| Фото | Назва | Виробник | Інформація |
Доступність |
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IXTA32N20T | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 32A Power dissipation: 200W Case: TO263 On-state resistance: 78mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 110ns |
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IXFA230N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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IXFA230N075T2-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263-7 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXTA120N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 250W Case: TO263 On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 50ns |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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| VUE30-20NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 30A; Ifsm: 75A; screw Type of bridge rectifier: three-phase Max. off-state voltage: 2kV Load current: 30A Max. forward impulse current: 75A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 5.41V Leads: connectors 2,0x0,5mm Case: V1-A-Pack Mechanical mounting: screw Technology: FRED |
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| VUE35-06NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 600V; If: 56A; Ifsm: 110A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 56A Max. forward impulse current: 110A Electrical mounting: THT Version: module Max. forward voltage: 2.01V Case: ECO-PAC 1 Mechanical mounting: screw Technology: FRED |
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FMM22-05PF | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A Type of transistor: N-MOSFET x2 Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 55A Power dissipation: 132W Case: ISOPLUS i4-pac™ x024a Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Semiconductor structure: double series Reverse recovery time: 200ns |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IXTA10P50P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 414ns |
на замовлення 287 шт: термін постачання 21-30 дні (днів) |
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DSEP12-12B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 2.06V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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| DSEP12-12BZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263ABHV Max. forward voltage: 2.06V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube |
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DSB60C30HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; 130W; TO247-3; tube Case: TO247-3 Mounting: THT Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.47V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 570A Power dissipation: 130W Kind of package: tube |
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DSB60C45HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 130W; TO247-3; tube Case: TO247-3 Mounting: THT Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward voltage: 0.58V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 570A Power dissipation: 130W Kind of package: tube |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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DSB60C60HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 130W; TO247-3; tube Case: TO247-3 Mounting: THT Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward voltage: 0.67V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 570A Power dissipation: 130W Kind of package: tube |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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LOC111 | IXYS |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: photodiode Insulation voltage: 3.75kV Case: DIP8 |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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LOC111S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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LOC111STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
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| LIA135 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
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| LIA135S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
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| LIA135STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
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| LIA136 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
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| LIA136S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
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| LIA136STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
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| MDMA425P1600PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA Max. off-state voltage: 1.6kV Load current: 425A Semiconductor structure: double series Max. forward impulse current: 10kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: diode Case: SimBus F |
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IXTQ34N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 40W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXTQ48N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Pulsed drain current: 70A Power dissipation: 70W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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| DSEP29-06AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: D2PAK Max. forward voltage: 1.26V Max. forward impulse current: 250A Power dissipation: 165W Technology: HiPerFRED™ Kind of package: tube |
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| MWI25-12A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 35A Pulsed collector current: 70A Application: motors Power dissipation: 225W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT three-phase bridge; NTC thermistor Case: E2-Pack |
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IXTP01N100D | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Gate charge: 0.1µC Kind of channel: depleted Mounting: THT Case: TO220AB Reverse recovery time: 2ns Drain-source voltage: 1kV Drain current: 0.1A On-state resistance: 80Ω |
на замовлення 348 шт: термін постачання 21-30 дні (днів) |
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IXTU01N100 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251 Mounting: THT Power dissipation: 25W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.1A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO251 On-state resistance: 80Ω |
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IXTY01N100 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Mounting: SMD Power dissipation: 25W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.1A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω |
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IXTY01N100D | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns Mounting: SMD Power dissipation: 25W Gate charge: 0.1µC Polarisation: unipolar Drain current: 0.1A Kind of channel: depleted Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω Reverse recovery time: 2ns |
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DSEP60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 Max. forward voltage: 1.81V Power dissipation: 330W Reverse recovery time: 40ns Technology: HiPerFRED™ |
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DSEP60-12AR | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: ISOPLUS247™ Max. forward voltage: 2.66V Power dissipation: 230W Reverse recovery time: 40ns Technology: HiPerFRED™ |
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| MWI150-12T8T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Application: motors; photovoltaics Power dissipation: 690W Mechanical mounting: screw Pulsed collector current: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 150A Topology: IGBT three-phase bridge; NTC thermistor |
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IXTA3N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 70W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 9.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXTY3N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 70W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 9.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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LBA120P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LBA120PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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IXTP6N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Power dissipation: 300W Case: TO220AB On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 41ns |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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| CLA15E1200NPZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 33A Load current: 15A Gate current: 20/40mA Case: TO263ABHV Mounting: SMD Kind of package: tube Max. forward impulse current: 145A Features of semiconductor devices: two gate polarities |
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IXFH150N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Pulsed drain current: 300A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| IXFT150N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Pulsed drain current: 300A Power dissipation: 735W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 154nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 140ns |
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| IXTX4N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns Reverse recovery time: 420ns Drain-source voltage: 3kV Drain current: 4A Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 139nC Technology: Polar3™ Kind of channel: enhanced Mounting: THT Case: TO247PLUS-HV |
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| IXBOD2-50R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV Type of thyristor: BOD x4 Max. load current: 0.9A Case: BOD Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 5kV |
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IXTR140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -110A Power dissipation: 270W Case: ISOPLUS247™ Gate-source voltage: ±15V On-state resistance: 11mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
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IXBOD2-56R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV Type of thyristor: BOD x4 Max. load current: 0.9A Case: BOD Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 5.6kV |
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IXBOD2-14 | IXYS |
Category: Thyristors - others Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 1.4kV |
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| MIXG450PF1700TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SimBus F Type of module: IGBT Technology: X2PT Collector current: 435A Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV |
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IXKH70N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 70A Power dissipation: 625W Case: TO247-3 On-state resistance: 45mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
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| MCMA1400E1600CD | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 1.1kA Case: ComPack Max. forward voltage: 1.43V Gate current: 600/800mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MDMA1400C1600CC | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 700A x2 Type of module: diode Semiconductor structure: common cathode; double Case: ComPack Max. forward impulse current: 20kA Max. forward voltage: 1.05V Mechanical mounting: screw |
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| MDMA60B800MB | IXYS |
Category: Diode modules Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw Type of module: diode Electrical mounting: THT Mechanical mounting: screw Case: ECO-PAC 1 Max. off-state voltage: 0.8kV Load current: 60A |
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LDA203 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; 3.75kV; DIP8 Mounting: THT Kind of output: transistor Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Case: DIP8 Turn-off time: 20µs Number of channels: 2 CTR@If: 33-1000%@1mA |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IXFY30N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO252 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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IXFK360N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264 Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1670W Polarisation: unipolar Drain current: 360A Reverse recovery time: 150ns Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4mΩ Drain-source voltage: 150V |
товар відсутній |
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DSP25-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W Mounting: THT Kind of package: tube Load current: 25A Semiconductor structure: double series Max. forward impulse current: 300A Power dissipation: 160W Type of diode: rectifying Case: TO247-3 Max. off-state voltage: 1.6kV Max. forward voltage: 1.23V |
на замовлення 177 шт: термін постачання 21-30 дні (днів) |
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DSP25-16AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Mounting: SMD Load current: 25A Semiconductor structure: double series Max. forward impulse current: 300A Power dissipation: 160W Type of diode: rectifying Case: D3PAK Max. off-state voltage: 1.6kV Max. forward voltage: 1.16V |
товар відсутній |
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MEK300-06DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Type of module: diode Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw Case: Y4-M6 Max. off-state voltage: 0.6kV Max. forward voltage: 1.19V Load current: 304A Semiconductor structure: common cathode |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXFK300N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264 Mounting: THT Drain-source voltage: 200V Drain current: 300A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 375nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 Reverse recovery time: 170ns |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXXK300N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1.14kA Turn-on time: 137ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 460nC Technology: GenX3™; Planar; XPT™ Case: TO264 |
товар відсутній |
| IXTA32N20T |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
товар відсутній
| IXFA230N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 426.86 грн |
| 3+ | 356.44 грн |
| 4+ | 270.05 грн |
| 9+ | 254.81 грн |
| IXFA230N075T2-7 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 352.59 грн |
| 3+ | 280.22 грн |
| 9+ | 264.97 грн |
| IXTA120N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 235.32 грн |
| 3+ | 196.73 грн |
| 6+ | 158.98 грн |
| 15+ | 150.27 грн |
| VUE30-20NO1 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 30A; Ifsm: 75A; screw
Type of bridge rectifier: three-phase
Max. off-state voltage: 2kV
Load current: 30A
Max. forward impulse current: 75A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 5.41V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 30A; Ifsm: 75A; screw
Type of bridge rectifier: three-phase
Max. off-state voltage: 2kV
Load current: 30A
Max. forward impulse current: 75A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 5.41V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Technology: FRED
товар відсутній
| VUE35-06NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 56A; Ifsm: 110A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 56A
Max. forward impulse current: 110A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.01V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 56A; Ifsm: 110A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 56A
Max. forward impulse current: 110A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.01V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
товар відсутній
| FMM22-05PF |
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Type of transistor: N-MOSFET x2
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 55A
Power dissipation: 132W
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
Reverse recovery time: 200ns
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Type of transistor: N-MOSFET x2
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 55A
Power dissipation: 132W
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
Reverse recovery time: 200ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1261.03 грн |
| 2+ | 1107.08 грн |
| IXTA10P50P |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
на замовлення 287 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 437.02 грн |
| 3+ | 365.15 грн |
| 4+ | 278.04 грн |
| 9+ | 262.79 грн |
| DSEP12-12B |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.06V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.06V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
на замовлення 96 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.14 грн |
| 9+ | 93.65 грн |
| 25+ | 88.57 грн |
| DSEP12-12BZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.06V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.06V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
товар відсутній
| DSB60C30HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; 130W; TO247-3; tube
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; 130W; TO247-3; tube
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
товар відсутній
| DSB60C45HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 130W; TO247-3; tube
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.58V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 130W; TO247-3; tube
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.58V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
на замовлення 101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.36 грн |
| 3+ | 201.81 грн |
| 6+ | 161.89 грн |
| 15+ | 153.18 грн |
| DSB60C60HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 130W; TO247-3; tube
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.67V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 130W; TO247-3; tube
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.67V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.36 грн |
| 3+ | 201.81 грн |
| 6+ | 161.89 грн |
| 15+ | 153.18 грн |
| LOC111 |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.41 грн |
| 8+ | 117.85 грн |
| 10+ | 115.43 грн |
| 20+ | 111.42 грн |
| 50+ | 108.17 грн |
| LOC111S |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.81 грн |
| 3+ | 173.5 грн |
| 7+ | 123.41 грн |
| LOC111STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
| LIA135 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| LIA135S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| LIA135STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| LIA136 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| LIA136S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| LIA136STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| MDMA425P1600PTSF |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
товар відсутній
| IXTQ34N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 631.69 грн |
| 2+ | 418.87 грн |
| 6+ | 395.64 грн |
| IXTQ48N65X2M |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 772.41 грн |
| 2+ | 509.62 грн |
| 3+ | 508.89 грн |
| 5+ | 481.31 грн |
| DSEP29-06AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
товар відсутній
| MWI25-12A7T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Application: motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Case: E2-Pack
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Application: motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Case: E2-Pack
товар відсутній
| IXTP01N100D |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depleted
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depleted
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
на замовлення 348 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 472.2 грн |
| 3+ | 315.06 грн |
| 8+ | 298.37 грн |
| IXTU01N100 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251
Mounting: THT
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO251
On-state resistance: 80Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251
Mounting: THT
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO251
On-state resistance: 80Ω
товар відсутній
| IXTY01N100 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
товар відсутній
| IXTY01N100D |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Mounting: SMD
Power dissipation: 25W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 0.1A
Kind of channel: depleted
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Reverse recovery time: 2ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Mounting: SMD
Power dissipation: 25W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 0.1A
Kind of channel: depleted
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Reverse recovery time: 2ns
товар відсутній
| DSEP60-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
товар відсутній
| DSEP60-12AR | |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
товар відсутній
| MWI150-12T8T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Application: motors; photovoltaics
Power dissipation: 690W
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Application: motors; photovoltaics
Power dissipation: 690W
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
товар відсутній
| IXTA3N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.6 грн |
| IXTY3N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
на замовлення 104 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 43.78 грн |
| 11+ | 35.93 грн |
| LBA120P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 641.85 грн |
| 4+ | 271.51 грн |
| 9+ | 256.26 грн |
| LBA120PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| IXTP6N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 631.69 грн |
| 2+ | 421.78 грн |
| 3+ | 421.05 грн |
| 6+ | 398.55 грн |
| CLA15E1200NPZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 15A
Gate current: 20/40mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 145A
Features of semiconductor devices: two gate polarities
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 15A
Gate current: 20/40mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 145A
Features of semiconductor devices: two gate polarities
товар відсутній
| IXFH150N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1069.49 грн |
| 2+ | 800.72 грн |
| 3+ | 756.44 грн |
| IXFT150N25X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 140ns
товар відсутній
| IXTX4N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Reverse recovery time: 420ns
Drain-source voltage: 3kV
Drain current: 4A
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 139nC
Technology: Polar3™
Kind of channel: enhanced
Mounting: THT
Case: TO247PLUS-HV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Reverse recovery time: 420ns
Drain-source voltage: 3kV
Drain current: 4A
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 139nC
Technology: Polar3™
Kind of channel: enhanced
Mounting: THT
Case: TO247PLUS-HV
товар відсутній
| IXBOD2-50R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5kV
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5kV
товар відсутній
| IXTR140P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
товар відсутній
| IXBOD2-56R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5.6kV
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5.6kV
товар відсутній
| IXBOD2-14 |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.4kV
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.4kV
товар відсутній
| MIXG450PF1700TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
товар відсутній
| IXKH70N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
| MCMA1400E1600CD |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Gate current: 600/800mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Gate current: 600/800mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MDMA1400C1600CC |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 700A x2
Type of module: diode
Semiconductor structure: common cathode; double
Case: ComPack
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 700A x2
Type of module: diode
Semiconductor structure: common cathode; double
Case: ComPack
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Mechanical mounting: screw
товар відсутній
| MDMA60B800MB |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Type of module: diode
Electrical mounting: THT
Mechanical mounting: screw
Case: ECO-PAC 1
Max. off-state voltage: 0.8kV
Load current: 60A
Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Type of module: diode
Electrical mounting: THT
Mechanical mounting: screw
Case: ECO-PAC 1
Max. off-state voltage: 0.8kV
Load current: 60A
товар відсутній
| LDA203 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; 3.75kV; DIP8
Mounting: THT
Kind of output: transistor
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Case: DIP8
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; 3.75kV; DIP8
Mounting: THT
Kind of output: transistor
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Case: DIP8
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.67 грн |
| IXFY30N25X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 383.86 грн |
| 4+ | 274.41 грн |
| 9+ | 259.89 грн |
| IXFK360N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Drain current: 360A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Drain current: 360A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain-source voltage: 150V
товар відсутній
| DSP25-16A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Kind of package: tube
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Kind of package: tube
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
на замовлення 177 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 366.66 грн |
| 3+ | 306.35 грн |
| 4+ | 243.92 грн |
| 10+ | 230.85 грн |
| DSP25-16AT-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: D3PAK
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: D3PAK
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
товар відсутній
| MEK300-06DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of module: diode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Case: Y4-M6
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of module: diode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Case: Y4-M6
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4795.52 грн |
| IXFK300N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 300A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 170ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 300A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 170ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1867.7 грн |
| 2+ | 1639.92 грн |
| IXXK300N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
Case: TO264
товар відсутній