Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4119) > Сторінка 57 з 69
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM20AM08FTG | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 832A Power dissipation: 781W Technology: FREDFET; POWER MOS 7® Drain current: 155A Drain-source voltage: 200V кількість в упаковці: 1 шт |
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| APTM20AM10FTG | MICROCHIP (MICROSEMI) |
APTM20AM10FTG Transistor modules MOSFET |
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| APTM20AM10STG | MICROCHIP (MICROSEMI) |
APTM20AM10STG Transistor modules MOSFET |
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| APTM20DAM04G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1488A Case: SP6C Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Type of module: MOSFET transistor |
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| APTM20DAM04G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 1488A Case: SP6C Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APTM20DAM05G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw Case: SP6C Topology: boost chopper Drain-source voltage: 200V Drain current: 237A On-state resistance: 6mΩ Power dissipation: 1136W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Pulsed drain current: 1268A Semiconductor structure: diode/transistor |
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| APTM20DAM05G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw Case: SP6C Topology: boost chopper Drain-source voltage: 200V Drain current: 237A On-state resistance: 6mΩ Power dissipation: 1136W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Pulsed drain current: 1268A Semiconductor structure: diode/transistor кількість в упаковці: 1 шт |
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| APTM20DAM08TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM20DAM08TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: boost chopper; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM20DUM04G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 278A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 278A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1488A Power dissipation: 1.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM20DUM04G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 278A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 278A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1488A Power dissipation: 1.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM20DUM05G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 237A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 237A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 6mΩ Pulsed drain current: 1268A Power dissipation: 1136W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM20DUM05G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 237A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 237A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 6mΩ Pulsed drain current: 1268A Power dissipation: 1136W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM20DUM08TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 155A; SP4 Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: MOSFET x2; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM20DUM08TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 155A; SP4 Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 155A Case: SP4 Topology: MOSFET x2; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 10mΩ Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM20HM08FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W Pulsed drain current: 832A Power dissipation: 781W Technology: FREDFET; POWER MOS 7® Drain current: 155A Drain-source voltage: 200V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 10mΩ Topology: H-bridge |
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| APTM20HM08FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W Pulsed drain current: 832A Power dissipation: 781W Technology: FREDFET; POWER MOS 7® Drain current: 155A Drain-source voltage: 200V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 10mΩ Topology: H-bridge кількість в упаковці: 1 шт |
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| APTM20HM10FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W Case: SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Power dissipation: 694W Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 700A Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 131A On-state resistance: 12mΩ |
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| APTM20HM10FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W Case: SP6C Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Power dissipation: 694W Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 700A Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 131A On-state resistance: 12mΩ кількість в упаковці: 1 шт |
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| APTM20HM16FTG | MICROCHIP (MICROSEMI) |
APTM20HM16FTG Transistor modules MOSFET |
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| APTM20HM20FTG | MICROCHIP (MICROSEMI) |
APTM20HM20FTG Transistor modules MOSFET |
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| APTM20HM20STG | MICROCHIP (MICROSEMI) |
APTM20HM20STG Transistor modules MOSFET |
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| APTM20SKM04G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper Case: SP6C Power dissipation: 1.25kW Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: buck chopper Technology: POWER MOS 7® Pulsed drain current: 1488A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ |
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| APTM20SKM04G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper Case: SP6C Power dissipation: 1.25kW Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: buck chopper Technology: POWER MOS 7® Pulsed drain current: 1488A Gate-source voltage: ±30V Type of module: MOSFET transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ |
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| APTM20SKM08TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Drain current: 155A Drain-source voltage: 200V |
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| APTM20SKM08TG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 10mΩ Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Pulsed drain current: 832A Power dissipation: 781W Technology: POWER MOS 7® Drain current: 155A Drain-source voltage: 200V кількість в упаковці: 1 шт |
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| APTM20TAM16FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 416A Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 19mΩ |
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| APTM20TAM16FPG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 416A Case: SP6P Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 77A On-state resistance: 19mΩ кількість в упаковці: 1 шт |
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| APTM20UM03FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW Technology: FREDFET; POWER MOS 7® Drain-source voltage: 200V Drain current: 434A Pulsed drain current: 2320A Power dissipation: 2.27kW Case: SP6C Gate-source voltage: ±30V On-state resistance: 3.6mΩ Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Topology: single transistor + series diode - parrallel diode Mechanical mounting: screw Type of module: MOSFET transistor |
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| APTM20UM03FAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW Technology: FREDFET; POWER MOS 7® Drain-source voltage: 200V Drain current: 434A Pulsed drain current: 2320A Power dissipation: 2.27kW Case: SP6C Gate-source voltage: ±30V On-state resistance: 3.6mΩ Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Topology: single transistor + series diode - parrallel diode Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APTM20UM04SAG | MICROCHIP (MICROSEMI) |
APTM20UM04SAG Transistor modules MOSFET |
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| APTM50AM17FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW Pulsed drain current: 720A Power dissipation: 1.25kW Technology: FREDFET; POWER MOS 7® Drain current: 135A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 20mΩ Topology: MOSFET half-bridge |
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| APTM50AM17FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW Pulsed drain current: 720A Power dissipation: 1.25kW Technology: FREDFET; POWER MOS 7® Drain current: 135A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 20mΩ Topology: MOSFET half-bridge кількість в упаковці: 1 шт |
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| APTM50AM19FG | MICROCHIP (MICROSEMI) |
APTM50AM19FG Transistor modules MOSFET |
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| APTM50AM24SCG | MICROCHIP (MICROSEMI) |
APTM50AM24SCG Transistor modules MOSFET |
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| APTM50AM24SG | MICROCHIP (MICROSEMI) |
APTM50AM24SG Transistor modules MOSFET |
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| APTM50AM35FTG | MICROCHIP (MICROSEMI) |
APTM50AM35FTG Transistor modules MOSFET |
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| APTM50AM38FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 67A; SP4; Idm: 360A; 694W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 67A Case: SP4 Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM50AM38FTG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 67A; SP4; Idm: 360A; 694W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 67A Case: SP4 Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM50AM38SCTG | MICROCHIP (MICROSEMI) |
APTM50AM38SCTG Transistor modules MOSFET |
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| APTM50AM38STG | MICROCHIP (MICROSEMI) |
APTM50AM38STG Transistor modules MOSFET |
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| APTM50DAM17G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw Pulsed drain current: 720A Power dissipation: 1.25kW Technology: POWER MOS 7® Drain current: 135A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 20mΩ Topology: boost chopper |
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| APTM50DAM17G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw Pulsed drain current: 720A Power dissipation: 1.25kW Technology: POWER MOS 7® Drain current: 135A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 20mΩ Topology: boost chopper кількість в упаковці: 1 шт |
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| APTM50DAM19G | MICROCHIP (MICROSEMI) |
APTM50DAM19G Transistor modules MOSFET |
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| APTM50DDA10T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A Technology: POWER MOS 7® Power dissipation: 312W Semiconductor structure: diode/transistor Case: SP3 Drain-source voltage: 500V Drain current: 28A On-state resistance: 0.12Ω Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 140A |
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| APTM50DDA10T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A Technology: POWER MOS 7® Power dissipation: 312W Semiconductor structure: diode/transistor Case: SP3 Drain-source voltage: 500V Drain current: 28A On-state resistance: 0.12Ω Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 140A кількість в упаковці: 1 шт |
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| APTM50DDAM65T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 38A; SP3; Press-in PCB; Idm: 204A Pulsed drain current: 204A Power dissipation: 390W Technology: POWER MOS 7® Drain current: 38A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: Press-in PCB Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 78mΩ Topology: boost chopper x2; NTC thermistor |
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| APTM50DDAM65T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 38A; SP3; Press-in PCB; Idm: 204A Pulsed drain current: 204A Power dissipation: 390W Technology: POWER MOS 7® Drain current: 38A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: Press-in PCB Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 78mΩ Topology: boost chopper x2; NTC thermistor кількість в упаковці: 1 шт |
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| APTM50DHM38G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 67A; SP6C; Idm: 360A; 694W; Ugs: ±30V Pulsed drain current: 360A Power dissipation: 694W Technology: POWER MOS 7® Drain current: 67A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 45mΩ Topology: asymmetrical bridge |
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| APTM50DHM38G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 67A; SP6C; Idm: 360A; 694W; Ugs: ±30V Pulsed drain current: 360A Power dissipation: 694W Technology: POWER MOS 7® Drain current: 67A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 45mΩ Topology: asymmetrical bridge кількість в упаковці: 1 шт |
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| APTM50H10FT3G | MICROCHIP (MICROSEMI) |
APTM50H10FT3G Transistor modules MOSFET |
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| APTM50H14FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 18A; SP3F; Ugs: ±30V; Idm: 105A Drain-source voltage: 500V Drain current: 18A On-state resistance: 168mΩ Case: SP3F Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: H-bridge; NTC thermistor Technology: FREDFET; POWER MOS 7® Power dissipation: 208W Pulsed drain current: 105A Gate-source voltage: ±30V Type of module: MOSFET transistor |
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| APTM50H14FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 18A; SP3F; Ugs: ±30V; Idm: 105A Drain-source voltage: 500V Drain current: 18A On-state resistance: 168mΩ Case: SP3F Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: H-bridge; NTC thermistor Technology: FREDFET; POWER MOS 7® Power dissipation: 208W Pulsed drain current: 105A Gate-source voltage: ±30V Type of module: MOSFET transistor |
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| APTM50H15FT1G | MICROCHIP (MICROSEMI) |
APTM50H15FT1G Transistor modules MOSFET |
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| APTM50HM35FG | MICROCHIP (MICROSEMI) |
APTM50HM35FG Transistor modules MOSFET |
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| APTM50HM38FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 67A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 67A Case: SP6C Topology: H-bridge Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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| APTM50HM38FG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 67A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 67A Case: SP6C Topology: H-bridge Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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| APTM50HM65FT3G | MICROCHIP (MICROSEMI) |
APTM50HM65FT3G Transistor modules MOSFET |
товар відсутній |
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| APTM50HM65FTG | MICROCHIP (MICROSEMI) |
APTM50HM65FTG Transistor modules MOSFET |
товар відсутній |
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| APTM50HM75FT3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 34A; SP3; Press-in PCB; 357W Pulsed drain current: 184A Power dissipation: 357W Technology: FREDFET; POWER MOS 7® Drain current: 34A Drain-source voltage: 500V Mechanical mounting: screw Electrical mounting: Press-in PCB Gate-source voltage: ±30V Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 90mΩ Topology: H-bridge; NTC thermistor |
товар відсутній |
| APTM20AM08FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
кількість в упаковці: 1 шт
товар відсутній
| APTM20AM10FTG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM20AM10FTG Transistor modules MOSFET
APTM20AM10FTG Transistor modules MOSFET
товар відсутній
| APTM20AM10STG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM20AM10STG Transistor modules MOSFET
APTM20AM10STG Transistor modules MOSFET
товар відсутній
| APTM20DAM04G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
товар відсутній
| APTM20DAM04G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 1488A
Case: SP6C
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM20DAM05G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw
Case: SP6C
Topology: boost chopper
Drain-source voltage: 200V
Drain current: 237A
On-state resistance: 6mΩ
Power dissipation: 1136W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 1268A
Semiconductor structure: diode/transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw
Case: SP6C
Topology: boost chopper
Drain-source voltage: 200V
Drain current: 237A
On-state resistance: 6mΩ
Power dissipation: 1136W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 1268A
Semiconductor structure: diode/transistor
товар відсутній
| APTM20DAM05G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw
Case: SP6C
Topology: boost chopper
Drain-source voltage: 200V
Drain current: 237A
On-state resistance: 6mΩ
Power dissipation: 1136W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 1268A
Semiconductor structure: diode/transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw
Case: SP6C
Topology: boost chopper
Drain-source voltage: 200V
Drain current: 237A
On-state resistance: 6mΩ
Power dissipation: 1136W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 1268A
Semiconductor structure: diode/transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM20DAM08TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM20DAM08TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: boost chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM20DUM04G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 278A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1488A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 278A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1488A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM20DUM04G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 278A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1488A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 278A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 278A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1488A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM20DUM05G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 237A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 237A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 6mΩ
Pulsed drain current: 1268A
Power dissipation: 1136W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 237A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 237A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 6mΩ
Pulsed drain current: 1268A
Power dissipation: 1136W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM20DUM05G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 237A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 237A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 6mΩ
Pulsed drain current: 1268A
Power dissipation: 1136W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 237A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 237A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 6mΩ
Pulsed drain current: 1268A
Power dissipation: 1136W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM20DUM08TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 155A; SP4
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: MOSFET x2; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 155A; SP4
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: MOSFET x2; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM20DUM08TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 155A; SP4
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: MOSFET x2; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 155A; SP4
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 155A
Case: SP4
Topology: MOSFET x2; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 10mΩ
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM20HM08FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 10mΩ
Topology: H-bridge
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 10mΩ
Topology: H-bridge
товар відсутній
| APTM20HM08FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 10mΩ
Topology: H-bridge
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W
Pulsed drain current: 832A
Power dissipation: 781W
Technology: FREDFET; POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 10mΩ
Topology: H-bridge
кількість в упаковці: 1 шт
товар відсутній
| APTM20HM10FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W
Case: SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 694W
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 700A
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 131A
On-state resistance: 12mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W
Case: SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 694W
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 700A
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 131A
On-state resistance: 12mΩ
товар відсутній
| APTM20HM10FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W
Case: SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 694W
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 700A
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 131A
On-state resistance: 12mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 131A; SP6C; Idm: 700A; 694W
Case: SP6C
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 694W
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: H-bridge
Pulsed drain current: 700A
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 131A
On-state resistance: 12mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTM20HM16FTG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM20HM16FTG Transistor modules MOSFET
APTM20HM16FTG Transistor modules MOSFET
товар відсутній
| APTM20HM20FTG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM20HM20FTG Transistor modules MOSFET
APTM20HM20FTG Transistor modules MOSFET
товар відсутній
| APTM20HM20STG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM20HM20STG Transistor modules MOSFET
APTM20HM20STG Transistor modules MOSFET
товар відсутній
| APTM20SKM04G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper
Case: SP6C
Power dissipation: 1.25kW
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: buck chopper
Technology: POWER MOS 7®
Pulsed drain current: 1488A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper
Case: SP6C
Power dissipation: 1.25kW
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: buck chopper
Technology: POWER MOS 7®
Pulsed drain current: 1488A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
товар відсутній
| APTM20SKM04G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper
Case: SP6C
Power dissipation: 1.25kW
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: buck chopper
Technology: POWER MOS 7®
Pulsed drain current: 1488A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 278A; SP6C; Topology: buck chopper
Case: SP6C
Power dissipation: 1.25kW
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: buck chopper
Technology: POWER MOS 7®
Pulsed drain current: 1488A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 278A
On-state resistance: 5mΩ
товар відсутній
| APTM20SKM08TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
товар відсутній
| APTM20SKM08TG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Ugs: ±30V; Idm: 832A; 781W
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 10mΩ
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 832A
Power dissipation: 781W
Technology: POWER MOS 7®
Drain current: 155A
Drain-source voltage: 200V
кількість в упаковці: 1 шт
товар відсутній
| APTM20TAM16FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 416A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 19mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 416A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 19mΩ
товар відсутній
| APTM20TAM16FPG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 416A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 19mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 200V; 77A; SP6P; Press-in PCB; 390W
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 416A
Case: SP6P
Semiconductor structure: transistor/transistor
Drain-source voltage: 200V
Drain current: 77A
On-state resistance: 19mΩ
кількість в упаковці: 1 шт
товар відсутній
| APTM20UM03FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 200V
Drain current: 434A
Pulsed drain current: 2320A
Power dissipation: 2.27kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 3.6mΩ
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: single transistor + series diode - parrallel diode
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 200V
Drain current: 434A
Pulsed drain current: 2320A
Power dissipation: 2.27kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 3.6mΩ
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: single transistor + series diode - parrallel diode
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APTM20UM03FAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 200V
Drain current: 434A
Pulsed drain current: 2320A
Power dissipation: 2.27kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 3.6mΩ
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: single transistor + series diode - parrallel diode
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 200V
Drain current: 434A
Pulsed drain current: 2320A
Power dissipation: 2.27kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 3.6mΩ
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: single transistor + series diode - parrallel diode
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APTM20UM04SAG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM20UM04SAG Transistor modules MOSFET
APTM20UM04SAG Transistor modules MOSFET
товар відсутній
| APTM50AM17FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: MOSFET half-bridge
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: MOSFET half-bridge
товар відсутній
| APTM50AM17FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: MOSFET half-bridge
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: FREDFET; POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: MOSFET half-bridge
кількість в упаковці: 1 шт
товар відсутній
| APTM50AM24SCG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM50AM24SCG Transistor modules MOSFET
APTM50AM24SCG Transistor modules MOSFET
товар відсутній
| APTM50AM35FTG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM50AM35FTG Transistor modules MOSFET
APTM50AM35FTG Transistor modules MOSFET
товар відсутній
| APTM50AM38FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 67A; SP4; Idm: 360A; 694W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 67A
Case: SP4
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 45mΩ
Pulsed drain current: 360A
Power dissipation: 694W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 67A; SP4; Idm: 360A; 694W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 67A
Case: SP4
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 45mΩ
Pulsed drain current: 360A
Power dissipation: 694W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM50AM38FTG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 67A; SP4; Idm: 360A; 694W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 67A
Case: SP4
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 45mΩ
Pulsed drain current: 360A
Power dissipation: 694W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 67A; SP4; Idm: 360A; 694W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 67A
Case: SP4
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 45mΩ
Pulsed drain current: 360A
Power dissipation: 694W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM50AM38SCTG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM50AM38SCTG Transistor modules MOSFET
APTM50AM38SCTG Transistor modules MOSFET
товар відсутній
| APTM50AM38STG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM50AM38STG Transistor modules MOSFET
APTM50AM38STG Transistor modules MOSFET
товар відсутній
| APTM50DAM17G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: boost chopper
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: boost chopper
товар відсутній
| APTM50DAM17G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: boost chopper
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 135A; SP6C; Idm: 720A; 1.25kW; screw
Pulsed drain current: 720A
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Drain current: 135A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 20mΩ
Topology: boost chopper
кількість в упаковці: 1 шт
товар відсутній
| APTM50DDA10T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A
Technology: POWER MOS 7®
Power dissipation: 312W
Semiconductor structure: diode/transistor
Case: SP3
Drain-source voltage: 500V
Drain current: 28A
On-state resistance: 0.12Ω
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 140A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A
Technology: POWER MOS 7®
Power dissipation: 312W
Semiconductor structure: diode/transistor
Case: SP3
Drain-source voltage: 500V
Drain current: 28A
On-state resistance: 0.12Ω
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 140A
товар відсутній
| APTM50DDA10T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A
Technology: POWER MOS 7®
Power dissipation: 312W
Semiconductor structure: diode/transistor
Case: SP3
Drain-source voltage: 500V
Drain current: 28A
On-state resistance: 0.12Ω
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 140A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A
Technology: POWER MOS 7®
Power dissipation: 312W
Semiconductor structure: diode/transistor
Case: SP3
Drain-source voltage: 500V
Drain current: 28A
On-state resistance: 0.12Ω
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 140A
кількість в упаковці: 1 шт
товар відсутній
| APTM50DDAM65T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 38A; SP3; Press-in PCB; Idm: 204A
Pulsed drain current: 204A
Power dissipation: 390W
Technology: POWER MOS 7®
Drain current: 38A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 78mΩ
Topology: boost chopper x2; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 38A; SP3; Press-in PCB; Idm: 204A
Pulsed drain current: 204A
Power dissipation: 390W
Technology: POWER MOS 7®
Drain current: 38A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 78mΩ
Topology: boost chopper x2; NTC thermistor
товар відсутній
| APTM50DDAM65T3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 38A; SP3; Press-in PCB; Idm: 204A
Pulsed drain current: 204A
Power dissipation: 390W
Technology: POWER MOS 7®
Drain current: 38A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 78mΩ
Topology: boost chopper x2; NTC thermistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 38A; SP3; Press-in PCB; Idm: 204A
Pulsed drain current: 204A
Power dissipation: 390W
Technology: POWER MOS 7®
Drain current: 38A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 78mΩ
Topology: boost chopper x2; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
| APTM50DHM38G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 67A; SP6C; Idm: 360A; 694W; Ugs: ±30V
Pulsed drain current: 360A
Power dissipation: 694W
Technology: POWER MOS 7®
Drain current: 67A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 45mΩ
Topology: asymmetrical bridge
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 67A; SP6C; Idm: 360A; 694W; Ugs: ±30V
Pulsed drain current: 360A
Power dissipation: 694W
Technology: POWER MOS 7®
Drain current: 67A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 45mΩ
Topology: asymmetrical bridge
товар відсутній
| APTM50DHM38G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 67A; SP6C; Idm: 360A; 694W; Ugs: ±30V
Pulsed drain current: 360A
Power dissipation: 694W
Technology: POWER MOS 7®
Drain current: 67A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 45mΩ
Topology: asymmetrical bridge
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 67A; SP6C; Idm: 360A; 694W; Ugs: ±30V
Pulsed drain current: 360A
Power dissipation: 694W
Technology: POWER MOS 7®
Drain current: 67A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Case: SP6C
On-state resistance: 45mΩ
Topology: asymmetrical bridge
кількість в упаковці: 1 шт
товар відсутній
| APTM50H10FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
APTM50H10FT3G Transistor modules MOSFET
APTM50H10FT3G Transistor modules MOSFET
товар відсутній
| APTM50H14FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 18A; SP3F; Ugs: ±30V; Idm: 105A
Drain-source voltage: 500V
Drain current: 18A
On-state resistance: 168mΩ
Case: SP3F
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: H-bridge; NTC thermistor
Technology: FREDFET; POWER MOS 7®
Power dissipation: 208W
Pulsed drain current: 105A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 18A; SP3F; Ugs: ±30V; Idm: 105A
Drain-source voltage: 500V
Drain current: 18A
On-state resistance: 168mΩ
Case: SP3F
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: H-bridge; NTC thermistor
Technology: FREDFET; POWER MOS 7®
Power dissipation: 208W
Pulsed drain current: 105A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
товар відсутній
| APTM50H14FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 18A; SP3F; Ugs: ±30V; Idm: 105A
Drain-source voltage: 500V
Drain current: 18A
On-state resistance: 168mΩ
Case: SP3F
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: H-bridge; NTC thermistor
Technology: FREDFET; POWER MOS 7®
Power dissipation: 208W
Pulsed drain current: 105A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 18A; SP3F; Ugs: ±30V; Idm: 105A
Drain-source voltage: 500V
Drain current: 18A
On-state resistance: 168mΩ
Case: SP3F
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: H-bridge; NTC thermistor
Technology: FREDFET; POWER MOS 7®
Power dissipation: 208W
Pulsed drain current: 105A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
товар відсутній
| APTM50H15FT1G |
|
Виробник: MICROCHIP (MICROSEMI)
APTM50H15FT1G Transistor modules MOSFET
APTM50H15FT1G Transistor modules MOSFET
товар відсутній
| APTM50HM38FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 67A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 67A
Case: SP6C
Topology: H-bridge
Electrical mounting: FASTON connectors; screw
On-state resistance: 45mΩ
Pulsed drain current: 360A
Power dissipation: 694W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 67A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 67A
Case: SP6C
Topology: H-bridge
Electrical mounting: FASTON connectors; screw
On-state resistance: 45mΩ
Pulsed drain current: 360A
Power dissipation: 694W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| APTM50HM38FG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 67A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 67A
Case: SP6C
Topology: H-bridge
Electrical mounting: FASTON connectors; screw
On-state resistance: 45mΩ
Pulsed drain current: 360A
Power dissipation: 694W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 67A; SP6C; Topology: H-bridge
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 500V
Drain current: 67A
Case: SP6C
Topology: H-bridge
Electrical mounting: FASTON connectors; screw
On-state resistance: 45mΩ
Pulsed drain current: 360A
Power dissipation: 694W
Technology: FREDFET; POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| APTM50HM65FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
APTM50HM65FT3G Transistor modules MOSFET
APTM50HM65FT3G Transistor modules MOSFET
товар відсутній
| APTM50HM65FTG |
|
Виробник: MICROCHIP (MICROSEMI)
APTM50HM65FTG Transistor modules MOSFET
APTM50HM65FTG Transistor modules MOSFET
товар відсутній
| APTM50HM75FT3G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 34A; SP3; Press-in PCB; 357W
Pulsed drain current: 184A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 90mΩ
Topology: H-bridge; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 34A; SP3; Press-in PCB; 357W
Pulsed drain current: 184A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Drain current: 34A
Drain-source voltage: 500V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 90mΩ
Topology: H-bridge; NTC thermistor
товар відсутній