Фото | Назва | Виробник | Інформація |
Доступність |
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MCC56-18io1B | IXYS |
![]() Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.8kV Max. forward voltage: 1.57V Load current: 60A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 1.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
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MCC56-18io8B | IXYS |
![]() Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.8kV Max. forward voltage: 1.62V Load current: 60A Semiconductor structure: double series Gate current: 100/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
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MCC95-08io1B | IXYS |
![]() Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.5V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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MCC95-08io8B | IXYS |
![]() Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.7V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCC95-12io8B | IXYS |
![]() Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; Ufmax: 1.5V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 116A Case: TO240AA Max. forward voltage: 1.5V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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MCC95-16io1B | IXYS |
![]() Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 116A Case: TO240AA Max. forward voltage: 1.5V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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MCC95-16io8B | IXYS |
![]() Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.7V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCC95-18io8B | IXYS |
![]() Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.7V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MDMA120U1600VA | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; 1.6kV; If: 120A; Ifsm: 850A; module Max. off-state voltage: 1.6kV Load current: 120A Case: V1-A-Pack Max. forward impulse current: 850A Version: module Mechanical mounting: screw Leads: connectors 2,0x0,5mm Electrical mounting: FASTON connectors Type of bridge rectifier: three-phase |
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CPC1510G | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC Mounting: THT Control current max.: 50mA Kind of output: MOSFET On-state resistance: 15Ω Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 0.2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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CPC1510GS | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC Mounting: SMT Control current max.: 50mA Kind of output: MOSFET On-state resistance: 15Ω Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 0.2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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DSS2X101-015A | IXYS |
![]() ![]() Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 150V Load current: 100A x2 Case: SOT227B Max. forward voltage: 0.99V Max. forward impulse current: 1.4kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
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IXTN102N65X2 | IXYS |
![]() Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A Case: SOT227B Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 152nC Technology: X2-Class Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 204A Semiconductor structure: single transistor Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 76A On-state resistance: 30mΩ |
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IXFR90N30 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 75A Power dissipation: 417W Case: ISOPLUS247™ On-state resistance: 36mΩ Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhanced |
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IXTA75N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 74nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
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IXTQ130N20T | IXYS |
![]() Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Type of transistor: N-MOSFET Technology: Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Pulsed drain current: 320A Power dissipation: 830W Case: TO3P Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 150ns |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXTQ75N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
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DSEC16-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W Mounting: THT Case: TO220AB Kind of package: tube Max. forward impulse current: 40A Max. off-state voltage: 1.2kV Max. forward voltage: 2.94V Load current: 8A x2 Semiconductor structure: common cathode; double Reverse recovery time: 40ns Power dissipation: 60W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Heatsink thickness: 1.14...1.39mm |
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DSEC16-12AS-TUB | IXYS |
![]() Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W Mounting: SMD Case: D2PAK Kind of package: tube Max. forward impulse current: 40A Max. off-state voltage: 1.2kV Max. forward voltage: 1.96V Load current: 8A x2 Semiconductor structure: common cathode; double Reverse recovery time: 40ns Power dissipation: 60W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ |
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MDD142-08N1 | IXYS |
![]() Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
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MDD142-12N1 | IXYS |
![]() Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
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MDD142-14N1 | IXYS |
![]() Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
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DSEP15-06A | IXYS |
![]() Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 110A Case: TO220AC Max. forward voltage: 1.35V Heatsink thickness: 1.14...1.39mm Power dissipation: 95W Reverse recovery time: 35ns Technology: HiPerFRED™ |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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DMA90U1800LB-TUB | IXYS |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A Max. off-state voltage: 1.8kV Max. forward impulse current: 350A Case: SMPD Electrical mounting: SMT Type of bridge rectifier: three-phase Max. forward voltage: 1.26V Load current: 90A |
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VBE20-20NO1 | IXYS |
![]() Description: Bridge rectifier: single-phase; Urmax: 2kV; If: 20A; Ifsm: 65A; FRED Version: module Technology: FRED Mechanical mounting: screw Leads: connectors 2,0x0,5mm Max. off-state voltage: 2kV Electrical mounting: FASTON connectors Load current: 20A Case: V1-A-Pack Type of bridge rectifier: single-phase Max. forward impulse current: 65A |
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DSA1-18D | IXYS |
![]() Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 2.3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Kind of package: tube Max. forward impulse current: 110A Case: FP-Case Max. forward voltage: 1.34V |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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MCMA85P1600TA | IXYS |
![]() Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 85A Case: TO240AA Max. forward voltage: 1.51V Max. forward impulse current: 1.28kA Electrical mounting: screw Max. load current: 135A Mechanical mounting: screw Kind of package: bulk Gate current: 95/200mA |
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XBB170 | IXYS |
![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; THT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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XBB170P | IXYS |
![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 248 шт: термін постачання 21-30 дні (днів) |
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XBB170PTR | IXYS |
![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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XBB170S | IXYS |
![]() Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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IXTA80N12T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns Mounting: SMD On-state resistance: 17mΩ Reverse recovery time: 90ns Power dissipation: 325W Gate charge: 80nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 80A Kind of channel: enhanced Drain-source voltage: 120V Type of transistor: N-MOSFET Kind of package: tube Case: TO263 |
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CPC2014N | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC Body dimensions: 9.35x3.81x2.18mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT Turn-off time: 1ms Turn-on time: 2ms On-state resistance: 2Ω Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO x2 Max. operating current: 0.4A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Case: SO8 |
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CPC2014NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC Body dimensions: 9.35x3.81x2.18mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT Turn-off time: 1ms Turn-on time: 2ms On-state resistance: 2Ω Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO x2 Max. operating current: 0.4A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Case: SO8 |
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CPC2017N | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω Body dimensions: 9.35x3.81x2.18mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT Turn-off time: 3ms Turn-on time: 3ms On-state resistance: 16Ω Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50000mA Case: SO8 |
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CPC2017NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC Body dimensions: 9.35x3.81x2.18mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT Turn-off time: 3ms Turn-on time: 3ms On-state resistance: 16Ω Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Case: SO8 |
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CPC2030N | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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CPC2030NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
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IXFT120N25X3HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns Mounting: SMD Case: TO268HV Drain current: 120A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 122nC Kind of channel: enhanced Reverse recovery time: 140ns Drain-source voltage: 250V |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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IXFR180N15P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
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IXTA3N120HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263HV Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 700ns |
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IXTH3N120 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO247-3 Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 700ns |
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IXTA3N120 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 700ns |
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IXTP3N120 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 700ns |
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CPC1998J | IXYS |
![]() Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; THT Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 20.88x19.91x5.03mm Operating temperature: -40...85°C Insulation voltage: 2.5kV Switching method: zero voltage switching Switched voltage: max. 240V AC Case: i4-pac Max. operating current: 5A Control current max.: 150mA |
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IXTA230N04T4 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 340W Case: TO263 On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 32ns |
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IXTP230N04T4 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 340W Case: TO220AB On-state resistance: 2.9mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 32ns |
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IXFH170N10P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
товар відсутній |
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IXFK170N10P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO264 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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IXTQ170N10P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3P Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO3P Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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DSEC120-12AK | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W Mounting: THT Max. forward impulse current: 0.5kA Power dissipation: 330W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Case: TO264 Max. off-state voltage: 1.2kV Max. forward voltage: 2.66V Load current: 60A x2 Semiconductor structure: common cathode; double Reverse recovery time: 40ns |
товар відсутній |
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MMJX1H40N150 | IXYS |
![]() Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT) Type of thyristor: thyristor Mounting: SMD Case: SMPD Max. off-state voltage: 1.5kV Max. forward impulse current: 15.5kA |
товар відсутній |
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MDD56-16N1B | IXYS |
![]() Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 71A Case: TO240AA Max. forward voltage: 1.14V Max. forward impulse current: 1.19kA Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw |
товар відсутній |
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PS2601 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; THT Switching method: zero voltage switching Operating temperature: -40...85°C Switched voltage: max. 600V AC Body dimensions: 19.2x6.35x3.3mm Mounting: THT Insulation voltage: 3.75kV Case: SIP4 Max. operating current: 1A Control current max.: 100mA Type of relay: solid state Relay variant: 1-phase |
товар відсутній |
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MDD56-08N1B | IXYS |
![]() Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 71A Case: TO240AA Max. forward voltage: 1.14V Max. forward impulse current: 1.4kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
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MDD56-14N1B | IXYS |
![]() Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 71A Case: TO240AA Max. forward voltage: 1.14V Max. forward impulse current: 1.4kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
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MDD56-18N1B | IXYS |
![]() Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 71A Case: TO240AA Max. forward voltage: 1.14V Max. forward impulse current: 1.4kA Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw |
товар відсутній |
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IXFX32N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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IXTA140N12T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 140A Power dissipation: 577W Case: TO263 On-state resistance: 10mΩ Mounting: SMD Gate charge: 174nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 65ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXYH12N250C | IXYS |
![]() Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Type of transistor: IGBT Power dissipation: 310W Features of semiconductor devices: high voltage Gate charge: 56nC Technology: XPT™ Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 48A Turn-on time: 12ns Turn-off time: 167ns |
товар відсутній |
MCC56-18io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.57V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC56-18io8B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC95-08io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2355.54 грн |
2+ | 2068.23 грн |
36+ | 2027.58 грн |
MCC95-08io8B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC95-12io8B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 29 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2347.73 грн |
2+ | 2060.98 грн |
10+ | 2027.58 грн |
MCC95-16io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2436.85 грн |
MCC95-16io8B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC95-18io8B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MDMA120U1600VA |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 120A; Ifsm: 850A; module
Max. off-state voltage: 1.6kV
Load current: 120A
Case: V1-A-Pack
Max. forward impulse current: 850A
Version: module
Mechanical mounting: screw
Leads: connectors 2,0x0,5mm
Electrical mounting: FASTON connectors
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 120A; Ifsm: 850A; module
Max. off-state voltage: 1.6kV
Load current: 120A
Case: V1-A-Pack
Max. forward impulse current: 850A
Version: module
Mechanical mounting: screw
Leads: connectors 2,0x0,5mm
Electrical mounting: FASTON connectors
Type of bridge rectifier: three-phase
товар відсутній
CPC1510G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: THT
Control current max.: 50mA
Kind of output: MOSFET
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: THT
Control current max.: 50mA
Kind of output: MOSFET
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 348.68 грн |
6+ | 155.35 грн |
15+ | 146.64 грн |
CPC1510GS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Control current max.: 50mA
Kind of output: MOSFET
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Control current max.: 50mA
Kind of output: MOSFET
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 361.19 грн |
5+ | 168.42 грн |
14+ | 158.98 грн |
DSS2X101-015A | ![]() |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 0.99V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 0.99V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
товар відсутній
IXTN102N65X2 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Technology: X2-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 204A
Semiconductor structure: single transistor
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 76A
On-state resistance: 30mΩ
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Technology: X2-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 204A
Semiconductor structure: single transistor
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 76A
On-state resistance: 30mΩ
товар відсутній
IXFR90N30 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 75A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 75A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTA75N10P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTQ130N20T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 623.87 грн |
3+ | 418.87 грн |
6+ | 395.64 грн |
IXTQ75N10P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
DSEC16-12A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.94V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.94V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
товар відсутній
DSEC16-12AS-TUB |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.96V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.96V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товар відсутній
MDD142-08N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MDD142-12N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MDD142-14N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
DSEP15-06A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: TO220AC
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: TO220AC
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 140.72 грн |
4+ | 118.33 грн |
9+ | 94.37 грн |
25+ | 89.29 грн |
DMA90U1800LB-TUB |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 350A
Case: SMPD
Electrical mounting: SMT
Type of bridge rectifier: three-phase
Max. forward voltage: 1.26V
Load current: 90A
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 350A
Case: SMPD
Electrical mounting: SMT
Type of bridge rectifier: three-phase
Max. forward voltage: 1.26V
Load current: 90A
товар відсутній
VBE20-20NO1 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 2kV; If: 20A; Ifsm: 65A; FRED
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 2kV
Electrical mounting: FASTON connectors
Load current: 20A
Case: V1-A-Pack
Type of bridge rectifier: single-phase
Max. forward impulse current: 65A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 2kV; If: 20A; Ifsm: 65A; FRED
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 2kV
Electrical mounting: FASTON connectors
Load current: 20A
Case: V1-A-Pack
Type of bridge rectifier: single-phase
Max. forward impulse current: 65A
товар відсутній
DSA1-18D |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 347.9 грн |
4+ | 222.87 грн |
11+ | 210.53 грн |
MCMA85P1600TA |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.51V
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. load current: 135A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 95/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.51V
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. load current: 135A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 95/200mA
товар відсутній
XBB170 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 250 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 529.27 грн |
4+ | 235.93 грн |
10+ | 222.87 грн |
XBB170P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 248 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 531.62 грн |
4+ | 236.66 грн |
10+ | 223.59 грн |
XBB170PTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
XBB170S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 195 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 531.62 грн |
4+ | 236.66 грн |
10+ | 223.59 грн |
IXTA80N12T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
товар відсутній
CPC2014N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
товар відсутній
CPC2014NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
товар відсутній
CPC2017N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 3ms
Turn-on time: 3ms
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50000mA
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 3ms
Turn-on time: 3ms
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50000mA
Case: SO8
товар відсутній
CPC2017NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 3ms
Turn-on time: 3ms
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 3ms
Turn-on time: 3ms
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
товар відсутній
CPC2030N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
на замовлення 280 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 229.85 грн |
9+ | 96.55 грн |
24+ | 91.47 грн |
CPC2030NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
IXFT120N25X3HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Case: TO268HV
Drain current: 120A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 122nC
Kind of channel: enhanced
Reverse recovery time: 140ns
Drain-source voltage: 250V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Case: TO268HV
Drain current: 120A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 122nC
Kind of channel: enhanced
Reverse recovery time: 140ns
Drain-source voltage: 250V
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 906.1 грн |
2+ | 675.13 грн |
4+ | 638.11 грн |
IXFR180N15P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
IXTA3N120HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
IXTH3N120 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
IXTA3N120 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
товар відсутній
IXTP3N120 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
товар відсутній
CPC1998J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; THT
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 20.88x19.91x5.03mm
Operating temperature: -40...85°C
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; THT
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 20.88x19.91x5.03mm
Operating temperature: -40...85°C
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
товар відсутній
IXTA230N04T4 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товар відсутній
IXTP230N04T4 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товар відсутній
IXFH170N10P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXFK170N10P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 39 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 920.95 грн |
2+ | 630.13 грн |
4+ | 596.01 грн |
IXTQ170N10P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3P
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3P
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 749.74 грн |
DSEC120-12AK |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 330W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: TO264
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.66V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 330W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: TO264
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.66V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
товар відсутній
MMJX1H40N150 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Type of thyristor: thyristor
Mounting: SMD
Case: SMPD
Max. off-state voltage: 1.5kV
Max. forward impulse current: 15.5kA
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Type of thyristor: thyristor
Mounting: SMD
Case: SMPD
Max. off-state voltage: 1.5kV
Max. forward impulse current: 15.5kA
товар відсутній
MDD56-16N1B |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
товар відсутній
PS2601 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Switched voltage: max. 600V AC
Body dimensions: 19.2x6.35x3.3mm
Mounting: THT
Insulation voltage: 3.75kV
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Switched voltage: max. 600V AC
Body dimensions: 19.2x6.35x3.3mm
Mounting: THT
Insulation voltage: 3.75kV
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Relay variant: 1-phase
товар відсутній
MDD56-08N1B |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MDD56-14N1B |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MDD56-18N1B |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
товар відсутній
IXFX32N100P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTA140N12T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 374.48 грн |
3+ | 312.88 грн |
4+ | 249 грн |
IXYH12N250C |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 48A
Turn-on time: 12ns
Turn-off time: 167ns
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 48A
Turn-on time: 12ns
Turn-off time: 167ns
товар відсутній