400W Case: TO247-3 On-state resistance: 19mΩ Mounting: THT Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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MSC015SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 99A Pulsed drain current: 350A Power dissipation: 455W Case: TO247-4 On-state resistance: 19mΩ Mounting: THT Gate charge: 215nC Kind of channel: enhanced |
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MSC015SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 99A Pulsed drain current: 350A Power dissipation: 455W Case: TO247-4 On-state resistance: 19mΩ Mounting: THT Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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MSC015SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 89A Pulsed drain current: 315A Power dissipation: 370W Case: D3PAK On-state resistance: 19mΩ Mounting: SMD Gate charge: 215nC Kind of channel: enhanced |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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MSC015SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 89A Pulsed drain current: 315A Power dissipation: 370W Case: D3PAK On-state resistance: 19mΩ Mounting: SMD Gate charge: 215nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 14 шт: термін постачання 14-21 дні (днів) |
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MSC017SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 80A Pulsed drain current: 280A Power dissipation: 455W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 249nC Kind of channel: enhanced |
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MSC017SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 80A Pulsed drain current: 280A Power dissipation: 455W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 249nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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MSC017SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 80A Pulsed drain current: 280A Power dissipation: 455W Case: TO247-4 On-state resistance: 22mΩ Mounting: THT Gate charge: 249nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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MSC017SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 80A Pulsed drain current: 280A Power dissipation: 455W Case: TO247-4 On-state resistance: 22mΩ Mounting: THT Gate charge: 249nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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MSC020SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 80W Semiconductor structure: single diode Case: TO247AC Modified Max. forward impulse current: 115A Max. forward voltage: 2.1V Leakage current: 0.1mA |
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MSC020SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 80W Semiconductor structure: single diode Case: TO247AC Modified Max. forward impulse current: 115A Max. forward voltage: 2.1V Leakage current: 0.1mA кількість в упаковці: 1 шт |
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MSC020SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 80W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 115A Max. forward voltage: 2.1V Leakage current: 0.1mA |
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MSC020SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 80W Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 115A Max. forward voltage: 2.1V Leakage current: 0.1mA кількість в упаковці: 1 шт |
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MSC025SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 275A Power dissipation: 500W Case: TO247-3 On-state resistance: 31mΩ Mounting: THT Gate charge: 232nC Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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MSC025SMA120B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 275A Power dissipation: 500W Case: TO247-3 On-state resistance: 31mΩ Mounting: THT Gate charge: 232nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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MSC025SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 275A Power dissipation: 500W Case: TO247-4 On-state resistance: 31mΩ Mounting: THT Gate charge: 232nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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MSC025SMA120B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 275A Power dissipation: 500W Case: TO247-4 On-state resistance: 31mΩ Mounting: THT Gate charge: 232nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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MSC025SMA120J | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A Technology: SiC Drain-source voltage: 1.2kV Drain current: 54A Pulsed drain current: 275A Power dissipation: 278W Case: SOT227B On-state resistance: 31mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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MSC025SMA120J | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A Technology: SiC Drain-source voltage: 1.2kV Drain current: 54A Pulsed drain current: 275A Power dissipation: 278W Case: SOT227B On-state resistance: 31mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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MSC025SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 63A Pulsed drain current: 222A Power dissipation: 370W Case: D3PAK On-state resistance: 31mΩ Mounting: SMD Gate charge: 232nC Kind of channel: enhanced |
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MSC025SMA120S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 63A Pulsed drain current: 222A Power dissipation: 370W Case: D3PAK On-state resistance: 31mΩ Mounting: SMD Gate charge: 232nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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MSC030SDA070B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 81W Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 148A Max. forward voltage: 1.75V Leakage current: 10µA |
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MSC030SDA070B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 81W Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 148A Max. forward voltage: 1.75V Leakage current: 10µA кількість в упаковці: 1 шт |
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MSC030SDA070BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 81W Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 146A Max. forward voltage: 1.75V Leakage current: 10µA |
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MSC030SDA070BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 81W Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 146A Max. forward voltage: 1.75V Leakage current: 10µA кількість в упаковці: 1 шт |
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MSC030SDA070K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 72W Semiconductor structure: single diode Case: TO220-2 Heatsink thickness: 1.14...1.4mm Max. forward impulse current: 146A Max. forward voltage: 1.75V Leakage current: 10µA |
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MSC030SDA070K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 30A Power dissipation: 72W Semiconductor structure: single diode Case: TO220-2 Heatsink thickness: 1.14...1.4mm Max. forward impulse current: 146A Max. forward voltage: 1.75V Leakage current: 10µA кількість в упаковці: 1 шт |
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MSC030SDA070S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 700V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: D3PAK Leakage current: 10µA Max. forward impulse current: 146A Power dissipation: 81W |
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MSC030SDA070S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 700V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: D3PAK Leakage current: 10µA Max. forward impulse current: 146A Power dissipation: 81W кількість в упаковці: 1 шт |
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MSC030SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: TO247-2 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W |
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MSC030SDA120B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: TO247-2 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W кількість в упаковці: 1 шт |
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MSC030SDA120BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 2.1V Case: TO247-3 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W |
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MSC030SDA120BCT | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 2.1V Case: TO247-3 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W кількість в упаковці: 1 шт |
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MSC030SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: TO220-2 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 130W Heatsink thickness: 1.14...1.4mm |
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MSC030SDA120K | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: TO220-2 Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 130W Heatsink thickness: 1.14...1.4mm кількість в упаковці: 1 шт |
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MSC030SDA120S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: D3PAK Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W |
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MSC030SDA120S | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: D3PAK Leakage current: 0.15mA Max. forward impulse current: 165A Power dissipation: 112W кількість в упаковці: 1 шт |
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MSC030SDA170B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.25V Case: TO247-2 Leakage current: 125µA Max. forward impulse current: 353A Power dissipation: 186W |
товар відсутній |
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MSC030SDA170B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 2.25V Case: TO247-2 Leakage current: 125µA Max. forward impulse current: 353A Power dissipation: 186W кількість в упаковці: 1 шт |
товар відсутній |
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MSC030SDA330B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 3.3kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 4.6V Case: TO247-2 Leakage current: 50µA Max. forward impulse current: 205A Power dissipation: 241W |
товар відсутній |
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MSC030SDA330B | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 3.3kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 4.6V Case: TO247-2 Leakage current: 50µA Max. forward impulse current: 205A Power dissipation: 241W кількість в упаковці: 1 шт |
товар відсутній |
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MSC035SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 283W Type of transistor: N-MOSFET On-state resistance: 44mΩ Pulsed drain current: 192A Gate charge: 99nC Polarisation: unipolar Drain current: 54A Kind of channel: enhanced Drain-source voltage: 700V |
товар відсутній |
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MSC035SMA070B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 283W Type of transistor: N-MOSFET On-state resistance: 44mΩ Pulsed drain current: 192A Gate charge: 99nC Polarisation: unipolar Drain current: 54A Kind of channel: enhanced Drain-source voltage: 700V кількість в упаковці: 1 шт |
товар відсутній |
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MSC035SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 99nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 192A Mounting: THT Case: TO247-4 Drain-source voltage: 700V Drain current: 54A On-state resistance: 44mΩ Type of transistor: N-MOSFET Power dissipation: 283W |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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MSC035SMA070B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 99nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 192A Mounting: THT Case: TO247-4 Drain-source voltage: 700V Drain current: 54A On-state resistance: 44mΩ Type of transistor: N-MOSFET Power dissipation: 283W кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
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MSC035SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W Technology: SiC Mounting: SMD Case: D3PAK Power dissipation: 206W Type of transistor: N-MOSFET On-state resistance: 44mΩ Pulsed drain current: 163A Gate charge: 99nC Polarisation: unipolar Drain current: 46A Kind of channel: enhanced Drain-source voltage: 700V |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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MSC035SMA070S | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W Technology: SiC Mounting: SMD Case: D3PAK Power dissipation: 206W Type of transistor: N-MOSFET On-state resistance: 44mΩ Pulsed drain current: 163A Gate charge: 99nC Polarisation: unipolar Drain current: 46A Kind of channel: enhanced Drain-source voltage: 700V кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
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MSC035SMA170B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 370W Type of transistor: N-MOSFET On-state resistance: 45mΩ Pulsed drain current: 200A Gate charge: 178nC Polarisation: unipolar Drain current: 48A Kind of channel: enhanced Drain-source voltage: 1.7kV |
товар відсутній |
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MSC035SMA170B | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 370W Type of transistor: N-MOSFET On-state resistance: 45mΩ Pulsed drain current: 200A Gate charge: 178nC Polarisation: unipolar Drain current: 48A Kind of channel: enhanced Drain-source voltage: 1.7kV кількість в упаковці: 1 шт |
товар відсутній |
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MSC035SMA170B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W Mounting: THT Case: TO247-4 Power dissipation: 370W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 178nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 200A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 45mΩ Type of transistor: N-MOSFET |
товар відсутній |
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MSC035SMA170B4 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W Mounting: THT Case: TO247-4 Power dissipation: 370W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 178nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 200A Drain-source voltage: 1.7kV Drain current: 48A On-state resistance: 45mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
MSC010SDA120K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
товар відсутній
MSC010SDA120K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 59W; TO220-2
Technology: SiC
Power dissipation: 59W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.4mm
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 75A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
товар відсутній
MSC010SDA170B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
товар відсутній
MSC010SDA170B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; 71W; TO247-2
Technology: SiC
Power dissipation: 71W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 90A
Load current: 10A
Max. forward voltage: 2.1V
кількість в упаковці: 1 шт
товар відсутній
MSC015SDA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
товар відсутній
MSC015SDA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 72W; TO247-2
Technology: SiC
Power dissipation: 72W
Case: TO247-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 10µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
кількість в упаковці: 1 шт
товар відсутній
MSC015SDA120K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
товар відсутній
MSC015SDA120K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 65W; TO220-2
Technology: SiC
Power dissipation: 65W
Case: TO220-2
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward impulse current: 109A
Load current: 15A
Max. forward voltage: 2V
кількість в упаковці: 1 шт
товар відсутній
MSC015SMA070B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2350.17 грн |
2+ | 2063.27 грн |
10+ | 2019.18 грн |
MSC015SMA070B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2820.21 грн |
2+ | 2571.15 грн |
10+ | 2423.02 грн |
MSC015SMA070B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
MSC015SMA070B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 99A
Pulsed drain current: 350A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MSC015SMA070S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 89A
Pulsed drain current: 315A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 215nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 89A
Pulsed drain current: 315A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 215nC
Kind of channel: enhanced
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2244.93 грн |
MSC015SMA070S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 89A
Pulsed drain current: 315A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 89A
Pulsed drain current: 315A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 215nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2693.92 грн |
MSC017SMA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
товар відсутній
MSC017SMA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MSC017SMA120B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
MSC017SMA120B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 80A; Idm: 280A; 455W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 80A
Pulsed drain current: 280A
Power dissipation: 455W
Case: TO247-4
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 249nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
MSC020SDA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
товар відсутній
MSC020SDA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; Ufmax: 2.1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO247AC Modified
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
MSC020SDA120K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
товар відсутній
MSC020SDA120K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 80W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 80W
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 115A
Max. forward voltage: 2.1V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
MSC025SMA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2447.5 грн |
MSC025SMA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2937.01 грн |
MSC025SMA120B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
MSC025SMA120B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 275A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 275A
Power dissipation: 500W
Case: TO247-4
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 232nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
MSC025SMA120J |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
MSC025SMA120J |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 54A; SOT227B; screw; Idm: 275A
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 275A
Power dissipation: 278W
Case: SOT227B
On-state resistance: 31mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
MSC025SMA120S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
товар відсутній
MSC025SMA120S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 222A; 370W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 63A
Pulsed drain current: 222A
Power dissipation: 370W
Case: D3PAK
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 232nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
товар відсутній
MSC030SDA070B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 148A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070BCT |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
товар відсутній
MSC030SDA070BCT |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 81W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 81W
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
товар відсутній
MSC030SDA070K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 30A; 72W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 30A
Power dissipation: 72W
Semiconductor structure: single diode
Case: TO220-2
Heatsink thickness: 1.14...1.4mm
Max. forward impulse current: 146A
Max. forward voltage: 1.75V
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA070S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
товар відсутній
MSC030SDA070S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 700V; 30A; D3PAK; 81W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: D3PAK
Leakage current: 10µA
Max. forward impulse current: 146A
Power dissipation: 81W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
товар відсутній
MSC030SDA120B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO247-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120BCT |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
товар відсутній
MSC030SDA120BCT |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 2.1V
Case: TO247-3
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
товар відсутній
MSC030SDA120K |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 130W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: TO220-2
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 130W
Heatsink thickness: 1.14...1.4mm
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA120S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
товар відсутній
MSC030SDA120S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D3PAK; 112W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: D3PAK
Leakage current: 0.15mA
Max. forward impulse current: 165A
Power dissipation: 112W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA170B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
товар відсутній
MSC030SDA170B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 30A; 186W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Case: TO247-2
Leakage current: 125µA
Max. forward impulse current: 353A
Power dissipation: 186W
кількість в упаковці: 1 шт
товар відсутній
MSC030SDA330B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
товар відсутній
MSC030SDA330B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 3.3kV; 30A; 241W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 4.6V
Case: TO247-2
Leakage current: 50µA
Max. forward impulse current: 205A
Power dissipation: 241W
кількість в упаковці: 1 шт
товар відсутній
MSC035SMA070B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
товар відсутній
MSC035SMA070B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 283W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 192A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 700V
кількість в упаковці: 1 шт
товар відсутній
MSC035SMA070B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 192A
Mounting: THT
Case: TO247-4
Drain-source voltage: 700V
Drain current: 54A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 283W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 192A
Mounting: THT
Case: TO247-4
Drain-source voltage: 700V
Drain current: 54A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 283W
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1365 грн |
2+ | 1199.17 грн |
3+ | 1172.71 грн |
10+ | 1155.81 грн |
MSC035SMA070B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 192A
Mounting: THT
Case: TO247-4
Drain-source voltage: 700V
Drain current: 54A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 283W
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 99nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 192A
Mounting: THT
Case: TO247-4
Drain-source voltage: 700V
Drain current: 54A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 283W
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1638 грн |
2+ | 1494.34 грн |
3+ | 1407.26 грн |
10+ | 1386.98 грн |
MSC035SMA070S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Technology: SiC
Mounting: SMD
Case: D3PAK
Power dissipation: 206W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 163A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhanced
Drain-source voltage: 700V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Technology: SiC
Mounting: SMD
Case: D3PAK
Power dissipation: 206W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 163A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhanced
Drain-source voltage: 700V
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1045.31 грн |
3+ | 917.74 грн |
MSC035SMA070S |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Technology: SiC
Mounting: SMD
Case: D3PAK
Power dissipation: 206W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 163A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhanced
Drain-source voltage: 700V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 46A; Idm: 163A; 206W
Technology: SiC
Mounting: SMD
Case: D3PAK
Power dissipation: 206W
Type of transistor: N-MOSFET
On-state resistance: 44mΩ
Pulsed drain current: 163A
Gate charge: 99nC
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhanced
Drain-source voltage: 700V
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1254.38 грн |
3+ | 1143.65 грн |
MSC035SMA170B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
товар відсутній
MSC035SMA170B |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 370W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Pulsed drain current: 200A
Gate charge: 178nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 1.7kV
кількість в упаковці: 1 шт
товар відсутній
MSC035SMA170B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
товар відсутній
MSC035SMA170B4 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Power dissipation: 370W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Pulsed drain current: 200A
Drain-source voltage: 1.7kV
Drain current: 48A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
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