Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 52 з 69
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT300A170D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Field Stop; Trench Case: D3 Application: motors Collector current: 300A Pulsed collector current: 600A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT |
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APTGT300A170D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Field Stop; Trench Case: D3 Application: motors Collector current: 300A Pulsed collector current: 600A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 3 шт |
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APTGT300A170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Field Stop; Trench Case: SP6C Application: motors Collector current: 300A Pulsed collector current: 600A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT |
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APTGT300A170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Field Stop; Trench Case: SP6C Application: motors Collector current: 300A Pulsed collector current: 600A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 3 шт |
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APTGT300A60D3G | MICROCHIP (MICROSEMI) |
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APTGT300A60G | MICROCHIP (MICROSEMI) |
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APTGT300A60TG | MICROCHIP (MICROSEMI) |
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APTGT300DA120G | MICROCHIP (MICROSEMI) |
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APTGT300DA170D3G | MICROCHIP (MICROSEMI) |
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APTGT300DA170G | MICROCHIP (MICROSEMI) |
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APTGT300DA60D3G | MICROCHIP (MICROSEMI) |
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APTGT300DA60G | MICROCHIP (MICROSEMI) |
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APTGT300DH60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge Max. off-state voltage: 0.6kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 500A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT300DH60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge Max. off-state voltage: 0.6kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 500A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 5 шт |
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APTGT300DU120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.2kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT300DU120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.2kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 4 шт |
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APTGT300DU170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT300DU170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 3 шт |
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APTGT300DU60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 0.6kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 500A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT300DU60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 0.6kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 500A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 6 шт |
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APTGT300H60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; SP6C Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 0.6kV Collector current: 300A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 500A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT300H60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; SP6C Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 0.6kV Collector current: 300A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 500A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 4 шт |
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APTGT300SK120G | MICROCHIP (MICROSEMI) |
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APTGT300SK170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C Technology: Field Stop; Trench Collector current: 300A Case: SP6C Gate-emitter voltage: ±20V Pulsed collector current: 600A Semiconductor structure: diode/transistor Max. off-state voltage: 1.7kV Application: motors Electrical mounting: FASTON connectors; screw Topology: buck chopper Mechanical mounting: screw Type of module: IGBT |
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APTGT300SK170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C Technology: Field Stop; Trench Collector current: 300A Case: SP6C Gate-emitter voltage: ±20V Pulsed collector current: 600A Semiconductor structure: diode/transistor Max. off-state voltage: 1.7kV Application: motors Electrical mounting: FASTON connectors; screw Topology: buck chopper Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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APTGT300SK60D3G | MICROCHIP (MICROSEMI) |
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APTGT300SK60G | MICROCHIP (MICROSEMI) |
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APTGT300TL60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 300A; SP6C; screw Application: photovoltaics Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 600A Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 300A Topology: three-level inverter; single-phase |
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APTGT300TL60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 300A; SP6C; screw Application: photovoltaics Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 600A Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 300A Topology: three-level inverter; single-phase кількість в упаковці: 4 шт |
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APTGT300TL65G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; SP6C; screw Application: photovoltaics Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 600A Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 300A Topology: three-level inverter; single-phase |
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APTGT300TL65G | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; SP6C; screw Application: photovoltaics Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 600A Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 300A Topology: three-level inverter; single-phase кількість в упаковці: 4 шт |
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APTGT30A170T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 30A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 70A Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge; NTC thermistor Case: SP1 |
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APTGT30A170T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 30A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 70A Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge; NTC thermistor Case: SP1 кількість в упаковці: 16 шт |
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APTGT30H170T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 30A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT30H170T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 30A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 11 шт |
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APTGT30H60T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 30A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT30H60T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 30A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 18 шт |
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APTGT30TL601G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 30A Case: SP1 Application: photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT30TL601G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 30A Case: SP1 Application: photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 18 шт |
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APTGT30X60T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 30A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT30X60T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 30A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 16 шт |
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APTGT35A120T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT35A120T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 18 шт |
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APTGT35H120T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: SP3F Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT35H120T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: SP3F Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 14 шт |
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APTGT35X120T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: SP3F Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT35X120T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: SP3F Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 11 шт |
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APTGT400A120D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: D3 Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT400A120D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: D3 Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 4 шт |
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APTGT400A120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT400A120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 4 шт |
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APTGT400A60D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Application: motors Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 800A Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Case: D3 Gate-emitter voltage: ±20V Collector current: 400A Topology: IGBT half-bridge |
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APTGT400A60D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Application: motors Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 800A Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Case: D3 Gate-emitter voltage: ±20V Collector current: 400A Topology: IGBT half-bridge кількість в упаковці: 6 шт |
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APTGT400DA120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C Type of module: IGBT Application: motors Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 800A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 400A Topology: boost chopper |
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APTGT400DA120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C Type of module: IGBT Application: motors Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 800A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 400A Topology: boost chopper кількість в упаковці: 5 шт |
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APTGT400DA60D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; D3 Type of module: IGBT Application: motors Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 800A Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Case: D3 Gate-emitter voltage: ±20V Collector current: 400A Topology: boost chopper |
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APTGT400DA60D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; D3 Type of module: IGBT Application: motors Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 800A Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Case: D3 Gate-emitter voltage: ±20V Collector current: 400A Topology: boost chopper кількість в упаковці: 8 шт |
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APTGT400DU120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.2kV Collector current: 400A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT400DU120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.2kV Collector current: 400A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 4 шт |
товар відсутній |
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APTGT400SK120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C Type of module: IGBT Application: motors Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 800A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 400A Topology: buck chopper |
товар відсутній |
APTGT300A170D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Case: D3
Application: motors
Collector current: 300A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Case: D3
Application: motors
Collector current: 300A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
APTGT300A170D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Case: D3
Application: motors
Collector current: 300A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 3 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Case: D3
Application: motors
Collector current: 300A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 3 шт
товар відсутній
APTGT300A170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Case: SP6C
Application: motors
Collector current: 300A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Case: SP6C
Application: motors
Collector current: 300A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
APTGT300A170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Case: SP6C
Application: motors
Collector current: 300A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 3 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Field Stop; Trench
Case: SP6C
Application: motors
Collector current: 300A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 3 шт
товар відсутній
APTGT300DH60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT300DH60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 5 шт
товар відсутній
APTGT300DU120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT300DU120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
товар відсутній
APTGT300DU170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT300DU170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 3 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 3 шт
товар відсутній
APTGT300DU60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT300DU60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 6 шт
товар відсутній
APTGT300H60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; SP6C
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; SP6C
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT300H60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; SP6C
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; SP6C
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
товар відсутній
APTGT300SK170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C
Technology: Field Stop; Trench
Collector current: 300A
Case: SP6C
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Application: motors
Electrical mounting: FASTON connectors; screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C
Technology: Field Stop; Trench
Collector current: 300A
Case: SP6C
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Application: motors
Electrical mounting: FASTON connectors; screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
APTGT300SK170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C
Technology: Field Stop; Trench
Collector current: 300A
Case: SP6C
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Application: motors
Electrical mounting: FASTON connectors; screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C
Technology: Field Stop; Trench
Collector current: 300A
Case: SP6C
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.7kV
Application: motors
Electrical mounting: FASTON connectors; screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
APTGT300TL60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 300A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: three-level inverter; single-phase
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 300A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: three-level inverter; single-phase
товар відсутній
APTGT300TL60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 300A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: three-level inverter; single-phase
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 300A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: three-level inverter; single-phase
кількість в упаковці: 4 шт
товар відсутній
APTGT300TL65G |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: three-level inverter; single-phase
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: three-level inverter; single-phase
товар відсутній
APTGT300TL65G |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: three-level inverter; single-phase
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: three-level inverter; single-phase
кількість в упаковці: 4 шт
товар відсутній
APTGT30A170T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 30A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 70A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Case: SP1
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 30A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 70A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Case: SP1
товар відсутній
APTGT30A170T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 30A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 70A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Case: SP1
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 30A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 70A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge; NTC thermistor
Case: SP1
кількість в упаковці: 16 шт
товар відсутній
APTGT30H170T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 30A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 30A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT30H170T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 30A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 11 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 30A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 11 шт
товар відсутній
APTGT30H60T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT30H60T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 18 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 18 шт
товар відсутній
APTGT30TL601G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP1
Application: photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP1
Application: photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT30TL601G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP1
Application: photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 18 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP1
Application: photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 18 шт
товар відсутній
APTGT30X60T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT30X60T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 30A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 16 шт
товар відсутній
APTGT35A120T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT35A120T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 18 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 18 шт
товар відсутній
APTGT35H120T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT35H120T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 14 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 14 шт
товар відсутній
APTGT35X120T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT35X120T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 11 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 11 шт
товар відсутній
APTGT400A120D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT400A120D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
товар відсутній
APTGT400A120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT400A120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
товар відсутній
APTGT400A60D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: D3
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: D3
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: IGBT half-bridge
товар відсутній
APTGT400A60D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: D3
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: IGBT half-bridge
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: D3
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: IGBT half-bridge
кількість в упаковці: 6 шт
товар відсутній
APTGT400DA120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: boost chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: boost chopper
товар відсутній
APTGT400DA120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: boost chopper
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: boost chopper
кількість в упаковці: 5 шт
товар відсутній
APTGT400DA60D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; D3
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: D3
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: boost chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; D3
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: D3
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: boost chopper
товар відсутній
APTGT400DA60D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; D3
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: D3
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: boost chopper
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; D3
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: D3
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: boost chopper
кількість в упаковці: 8 шт
товар відсутній
APTGT400DU120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT400DU120G |
![]() |
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
товар відсутній
APTGT400SK120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: buck chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C
Type of module: IGBT
Application: motors
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 400A
Topology: buck chopper
товар відсутній