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CMA50E1600HB IXYS CMA50E1600HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.6kV
Max. forward impulse current: 595A
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Type of thyristor: thyristor
товар відсутній
CMA50E1600QB IXYS CMA50E1600QB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Mounting: THT
Case: TO3P
Kind of package: tube
Gate current: 80mA
Load current: 50A
Max. load current: 79A
Max. off-state voltage: 1.6kV
Type of thyristor: thyristor
Max. forward impulse current: 595A
товар відсутній
IXTR120P20T IXTR120P20T IXYS IXTR120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 595W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
CMA20E1600PB CMA20E1600PB IXYS CMA20E1600PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO220AB
Type of thyristor: thyristor
товар відсутній
CMA20E1600PZ-TUB IXYS CMA20E1600PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 28/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO263ABHV
Type of thyristor: thyristor
товар відсутній
IXTH1N170DHV IXTH1N170DHV IXYS IXTA(H)1N170DHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
товар відсутній
IXTH2N170D2 IXTH2N170D2 IXYS IXTH(T)2N170D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO247-3
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
товар відсутній
MMO140-12IO7 IXYS MMO140,%20MLO140.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Type of module: thyristor
Case: ECO-PAC 1
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Load current: 58A
Semiconductor structure: opposing
товар відсутній
MMO140-16IO7 IXYS MMO140,%20MLO140.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Type of module: thyristor
Case: ECO-PAC 1
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.75V
Load current: 58A
Semiconductor structure: opposing
товар відсутній
MEK600-04DA IXYS L581.pdf Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Electrical mounting: screw
Load current: 600A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 3kA
Max. forward voltage: 1.2V
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
товар відсутній
IXFK102N30P IXFK102N30P IXYS IXFK102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Power dissipation: 700W
Case: TO264
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+1121.09 грн
2+ 737.57 грн
4+ 697.64 грн
IXTA18P10T IXTA18P10T IXYS IXT_18P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
товар відсутній
IXTP18P10T IXTP18P10T IXYS IXT_18P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
4+99.46 грн
10+ 90.02 грн
26+ 84.94 грн
50+ 84.21 грн
Мінімальне замовлення: 4
DSA20C100PN DSA20C100PN IXYS DSA20C100PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; 35W; TO220FP; tube
Kind of package: tube
Max. off-state voltage: 100V
Max. forward voltage: 0.71V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 240A
Power dissipation: 35W
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
5+79.13 грн
10+ 70.42 грн
14+ 63.88 грн
37+ 60.25 грн
Мінімальне замовлення: 5
IXFX220N17T2 IXFX220N17T2 IXYS IXFK(X)220N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+876.39 грн
2+ 671.5 грн
4+ 635.21 грн
IXFX320N17T2 IXFX320N17T2 IXYS IXFK(X)320N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™
Case: PLUS247™
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Power dissipation: 1670W
Gate charge: 640nC
Polarisation: unipolar
Drain current: 320A
Kind of channel: enhanced
Drain-source voltage: 170V
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
товар відсутній
IXFK200N10P IXFK200N10P IXYS IXFK(X)200N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFB60N80P IXFB60N80P IXYS IXFB60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
IXFK170N20T IXFK170N20T IXYS IXFK(X)170N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFK170N25X3 IXFK170N25X3 IXYS IXFH(K,T)170N25X3_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
товар відсутній
CLE90UH1200TLB-TRR IXYS CLE90UH1200TLB.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD
Electrical mounting: SMT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Load current: 90A
Max. forward impulse current: 350A
Features of semiconductor devices: with thermistor (NTC)
Type of bridge rectifier: half-controlled
Case: SMPD
товар відсутній
CLE90UH1200TLB-TUB IXYS CLE90UH1200TLB.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD
Electrical mounting: SMT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Load current: 90A
Max. forward impulse current: 350A
Features of semiconductor devices: with thermistor (NTC)
Type of bridge rectifier: half-controlled
Case: SMPD
товар відсутній
CPC1302G CPC1302G IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Kind of output: Darlington
Case: DIP8
Mounting: THT
Number of channels: 2
CTR@If: 1000-8000%@1mA
на замовлення 395 шт:
термін постачання 21-30 дні (днів)
4+125.87 грн
5+ 116.15 грн
9+ 101.2 грн
24+ 95.69 грн
Мінімальне замовлення: 4
CPC1302GS CPC1302GS IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Kind of output: Darlington
Max. off-state voltage: 5V
Trigger current: 50mA
Mounting: SMD
Number of channels: 2
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 80µs
CTR@If: 1000-8000%@1mA
товар відсутній
CPC1302GSTR CPC1302GSTR IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Kind of output: Darlington
Max. off-state voltage: 5V
Trigger current: 50mA
Mounting: SMD
Number of channels: 2
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 80µs
CTR@If: 1000-8000%@1mA
на замовлення 764 шт:
термін постачання 21-30 дні (днів)
2+200.14 грн
5+ 158.26 грн
9+ 101.63 грн
23+ 96.55 грн
250+ 92.92 грн
Мінімальне замовлення: 2
VBE100-12NO7 IXYS VBE100-12NO7.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 100A; Ifsm: 415A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 100A
Max. forward impulse current: 415A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
товар відсутній
VUO22-12NO1 IXYS VUO22-12NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 22A; Ifsm: 100A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 22A
Max. forward impulse current: 100A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.12V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
товар відсутній
DPG30C200PC-TRL IXYS DPG30C200PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Technology: HiPerFRED™
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.51V
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 240A
Power dissipation: 90W
товар відсутній
DSA30C45PC DSA30C45PC IXYS DSA30C45PC.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; reel,tape; 85W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 340A
Power dissipation: 85W
на замовлення 698 шт:
термін постачання 21-30 дні (днів)
4+112.58 грн
5+ 91.47 грн
10+ 84.21 грн
11+ 79.13 грн
29+ 74.77 грн
Мінімальне замовлення: 4
IXTA26P10T IXTA26P10T IXYS IXT_26P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
товар відсутній
IXTP26P10T IXTP26P10T IXYS IXT_26P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
2+230.63 грн
3+ 193.1 грн
6+ 153.9 грн
15+ 145.19 грн
Мінімальне замовлення: 2
CPC1540GS CPC1540GS IXYS CPC1540.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
товар відсутній
IXFH160N15T2 IXFH160N15T2 IXYS IXFH160N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+545.69 грн
IXFH76N15T2 IXFH76N15T2 IXYS IXFA(H,P)76N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
1+447.97 грн
3+ 283.85 грн
9+ 267.88 грн
IXFH96N15P IXFH96N15P IXYS IXFH96N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 96A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+495.66 грн
3+ 313.61 грн
IXFK180N15P IXFK180N15P IXYS IXFK180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+920.95 грн
3+ 808.71 грн
IXFP102N15T IXFP102N15T IXYS IXFP102N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFP130N15X3 IXFP130N15X3 IXYS IXF_130N15X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+578.53 грн
IXFX180N15P IXFX180N15P IXYS IXFX180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1180.51 грн
2+ 747.73 грн
4+ 706.35 грн
IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
1+862.32 грн
2+ 644.64 грн
4+ 609.8 грн
10+ 609.07 грн
IXTH88N15 IXTH88N15 IXYS IXTH88N15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 150ns
товар відсутній
IXTP102N15T IXTP102N15T IXYS IXTA(H,P,Q)102N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
товар відсутній
IXTP130N15X4 IXTP130N15X4 IXYS IXTH(P)130N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+421.39 грн
3+ 280.22 грн
9+ 264.97 грн
IXFN300N10P IXFN300N10P IXYS IXFN300N10P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 295A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 279nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
IXFN300N20X3 IXFN300N20X3 IXYS IXFN300N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 172ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
DSEI8-06AS-TUB DSEI8-06AS-TUB IXYS DSEI8-06A_DSEI8-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO263AB
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.3V
Power dissipation: 50W
Technology: FRED
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
3+135.03 грн
9+ 99.46 грн
23+ 94.37 грн
Мінімальне замовлення: 3
IXTA08N120P IXTA08N120P IXYS IXT_08N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 900ns
товар відсутній
IXTP08N120P IXTP08N120P IXYS IXT_08N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 25Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
DSEI8-06A DSEI8-06A IXYS media?resourcetype=datasheets&itemid=e637c6ed-d932-4130-b9e4-8226a2821674&filename=Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50W; 35ns
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.3V
Power dissipation: 50W
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
4+105.26 грн
10+ 93.65 грн
11+ 79.13 грн
29+ 74.77 грн
Мінімальне замовлення: 4
MG17100S-BN4MM IXYS media?resourcetype=datasheets&itemid=d36b1b0c-5cf1-4465-a1e5-70b62c84a3c4&filename=littelfuse_power_semiconductor_igbt_module_mg17100s_bn4mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
MG1775S-BN4MM IXYS media?resourcetype=datasheets&itemid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d&filename=littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
VUI30-12N1 IXYS VUI30-12N1.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-phase PFC; Urmax: 1.2kV; Ic: 65A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase PFC
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: V1-A-Pack
Application: Inverter
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Technology: FRED; NPT
Mechanical mounting: screw
товар відсутній
IXTH32N65X IXTH32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
1+525.37 грн
3+ 332.49 грн
7+ 314.34 грн
IXTH52N65X IXTH52N65X IXYS IXTH52N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 435ns
товар відсутній
IXTH62N65X2 IXTH62N65X2 IXYS IXTH62N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 445ns
товар відсутній
IXFH26N65X2 IXFH26N65X2 IXYS media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFR32N80Q3 IXFR32N80Q3 IXYS IXFR32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.3Ω
Drain current: 24A
Drain-source voltage: 800V
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
IXFX32N80P IXFX32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
IXFX32N80Q3 IXFX32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
CMA50E1600HB CMA50E1600HB.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.6kV
Max. forward impulse current: 595A
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Type of thyristor: thyristor
товар відсутній
CMA50E1600QB CMA50E1600QB.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Mounting: THT
Case: TO3P
Kind of package: tube
Gate current: 80mA
Load current: 50A
Max. load current: 79A
Max. off-state voltage: 1.6kV
Type of thyristor: thyristor
Max. forward impulse current: 595A
товар відсутній
IXTR120P20T IXTR120P20T.pdf
IXTR120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 595W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
CMA20E1600PB CMA20E1600PB.pdf
CMA20E1600PB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO220AB
Type of thyristor: thyristor
товар відсутній
CMA20E1600PZ-TUB CMA20E1600PZ.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 28/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO263ABHV
Type of thyristor: thyristor
товар відсутній
IXTH1N170DHV IXTA(H)1N170DHV.pdf
IXTH1N170DHV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
товар відсутній
IXTH2N170D2 IXTH(T)2N170D2.pdf
IXTH2N170D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO247-3
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
товар відсутній
MMO140-12IO7 MMO140,%20MLO140.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Type of module: thyristor
Case: ECO-PAC 1
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Load current: 58A
Semiconductor structure: opposing
товар відсутній
MMO140-16IO7 MMO140,%20MLO140.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Type of module: thyristor
Case: ECO-PAC 1
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.75V
Load current: 58A
Semiconductor structure: opposing
товар відсутній
MEK600-04DA L581.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Electrical mounting: screw
Load current: 600A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 3kA
Max. forward voltage: 1.2V
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
товар відсутній
IXFK102N30P IXFK102N30P.pdf
IXFK102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Power dissipation: 700W
Case: TO264
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1121.09 грн
2+ 737.57 грн
4+ 697.64 грн
IXTA18P10T IXT_18P10T.pdf
IXTA18P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
товар відсутній
IXTP18P10T IXT_18P10T.pdf
IXTP18P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+99.46 грн
10+ 90.02 грн
26+ 84.94 грн
50+ 84.21 грн
Мінімальне замовлення: 4
DSA20C100PN DSA20C100PN.pdf
DSA20C100PN
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; 35W; TO220FP; tube
Kind of package: tube
Max. off-state voltage: 100V
Max. forward voltage: 0.71V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 240A
Power dissipation: 35W
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+79.13 грн
10+ 70.42 грн
14+ 63.88 грн
37+ 60.25 грн
Мінімальне замовлення: 5
IXFX220N17T2 IXFK(X)220N17T2.pdf
IXFX220N17T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+876.39 грн
2+ 671.5 грн
4+ 635.21 грн
IXFX320N17T2 IXFK(X)320N17T2.pdf
IXFX320N17T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™
Case: PLUS247™
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Power dissipation: 1670W
Gate charge: 640nC
Polarisation: unipolar
Drain current: 320A
Kind of channel: enhanced
Drain-source voltage: 170V
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
товар відсутній
IXFK200N10P IXFK(X)200N10P.pdf
IXFK200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFB60N80P IXFB60N80P.pdf
IXFB60N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
IXFK170N20T IXFK(X)170N20T.pdf
IXFK170N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFK170N25X3 IXFH(K,T)170N25X3_HV.pdf
IXFK170N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
товар відсутній
CLE90UH1200TLB-TRR CLE90UH1200TLB.pdf
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD
Electrical mounting: SMT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Load current: 90A
Max. forward impulse current: 350A
Features of semiconductor devices: with thermistor (NTC)
Type of bridge rectifier: half-controlled
Case: SMPD
товар відсутній
CLE90UH1200TLB-TUB CLE90UH1200TLB.pdf
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD
Electrical mounting: SMT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Load current: 90A
Max. forward impulse current: 350A
Features of semiconductor devices: with thermistor (NTC)
Type of bridge rectifier: half-controlled
Case: SMPD
товар відсутній
CPC1302G CPC1302.pdf
CPC1302G
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Kind of output: Darlington
Case: DIP8
Mounting: THT
Number of channels: 2
CTR@If: 1000-8000%@1mA
на замовлення 395 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+125.87 грн
5+ 116.15 грн
9+ 101.2 грн
24+ 95.69 грн
Мінімальне замовлення: 4
CPC1302GS CPC1302.pdf
CPC1302GS
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Kind of output: Darlington
Max. off-state voltage: 5V
Trigger current: 50mA
Mounting: SMD
Number of channels: 2
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 80µs
CTR@If: 1000-8000%@1mA
товар відсутній
CPC1302GSTR CPC1302.pdf
CPC1302GSTR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Kind of output: Darlington
Max. off-state voltage: 5V
Trigger current: 50mA
Mounting: SMD
Number of channels: 2
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 80µs
CTR@If: 1000-8000%@1mA
на замовлення 764 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+200.14 грн
5+ 158.26 грн
9+ 101.63 грн
23+ 96.55 грн
250+ 92.92 грн
Мінімальне замовлення: 2
VBE100-12NO7 VBE100-12NO7.pdf
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 100A; Ifsm: 415A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 100A
Max. forward impulse current: 415A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
товар відсутній
VUO22-12NO1 VUO22-12NO1.pdf
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 22A; Ifsm: 100A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 22A
Max. forward impulse current: 100A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.12V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
товар відсутній
DPG30C200PC-TRL DPG30C200PC.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Technology: HiPerFRED™
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.51V
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 240A
Power dissipation: 90W
товар відсутній
DSA30C45PC DSA30C45PC.pdf
DSA30C45PC
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; reel,tape; 85W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 340A
Power dissipation: 85W
на замовлення 698 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+112.58 грн
5+ 91.47 грн
10+ 84.21 грн
11+ 79.13 грн
29+ 74.77 грн
Мінімальне замовлення: 4
IXTA26P10T IXT_26P10T.pdf
IXTA26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
товар відсутній
IXTP26P10T IXT_26P10T.pdf
IXTP26P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+230.63 грн
3+ 193.1 грн
6+ 153.9 грн
15+ 145.19 грн
Мінімальне замовлення: 2
CPC1540GS CPC1540.pdf
CPC1540GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
товар відсутній
IXFH160N15T2 IXFH160N15T2.pdf
IXFH160N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+545.69 грн
IXFH76N15T2 IXFA(H,P)76N15T2.pdf
IXFH76N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+447.97 грн
3+ 283.85 грн
9+ 267.88 грн
IXFH96N15P IXFH96N15P.pdf
IXFH96N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 96A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+495.66 грн
3+ 313.61 грн
IXFK180N15P IXFK180N15P.pdf
IXFK180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+920.95 грн
3+ 808.71 грн
IXFP102N15T IXFP102N15T.pdf
IXFP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFP130N15X3 IXF_130N15X3.pdf
IXFP130N15X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+578.53 грн
IXFX180N15P IXFX180N15P.pdf
IXFX180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1180.51 грн
2+ 747.73 грн
4+ 706.35 грн
IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+862.32 грн
2+ 644.64 грн
4+ 609.8 грн
10+ 609.07 грн
IXTH88N15 IXTH88N15.pdf
IXTH88N15
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 150ns
товар відсутній
IXTP102N15T IXTA(H,P,Q)102N15T.pdf
IXTP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
товар відсутній
IXTP130N15X4 IXTH(P)130N15X4.pdf
IXTP130N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+421.39 грн
3+ 280.22 грн
9+ 264.97 грн
IXFN300N10P IXFN300N10P.pdf
IXFN300N10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 295A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 279nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
IXFN300N20X3 IXFN300N20X3.pdf 200VProductBrief.pdf
IXFN300N20X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 172ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
DSEI8-06AS-TUB DSEI8-06A_DSEI8-06AS.pdf
DSEI8-06AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO263AB
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.3V
Power dissipation: 50W
Technology: FRED
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+135.03 грн
9+ 99.46 грн
23+ 94.37 грн
Мінімальне замовлення: 3
IXTA08N120P IXT_08N120P.pdf
IXTA08N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 900ns
товар відсутній
IXTP08N120P IXT_08N120P.pdf
IXTP08N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 25Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
DSEI8-06A media?resourcetype=datasheets&itemid=e637c6ed-d932-4130-b9e4-8226a2821674&filename=Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet
DSEI8-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50W; 35ns
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.3V
Power dissipation: 50W
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+105.26 грн
10+ 93.65 грн
11+ 79.13 грн
29+ 74.77 грн
Мінімальне замовлення: 4
MG17100S-BN4MM media?resourcetype=datasheets&itemid=d36b1b0c-5cf1-4465-a1e5-70b62c84a3c4&filename=littelfuse_power_semiconductor_igbt_module_mg17100s_bn4mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
MG1775S-BN4MM media?resourcetype=datasheets&itemid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d&filename=littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
VUI30-12N1 VUI30-12N1.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-phase PFC; Urmax: 1.2kV; Ic: 65A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase PFC
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: V1-A-Pack
Application: Inverter
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Technology: FRED; NPT
Mechanical mounting: screw
товар відсутній
IXTH32N65X IXTH(P,Q)32N65X.pdf
IXTH32N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+525.37 грн
3+ 332.49 грн
7+ 314.34 грн
IXTH52N65X IXTH52N65X.pdf
IXTH52N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 435ns
товар відсутній
IXTH62N65X2 IXTH62N65X2.pdf
IXTH62N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 445ns
товар відсутній
IXFH26N65X2 media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf
IXFH26N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFR32N80Q3 IXFR32N80Q3.pdf
IXFR32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.3Ω
Drain current: 24A
Drain-source voltage: 800V
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
IXFX32N80P IXFK(X)32N80P.pdf
IXFX32N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
IXFX32N80Q3 IXFK(X)32N80Q3.pdf
IXFX32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
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