Технічний опис APTM10UM02FAG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW, Technology: FREDFET; POWER MOS 5®, Case: SP6C, Drain-source voltage: 100V, Drain current: 429A, On-state resistance: 2.5mΩ, Power dissipation: 1.66kW, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Gate-source voltage: ±30V, Pulsed drain current: 1900A, Semiconductor structure: single transistor, кількість в упаковці: 1 шт.
Інші пропозиції APTM10UM02FAG
Фото | Назва | Виробник | Інформація |
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APTM10UM02FAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW Technology: FREDFET; POWER MOS 5® Case: SP6C Drain-source voltage: 100V Drain current: 429A On-state resistance: 2.5mΩ Power dissipation: 1.66kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 1900A Semiconductor structure: single transistor кількість в упаковці: 1 шт |
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APTM10UM02FAG | Виробник : Microchip Technology | Description: MOSFET N-CH 100V 570A SP6 |
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APTM10UM02FAG | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules DOR CC6183 |
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APTM10UM02FAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 429A; SP6C; Idm: 1900A; 1.66kW Technology: FREDFET; POWER MOS 5® Case: SP6C Drain-source voltage: 100V Drain current: 429A On-state resistance: 2.5mΩ Power dissipation: 1.66kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Pulsed drain current: 1900A Semiconductor structure: single transistor |
товар відсутній |