![IXTX4N300P3HV IXTX4N300P3HV](https://www.mouser.com/images/littelfuse/lrg/TO_247_3_t.jpg)
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 6519.16 грн |
10+ | 6104.64 грн |
30+ | 5168.31 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTX4N300P3HV IXYS
Description: MOSFET N-CH 3000V 4A TO247PLUSHV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 12.5Ohm @ 2A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247PLUS-HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V.
Інші пропозиції IXTX4N300P3HV
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IXTX4N300P3HV | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns Reverse recovery time: 420ns Drain-source voltage: 3kV Drain current: 4A Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 139nC Technology: Polar3™ Kind of channel: enhanced Mounting: THT Case: TO247PLUS-HV кількість в упаковці: 1 шт |
товар відсутній |
||
![]() |
IXTX4N300P3HV | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 12.5Ohm @ 2A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247PLUS-HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 3000 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V |
товар відсутній |
|
IXTX4N300P3HV | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns Reverse recovery time: 420ns Drain-source voltage: 3kV Drain current: 4A Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 139nC Technology: Polar3™ Kind of channel: enhanced Mounting: THT Case: TO247PLUS-HV |
товар відсутній |