Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4152) > Сторінка 51 з 70
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGT100TL60T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3 Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Power dissipation: 340W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3 Type of module: IGBT Technology: Field Stop Gate-emitter voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Collector current: 100A |
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APTGT100TL60T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3 Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Power dissipation: 340W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3 Type of module: IGBT Technology: Field Stop Gate-emitter voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Collector current: 100A кількість в упаковці: 1 шт |
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APTGT150A120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150A120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 6 шт |
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APTGT150A120T3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Mechanical mounting: screw Electrical mounting: Press-in PCB Application: motors Case: SP3 Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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APTGT150A120T3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Mechanical mounting: screw Electrical mounting: Press-in PCB Application: motors Case: SP3 Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A кількість в упаковці: 8 шт |
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APTGT150A120TG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Electrical mounting: FASTON connectors; soldering Case: SP4 Type of module: IGBT Technology: Field Stop Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A Power dissipation: 690W |
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APTGT150A120TG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Electrical mounting: FASTON connectors; soldering Case: SP4 Type of module: IGBT Technology: Field Stop Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A Power dissipation: 690W кількість в упаковці: 1 шт |
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APTGT150A60T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 150A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 350A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT150A60T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 150A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 350A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 14 шт |
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APTGT150A60T3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 150A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT150A60T3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 150A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 12 шт |
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APTGT150DA120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150DA120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 8 шт |
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APTGT150DA60T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Mechanical mounting: screw Electrical mounting: Press-in PCB Application: motors Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150DA60T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Mechanical mounting: screw Electrical mounting: Press-in PCB Application: motors Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 19 шт |
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APTGT150DH120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150DH120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 6 шт |
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APTGT150DH170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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APTGT150DH170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A кількість в упаковці: 5 шт |
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APTGT150DH60TG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Mechanical mounting: screw Electrical mounting: FASTON connectors; soldering Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150DH60TG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Mechanical mounting: screw Electrical mounting: FASTON connectors; soldering Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 1 шт |
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APTGT150DU120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2 Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150DU120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2 Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 6 шт |
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APTGT150DU120TG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Mechanical mounting: screw Electrical mounting: FASTON connectors; soldering Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150DU120TG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Mechanical mounting: screw Electrical mounting: FASTON connectors; soldering Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 8 шт |
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APTGT150H120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: H-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150H120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: H-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 4 шт |
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APTGT150H60TG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Mechanical mounting: screw Electrical mounting: FASTON connectors; soldering Application: motors Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150H60TG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Mechanical mounting: screw Electrical mounting: FASTON connectors; soldering Application: motors Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 7 шт |
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APTGT150SK120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150SK120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 8 шт |
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APTGT150SK170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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APTGT150SK170G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: motors Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A кількість в упаковці: 7 шт |
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APTGT150SK60T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor Mechanical mounting: screw Electrical mounting: Press-in PCB Application: motors Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150SK60T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor Mechanical mounting: screw Electrical mounting: Press-in PCB Application: motors Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Topology: buck chopper; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 19 шт |
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APTGT150TA60PG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P Mechanical mounting: screw Electrical mounting: Press-in PCB Application: motors Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge x3 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150TA60PG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P Mechanical mounting: screw Electrical mounting: Press-in PCB Application: motors Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge x3 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 5 шт |
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APTGT150TDU60PG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x6 Max. off-state voltage: 0.6kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
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APTGT150TDU60PG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x6 Max. off-state voltage: 0.6kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A кількість в упаковці: 5 шт |
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APTGT150TL60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 150A; SP6C; screw Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: photovoltaics Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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APTGT150TL60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 150A; SP6C; screw Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Application: photovoltaics Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A кількість в упаковці: 6 шт |
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APTGT200A120D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: D3 Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT200A120D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: D3 Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 5 шт |
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APTGT200A120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT200A120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 5 шт |
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APTGT200A170D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: motors Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Case: D3 |
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APTGT200A170D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: motors Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Case: D3 кількість в упаковці: 4 шт |
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APTGT200A60T3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Application: motors Case: SP3 Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
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APTGT200A60T3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Application: motors Case: SP3 Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A кількість в упаковці: 11 шт |
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APTGT200DA120D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; D3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: motors Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Case: D3 |
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APTGT200DA120D3G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; D3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: motors Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Case: D3 кількість в упаковці: 7 шт |
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APTGT200DA120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: motors Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Case: SP6C |
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APTGT200DA120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Application: motors Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: boost chopper Case: SP6C кількість в упаковці: 7 шт |
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APTGT200DA60T3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT200DA60T3AG | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SP3 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 13 шт |
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APTGT200DH120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT200DH120G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 5 шт |
товар відсутній |
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APTGT200DH60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge Max. off-state voltage: 0.6kV Collector current: 200A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
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APTGT200DH60G | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge Max. off-state voltage: 0.6kV Collector current: 200A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 7 шт |
товар відсутній |
APTGT100TL60T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Power dissipation: 340W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3
Type of module: IGBT
Technology: Field Stop
Gate-emitter voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Power dissipation: 340W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3
Type of module: IGBT
Technology: Field Stop
Gate-emitter voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Collector current: 100A
товар відсутній
APTGT100TL60T3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Power dissipation: 340W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3
Type of module: IGBT
Technology: Field Stop
Gate-emitter voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Collector current: 100A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 600V; Ic: 100A; SP3
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Power dissipation: 340W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3
Type of module: IGBT
Technology: Field Stop
Gate-emitter voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Collector current: 100A
кількість в упаковці: 1 шт
товар відсутній
APTGT150A120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150A120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 6 шт
товар відсутній
APTGT150A120T3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP3
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP3
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
APTGT150A120T3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP3
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP3
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 8 шт
товар відсутній
APTGT150A120TG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Power dissipation: 690W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Power dissipation: 690W
товар відсутній
APTGT150A120TG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Power dissipation: 690W
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Power dissipation: 690W
кількість в упаковці: 1 шт
товар відсутній
APTGT150A60T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 150A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 150A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT150A60T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 150A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 14 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 150A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 14 шт
товар відсутній
APTGT150A60T3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 150A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 150A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT150A60T3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 150A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 150A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
APTGT150DA120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150DA120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 8 шт
товар відсутній
APTGT150DA60T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150DA60T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 19 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 19 шт
товар відсутній
APTGT150DH120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150DH120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 6 шт
товар відсутній
APTGT150DH170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
APTGT150DH170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 5 шт
товар відсутній
APTGT150DH60TG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150DH60TG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 1 шт
товар відсутній
APTGT150DU120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150DU120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 6 шт
товар відсутній
APTGT150DU120TG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150DU120TG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 8 шт
товар відсутній
APTGT150H120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150H120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 4 шт
товар відсутній
APTGT150H60TG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Application: motors
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Application: motors
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150H60TG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Application: motors
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 7 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; soldering
Application: motors
Case: SP4
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 7 шт
товар відсутній
APTGT150SK120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150SK120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 8 шт
товар відсутній
APTGT150SK170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
APTGT150SK170G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 7 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: motors
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 7 шт
товар відсутній
APTGT150SK60T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150SK60T1G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 19 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP1
Type of module: IGBT
Technology: Field Stop; Trench
Topology: buck chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 19 шт
товар відсутній
APTGT150TA60PG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge x3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge x3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150TA60PG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge x3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SP6P
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: motors
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge x3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 5 шт
товар відсутній
APTGT150TDU60PG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x6
Max. off-state voltage: 0.6kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x6
Max. off-state voltage: 0.6kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
товар відсутній
APTGT150TDU60PG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x6
Max. off-state voltage: 0.6kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP6P
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x6
Max. off-state voltage: 0.6kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 350A
кількість в упаковці: 5 шт
товар відсутній
APTGT150TL60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 150A; SP6C; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: photovoltaics
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 150A; SP6C; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: photovoltaics
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
APTGT150TL60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 150A; SP6C; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: photovoltaics
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 6 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 150A; SP6C; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Application: photovoltaics
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 6 шт
товар відсутній
APTGT200A120D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT200A120D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: D3
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 5 шт
товар відсутній
APTGT200A120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT200A120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 5 шт
товар відсутній
APTGT200A170D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Case: D3
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Case: D3
товар відсутній
APTGT200A170D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Case: D3
кількість в упаковці: 4 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Case: D3
кількість в упаковці: 4 шт
товар відсутній
APTGT200A60T3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Application: motors
Case: SP3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Application: motors
Case: SP3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
товар відсутній
APTGT200A60T3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Application: motors
Case: SP3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 11 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Application: motors
Case: SP3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 11 шт
товар відсутній
APTGT200DA120D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; D3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: D3
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; D3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: D3
товар відсутній
APTGT200DA120D3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; D3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: D3
кількість в упаковці: 7 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; D3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: D3
кількість в упаковці: 7 шт
товар відсутній
APTGT200DA120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: SP6C
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: SP6C
товар відсутній
APTGT200DA120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: SP6C
кількість в упаковці: 7 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SP6C
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: boost chopper
Case: SP6C
кількість в упаковці: 7 шт
товар відсутній
APTGT200DA60T3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT200DA60T3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 13 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SP3
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 13 шт
товар відсутній
APTGT200DH120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT200DH120G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 5 шт
товар відсутній
APTGT200DH60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
APTGT200DH60G |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 7 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 7 шт
товар відсутній