| Фото | Назва | Виробник | Інформація |
Доступність |
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IXTX3N250L | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns Case: PLUS247™ Mounting: THT Kind of package: tube Drain-source voltage: 2.5kV Type of transistor: N-MOSFET On-state resistance: 10Ω Reverse recovery time: 370ns Power dissipation: 417W Gate charge: 230nC Polarisation: unipolar Features of semiconductor devices: linear power mosfet Drain current: 3A Kind of channel: enhanced |
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| CPC1988J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 900mA; max.1kVAC Mounting: THT Case: ISOPLUS264™ Operating temperature: -40...85°C Max. operating current: 900mA Manufacturer series: OptoMOS Turn-off time: 5ms Body dimensions: 19.91x26.16x5.03mm Kind of output: MOSFET Insulation voltage: 2.5kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 1kV AC Control current max.: 100mA On-state resistance: 2.5Ω Turn-on time: 20ms |
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IXTA36N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 300W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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DSA30C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Power dissipation: 35W Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward impulse current: 340A Max. forward voltage: 0.73V |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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DSA30C100PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Power dissipation: 35W Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 340A Max. forward voltage: 0.73V |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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DSA30C100QB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO3P; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Power dissipation: 85W Semiconductor structure: common cathode; double Case: TO3P Kind of package: tube Max. forward impulse current: 340A Max. forward voltage: 0.72V |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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DPG15I200PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W Mounting: THT Case: TO220AC Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 200V Max. forward voltage: 1.26V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 240A Power dissipation: 90W Kind of package: tube Type of diode: rectifying |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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DPG15I300PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W Mounting: THT Case: TO220AC Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 300V Max. forward voltage: 1.26V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 240A Power dissipation: 90W Kind of package: tube Type of diode: rectifying |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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DPG15I400PM | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W Mounting: THT Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO220FP-2 Max. off-state voltage: 0.4kV Max. forward voltage: 1.39V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 45ns Max. forward impulse current: 190A |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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DSA80C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 40Ax2; 250W; TO220AB; tube Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.8V Load current: 40A x2 Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Max. forward impulse current: 490A Kind of package: tube Power dissipation: 250W Heatsink thickness: 1.14...1.39mm |
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DSS2X41-01A | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw Max. off-state voltage: 100V Max. forward voltage: 0.7V Load current: 40A x2 Semiconductor structure: double independent Case: SOT227B Features of semiconductor devices: Schottky Max. forward impulse current: 0.45kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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IXFN80N50 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Pulsed drain current: 320A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 380nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN80N50P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 66A Pulsed drain current: 200A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 65mΩ Gate charge: 195nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN80N50Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 65mΩ Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFX200N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 830W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhanced |
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IXFX230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 230A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 358nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXFX240N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 240A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5mΩ Mounting: THT Gate charge: 345nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 177ns |
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IXTX200N10L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 11mΩ Mounting: THT Gate charge: 540nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 245ns |
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LCC110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: THT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
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LCC110P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x2.16mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
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| LCC110PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x2.16mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
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LCC110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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| LCC110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
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LCC120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source Mounting: THT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Manufacturer series: OptoMOS Insulation voltage: 3.75kV Max. operating current: 0.17A Turn-off time: 5ms Turn-on time: 5ms On-state resistance: 20Ω Control current max.: 50mA |
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LCC120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Manufacturer series: OptoMOS Insulation voltage: 3.75kV Max. operating current: 0.17A Turn-off time: 5ms Turn-on time: 5ms On-state resistance: 20Ω Control current max.: 50mA |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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| LCC120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Manufacturer series: OptoMOS Insulation voltage: 3.75kV Max. operating current: 0.17A Turn-off time: 5ms Turn-on time: 5ms On-state resistance: 20Ω Control current max.: 50mA |
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IXTA96P085T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 55ns |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
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IXTH96P085T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO247-3 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 55ns |
на замовлення 249 шт: термін постачання 21-30 дні (днів) |
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IXFT50N30Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 50A Power dissipation: 690W Case: TO268 On-state resistance: 80mΩ Mounting: SMD Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
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IXFT50N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 50A Power dissipation: 890W Case: TO268HV On-state resistance: 0.105Ω Mounting: SMD Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 218ns |
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| MD16110A-DKM2MM | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A Max. off-state voltage: 1.6kV Max. load current: 170A Max. forward voltage: 1.6V Load current: 110A Semiconductor structure: common cathode; double Max. forward impulse current: 2.5kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: package A |
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| MCC161-20io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2kV; 165A; Y4-M6; Ufmax: 1.36V Max. off-state voltage: 2kV Max. forward voltage: 1.36V Load current: 165A Semiconductor structure: double series Gate current: 150/200mA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: Y4-M6 |
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MCC161-22IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 165A; Y4-M6; Ufmax: 1.36V Max. off-state voltage: 2.2kV Max. forward voltage: 1.36V Load current: 165A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 6.48kA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: Y4-M6 |
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| MCD161-20io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2kV; 165A; Y4-M6; Ufmax: 1.08V; Ifsm: 6kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V Case: Y4-M6 Max. off-state voltage: 2kV Max. load current: 300A Max. forward voltage: 1.08V Load current: 165A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 6kA |
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| MCD161-22io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 165A; Y4-M6; Ufmax: 1.08V; Ifsm: 6kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V Case: Y4-M6 Max. off-state voltage: 2.2kV Max. load current: 300A Max. forward voltage: 1.08V Load current: 165A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 6kA |
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MEO450-12DA | IXYS |
Category: Diode modules Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 453A Case: Y4-M6 Max. forward voltage: 1.76V Max. forward impulse current: 4.8kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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MEO500-06DA | IXYS |
Category: Diode modules Description: Module: diode; single diode; 600V; If: 514A; Y4-M6; Ufmax: 1.41V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 514A Case: Y4-M6 Max. forward voltage: 1.41V Max. forward impulse current: 4.8kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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IXFT120N15P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Reverse recovery time: 200ns Drain-source voltage: 150V Drain current: 120A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Gate charge: 150nC Technology: HiPerFET™; PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFT120N30X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Power dissipation: 735W Polarisation: unipolar Gate charge: 170nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 145ns Drain-source voltage: 300V Drain current: 120A On-state resistance: 11mΩ Type of transistor: N-MOSFET |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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FMM50-025TF | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A Polarisation: unipolar Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 84ns Drain-source voltage: 250V Drain current: 30A On-state resistance: 60mΩ Type of transistor: N-MOSFET x2 Power dissipation: 125W Kind of package: tube Gate charge: 78nC Technology: HiPerFET™; Trench Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 130A Mounting: THT |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXFN36N100 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 36A Pulsed drain current: 144A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.24Ω Gate charge: 380nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 180ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| VUM85-05A | IXYS |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 130A; V2-Pack; Press-in PCB; 945nC Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 130A Case: V2-Pack Topology: 3-phase PFC Electrical mounting: Press-in PCB Polarisation: unipolar On-state resistance: 36mΩ Pulsed drain current: 520A Power dissipation: 1.38kW Gate charge: 945nC Gate-source voltage: ±20V Mechanical mounting: screw |
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IXFX420N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 2.6mΩ Mounting: THT Gate charge: 670nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXTQ50N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO3P On-state resistance: 50mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 166ns |
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CLA16E800PN | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 195A Mounting: THT Kind of package: tube Load current: 10A |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXTY1R6N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns Mounting: SMD Gate charge: 23.7nC Kind of channel: depleted Gate-source voltage: ±20V Case: TO252 Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 1.6A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: tube |
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LOC117S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
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LOC117STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
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IXDN630MYI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Supply voltage: 9...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXDN630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 236 шт: термін постачання 21-30 дні (днів) |
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| LCA125STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC Operating temperature: -40...85°C Manufacturer series: OptoMOS Case: DIP6 On-state resistance: 16Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 300V AC; max. 300V DC Mounting: SMT Control current max.: 50mA |
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IXTQ470P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns Case: TO3P Mounting: THT On-state resistance: 0.145Ω Kind of package: tube Power dissipation: 830W Drain current: 42A Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: standard power mosfet Gate charge: 88nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V |
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MCO150-16IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 158A Case: SOT227B Max. forward voltage: 1.78V Max. forward impulse current: 2.16kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXTA8N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
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IXFH10N100 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 300W; TO247-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXFX80N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced |
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IXFX80N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
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IXFA72N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263 Reverse recovery time: 84ns Drain-source voltage: 200V Drain current: 72A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube Gate charge: 55nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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IXFA72N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Drain current: 72A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 100ns Drain-source voltage: 300V |
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IXFH70N20Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3 Drain-source voltage: 200V Drain current: 70A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhanced Mounting: THT Case: TO247-3 |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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| IXTX3N250L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
товар відсутній
| CPC1988J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 900mA; max.1kVAC
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Max. operating current: 900mA
Manufacturer series: OptoMOS
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 1kV AC
Control current max.: 100mA
On-state resistance: 2.5Ω
Turn-on time: 20ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 900mA; max.1kVAC
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Max. operating current: 900mA
Manufacturer series: OptoMOS
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 1kV AC
Control current max.: 100mA
On-state resistance: 2.5Ω
Turn-on time: 20ms
товар відсутній
| IXTA36N30P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.68 грн |
| 3+ | 215.61 грн |
| 5+ | 184.39 грн |
| 13+ | 174.95 грн |
| DSA30C100PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 340A
Max. forward voltage: 0.73V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 340A
Max. forward voltage: 0.73V
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.45 грн |
| DSA30C100PN |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.73V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.73V
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.91 грн |
| 10+ | 89.29 грн |
| 11+ | 79.85 грн |
| 29+ | 75.5 грн |
| DSA30C100QB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO3P; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO3P
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO3P; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO3P
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.55 грн |
| 8+ | 118.33 грн |
| 20+ | 111.8 грн |
| DPG15I200PA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Mounting: THT
Case: TO220AC
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Mounting: THT
Case: TO220AC
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
на замовлення 68 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 84.43 грн |
| 6+ | 71.87 грн |
| 10+ | 63.16 грн |
| 16+ | 53.72 грн |
| 43+ | 50.82 грн |
| DPG15I300PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Mounting: THT
Case: TO220AC
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Mounting: THT
Case: TO220AC
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 84.43 грн |
| 6+ | 71.87 грн |
| 10+ | 63.88 грн |
| 16+ | 53.72 грн |
| 43+ | 50.82 грн |
| DPG15I400PM |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W
Mounting: THT
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W
Mounting: THT
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 190A
на замовлення 192 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 81.31 грн |
| 6+ | 68.97 грн |
| 10+ | 60.25 грн |
| 16+ | 54.45 грн |
| 44+ | 50.82 грн |
| DSA80C100PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 40Ax2; 250W; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 490A
Kind of package: tube
Power dissipation: 250W
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 40Ax2; 250W; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 490A
Kind of package: tube
Power dissipation: 250W
Heatsink thickness: 1.14...1.39mm
товар відсутній
| DSS2X41-01A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Max. off-state voltage: 100V
Max. forward voltage: 0.7V
Load current: 40A x2
Semiconductor structure: double independent
Case: SOT227B
Features of semiconductor devices: Schottky
Max. forward impulse current: 0.45kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Max. off-state voltage: 100V
Max. forward voltage: 0.7V
Load current: 40A x2
Semiconductor structure: double independent
Case: SOT227B
Features of semiconductor devices: Schottky
Max. forward impulse current: 0.45kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| IXFN80N50 | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN80N50P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Gate charge: 195nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Gate charge: 195nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN80N50Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFX200N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX230N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFX240N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 177ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 177ns
товар відсутній
| IXTX200N10L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 245ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 540nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 245ns
товар відсутній
| LCC110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
товар відсутній
| LCC110P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x2.16mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x2.16mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
товар відсутній
| LCC110PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x2.16mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x2.16mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
товар відсутній
| LCC110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
на замовлення 166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 490.18 грн |
| 5+ | 208.35 грн |
| 12+ | 197.46 грн |
| LCC110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
товар відсутній
| LCC120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Max. operating current: 0.17A
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 20Ω
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Max. operating current: 0.17A
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 20Ω
Control current max.: 50mA
товар відсутній
| LCC120S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Max. operating current: 0.17A
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 20Ω
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Max. operating current: 0.17A
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 20Ω
Control current max.: 50mA
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 634.82 грн |
| 4+ | 268.6 грн |
| 9+ | 253.36 грн |
| LCC120STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Max. operating current: 0.17A
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 20Ω
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Max. operating current: 0.17A
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 20Ω
Control current max.: 50mA
товар відсутній
| IXTA96P085T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
на замовлення 289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 413.57 грн |
| 3+ | 331.03 грн |
| 4+ | 264.25 грн |
| 9+ | 249.73 грн |
| IXTH96P085T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO247-3
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO247-3
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
на замовлення 249 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 536.31 грн |
| 3+ | 357.17 грн |
| 7+ | 337.57 грн |
| IXFT50N30Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT50N85XHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
товар відсутній
| MD16110A-DKM2MM |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.6V
Load current: 110A
Semiconductor structure: common cathode; double
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package A
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.6V
Load current: 110A
Semiconductor structure: common cathode; double
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package A
товар відсутній
| MCC161-20io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 165A; Y4-M6; Ufmax: 1.36V
Max. off-state voltage: 2kV
Max. forward voltage: 1.36V
Load current: 165A
Semiconductor structure: double series
Gate current: 150/200mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 165A; Y4-M6; Ufmax: 1.36V
Max. off-state voltage: 2kV
Max. forward voltage: 1.36V
Load current: 165A
Semiconductor structure: double series
Gate current: 150/200mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
товар відсутній
| MCC161-22IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 165A; Y4-M6; Ufmax: 1.36V
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.36V
Load current: 165A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6.48kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 165A; Y4-M6; Ufmax: 1.36V
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.36V
Load current: 165A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6.48kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y4-M6
товар відсутній
| MCD161-20io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 165A; Y4-M6; Ufmax: 1.08V; Ifsm: 6kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Case: Y4-M6
Max. off-state voltage: 2kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 165A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 165A; Y4-M6; Ufmax: 1.08V; Ifsm: 6kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Case: Y4-M6
Max. off-state voltage: 2kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 165A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
товар відсутній
| MCD161-22io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 165A; Y4-M6; Ufmax: 1.08V; Ifsm: 6kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 165A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 165A; Y4-M6; Ufmax: 1.08V; Ifsm: 6kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 165A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 6kA
товар відсутній
| MEO450-12DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 453A
Case: Y4-M6
Max. forward voltage: 1.76V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 453A
Case: Y4-M6
Max. forward voltage: 1.76V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5496.01 грн |
| MEO500-06DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 514A; Y4-M6; Ufmax: 1.41V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 514A
Case: Y4-M6
Max. forward voltage: 1.41V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 514A; Y4-M6; Ufmax: 1.41V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 514A
Case: Y4-M6
Max. forward voltage: 1.41V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5284.92 грн |
| IXFT120N15P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 150nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 150nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 678.6 грн |
| 2+ | 454.45 грн |
| 6+ | 429.76 грн |
| IXFT120N30X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Power dissipation: 735W
Polarisation: unipolar
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 145ns
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Power dissipation: 735W
Polarisation: unipolar
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 145ns
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1164.09 грн |
| 2+ | 846.46 грн |
| 3+ | 800 грн |
| FMM50-025TF |
|
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Polarisation: unipolar
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 84ns
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 125W
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™; Trench
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Mounting: THT
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Polarisation: unipolar
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 84ns
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 125W
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™; Trench
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Mounting: THT
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1141.42 грн |
| 3+ | 1001.81 грн |
| IXFN36N100 | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 180ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 180ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| VUM85-05A |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 130A; V2-Pack; Press-in PCB; 945nC
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 130A
Case: V2-Pack
Topology: 3-phase PFC
Electrical mounting: Press-in PCB
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 520A
Power dissipation: 1.38kW
Gate charge: 945nC
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 130A; V2-Pack; Press-in PCB; 945nC
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 130A
Case: V2-Pack
Topology: 3-phase PFC
Electrical mounting: Press-in PCB
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 520A
Power dissipation: 1.38kW
Gate charge: 945nC
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| IXFX420N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXTQ50N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
товар відсутній
| CLA16E800PN |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 195A
Mounting: THT
Kind of package: tube
Load current: 10A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 195A
Mounting: THT
Kind of package: tube
Load current: 10A
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98 грн |
| 10+ | 84.21 грн |
| IXTY1R6N50D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Mounting: SMD
Gate charge: 23.7nC
Kind of channel: depleted
Gate-source voltage: ±20V
Case: TO252
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 1.6A
On-state resistance: 2.3Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Mounting: SMD
Gate charge: 23.7nC
Kind of channel: depleted
Gate-source voltage: ±20V
Case: TO252
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 1.6A
On-state resistance: 2.3Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
товар відсутній
| LOC117S |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
| LOC117STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
| IXDN630MYI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 656.71 грн |
| 2+ | 435.57 грн |
| 6+ | 412.34 грн |
| 10+ | 411.61 грн |
| IXDN630YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 236 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 622.31 грн |
| 2+ | 437.02 грн |
| 6+ | 413.07 грн |
| LCA125STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 300V AC; max. 300V DC
Mounting: SMT
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Case: DIP6
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 300V AC; max. 300V DC
Mounting: SMT
Control current max.: 50mA
товар відсутній
| IXTQ470P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Drain current: 42A
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Drain current: 42A
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
товар відсутній
| MCO150-16IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2575.23 грн |
| IXTA8N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
товар відсутній
| IXFH10N100 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXFX80N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX80N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFA72N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
на замовлення 83 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 450.31 грн |
| 3+ | 357.89 грн |
| 7+ | 338.29 грн |
| IXFA72N30X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
товар відсутній
| IXFH70N20Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO247-3
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 985.06 грн |
| 2+ | 617.78 грн |
| 4+ | 583.66 грн |