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IXFT96N20P IXFT96N20P IXYS IXFH(T,V)96N20P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 24mΩ
товар відсутній
IXTH96N20P IXTH96N20P IXYS IXTH96N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO247-3
Mounting: THT
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 24mΩ
Reverse recovery time: 160ns
товар відсутній
IXTQ96N20P IXTQ96N20P IXYS IXTH96N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+527.15 грн
3+ 370.31 грн
7+ 349.74 грн
IXFH120N20P IXFH120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 100ns
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
1+841.9 грн
2+ 561.85 грн
3+ 561.14 грн
5+ 530.64 грн
IXFK170N20P IXFK170N20P IXYS IXF_170N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
IXFX170N20P IXFX170N20P IXYS IXF_170N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 185nC
Polarisation: unipolar
Drain current: 170A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 14mΩ
товар відсутній
IXTQ120N20P IXTQ120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Kind of package: tube
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 180ns
Drain-source voltage: 200V
Drain current: 120A
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+721.2 грн
2+ 538.44 грн
VUE22-06NO7 VUE22-06NO7 IXYS VUE22-06NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.09V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1062.69 грн
VUE22-12NO7 VUE22-12NO7 IXYS VUE22-12NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 24A; Ifsm: 40A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 24A
Max. forward impulse current: 40A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.92V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+1106.24 грн
3+ 971.18 грн
IXFN40N90P IXFN40N90P IXYS IXFN40N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 33A; SOT227B; screw; Idm: 80A; 695W
Type of module: MOSFET transistor
Gate charge: 230nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 33A
Kind of channel: enhanced
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.23Ω
Reverse recovery time: 300ns
Pulsed drain current: 80A
Power dissipation: 695W
товар відсутній
DSS2X121-0045B DSS2X121-0045B IXYS DSS2x121-0045B.pdf description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Case: SOT227B
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.6kA
товар відсутній
IXGH25N160 IXGH25N160 IXYS IXGH(T)25N160.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
товар відсутній
IXFH40N85X IXFH40N85X IXYS IXF_40N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
IXFT40N85XHV IXFT40N85XHV IXYS IXFT40N85X.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
товар відсутній
MMIX1F44N100Q3
+1
 		MMIX1F44N100Q3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Mounting: SMD
Reverse recovery time: 300ns
Case: SMPD
Power dissipation: 694W
Technology: HiPerFET™; Q3-Class
Pulsed drain current: 110A
Gate charge: 264nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 245mΩ
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+3119.32 грн
XS170S XS170S IXYS XS170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 249 шт:
термін постачання 21-30 дні (днів)
2+266.63 грн
8+ 112.09 грн
21+ 106.41 грн
Мінімальне замовлення: 2
XS170STR IXYS XS170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
DSEP2X61-12A DSEP2X61-12A IXYS DSEP2x61-12A.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 800A
Max. forward voltage: 2.42V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 60A x2
Type of module: diode
Semiconductor structure: double independent
товар відсутній
MCD501-16IO2 MCD501-16IO2 IXYS m501-12io2-18io2.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 503A; ComPack; Ifsm: 14.5kA; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 503A
Case: ComPack
Max. forward impulse current: 14.5kA
Electrical mounting: screw
Max. load current: 1195A
Threshold on-voltage: 0.85V
Kind of package: bulk
Mechanical mounting: screw
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+14667.62 грн
MCD501-18IO2 IXYS m501-12io2-18io2.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 503A; ComPack; Ifsm: 14.5kA; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 503A
Case: ComPack
Max. forward impulse current: 14.5kA
Electrical mounting: screw
Max. load current: 1195A
Threshold on-voltage: 0.85V
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCD44-12io8B MCD44-12io8B IXYS MCD44-12io8B.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Max. load current: 77A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
Threshold on-voltage: 0.85V
товар відсутній
MDD44-12N1B MDD44-12N1B IXYS MDD44-12N1B-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
товар відсутній
IXTP10P15T IXTP10P15T IXYS IXT_10P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
3+144.72 грн
7+ 131.24 грн
18+ 123.44 грн
Мінімальне замовлення: 3
IXTP10P50P IXTP10P50P IXYS IXT_10P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
товар відсутній
IXTA52P10P IXTA52P10P IXYS IXT_52P10P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
на замовлення 308 шт:
термін постачання 21-30 дні (днів)
1+427.06 грн
3+ 356.83 грн
4+ 274.54 грн
9+ 259.64 грн
IXTH52P10P IXTH52P10P IXYS IXT_52P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
1+502.7 грн
3+ 331.29 грн
7+ 313.56 грн
IXTP52P10P IXTP52P10P IXYS IXT_52P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO220AB
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
товар відсутній
IXTQ52P10P IXTQ52P10P IXYS IXT_52P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
товар відсутній
IXTN170P10P IXTN170P10P IXYS IXTN170P10P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -510A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Power dissipation: 890W
Polarisation: unipolar
товар відсутній
IXTR170P10P IXTR170P10P IXYS IXTR170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -100A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 312W
Polarisation: unipolar
товар відсутній
IXTX170P10P IXTX170P10P IXYS IXTX170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Kind of package: tube
Gate charge: 240nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
1+1119.99 грн
3+ 983.24 грн
PLB190 PLB190 IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+547.01 грн
4+ 244.04 грн
10+ 230.56 грн
PLB190S PLB190S IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+547.01 грн
4+ 244.04 грн
10+ 230.56 грн
PLB190STR IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
товар відсутній
MIXA20W1200TML IXYS MIXA20W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: fans; for pump; motors
Case: E1-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 45A
Power dissipation: 100W
товар відсутній
MIXA30W1200TML IXYS MIXA30W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: fans; for pump; motors
Case: E1-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 150W
товар відсутній
MIXA40W1200TML IXYS MIXA40W1200TML.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: fans; for pump; motors
Case: E1-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 105A
Power dissipation: 195W
товар відсутній
MIXA80W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 84A
товар відсутній
MIXG70W1200TED IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E2-Pack
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 79A
товар відсутній
VUB120-16NOXT IXYS VUB120-16NOX.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: V2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
товар відсутній
MCC162-16io1 MCC162-16io1 IXYS MCC162-16IO1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC162-16IO1B IXYS media?resourcetype=datasheets&amp;itemid=39564359-d67a-4cc3-b2ec-a1b9c4f6f8d0&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc162-14io1b_mcc162-16io1b_mcc162-18io1b_mcd162-16io1b%2520datasheet.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
IXTA1N120P IXTA1N120P IXYS IXTY(A,P)1N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO263
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
IXTP1N120P IXTP1N120P IXYS IXTY(A,P)1N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
IXTY1N120P IXTY1N120P IXYS IXTY(A,P)1N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
на замовлення 128 шт:
термін постачання 21-30 дні (днів)
3+186.41 грн
5+ 155.36 грн
7+ 131.24 грн
18+ 123.44 грн
Мінімальне замовлення: 3
IXTP02N120P IXTP02N120P IXYS IXTP(Y)02N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO220AB
On-state resistance: 75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
товар відсутній
IXTY02N120P IXTY02N120P IXYS IXTP(Y)02N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
товар відсутній
IXTA3N50D2 IXTA3N50D2 IXYS IXTA(P)3N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
товар відсутній
IXFA30N25X3 IXFA30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
товар відсутній
IXFA36N30P3 IXFA36N30P3 IXYS IXFA(P)36N30P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO263; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 347W
Case: TO263
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
товар відсутній
IXFA60N25X3 IXFA60N25X3 IXYS IXFA(P,Q)60N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO263
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
1+399.56 грн
3+ 333.42 грн
7+ 316.4 грн
10+ 311.43 грн
50+ 304.34 грн
IXFA76N15T2 IXFA76N15T2 IXYS IXFA(H,P)76N15T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO263; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
2+274.27 грн
3+ 229.14 грн
4+ 218.5 грн
10+ 213.53 грн
11+ 206.44 грн
Мінімальне замовлення: 2
IXFA80N25X3 IXFA80N25X3 IXYS IXFA80N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO263
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 120ns
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+550.06 грн
3+ 386.63 грн
6+ 365.35 грн
IXTA32N20T IXTA32N20T IXYS IXTA(P)32N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
товар відсутній
IXFA230N075T2 IXFA230N075T2 IXYS IXFA(P)230N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+417.13 грн
3+ 348.32 грн
4+ 263.9 грн
9+ 249 грн
IXFA230N075T2-7 IXFA230N075T2-7 IXYS IXFA230N075T2-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
2+344.55 грн
3+ 273.83 грн
9+ 258.93 грн
Мінімальне замовлення: 2
IXTA120N075T2 IXTA120N075T2 IXYS IXTA(P)120N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
On-state resistance: 7.7mΩ
Kind of package: tube
Power dissipation: 250W
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Reverse recovery time: 50ns
Kind of channel: enhanced
Drain current: 120A
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
2+229.96 грн
3+ 192.25 грн
6+ 153.94 грн
15+ 145.43 грн
Мінімальне замовлення: 2
VUE30-20NO1 IXYS VUE30-20NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 30A; Ifsm: 75A; screw
Type of bridge rectifier: three-phase
Max. off-state voltage: 2kV
Load current: 30A
Max. forward impulse current: 75A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 5.41V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Technology: FRED
товар відсутній
VUE35-06NO7 IXYS VUE35-06NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 56A; Ifsm: 110A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 56A
Max. forward impulse current: 110A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.01V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
товар відсутній
FMM22-05PF FMM22-05PF IXYS Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Type of transistor: N-MOSFET x2
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 55A
Power dissipation: 132W
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
Reverse recovery time: 200ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+1232.3 грн
2+ 1081.85 грн
IXFT96N20P IXFH(T,V)96N20P.pdf
IXFT96N20P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 24mΩ
товар відсутній
IXTH96N20P IXTH96N20P-DTE.pdf
IXTH96N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO247-3
Mounting: THT
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 24mΩ
Reverse recovery time: 160ns
товар відсутній
IXTQ96N20P IXTH96N20P-DTE.pdf
IXTQ96N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+527.15 грн
3+ 370.31 грн
7+ 349.74 грн
IXFH120N20P IXFH(K)120N20P.pdf
IXFH120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 100ns
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+841.9 грн
2+ 561.85 грн
3+ 561.14 грн
5+ 530.64 грн
IXFK170N20P IXF_170N20P.pdf
IXFK170N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
IXFX170N20P IXF_170N20P.pdf
IXFX170N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 185nC
Polarisation: unipolar
Drain current: 170A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 14mΩ
товар відсутній
IXTQ120N20P IXTK120N20P-DTE.pdf
IXTQ120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Kind of package: tube
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 180ns
Drain-source voltage: 200V
Drain current: 120A
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+721.2 грн
2+ 538.44 грн
VUE22-06NO7 VUE22-06NO7.pdf
VUE22-06NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.09V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1062.69 грн
VUE22-12NO7 VUE22-12NO7.pdf
VUE22-12NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 24A; Ifsm: 40A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 24A
Max. forward impulse current: 40A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.92V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1106.24 грн
3+ 971.18 грн
IXFN40N90P IXFN40N90P.pdf
IXFN40N90P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 33A; SOT227B; screw; Idm: 80A; 695W
Type of module: MOSFET transistor
Gate charge: 230nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 33A
Kind of channel: enhanced
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.23Ω
Reverse recovery time: 300ns
Pulsed drain current: 80A
Power dissipation: 695W
товар відсутній
DSS2X121-0045B description DSS2x121-0045B.pdf
DSS2X121-0045B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Case: SOT227B
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.6kA
товар відсутній
IXGH25N160 IXGH(T)25N160.pdf
IXGH25N160
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
товар відсутній
IXFH40N85X IXF_40N85X_HV.pdf
IXFH40N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
IXFT40N85XHV IXFT40N85X.PDF
IXFT40N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
товар відсутній
MMIX1F44N100Q3 littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf
MMIX1F44N100Q3
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Mounting: SMD
Reverse recovery time: 300ns
Case: SMPD
Power dissipation: 694W
Technology: HiPerFET™; Q3-Class
Pulsed drain current: 110A
Gate charge: 264nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 245mΩ
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+3119.32 грн
XS170S XS170.pdf
XS170S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 249 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+266.63 грн
8+ 112.09 грн
21+ 106.41 грн
Мінімальне замовлення: 2
XS170STR XS170.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
DSEP2X61-12A description DSEP2x61-12A.pdf
DSEP2X61-12A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 800A
Max. forward voltage: 2.42V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 60A x2
Type of module: diode
Semiconductor structure: double independent
товар відсутній
MCD501-16IO2 m501-12io2-18io2.pdf
MCD501-16IO2
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 503A; ComPack; Ifsm: 14.5kA; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 503A
Case: ComPack
Max. forward impulse current: 14.5kA
Electrical mounting: screw
Max. load current: 1195A
Threshold on-voltage: 0.85V
Kind of package: bulk
Mechanical mounting: screw
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+14667.62 грн
MCD501-18IO2 m501-12io2-18io2.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 503A; ComPack; Ifsm: 14.5kA; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 503A
Case: ComPack
Max. forward impulse current: 14.5kA
Electrical mounting: screw
Max. load current: 1195A
Threshold on-voltage: 0.85V
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCD44-12io8B MCD44-12io8B.pdf
MCD44-12io8B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Max. load current: 77A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
Threshold on-voltage: 0.85V
товар відсутній
MDD44-12N1B MDD44-12N1B-DTE.pdf
MDD44-12N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
товар відсутній
IXTP10P15T IXT_10P15T.pdf
IXTP10P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+144.72 грн
7+ 131.24 грн
18+ 123.44 грн
Мінімальне замовлення: 3
IXTP10P50P IXT_10P50P.pdf
IXTP10P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
товар відсутній
IXTA52P10P IXT_52P10P.pdf
IXTA52P10P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
на замовлення 308 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+427.06 грн
3+ 356.83 грн
4+ 274.54 грн
9+ 259.64 грн
IXTH52P10P IXT_52P10P.pdf
IXTH52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+502.7 грн
3+ 331.29 грн
7+ 313.56 грн
IXTP52P10P IXT_52P10P.pdf
IXTP52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO220AB
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
товар відсутній
IXTQ52P10P IXT_52P10P.pdf
IXTQ52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
товар відсутній
IXTN170P10P IXTN170P10P.pdf
IXTN170P10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -510A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Power dissipation: 890W
Polarisation: unipolar
товар відсутній
IXTR170P10P IXTR170P10P.pdf
IXTR170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -100A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 312W
Polarisation: unipolar
товар відсутній
IXTX170P10P IXTX170P10P.pdf
IXTX170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Kind of package: tube
Gate charge: 240nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -170A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1119.99 грн
3+ 983.24 грн
PLB190 PLB190.pdf
PLB190
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+547.01 грн
4+ 244.04 грн
10+ 230.56 грн
PLB190S PLB190.pdf
PLB190S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+547.01 грн
4+ 244.04 грн
10+ 230.56 грн
PLB190STR PLB190.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
товар відсутній
MIXA20W1200TML MIXA20W1200TML.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: fans; for pump; motors
Case: E1-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 45A
Power dissipation: 100W
товар відсутній
MIXA30W1200TML MIXA30W1200TML.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: fans; for pump; motors
Case: E1-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 150W
товар відсутній
MIXA40W1200TML MIXA40W1200TML.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: fans; for pump; motors
Case: E1-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 105A
Power dissipation: 195W
товар відсутній
MIXA80W1200PTEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 84A
товар відсутній
MIXG70W1200TED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E2-Pack
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 79A
товар відсутній
VUB120-16NOXT VUB120-16NOX.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: V2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
товар відсутній
MCC162-16io1 MCC162-16IO1.pdf
MCC162-16io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC162-16IO1B media?resourcetype=datasheets&amp;itemid=39564359-d67a-4cc3-b2ec-a1b9c4f6f8d0&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc162-14io1b_mcc162-16io1b_mcc162-18io1b_mcd162-16io1b%2520datasheet.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
IXTA1N120P IXTY(A,P)1N120P.pdf
IXTA1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO263
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
IXTP1N120P IXTY(A,P)1N120P.pdf
IXTP1N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
IXTY1N120P IXTY(A,P)1N120P.pdf
IXTY1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
на замовлення 128 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+186.41 грн
5+ 155.36 грн
7+ 131.24 грн
18+ 123.44 грн
Мінімальне замовлення: 3
IXTP02N120P IXTP(Y)02N120P.pdf
IXTP02N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO220AB
On-state resistance: 75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
товар відсутній
IXTY02N120P IXTP(Y)02N120P.pdf
IXTY02N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
товар відсутній
IXTA3N50D2 IXTA(P)3N50D2.pdf
IXTA3N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
товар відсутній
IXFA30N25X3 IXFA(P,Y)30N25X3.pdf
IXFA30N25X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
товар відсутній
IXFA36N30P3 IXFA(P)36N30P3.pdf
IXFA36N30P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO263; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 347W
Case: TO263
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
товар відсутній
IXFA60N25X3 IXFA(P,Q)60N25X3.pdf
IXFA60N25X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO263
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+399.56 грн
3+ 333.42 грн
7+ 316.4 грн
10+ 311.43 грн
50+ 304.34 грн
IXFA76N15T2 IXFA(H,P)76N15T2.pdf
IXFA76N15T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO263; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+274.27 грн
3+ 229.14 грн
4+ 218.5 грн
10+ 213.53 грн
11+ 206.44 грн
Мінімальне замовлення: 2
IXFA80N25X3 IXFA80N25X3.pdf
IXFA80N25X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO263
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 120ns
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+550.06 грн
3+ 386.63 грн
6+ 365.35 грн
IXTA32N20T IXTA(P)32N20T.pdf
IXTA32N20T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
товар відсутній
IXFA230N075T2 IXFA(P)230N075T2.pdf
IXFA230N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+417.13 грн
3+ 348.32 грн
4+ 263.9 грн
9+ 249 грн
IXFA230N075T2-7 IXFA230N075T2-7.pdf
IXFA230N075T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+344.55 грн
3+ 273.83 грн
9+ 258.93 грн
Мінімальне замовлення: 2
IXTA120N075T2 IXTA(P)120N075T2.pdf
IXTA120N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
On-state resistance: 7.7mΩ
Kind of package: tube
Power dissipation: 250W
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Reverse recovery time: 50ns
Kind of channel: enhanced
Drain current: 120A
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+229.96 грн
3+ 192.25 грн
6+ 153.94 грн
15+ 145.43 грн
Мінімальне замовлення: 2
VUE30-20NO1 VUE30-20NO1.pdf
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 30A; Ifsm: 75A; screw
Type of bridge rectifier: three-phase
Max. off-state voltage: 2kV
Load current: 30A
Max. forward impulse current: 75A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 5.41V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Technology: FRED
товар відсутній
VUE35-06NO7 VUE35-06NO7.pdf
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 56A; Ifsm: 110A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 56A
Max. forward impulse current: 110A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.01V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
товар відсутній
FMM22-05PF
FMM22-05PF
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Type of transistor: N-MOSFET x2
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 55A
Power dissipation: 132W
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
Reverse recovery time: 200ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1232.3 грн
2+ 1081.85 грн
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