IXFR32N80Q3 IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.3Ω
Drain current: 24A
Drain-source voltage: 800V
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.3Ω
Drain current: 24A
Drain-source voltage: 800V
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
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Технічний опис IXFR32N80Q3 IXYS
Description: MOSFET N-CH 800V 24A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 16A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 25 V.
Інші пропозиції IXFR32N80Q3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFR32N80Q3 | Виробник : IXYS |
Description: MOSFET N-CH 800V 24A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 16A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 25 V |
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IXFR32N80Q3 | Виробник : IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A |
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IXFR32N80Q3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube On-state resistance: 0.3Ω Drain current: 24A Drain-source voltage: 800V Power dissipation: 500W Polarisation: unipolar Gate charge: 0.14µC Kind of channel: enhanced Type of transistor: N-MOSFET |
товар відсутній |