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IXFH76N15T2 IXFH76N15T2 IXYS IXFA(H,P)76N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
1+446.88 грн
3+ 283.16 грн
9+ 267.22 грн
IXFH96N15P IXFH96N15P IXYS IXFH96N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 96A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+494.45 грн
3+ 312.85 грн
IXFK180N15P IXFK180N15P IXYS IXFK180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+918.71 грн
3+ 806.74 грн
IXFP102N15T IXFP102N15T IXYS IXFP102N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFP130N15X3 IXFP130N15X3 IXYS IXF_130N15X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+577.12 грн
IXFX180N15P IXFX180N15P IXYS IXFX180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1177.64 грн
2+ 745.91 грн
4+ 704.63 грн
IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
1+860.22 грн
2+ 643.08 грн
4+ 608.32 грн
10+ 607.59 грн
IXTH88N15 IXTH88N15 IXYS IXTH88N15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 150ns
товар відсутній
IXTP102N15T IXTP102N15T IXYS IXTA(H,P,Q)102N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
товар відсутній
IXTP130N15X4 IXTP130N15X4 IXYS IXTH(P)130N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+420.36 грн
3+ 279.54 грн
9+ 264.33 грн
IXFN300N10P IXFN300N10P IXYS IXFN300N10P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 295A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 279nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
IXFN300N20X3 IXFN300N20X3 IXYS IXFN300N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 172ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
DSEI8-06AS-TUB DSEI8-06AS-TUB IXYS DSEI8-06A_DSEI8-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Technology: FRED
Power dissipation: 50W
Case: TO263AB
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Features of semiconductor devices: fast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. forward impulse current: 100A
Type of diode: rectifying
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
3+128.18 грн
9+ 99.21 грн
24+ 93.42 грн
Мінімальне замовлення: 3
IXTA08N120P IXTA08N120P IXYS IXT_08N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 900ns
товар відсутній
IXTP08N120P IXTP08N120P IXYS IXT_08N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 25Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
DSEI8-06A DSEI8-06A IXYS media?resourcetype=datasheets&itemid=e637c6ed-d932-4130-b9e4-8226a2821674&filename=Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50W; 35ns
Technology: FRED
Power dissipation: 50W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Features of semiconductor devices: fast switching
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.3V
Load current: 8A
Max. forward impulse current: 100A
Type of diode: rectifying
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
4+99.94 грн
10+ 89.07 грн
11+ 78.21 грн
Мінімальне замовлення: 4
MG17100S-BN4MM IXYS media?resourcetype=datasheets&itemid=d36b1b0c-5cf1-4465-a1e5-70b62c84a3c4&filename=littelfuse_power_semiconductor_igbt_module_mg17100s_bn4mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
MG1775S-BN4MM IXYS media?resourcetype=datasheets&itemid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d&filename=littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
VUI30-12N1 IXYS VUI30-12N1.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-phase PFC; Urmax: 1.2kV; Ic: 65A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase PFC
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: V1-A-Pack
Application: Inverter
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Technology: FRED; NPT
Mechanical mounting: screw
товар відсутній
IXTH32N65X IXTH32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
1+497.57 грн
3+ 330.95 грн
7+ 312.85 грн
IXTH52N65X IXTH52N65X IXYS IXTH52N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 435ns
товар відсутній
IXTH62N65X2 IXTH62N65X2 IXYS IXTH62N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 445ns
товар відсутній
IXFH26N65X2 IXFH26N65X2 IXYS media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFR32N80Q3 IXFR32N80Q3 IXYS IXFR32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.3Ω
Drain current: 24A
Drain-source voltage: 800V
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
IXFX32N80P IXFX32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
IXFX32N80Q3 IXFX32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
DSEP30-06A DSEP30-06A IXYS DSEP30-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 163 шт:
термін постачання 21-30 дні (днів)
2+350.17 грн
4+ 221.6 грн
11+ 209.29 грн
Мінімальне замовлення: 2
IXTH76N25T IXTH76N25T IXYS IXTA(H,I,P,Q)76N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO247-3; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
1+412.56 грн
3+ 344.71 грн
4+ 260.71 грн
9+ 246.95 грн
IX2127G IX2127G IXYS IX2127.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Supply voltage: 9...12V
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: THT
Case: DIP8
Output current: -500...250mA
Type of integrated circuit: driver
Number of channels: 1
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
4+99.05 грн
5+ 81.11 грн
10+ 73.14 грн
32+ 68.8 грн
50+ 68.07 грн
Мінімальне замовлення: 4
IX2127N IX2127N IXYS IX2127.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Supply voltage: 9...12V
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: SMD
Case: SO8
Output current: -500...250mA
Type of integrated circuit: driver
Number of channels: 1
на замовлення 852 шт:
термін постачання 21-30 дні (днів)
4+108.4 грн
5+ 89.07 грн
11+ 79.66 грн
29+ 75.32 грн
100+ 74.59 грн
Мінімальне замовлення: 4
IXDF602PI IXDF602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 935 шт:
термін постачання 21-30 дні (днів)
5+82.67 грн
6+ 68.8 грн
10+ 60.83 грн
16+ 52.87 грн
43+ 49.97 грн
Мінімальне замовлення: 5
IXDF602SI IXDF602SI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
IXDF602SIA IXDF602SIA IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
5+82.67 грн
6+ 68.07 грн
16+ 52.14 грн
44+ 49.24 грн
Мінімальне замовлення: 5
IXDF602SITR IXDF602SITR IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
IXDI609PI IXDI609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
IXDI609SI IXDI609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
IXDI609SIA IXDI609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1046 шт:
термін постачання 21-30 дні (днів)
4+116.98 грн
5+ 98.49 грн
12+ 73.87 грн
31+ 69.52 грн
Мінімальне замовлення: 4
IXDI609SITR IXYS IXD_609.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
IXDI609YI IXDI609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 115ns
Kind of output: inverting
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 105ns
на замовлення 287 шт:
термін постачання 21-30 дні (днів)
2+202.77 грн
3+ 166.56 грн
6+ 154.25 грн
10+ 149.91 грн
15+ 145.56 грн
50+ 140.49 грн
Мінімальне замовлення: 2
IXFA14N85XHV IXFA14N85XHV IXYS IXFA(H,P)14N85X_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO263HV
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
2+317.42 грн
3+ 264.33 грн
9+ 250.57 грн
10+ 246.22 грн
50+ 241.15 грн
Мінімальне замовлення: 2
IXFH14N85X IXFH14N85X IXYS IXFA(H,P)14N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
товар відсутній
IXFP14N85X IXFP14N85X IXYS IXFA(H,P)14N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
товар відсутній
DPG30I300HA DPG30I300HA IXYS DPG30I300HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Power dissipation: 160W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
2+265.16 грн
3+ 221.6 грн
5+ 168.01 грн
14+ 158.6 грн
Мінімальне замовлення: 2
DPG30I300PA DPG30I300PA IXYS DPG30I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
товар відсутній
DPG30IM300PC-TRL IXYS DPG30IM300PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30A; 35ns; TO263AB; Ufmax: 1.66V; 175W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.66V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
товар відсутній
IXA4IF1200TC IXA4IF1200TC IXYS IXA4IF1200TC.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO268
Collector-emitter voltage: 1.2kV
товар відсутній
ITF48IF1200HR ITF48IF1200HR IXYS ITF48IF1200HR.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Mounting: THT
Kind of package: tube
Case: ISO247™
Power dissipation: 390W
Technology: Trench; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Gate charge: 175nC
товар відсутній
IXA12IF1200HB IXA12IF1200HB IXYS IXA12IF1200HB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
2+278.42 грн
3+ 232.46 грн
5+ 183.94 грн
13+ 173.8 грн
Мінімальне замовлення: 2
IXA12IF1200PB IXA12IF1200PB IXYS IXA12IF1200PB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO220-3
Collector-emitter voltage: 1.2kV
на замовлення 231 шт:
термін постачання 21-30 дні (днів)
2+234.75 грн
3+ 196.25 грн
6+ 155.7 грн
15+ 147.01 грн
Мінімальне замовлення: 2
DSA30C100HB DSA30C100HB IXYS DSA30C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
2+206.67 грн
3+ 173.8 грн
7+ 137.6 грн
17+ 130.35 грн
Мінімальне замовлення: 2
DSA50C100HB DSA50C100HB IXYS DSA50C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 440A
Max. forward voltage: 0.72V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
2+251.9 грн
3+ 210.74 грн
6+ 168.01 грн
14+ 159.32 грн
Мінімальне замовлення: 2
DSA70C100HB DSA70C100HB IXYS DSA70C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 35Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 35A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.55kA
Max. forward voltage: 0.74V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+389.95 грн
MCMA110P1600TA MCMA110P1600TA IXYS media?resourcetype=datasheets&itemid=A7FB5F81-CFF4-4B3A-91D3-8ABE12551D67&filename=Littelfuse-Power-Semiconductors-MCMA110P1600TA-Datasheet Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
IXFN200N10P IXFN200N10P IXYS IXFN200N10P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
IXFN230N20T IXFN230N20T IXYS IXFN230N20T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN240N15T2 IXFN240N15T2 IXYS IXFN240N15T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 460nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2273.38 грн
IXFN240N25X3 IXFN240N25X3 IXYS IXFN240N25X3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.5mΩ
Pulsed drain current: 600A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 345nC
Reverse recovery time: 165ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
IXFN27N120SK IXFN27N120SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
IXFN320N17T2 IXFN320N17T2 IXYS IXFN320N17T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 170V
Drain current: 260A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 800A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 640nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
IXFH76N15T2 IXFA(H,P)76N15T2.pdf
IXFH76N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+446.88 грн
3+ 283.16 грн
9+ 267.22 грн
IXFH96N15P IXFH96N15P.pdf
IXFH96N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 96A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+494.45 грн
3+ 312.85 грн
IXFK180N15P IXFK180N15P.pdf
IXFK180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+918.71 грн
3+ 806.74 грн
IXFP102N15T IXFP102N15T.pdf
IXFP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFP130N15X3 IXF_130N15X3.pdf
IXFP130N15X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+577.12 грн
IXFX180N15P IXFX180N15P.pdf
IXFX180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1177.64 грн
2+ 745.91 грн
4+ 704.63 грн
IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+860.22 грн
2+ 643.08 грн
4+ 608.32 грн
10+ 607.59 грн
IXTH88N15 IXTH88N15.pdf
IXTH88N15
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 150ns
товар відсутній
IXTP102N15T IXTA(H,P,Q)102N15T.pdf
IXTP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
товар відсутній
IXTP130N15X4 IXTH(P)130N15X4.pdf
IXTP130N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+420.36 грн
3+ 279.54 грн
9+ 264.33 грн
IXFN300N10P IXFN300N10P.pdf
IXFN300N10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 295A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 279nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
IXFN300N20X3 IXFN300N20X3.pdf 200VProductBrief.pdf
IXFN300N20X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 172ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
DSEI8-06AS-TUB DSEI8-06A_DSEI8-06AS.pdf
DSEI8-06AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Technology: FRED
Power dissipation: 50W
Case: TO263AB
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Features of semiconductor devices: fast switching
Reverse recovery time: 35ns
Max. forward voltage: 1.3V
Load current: 8A
Max. forward impulse current: 100A
Type of diode: rectifying
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+128.18 грн
9+ 99.21 грн
24+ 93.42 грн
Мінімальне замовлення: 3
IXTA08N120P IXT_08N120P.pdf
IXTA08N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 900ns
товар відсутній
IXTP08N120P IXT_08N120P.pdf
IXTP08N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 25Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
DSEI8-06A media?resourcetype=datasheets&itemid=e637c6ed-d932-4130-b9e4-8226a2821674&filename=Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet
DSEI8-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50W; 35ns
Technology: FRED
Power dissipation: 50W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Features of semiconductor devices: fast switching
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.3V
Load current: 8A
Max. forward impulse current: 100A
Type of diode: rectifying
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+99.94 грн
10+ 89.07 грн
11+ 78.21 грн
Мінімальне замовлення: 4
MG17100S-BN4MM media?resourcetype=datasheets&itemid=d36b1b0c-5cf1-4465-a1e5-70b62c84a3c4&filename=littelfuse_power_semiconductor_igbt_module_mg17100s_bn4mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
MG1775S-BN4MM media?resourcetype=datasheets&itemid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d&filename=littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
VUI30-12N1 VUI30-12N1.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-phase PFC; Urmax: 1.2kV; Ic: 65A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase PFC
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: V1-A-Pack
Application: Inverter
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Technology: FRED; NPT
Mechanical mounting: screw
товар відсутній
IXTH32N65X IXTH(P,Q)32N65X.pdf
IXTH32N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+497.57 грн
3+ 330.95 грн
7+ 312.85 грн
IXTH52N65X IXTH52N65X.pdf
IXTH52N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 435ns
товар відсутній
IXTH62N65X2 IXTH62N65X2.pdf
IXTH62N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 445ns
товар відсутній
IXFH26N65X2 media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf
IXFH26N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFR32N80Q3 IXFR32N80Q3.pdf
IXFR32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.3Ω
Drain current: 24A
Drain-source voltage: 800V
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
IXFX32N80P IXFK(X)32N80P.pdf
IXFX32N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
IXFX32N80Q3 IXFK(X)32N80Q3.pdf
IXFX32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
DSEP30-06A DSEP30-06A.pdf
DSEP30-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 163 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+350.17 грн
4+ 221.6 грн
11+ 209.29 грн
Мінімальне замовлення: 2
IXTH76N25T IXTA(H,I,P,Q)76N25T.pdf
IXTH76N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO247-3; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+412.56 грн
3+ 344.71 грн
4+ 260.71 грн
9+ 246.95 грн
IX2127G IX2127.pdf
IX2127G
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Supply voltage: 9...12V
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: THT
Case: DIP8
Output current: -500...250mA
Type of integrated circuit: driver
Number of channels: 1
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+99.05 грн
5+ 81.11 грн
10+ 73.14 грн
32+ 68.8 грн
50+ 68.07 грн
Мінімальне замовлення: 4
IX2127N IX2127.pdf
IX2127N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Supply voltage: 9...12V
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Voltage class: 600V
Mounting: SMD
Case: SO8
Output current: -500...250mA
Type of integrated circuit: driver
Number of channels: 1
на замовлення 852 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+108.4 грн
5+ 89.07 грн
11+ 79.66 грн
29+ 75.32 грн
100+ 74.59 грн
Мінімальне замовлення: 4
IXDF602PI IXD_602.pdf
IXDF602PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 935 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+82.67 грн
6+ 68.8 грн
10+ 60.83 грн
16+ 52.87 грн
43+ 49.97 грн
Мінімальне замовлення: 5
IXDF602SI IXD_602.pdf
IXDF602SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
IXDF602SIA IXD_602.pdf
IXDF602SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+82.67 грн
6+ 68.07 грн
16+ 52.14 грн
44+ 49.24 грн
Мінімальне замовлення: 5
IXDF602SITR IXD_602.pdf
IXDF602SITR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
IXDI609PI IXDD609CI.pdf
IXDI609PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
IXDI609SI IXDD609CI.pdf
IXDI609SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
IXDI609SIA IXDD609CI.pdf
IXDI609SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1046 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+116.98 грн
5+ 98.49 грн
12+ 73.87 грн
31+ 69.52 грн
Мінімальне замовлення: 4
IXDI609SITR IXD_609.pdf
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
IXDI609YI IXDD609CI.pdf
IXDI609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 115ns
Kind of output: inverting
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 105ns
на замовлення 287 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+202.77 грн
3+ 166.56 грн
6+ 154.25 грн
10+ 149.91 грн
15+ 145.56 грн
50+ 140.49 грн
Мінімальне замовлення: 2
IXFA14N85XHV IXFA(H,P)14N85X_HV.pdf
IXFA14N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO263HV
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+317.42 грн
3+ 264.33 грн
9+ 250.57 грн
10+ 246.22 грн
50+ 241.15 грн
Мінімальне замовлення: 2
IXFH14N85X IXFA(H,P)14N85X_HV.pdf
IXFH14N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
товар відсутній
IXFP14N85X IXFA(H,P)14N85X_HV.pdf
IXFP14N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
товар відсутній
DPG30I300HA DPG30I300HA.pdf
DPG30I300HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Power dissipation: 160W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+265.16 грн
3+ 221.6 грн
5+ 168.01 грн
14+ 158.6 грн
Мінімальне замовлення: 2
DPG30I300PA DPG30I300PA.pdf
DPG30I300PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
товар відсутній
DPG30IM300PC-TRL DPG30IM300PC.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30A; 35ns; TO263AB; Ufmax: 1.66V; 175W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.66V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
товар відсутній
IXA4IF1200TC IXA4IF1200TC.pdf
IXA4IF1200TC
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 45W
Kind of package: tube
Gate charge: 12nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO268
Collector-emitter voltage: 1.2kV
товар відсутній
ITF48IF1200HR ITF48IF1200HR.pdf
ITF48IF1200HR
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Mounting: THT
Kind of package: tube
Case: ISO247™
Power dissipation: 390W
Technology: Trench; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Gate charge: 175nC
товар відсутній
IXA12IF1200HB IXA12IF1200HB.pdf
IXA12IF1200HB
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+278.42 грн
3+ 232.46 грн
5+ 183.94 грн
13+ 173.8 грн
Мінімальне замовлення: 2
IXA12IF1200PB IXA12IF1200PB.pdf
IXA12IF1200PB
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Technology: Planar; Sonic FRD™; XPT™
Case: TO220-3
Collector-emitter voltage: 1.2kV
на замовлення 231 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+234.75 грн
3+ 196.25 грн
6+ 155.7 грн
15+ 147.01 грн
Мінімальне замовлення: 2
DSA30C100HB DSA30C100HB.pdf
DSA30C100HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+206.67 грн
3+ 173.8 грн
7+ 137.6 грн
17+ 130.35 грн
Мінімальне замовлення: 2
DSA50C100HB DSA50C100HB.pdf
DSA50C100HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 440A
Max. forward voltage: 0.72V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+251.9 грн
3+ 210.74 грн
6+ 168.01 грн
14+ 159.32 грн
Мінімальне замовлення: 2
DSA70C100HB DSA70C100HB.pdf
DSA70C100HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 35Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 35A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.55kA
Max. forward voltage: 0.74V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+389.95 грн
MCMA110P1600TA media?resourcetype=datasheets&itemid=A7FB5F81-CFF4-4B3A-91D3-8ABE12551D67&filename=Littelfuse-Power-Semiconductors-MCMA110P1600TA-Datasheet
MCMA110P1600TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
IXFN200N10P description IXFN200N10P.pdf
IXFN200N10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
IXFN230N20T IXFN230N20T.pdf
IXFN230N20T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN240N15T2 IXFN240N15T2.pdf
IXFN240N15T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 460nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2273.38 грн
IXFN240N25X3 IXFN240N25X3.pdf
IXFN240N25X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.5mΩ
Pulsed drain current: 600A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 345nC
Reverse recovery time: 165ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
IXFN27N120SK
IXFN27N120SK
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
IXFN320N17T2 IXFN320N17T2.pdf
IXFN320N17T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 170V
Drain current: 260A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 800A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 640nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
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