![IXTY1R6N50D2 IXTY1R6N50D2](https://www.mouser.com/images/mouserelectronics/lrg/TO_252_AA_3_ITP_t.jpg)
на замовлення 2780 шт:
термін постачання 420-429 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 268.31 грн |
10+ | 263.68 грн |
25+ | 183.29 грн |
70+ | 156.11 грн |
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Технічний опис IXTY1R6N50D2 IXYS
Description: MOSFET N-CH 500V 1.6A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Інші пропозиції IXTY1R6N50D2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTY1R6N50D2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns Mounting: SMD Gate charge: 23.7nC Kind of channel: depleted Gate-source voltage: ±20V Case: TO252 Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 1.6A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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![]() |
IXTY1R6N50D2 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
товар відсутній |
|
![]() |
IXTY1R6N50D2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns Mounting: SMD Gate charge: 23.7nC Kind of channel: depleted Gate-source voltage: ±20V Case: TO252 Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 1.6A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: tube |
товар відсутній |