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CPC1593G CPC1593G IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: THT
Operating temperature: -40...85°C
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 2ms
товар відсутній
CPC1593GS CPC1593GS IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 2ms
товар відсутній
CLA60MT1200NHB CLA60MT1200NHB IXYS CLA60MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 30A
Gate current: 60/80mA
Max. forward impulse current: 325A
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
1+493.53 грн
3+ 346.9 грн
7+ 327.75 грн
CLA60MT1200NHR CLA60MT1200NHR IXYS CLA60MT1200NHR.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: ISO247™
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 30A
Gate current: 60/80mA
Max. forward impulse current: 325A
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+517.21 грн
3+ 363.22 грн
7+ 343.35 грн
CLA80MT1200NHB CLA80MT1200NHB IXYS CLA80MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 40A
Gate current: 70/90mA
Max. forward impulse current: 440A
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+610.42 грн
2+ 429.19 грн
3+ 428.48 грн
6+ 405.78 грн
CLA80MT1200NHR CLA80MT1200NHR IXYS CLA80MT1200NHR.pdf Category: Triacs
Description: Triac; 1.2kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 440A
Mounting: THT
Case: ISO247™
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 40A
Gate current: 70/90mA
Max. forward impulse current: 440A
товар відсутній
IXFP14N85XM IXFP14N85XM IXYS IXFP14N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
2+381.23 грн
3+ 318.52 грн
4+ 249.71 грн
9+ 235.52 грн
Мінімальне замовлення: 2
IXFP30N25X3M IXFP30N25X3M IXYS IXFP30N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
товар відсутній
IXFP60N25X3M IXFP60N25X3M IXYS IXFP60N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+445.4 грн
3+ 331.29 грн
7+ 313.56 грн
IXFP8N85XM IXFP8N85XM IXYS IXFP8N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 8A; 33W; TO220FP; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 125ns
товар відсутній
IXTP230N04T4M IXTP230N04T4M IXYS IXTP230N04T4M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товар відсутній
IXTP32N65XM IXTP32N65XM IXYS IXTP32N65XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
товар відсутній
IXTY10P15T IXTY10P15T IXYS IXT_10P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTY15P15T IXTY15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
товар відсутній
IXTY18P10T IXTY18P10T IXYS IXT_18P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
2+213.91 грн
5+ 178.77 грн
6+ 147.56 грн
16+ 139.75 грн
Мінімальне замовлення: 2
IXTY26P10T IXTY26P10T IXYS IXT_26P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
2+230.72 грн
5+ 192.96 грн
6+ 146.14 грн
16+ 138.33 грн
Мінімальне замовлення: 2
IXTY32P05T IXTY32P05T IXYS IXT_32P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 26ns
товар відсутній
IXTN210P10T IXTN210P10T IXYS IXTN210P10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Case: SOT227B
Power dissipation: 830W
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: -800A
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+2895.48 грн
IXTR210P10T IXTR210P10T IXYS IXTR210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: ISOPLUS247™
Kind of package: tube
Power dissipation: 390W
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1848.06 грн
2+ 1622.42 грн
30+ 1560.7 грн
IXTX210P10T IXTX210P10T IXYS IXTX210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: PLUS247™
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1715.13 грн
2+ 1505.37 грн
DPG10I200PA DPG10I200PA IXYS media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
4+100.85 грн
5+ 84.42 грн
10+ 74.49 грн
13+ 67.39 грн
34+ 63.14 грн
Мінімальне замовлення: 4
DPG10I200PM DPG10I200PM IXYS DPG10I200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
6+65.27 грн
10+ 56.04 грн
17+ 51.08 грн
45+ 48.24 грн
Мінімальне замовлення: 6
DPG10I300PA DPG10I300PA IXYS DPG10I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
6+61.01 грн
10+ 54.62 грн
17+ 49.66 грн
46+ 46.82 грн
Мінімальне замовлення: 6
DPG10I400PA DPG10I400PA IXYS DPG10I400PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
4+100.03 грн
10+ 85.84 грн
11+ 79.45 грн
29+ 75.2 грн
Мінімальне замовлення: 4
DPG10I400PM DPG10I400PM IXYS DPG10I400PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
6+65.27 грн
10+ 56.75 грн
17+ 51.08 грн
45+ 48.24 грн
Мінімальне замовлення: 6
DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Case: ISOPLUS220™
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+396.5 грн
3+ 330.58 грн
4+ 263.9 грн
9+ 249.71 грн
VVZ39-08ho7 IXYS VTO39_VVZ39.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 39A; Ifsm: 180A
Version: module
Electrical mounting: THT
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.6V
Load current: 39A
Gate current: 25/50mA
Max. forward impulse current: 180A
товар відсутній
VVZ39-12ho7 IXYS VTO39_VVZ39.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 39A; THT
Version: module
Electrical mounting: THT
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.6V
Load current: 39A
Gate current: 25/50mA
Max. forward impulse current: 180A
товар відсутній
MDO600-16N1 MDO600-16N1 IXYS MDO600-16N1-DTE.pdf Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.01V
Load current: 560A
Semiconductor structure: single diode
Max. forward impulse current: 12.8kA
товар відсутній
IXFH150N30X3 IXFH150N30X3 IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
товар відсутній
IXFT150N30X3HV IXFT150N30X3HV IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
товар відсутній
MMIX1F230N20T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Mounting: SMD
Drain-source voltage: 200V
Drain current: 156A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 200ns
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 358nC
Case: SMPD
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 630A
товар відсутній
IXTK102N30P IXTK102N30P IXYS IXTK102N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain current: 102A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Gate charge: 224nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
товар відсутній
IXTK120N20P IXTK120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 180ns
Drain-source voltage: 200V
Drain current: 120A
товар відсутній
IXTK120P20T IXTK120P20T IXYS IXT_120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXTK170N10P IXTK170N10P IXYS IXTK170N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
1+812.87 грн
2+ 542.7 грн
5+ 512.9 грн
IXTK170P10P IXTK170P10P IXYS IXTK170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -170A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 176ns
товар відсутній
IXTK17N120L IXTK17N120L IXYS IXTK(X)17N120L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
товар відсутній
IXTK180N15P IXTK180N15P IXYS IXTK180N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
на замовлення 254 шт:
термін постачання 21-30 дні (днів)
1+1153.61 грн
2+ 730.69 грн
3+ 729.98 грн
4+ 690.25 грн
IXTK200N10L2 IXTK200N10L2 IXYS IXT_200N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 245ns
товар відсутній
IXTK200N10P IXTK200N10P IXYS IXTK200N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 100ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+964.9 грн
2+ 715.08 грн
4+ 676.07 грн
IXTK240N075L2 IXTK240N075L2 IXYS IXTK(X)240N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
товар відсутній
IXTK32P60P IXTK32P60P IXYS IXTK32P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
товар відсутній
IXTK3N250L IXTK3N250L IXYS IXTK(X)3N250L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; TO264; 370ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 3A
Power dissipation: 417W
Case: TO264
On-state resistance: 10Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 370ns
товар відсутній
IXTK40P50P IXTK40P50P IXYS IXTK40P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
товар відсутній
IXTK46N50L IXTK46N50L IXYS IXTK(X)46N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; TO264; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
товар відсутній
IXTK82N25P IXTK82N25P IXYS IXTK82N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 142nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 82A
On-state resistance: 38mΩ
товар відсутній
MCC56-08io1B MCC56-08io1B IXYS media?resourcetype=datasheets&itemid=37a5ec98-6bc7-49de-9bdb-cd8d1caa298a&filename=Littelfuse-Power-Semiconductors-MCC56-08io1B-Datasheet Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC56-08io8B MCC56-08io8B IXYS media?resourcetype=datasheets&itemid=0b343d7b-d93b-4d16-aa33-ff6bcad0f97e&filename=Littelfuse-Power-Semiconductors-MCC56-08io8B-Datasheet Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC56-12io1B MCC56-12io1B IXYS MCC56-12IO1B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Max. forward impulse current: 1.62kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+1720.48 грн
2+ 1510.33 грн
10+ 1509.62 грн
MCC56-12io8B MCC56-12io8B IXYS MCC56-12IO8B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
товар відсутній
MCC56-16io1B MCC56-16io1B IXYS L075.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+1927.52 грн
2+ 1692.65 грн
10+ 1671.37 грн
MCC56-16io8B MCC56-16io8B IXYS L075.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC56-18io1B MCC56-18io1B IXYS L075.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC56-18io8B MCC56-18io8B IXYS MCC56-18io8B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC95-08io1B MCC95-08io1B IXYS MCC95-08io1B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+2294.23 грн
2+ 2014.01 грн
36+ 1981.38 грн
MCC95-08io8B MCC95-08io8B IXYS MCC95_MCD95.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC95-12io8B MCC95-12io8B IXYS MCC95-12io8B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+2294.23 грн
2+ 2014.01 грн
10+ 1981.38 грн
MCC95-16io1B MCC95-16io1B IXYS MCC95-16io1B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+2381.32 грн
MCC95-16io8B MCC95-16io8B IXYS MCC95_MCD95.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
CPC1593G CPC1593.pdf
CPC1593G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: THT
Operating temperature: -40...85°C
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 2ms
товар відсутній
CPC1593GS CPC1593.pdf
CPC1593GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Operating temperature: -40...85°C
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 35Ω
Turn-on time: 2ms
товар відсутній
CLA60MT1200NHB CLA60MT1200NHB.pdf
CLA60MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 30A
Gate current: 60/80mA
Max. forward impulse current: 325A
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+493.53 грн
3+ 346.9 грн
7+ 327.75 грн
CLA60MT1200NHR CLA60MT1200NHR.pdf
CLA60MT1200NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: ISO247™
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 30A
Gate current: 60/80mA
Max. forward impulse current: 325A
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+517.21 грн
3+ 363.22 грн
7+ 343.35 грн
CLA80MT1200NHB CLA80MT1200NHB.pdf
CLA80MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 40A
Gate current: 70/90mA
Max. forward impulse current: 440A
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+610.42 грн
2+ 429.19 грн
3+ 428.48 грн
6+ 405.78 грн
CLA80MT1200NHR CLA80MT1200NHR.pdf
CLA80MT1200NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 440A
Mounting: THT
Case: ISO247™
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 40A
Gate current: 70/90mA
Max. forward impulse current: 440A
товар відсутній
IXFP14N85XM IXFP14N85XM.pdf
IXFP14N85XM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+381.23 грн
3+ 318.52 грн
4+ 249.71 грн
9+ 235.52 грн
Мінімальне замовлення: 2
IXFP30N25X3M IXFP30N25X3M.pdf
IXFP30N25X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
товар відсутній
IXFP60N25X3M IXFP60N25X3M.pdf
IXFP60N25X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+445.4 грн
3+ 331.29 грн
7+ 313.56 грн
IXFP8N85XM IXFP8N85XM.pdf
IXFP8N85XM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 8A; 33W; TO220FP; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 125ns
товар відсутній
IXTP230N04T4M IXTP230N04T4M.pdf
IXTP230N04T4M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товар відсутній
IXTP32N65XM IXTP32N65XM.pdf
IXTP32N65XM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
товар відсутній
IXTY10P15T IXT_10P15T.pdf
IXTY10P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTY15P15T IXT_15P15T.pdf
IXTY15P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
товар відсутній
IXTY18P10T IXT_18P10T.pdf
IXTY18P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+213.91 грн
5+ 178.77 грн
6+ 147.56 грн
16+ 139.75 грн
Мінімальне замовлення: 2
IXTY26P10T IXT_26P10T.pdf
IXTY26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+230.72 грн
5+ 192.96 грн
6+ 146.14 грн
16+ 138.33 грн
Мінімальне замовлення: 2
IXTY32P05T IXT_32P05T.pdf
IXTY32P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 26ns
товар відсутній
IXTN210P10T IXTN210P10T.pdf
IXTN210P10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Case: SOT227B
Power dissipation: 830W
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: -800A
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2895.48 грн
IXTR210P10T IXTR210P10T.pdf
IXTR210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: ISOPLUS247™
Kind of package: tube
Power dissipation: 390W
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1848.06 грн
2+ 1622.42 грн
30+ 1560.7 грн
IXTX210P10T IXTX210P10T.pdf
IXTX210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: PLUS247™
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1715.13 грн
2+ 1505.37 грн
DPG10I200PA media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet
DPG10I200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+100.85 грн
5+ 84.42 грн
10+ 74.49 грн
13+ 67.39 грн
34+ 63.14 грн
Мінімальне замовлення: 4
DPG10I200PM DPG10I200PM.pdf
DPG10I200PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+65.27 грн
10+ 56.04 грн
17+ 51.08 грн
45+ 48.24 грн
Мінімальне замовлення: 6
DPG10I300PA DPG10I300PA.pdf
DPG10I300PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+61.01 грн
10+ 54.62 грн
17+ 49.66 грн
46+ 46.82 грн
Мінімальне замовлення: 6
DPG10I400PA DPG10I400PA.pdf
DPG10I400PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+100.03 грн
10+ 85.84 грн
11+ 79.45 грн
29+ 75.2 грн
Мінімальне замовлення: 4
DPG10I400PM DPG10I400PM.pdf
DPG10I400PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+65.27 грн
10+ 56.75 грн
17+ 51.08 грн
45+ 48.24 грн
Мінімальне замовлення: 6
DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Case: ISOPLUS220™
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+396.5 грн
3+ 330.58 грн
4+ 263.9 грн
9+ 249.71 грн
VVZ39-08ho7 VTO39_VVZ39.pdf
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 39A; Ifsm: 180A
Version: module
Electrical mounting: THT
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.6V
Load current: 39A
Gate current: 25/50mA
Max. forward impulse current: 180A
товар відсутній
VVZ39-12ho7 VTO39_VVZ39.pdf
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 39A; THT
Version: module
Electrical mounting: THT
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.6V
Load current: 39A
Gate current: 25/50mA
Max. forward impulse current: 180A
товар відсутній
MDO600-16N1 MDO600-16N1-DTE.pdf
MDO600-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.01V
Load current: 560A
Semiconductor structure: single diode
Max. forward impulse current: 12.8kA
товар відсутній
IXFH150N30X3 IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFH150N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
товар відсутній
IXFT150N30X3HV IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFT150N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
товар відсутній
MMIX1F230N20T littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Mounting: SMD
Drain-source voltage: 200V
Drain current: 156A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 200ns
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 358nC
Case: SMPD
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 630A
товар відсутній
IXTK102N30P IXTK102N30P-DTE.pdf
IXTK102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Drain current: 102A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Gate charge: 224nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
товар відсутній
IXTK120N20P IXTK120N20P-DTE.pdf
IXTK120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 180ns
Drain-source voltage: 200V
Drain current: 120A
товар відсутній
IXTK120P20T IXT_120P20T.pdf
IXTK120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXTK170N10P IXTK170N10P-DTE.pdf
IXTK170N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+812.87 грн
2+ 542.7 грн
5+ 512.9 грн
IXTK170P10P IXTK170P10P.pdf
IXTK170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -170A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 176ns
товар відсутній
IXTK17N120L IXTK(X)17N120L.pdf
IXTK17N120L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
товар відсутній
IXTK180N15P IXTK180N15P-DTE.pdf
IXTK180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
на замовлення 254 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1153.61 грн
2+ 730.69 грн
3+ 729.98 грн
4+ 690.25 грн
IXTK200N10L2 IXT_200N10L2.pdf
IXTK200N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 245ns
товар відсутній
IXTK200N10P IXTK200N10P-DTE.pdf
IXTK200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 100ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+964.9 грн
2+ 715.08 грн
4+ 676.07 грн
IXTK240N075L2 IXTK(X)240N075L2.pdf
IXTK240N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
товар відсутній
IXTK32P60P IXTK32P60P.pdf
IXTK32P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
товар відсутній
IXTK3N250L IXTK(X)3N250L.pdf
IXTK3N250L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; TO264; 370ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 3A
Power dissipation: 417W
Case: TO264
On-state resistance: 10Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 370ns
товар відсутній
IXTK40P50P IXTK40P50P.pdf
IXTK40P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
товар відсутній
IXTK46N50L IXTK(X)46N50L.pdf
IXTK46N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; TO264; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
товар відсутній
IXTK82N25P IXTK82N25P-DTE.pdf
IXTK82N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 142nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 82A
On-state resistance: 38mΩ
товар відсутній
MCC56-08io1B media?resourcetype=datasheets&itemid=37a5ec98-6bc7-49de-9bdb-cd8d1caa298a&filename=Littelfuse-Power-Semiconductors-MCC56-08io1B-Datasheet
MCC56-08io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC56-08io8B media?resourcetype=datasheets&itemid=0b343d7b-d93b-4d16-aa33-ff6bcad0f97e&filename=Littelfuse-Power-Semiconductors-MCC56-08io8B-Datasheet
MCC56-08io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC56-12io1B MCC56-12IO1B.pdf
MCC56-12io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Max. forward impulse current: 1.62kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1720.48 грн
2+ 1510.33 грн
10+ 1509.62 грн
MCC56-12io8B MCC56-12IO8B.pdf
MCC56-12io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
товар відсутній
MCC56-16io1B L075.pdf
MCC56-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1927.52 грн
2+ 1692.65 грн
10+ 1671.37 грн
MCC56-16io8B L075.pdf
MCC56-16io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC56-18io1B L075.pdf
MCC56-18io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC56-18io8B MCC56-18io8B.pdf
MCC56-18io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC95-08io1B MCC95-08io1B.pdf
MCC95-08io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2294.23 грн
2+ 2014.01 грн
36+ 1981.38 грн
MCC95-08io8B MCC95_MCD95.pdf
MCC95-08io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC95-12io8B MCC95-12io8B.pdf
MCC95-12io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2294.23 грн
2+ 2014.01 грн
10+ 1981.38 грн
MCC95-16io1B MCC95-16io1B.pdf
MCC95-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2381.32 грн
MCC95-16io8B MCC95_MCD95.pdf
MCC95-16io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
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