| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MWI150-12T8T | IXYS |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Application: motors; photovoltaics Power dissipation: 690W Mechanical mounting: screw Pulsed collector current: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 150A Topology: IGBT three-phase bridge; NTC thermistor |
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IXTA3N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 70W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 9.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXTY3N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 70W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 9.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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LBA120P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LBA120PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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IXTP6N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Power dissipation: 300W Case: TO220AB On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 41ns |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
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| CLA15E1200NPZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 33A Load current: 15A Gate current: 20/40mA Case: TO263ABHV Mounting: SMD Kind of package: tube Max. forward impulse current: 145A Features of semiconductor devices: two gate polarities |
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IXFH150N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Pulsed drain current: 300A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| IXFT150N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Pulsed drain current: 300A Power dissipation: 735W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 154nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 140ns |
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| IXTX4N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns Reverse recovery time: 420ns Drain-source voltage: 3kV Drain current: 4A Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 139nC Technology: Polar3™ Kind of channel: enhanced Mounting: THT Case: TO247PLUS-HV |
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| IXBOD2-50R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV Type of thyristor: BOD x4 Max. load current: 0.9A Case: BOD Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 5kV |
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IXTR140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -110A Power dissipation: 270W Case: ISOPLUS247™ Gate-source voltage: ±15V On-state resistance: 11mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
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IXBOD2-56R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV Type of thyristor: BOD x4 Max. load current: 0.9A Case: BOD Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 5.6kV |
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IXBOD2-14 | IXYS |
Category: Thyristors - others Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 1.4kV |
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| MIXG450PF1700TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SimBus F Type of module: IGBT Technology: X2PT Collector current: 435A Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV |
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IXKH70N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 70A Power dissipation: 625W Case: TO247-3 On-state resistance: 45mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
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| MCMA1400E1600CD | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 1.1kA Case: ComPack Max. forward voltage: 1.43V Gate current: 600/800mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MDMA1400C1600CC | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 700A x2 Type of module: diode Semiconductor structure: common cathode; double Case: ComPack Max. forward impulse current: 20kA Max. forward voltage: 1.05V Mechanical mounting: screw |
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| MDMA60B800MB | IXYS |
Category: Diode modules Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw Type of module: diode Electrical mounting: THT Mechanical mounting: screw Case: ECO-PAC 1 Max. off-state voltage: 0.8kV Load current: 60A |
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LDA203 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; 3.75kV; DIP8 Mounting: THT Kind of output: transistor Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Case: DIP8 Turn-off time: 20µs Number of channels: 2 CTR@If: 33-1000%@1mA |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IXFY30N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO252 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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IXFK360N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264 Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1670W Polarisation: unipolar Drain current: 360A Reverse recovery time: 150ns Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4mΩ Drain-source voltage: 150V |
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DSP25-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W Mounting: THT Kind of package: tube Load current: 25A Semiconductor structure: double series Max. forward impulse current: 300A Power dissipation: 160W Type of diode: rectifying Case: TO247-3 Max. off-state voltage: 1.6kV Max. forward voltage: 1.23V |
на замовлення 177 шт: термін постачання 21-30 дні (днів) |
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DSP25-16AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Mounting: SMD Load current: 25A Semiconductor structure: double series Max. forward impulse current: 300A Power dissipation: 160W Type of diode: rectifying Case: D3PAK Max. off-state voltage: 1.6kV Max. forward voltage: 1.16V |
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MEK300-06DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: Y4-M6 Max. off-state voltage: 0.6kV Max. forward voltage: 1.19V Load current: 304A Semiconductor structure: common cathode Max. forward impulse current: 2.4kA |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXFK300N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264 Polarisation: unipolar Power dissipation: 1.25kW Kind of package: tube Gate charge: 375nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO264 Reverse recovery time: 170ns Drain-source voltage: 200V Drain current: 300A On-state resistance: 4mΩ Type of transistor: N-MOSFET |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXXK300N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1.14kA Turn-on time: 137ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 460nC Technology: GenX3™; Planar; XPT™ Case: TO264 |
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IXXK300N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1075A Turn-on time: 128ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 438nC Technology: GenX3™; Planar; XPT™ Case: TO264 |
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DSP45-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-3; 270W Mounting: THT Load current: 45A Semiconductor structure: double series Max. forward impulse current: 0.48kA Power dissipation: 270W Kind of package: tube Type of diode: rectifying Case: TO247-3 Max. off-state voltage: 1.2kV Max. forward voltage: 1.23V |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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DSP45-12AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W Power dissipation: 270W Kind of package: tube Type of diode: rectifying Mounting: SMD Case: TO268AAHV Max. off-state voltage: 1.2kV Max. forward voltage: 1.23V Load current: 45A Semiconductor structure: double series Max. forward impulse current: 410A |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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CPC2317N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Manufacturer series: OptoMOS On-state resistance: 16Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Mounting: SMT Operating temperature: -40...85°C Case: SO8 |
на замовлення 576 шт: термін постачання 21-30 дні (днів) |
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| CPC2317NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Manufacturer series: OptoMOS On-state resistance: 16Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Mounting: SMT Operating temperature: -40...85°C Case: SO8 |
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VGB0124AY7A | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV Type of bridge rectifier: braking rectifier assemblies Max. off-state voltage: 1.4kV Load current: 1A Max. forward impulse current: 60A Electrical mounting: screw Mechanical mounting: screw Version: module Case: VG-A |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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MCMA25P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V Max. off-state voltage: 1.6kV Max. forward voltage: 1.52V Load current: 25A Semiconductor structure: double series Gate current: 55/80mA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: TO240AA |
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IXTY1R4N120PHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Case: TO252HV Polarisation: unipolar On-state resistance: 13Ω Type of transistor: N-MOSFET Power dissipation: 86W Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 24.8nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3A Mounting: SMD Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1.4A |
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| MDI300-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 220A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Power dissipation: 1.38kW Technology: NPT Mechanical mounting: screw |
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| MDI550-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: Y3-DCB Power dissipation: 2.75kW Application: motors Technology: NPT Gate-emitter voltage: ±20V Collector current: 460A Pulsed collector current: 800A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: buck chopper |
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| MIXA20WB1200TML | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 20A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 20A Case: E1-Pack Application: fans; for pump; motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 100W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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| MIXA81WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A Application: fans; for pump; motors; photovoltaics Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 225A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 84A |
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| MUBW10-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A Application: motors Pulsed collector current: 18A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E1-Pack Gate-emitter voltage: ±20V Collector current: 8A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 50W Technology: NPT Mechanical mounting: screw |
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| MUBW10-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A Application: motors Pulsed collector current: 20A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 15A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 85W Technology: NPT Mechanical mounting: screw |
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| MUBW10-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 35A Power dissipation: 180W Technology: NPT Mechanical mounting: screw |
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| MUBW100-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A Application: motors Pulsed collector current: 200A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 85A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 410W Technology: NPT Mechanical mounting: screw |
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| MUBW15-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 14A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 20A Power dissipation: 75W Technology: NPT Mechanical mounting: screw |
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| MUBW15-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 18A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 100W Technology: NPT Mechanical mounting: screw |
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MUBW15-12A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 13A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 13A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 26A Power dissipation: 90W Technology: NPT Mechanical mounting: screw |
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MUBW15-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 35A Power dissipation: 180W Technology: NPT Mechanical mounting: screw |
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| MUBW15-12T7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 140W Technology: NPT Mechanical mounting: screw |
товар відсутній |
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| MUBW20-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 17A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 85W Technology: NPT Mechanical mounting: screw |
товар відсутній |
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| MUBW25-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A Technology: NPT Collector current: 21A Power dissipation: 100W Case: E1-Pack Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Application: motors Electrical mounting: Press-in PCB Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT |
товар відсутній |
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| MUBW25-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 50A Power dissipation: 225W Technology: NPT Mechanical mounting: screw |
товар відсутній |
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| MUBW30-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 35A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 180W Technology: NPT Mechanical mounting: screw |
товар відсутній |
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| MUBW30-12A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 21A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 130W Technology: NPT Mechanical mounting: screw |
товар відсутній |
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| MUBW35-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 29A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 130W Technology: NPT Mechanical mounting: screw |
товар відсутній |
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| MUBW50-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 250W Technology: NPT Mechanical mounting: screw |
товар відсутній |
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| MUBW50-12A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 350W Technology: NPT Mechanical mounting: screw |
товар відсутній |
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| MUBW50-12T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 270W Mechanical mounting: screw |
товар відсутній |
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| MUBW50-17T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 53A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 290W Mechanical mounting: screw |
товар відсутній |
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| MUBW75-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 65A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 320W Technology: NPT Mechanical mounting: screw |
товар відсутній |
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| MUBW75-12T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 355W Mechanical mounting: screw |
товар відсутній |
| MWI150-12T8T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Application: motors; photovoltaics
Power dissipation: 690W
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Application: motors; photovoltaics
Power dissipation: 690W
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
товар відсутній
| IXTA3N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.37 грн |
| IXTY3N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
на замовлення 104 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 43.67 грн |
| 11+ | 35.85 грн |
| LBA120P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 640.29 грн |
| 4+ | 270.85 грн |
| 9+ | 255.64 грн |
| LBA120PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| IXTP6N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
на замовлення 353 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 594.28 грн |
| 3+ | 417.85 грн |
| 6+ | 395.4 грн |
| 50+ | 394.68 грн |
| 250+ | 381.65 грн |
| CLA15E1200NPZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 15A
Gate current: 20/40mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 145A
Features of semiconductor devices: two gate polarities
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 15A
Gate current: 20/40mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 145A
Features of semiconductor devices: two gate polarities
товар відсутній
| IXFH150N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1066.89 грн |
| 2+ | 798.78 грн |
| 3+ | 754.6 грн |
| IXFT150N25X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 140ns
товар відсутній
| IXTX4N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Reverse recovery time: 420ns
Drain-source voltage: 3kV
Drain current: 4A
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 139nC
Technology: Polar3™
Kind of channel: enhanced
Mounting: THT
Case: TO247PLUS-HV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Reverse recovery time: 420ns
Drain-source voltage: 3kV
Drain current: 4A
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 139nC
Technology: Polar3™
Kind of channel: enhanced
Mounting: THT
Case: TO247PLUS-HV
товар відсутній
| IXBOD2-50R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5kV
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5kV
товар відсутній
| IXTR140P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
товар відсутній
| IXBOD2-56R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5.6kV
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5.6kV
товар відсутній
| IXBOD2-14 |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.4kV
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.4kV
товар відсутній
| MIXG450PF1700TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
товар відсутній
| IXKH70N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
| MCMA1400E1600CD |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Gate current: 600/800mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Gate current: 600/800mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MDMA1400C1600CC |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 700A x2
Type of module: diode
Semiconductor structure: common cathode; double
Case: ComPack
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 700A x2
Type of module: diode
Semiconductor structure: common cathode; double
Case: ComPack
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Mechanical mounting: screw
товар відсутній
| MDMA60B800MB |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Type of module: diode
Electrical mounting: THT
Mechanical mounting: screw
Case: ECO-PAC 1
Max. off-state voltage: 0.8kV
Load current: 60A
Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Type of module: diode
Electrical mounting: THT
Mechanical mounting: screw
Case: ECO-PAC 1
Max. off-state voltage: 0.8kV
Load current: 60A
товар відсутній
| LDA203 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; 3.75kV; DIP8
Mounting: THT
Kind of output: transistor
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Case: DIP8
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; 3.75kV; DIP8
Mounting: THT
Kind of output: transistor
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Case: DIP8
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.62 грн |
| IXFY30N25X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 382.93 грн |
| 4+ | 273.74 грн |
| 9+ | 259.26 грн |
| IXFK360N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Drain current: 360A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Drain current: 360A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain-source voltage: 150V
товар відсутній
| DSP25-16A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Kind of package: tube
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Kind of package: tube
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
на замовлення 177 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 365.77 грн |
| 3+ | 305.61 грн |
| 4+ | 243.33 грн |
| 10+ | 230.29 грн |
| DSP25-16AT-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: D3PAK
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: D3PAK
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
товар відсутній
| MEK300-06DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y4-M6
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y4-M6
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4705.08 грн |
| IXFK300N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Polarisation: unipolar
Power dissipation: 1.25kW
Kind of package: tube
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 170ns
Drain-source voltage: 200V
Drain current: 300A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Polarisation: unipolar
Power dissipation: 1.25kW
Kind of package: tube
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 170ns
Drain-source voltage: 200V
Drain current: 300A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1856.92 грн |
| 2+ | 1630.14 грн |
| IXXK300N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
Case: TO264
товар відсутній
| IXXK300N60C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Case: TO264
товар відсутній
| DSP45-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-3; 270W
Mounting: THT
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-3; 270W
Mounting: THT
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 343.15 грн |
| 3+ | 282.43 грн |
| 9+ | 267.22 грн |
| 10+ | 257.09 грн |
| DSP45-12AZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: SMD
Case: TO268AAHV
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 410A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: SMD
Case: TO268AAHV
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: double series
Max. forward impulse current: 410A
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 470.27 грн |
| 3+ | 344.71 грн |
| 7+ | 325.88 грн |
| CPC2317N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
On-state resistance: 16Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
On-state resistance: 16Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
на замовлення 576 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.99 грн |
| 10+ | 90.52 грн |
| 26+ | 85.45 грн |
| CPC2317NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
On-state resistance: 16Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
On-state resistance: 16Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
товар відсутній
| VGB0124AY7A |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7578.98 грн |
| MCMA25P1600TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
товар відсутній
| IXTY1R4N120PHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252HV
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252HV
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
товар відсутній
| MDI300-12A4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MDI550-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Power dissipation: 2.75kW
Application: motors
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 460A
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Power dissipation: 2.75kW
Application: motors
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 460A
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
товар відсутній
| MIXA20WB1200TML |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 20A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Application: fans; for pump; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 100W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 20A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Application: fans; for pump; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 100W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| MIXA81WB1200TEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: fans; for pump; motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: fans; for pump; motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
товар відсутній
| MUBW10-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Application: motors
Pulsed collector current: 18A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E1-Pack
Gate-emitter voltage: ±20V
Collector current: 8A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 50W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Application: motors
Pulsed collector current: 18A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E1-Pack
Gate-emitter voltage: ±20V
Collector current: 8A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 50W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW10-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Application: motors
Pulsed collector current: 20A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 85W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Application: motors
Pulsed collector current: 20A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 85W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW10-12A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW100-06A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Application: motors
Pulsed collector current: 200A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 85A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 410W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Application: motors
Pulsed collector current: 200A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 85A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 410W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-12A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 13A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 13A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 26A
Power dissipation: 90W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 13A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 13A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 26A
Power dissipation: 90W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-12A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-12T7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW20-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW25-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Technology: NPT
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Technology: NPT
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| MUBW25-12A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW30-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW30-12A6K |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW35-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW50-06A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW50-12A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW50-12T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
товар відсутній
| MUBW50-17T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
товар відсутній
| MUBW75-06A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW75-12T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
товар відсутній