Технічний опис APTM10TAM09FPG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB, Technology: FREDFET; POWER MOS 5®, Semiconductor structure: transistor/transistor, Case: SP6P, Power dissipation: 390W, Drain-source voltage: 100V, Drain current: 100A, On-state resistance: 10mΩ, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Gate-source voltage: ±30V, Topology: MOSFET x3 half-bridge, Pulsed drain current: 430A, кількість в упаковці: 1 шт.
Інші пропозиції APTM10TAM09FPG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| APTM10TAM09FPG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Technology: FREDFET; POWER MOS 5® Semiconductor structure: transistor/transistor Case: SP6P Power dissipation: 390W Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 430A кількість в упаковці: 1 шт |
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APTM10TAM09FPG | Виробник : Microsemi Corporation |
Description: MOSFET 6N-CH 100V 139A SP6-P |
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| APTM10TAM09FPG | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC6509 |
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| APTM10TAM09FPG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB Technology: FREDFET; POWER MOS 5® Semiconductor structure: transistor/transistor Case: SP6P Power dissipation: 390W Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 430A |
товар відсутній |