| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFH70N30Q3 | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3 Drain-source voltage: 300V Drain current: 70A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Kind of package: tube Gate charge: 98nC Kind of channel: enhanced Mounting: THT Case: TO247-3 |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IXFH72N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Drain current: 72A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 100ns Drain-source voltage: 300V |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IXFP72N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB Reverse recovery time: 84ns Drain-source voltage: 200V Drain current: 72A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube Gate charge: 55nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220AB |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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IXFP72N20X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP Reverse recovery time: 84ns Drain-source voltage: 200V Drain current: 72A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: tube Gate charge: 55nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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IXFP72N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain current: 72A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 100ns Drain-source voltage: 300V |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFP72N30X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain current: 72A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 100ns Drain-source voltage: 300V |
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IXFQ72N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P Reverse recovery time: 84ns Drain-source voltage: 200V Drain current: 72A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube Gate charge: 55nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO3P |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IXFQ72N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P Case: TO3P Mounting: THT Kind of package: tube Drain current: 72A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 100ns Drain-source voltage: 300V |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXFT70N20Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268 Drain-source voltage: 200V Drain current: 70A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhanced Mounting: SMD Case: TO268 |
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IXFT70N30Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268 Drain-source voltage: 300V Drain current: 70A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Kind of package: tube Gate charge: 98nC Kind of channel: enhanced Mounting: SMD Case: TO268 |
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IXTA1R4N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 86W Case: TO263 Gate-source voltage: ±30V On-state resistance: 13Ω Mounting: SMD Gate charge: 24.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
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IXTA1R6N100D2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 27nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 970ns |
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IXTH2R4N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 2.4A Pulsed drain current: 6A Power dissipation: 125W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 7.5Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 920ns |
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IXTP1R4N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 86W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 13Ω Mounting: THT Gate charge: 24.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
товар відсутній |
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IXTP2R4N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 2.4A Pulsed drain current: 6A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 7.5Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 920ns |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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IXTQ52N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns Case: TO3P Mounting: THT Kind of package: tube Drain current: 52A On-state resistance: 73mΩ Type of transistor: N-MOSFET Power dissipation: 400W Polarisation: unipolar Gate charge: 110nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 250ns Drain-source voltage: 300V |
на замовлення 217 шт: термін постачання 21-30 дні (днів) |
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IXTT52N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Drain current: 52A On-state resistance: 73mΩ Type of transistor: N-MOSFET Power dissipation: 400W Polarisation: unipolar Gate charge: 110nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 250ns Drain-source voltage: 300V |
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IXTT69N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO268 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 69A Power dissipation: 500W Case: TO268 Gate-source voltage: ±20V On-state resistance: 49mΩ Mounting: SMD Gate charge: 156nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 330ns |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXTY1R4N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 13Ω Mounting: SMD Gate charge: 24.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
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IXFB300N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Power dissipation: 1.5kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 279nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| MIXG240W1200PZTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 233A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: X2PT Topology: IGBT three-phase bridge; NTC thermistor; shunt resistor Case: E3-Pack |
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DMA10I1600PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; TO220AC; 100W Mounting: THT Case: TO220AC Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 1.6kV Max. forward voltage: 1.21V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 120A Power dissipation: 100W Type of diode: rectifying |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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| DMA10P1200HR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 120A; ISO247™ Case: ISO247™ Mounting: THT Kind of package: tube Semiconductor structure: double series Max. off-state voltage: 1.2kV Max. forward impulse current: 120A Type of diode: rectifying Max. forward voltage: 0.81V Load current: 10A |
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DMA10P1600HR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; ISO247™ Mounting: THT Kind of package: tube Type of diode: rectifying Case: ISO247™ Max. off-state voltage: 1.6kV Load current: 10A Semiconductor structure: double series Max. forward impulse current: 120A |
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DSA10C150PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; 30W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 5A x2 Power dissipation: 30W Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward impulse current: 150A Max. forward voltage: 0.71V |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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| DSA120X150LB-TRR | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 75Ax2; SMPD; reel,tape; 185W Mounting: SMD Case: SMPD Power dissipation: 185W Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 150V Max. forward voltage: 0.74V Load current: 75A x2 Semiconductor structure: double independent Max. forward impulse current: 700A |
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MCO25-12IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 32A; SOT227B; screw Kind of package: bulk Max. off-state voltage: 1.2kV Max. forward voltage: 1.55V Load current: 32A Semiconductor structure: single thyristor Gate current: 55/80mA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: SOT227B |
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MCO25-16IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 32A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 32A Case: SOT227B Max. forward voltage: 1.55V Gate current: 55/80mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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LCB110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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IXTP32P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB Mounting: THT Kind of package: tube Drain-source voltage: -50V Drain current: -32A On-state resistance: 39mΩ Type of transistor: P-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 46nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Case: TO220AB Reverse recovery time: 26ns |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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IXTP32P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns Mounting: THT Kind of package: tube Drain-source voltage: -200V Drain current: -32A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 185nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Case: TO220AB Reverse recovery time: 190ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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DPG20C200PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Mounting: THT Case: TO220AB Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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DPG20C200PN | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Kind of package: tube Power dissipation: 35W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: TO220FP Max. off-state voltage: 200V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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DPG20C400PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W Mounting: THT Case: TO220AB Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 0.4kV Max. forward voltage: 1.32V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W |
на замовлення 183 шт: термін постачання 21-30 дні (днів) |
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| DPG20C400PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V Mounting: SMD Case: TO263AB Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Max. off-state voltage: 0.4kV Max. forward voltage: 1.51V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 150A Power dissipation: 65W |
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DPG20C400PN | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W Kind of package: tube Power dissipation: 35W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: TO220FP Max. off-state voltage: 0.4kV Max. forward voltage: 1.03V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 150A |
на замовлення 168 шт: термін постачання 21-30 дні (днів) |
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MMIX1F40N110P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.1kV Drain current: 24A Pulsed drain current: 100A Power dissipation: 500W Case: SMPD Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 310nC Kind of channel: enhanced Reverse recovery time: 300ns |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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LDA102 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6 Mounting: THT Case: DIP6 Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-350%@1mA Type of optocoupler: optocoupler |
на замовлення 310 шт: термін постачання 21-30 дні (днів) |
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| LDA102S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 50-350%@1mA; 50mA Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 50-350%@1mA Trigger current: 50mA Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs |
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LDA102STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 50-350%@1mA Trigger current: 50mA Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs |
на замовлення 999 шт: термін постачання 21-30 дні (днів) |
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IXFX300N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 300A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 170ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXDF604PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 558 шт: термін постачання 21-30 дні (днів) |
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IXDI604PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 274 шт: термін постачання 21-30 дні (днів) |
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DSA15I45PA | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15A; 85W; TO220AC; tube Mounting: THT Case: TO220AC Power dissipation: 85W Kind of package: tube Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward voltage: 0.63V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 340A |
на замовлення 687 шт: термін постачання 21-30 дні (днів) |
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DSA15IM45IB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15A; 85W; TO262; tube Mounting: THT Case: TO262 Power dissipation: 85W Kind of package: tube Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward voltage: 0.63V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 340A |
на замовлення 571 шт: термін постачання 21-30 дні (днів) |
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IXTP170N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 360W Case: TO220AB On-state resistance: 5.4mΩ Mounting: THT Gate charge: 109nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 63ns |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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| IXYL40N250CV1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™ Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 40A Power dissipation: 577W Case: ISOPLUS i5-pac™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 0.27µC Kind of package: tube Turn-on time: 43ns Turn-off time: 505ns Features of semiconductor devices: high voltage |
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IXYX40N250CHV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 40A Power dissipation: 1.5kW Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 380A Mounting: THT Gate charge: 0.27µC Kind of package: tube Turn-on time: 43ns Turn-off time: 505ns Features of semiconductor devices: high voltage |
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IXFK240N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 240A Power dissipation: 1.25kW Case: TO264 On-state resistance: 5mΩ Mounting: THT Gate charge: 345nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 177ns |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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IXFX140N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 140A Power dissipation: 960W Case: PLUS247™ On-state resistance: 17mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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| IXFZ140N25T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 100A Power dissipation: 445W Case: DE475 On-state resistance: 17mΩ Mounting: SMD Gate charge: 255nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXXX200N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 315nC Collector-emitter voltage: 600V |
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VBE60-06A | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A Technology: HiPerFRED™ Max. off-state voltage: 0.6kV Load current: 60A Case: SOT227B Max. forward impulse current: 250A Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Leads: M4 screws |
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VBE60-12A | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A Technology: HiPerFRED™ Max. off-state voltage: 1.2kV Load current: 60A Case: SOT227B Max. forward impulse current: 200A Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Leads: M4 screws |
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| VBO160-08NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 800V; If: 160A; Ifsm: 2.8kA Max. off-state voltage: 0.8kV Load current: 160A Case: PWS-E Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Leads: M6 screws |
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| VBO160-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA Max. off-state voltage: 1.2kV Load current: 160A Case: PWS-E Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Leads: M6 screws |
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| VBO160-16NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 160A; Ifsm: 2.8kA Max. off-state voltage: 1.6kV Load current: 160A Case: PWS-E Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Leads: M6 screws |
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| VBO160-18NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 160A; Ifsm: 2.8kA Max. off-state voltage: 1.8kV Load current: 160A Case: PWS-E Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Leads: M6 screws |
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DH2x60-18A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw Max. off-state voltage: 1.8kV Semiconductor structure: double independent Case: SOT227B Type of module: diode Technology: Sonic FRD™ Max. forward voltage: 2.71V Load current: 60A x2 Max. forward impulse current: 700A Electrical mounting: screw Mechanical mounting: screw |
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| IXBOD2-09 | IXYS |
Category: Thyristors - others Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 900V Kind of package: bulk Case: FP-Case Mounting: THT Technology: 2nd Gen Breakover voltage: 900V Type of thyristor: BOD Max. load current: 0.9A |
товар відсутній |
| IXFH70N30Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1045.26 грн |
| 3+ | 917.6 грн |
| IXFH72N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 749.74 грн |
| 2+ | 495.1 грн |
| 5+ | 467.51 грн |
| IXFP72N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO220AB
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 494.88 грн |
| 3+ | 347.73 грн |
| 7+ | 328.86 грн |
| IXFP72N20X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 36W; TO220FP
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 494.88 грн |
| 3+ | 347.73 грн |
| 7+ | 328.86 грн |
| IXFP72N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 544.13 грн |
| 3+ | 407.26 грн |
| 6+ | 385.48 грн |
| IXFP72N30X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
товар відсутній
| IXFQ72N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO3P
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 548.04 грн |
| 3+ | 384.75 грн |
| 6+ | 364.43 грн |
| IXFQ72N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Case: TO3P
Mounting: THT
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Case: TO3P
Mounting: THT
Kind of package: tube
Drain current: 72A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 100ns
Drain-source voltage: 300V
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 725.5 грн |
| 2+ | 479.13 грн |
| 5+ | 452.99 грн |
| IXFT70N20Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
товар відсутній
| IXFT70N30Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
товар відсутній
| IXTA1R4N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
| IXTA1R6N100D2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 970ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 970ns
товар відсутній
| IXTH2R4N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Pulsed drain current: 6A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 920ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Pulsed drain current: 6A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 920ns
товар відсутній
| IXTP1R4N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: THT
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: THT
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
| IXTP2R4N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Pulsed drain current: 6A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 920ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Pulsed drain current: 6A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 7.5Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 920ns
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 364.32 грн |
| 3+ | 299.09 грн |
| 4+ | 273.68 грн |
| 9+ | 258.44 грн |
| 50+ | 251.18 грн |
| IXTQ52N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Case: TO3P
Mounting: THT
Kind of package: tube
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Gate charge: 110nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO3P; 250ns
Case: TO3P
Mounting: THT
Kind of package: tube
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Gate charge: 110nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
на замовлення 217 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 378.39 грн |
| 3+ | 284.57 грн |
| 9+ | 269.33 грн |
| 30+ | 260.62 грн |
| IXTT52N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Gate charge: 110nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Gate charge: 110nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 250ns
Drain-source voltage: 300V
товар відсутній
| IXTT69N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 330ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 330ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 483.93 грн |
| IXTY1R4N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
| IXFB300N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1901.32 грн |
| MIXG240W1200PZTEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor; shunt resistor
Case: E3-Pack
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor; shunt resistor
Case: E3-Pack
товар відсутній
| DMA10I1600PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; TO220AC; 100W
Mounting: THT
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; TO220AC; 100W
Mounting: THT
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Power dissipation: 100W
Type of diode: rectifying
на замовлення 400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 106.32 грн |
| 5+ | 88.57 грн |
| 10+ | 78.4 грн |
| 12+ | 71.14 грн |
| 33+ | 66.79 грн |
| 250+ | 65.34 грн |
| DMA10P1200HR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 120A; ISO247™
Case: ISO247™
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Max. forward impulse current: 120A
Type of diode: rectifying
Max. forward voltage: 0.81V
Load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 120A; ISO247™
Case: ISO247™
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Max. forward impulse current: 120A
Type of diode: rectifying
Max. forward voltage: 0.81V
Load current: 10A
товар відсутній
| DMA10P1600HR |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; ISO247™
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Case: ISO247™
Max. off-state voltage: 1.6kV
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 10A; tube; Ifsm: 120A; ISO247™
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Case: ISO247™
Max. off-state voltage: 1.6kV
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 120A
товар відсутній
| DSA10C150PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; 30W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Power dissipation: 30W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 150A
Max. forward voltage: 0.71V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; 30W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Power dissipation: 30W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 150A
Max. forward voltage: 0.71V
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 82.09 грн |
| 6+ | 68.97 грн |
| 10+ | 61.71 грн |
| DSA120X150LB-TRR |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 75Ax2; SMPD; reel,tape; 185W
Mounting: SMD
Case: SMPD
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.74V
Load current: 75A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 75Ax2; SMPD; reel,tape; 185W
Mounting: SMD
Case: SMPD
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.74V
Load current: 75A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
товар відсутній
| MCO25-12IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 32A; SOT227B; screw
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.55V
Load current: 32A
Semiconductor structure: single thyristor
Gate current: 55/80mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: SOT227B
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 32A; SOT227B; screw
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.55V
Load current: 32A
Semiconductor structure: single thyristor
Gate current: 55/80mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: SOT227B
товар відсутній
| MCO25-16IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 32A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 32A
Case: SOT227B
Max. forward voltage: 1.55V
Gate current: 55/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 32A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 32A
Case: SOT227B
Max. forward voltage: 1.55V
Gate current: 55/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| LCB110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| IXTP32P05T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: -50V
Drain current: -32A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: TO220AB
Reverse recovery time: 26ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: -50V
Drain current: -32A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 46nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: TO220AB
Reverse recovery time: 26ns
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.12 грн |
| 4+ | 111.8 грн |
| 10+ | 87.84 грн |
| 27+ | 82.76 грн |
| IXTP32P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Kind of package: tube
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: TO220AB
Reverse recovery time: 190ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Kind of package: tube
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: TO220AB
Reverse recovery time: 190ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 541.78 грн |
| 3+ | 352.81 грн |
| 7+ | 352.09 грн |
| DPG20C200PB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
на замовлення 113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.73 грн |
| 10+ | 87.11 грн |
| 12+ | 74.77 грн |
| 32+ | 70.42 грн |
| DPG20C200PN |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Kind of package: tube
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Kind of package: tube
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.77 грн |
| 9+ | 102.36 грн |
| 24+ | 96.55 грн |
| DPG20C400PB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
на замовлення 183 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.79 грн |
| 3+ | 168.42 грн |
| 7+ | 126.32 грн |
| 19+ | 119.78 грн |
| DPG20C400PC-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
товар відсутній
| DPG20C400PN |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Kind of package: tube
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10Ax2; tube; Ifsm: 150A; TO220FP; 35W
Kind of package: tube
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 150A
на замовлення 168 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.08 грн |
| 7+ | 123.41 грн |
| 19+ | 116.88 грн |
| MMIX1F40N110P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhanced
Reverse recovery time: 300ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3599.38 грн |
| LDA102 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Mounting: THT
Case: DIP6
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Mounting: THT
Case: DIP6
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Type of optocoupler: optocoupler
на замовлення 310 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 15.64 грн |
| LDA102S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 50-350%@1mA; 50mA
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 50-350%@1mA; 50mA
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
товар відсутній
| LDA102STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 50mA
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
на замовлення 999 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.34 грн |
| 8+ | 49 грн |
| 25+ | 38.26 грн |
| 33+ | 25.99 грн |
| 90+ | 24.54 грн |
| IXFX300N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 170ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 170ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1861.45 грн |
| 2+ | 1634.84 грн |
| 3+ | 1634.12 грн |
| 30+ | 1579.67 грн |
| IXDF604PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 558 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.63 грн |
| 5+ | 84.94 грн |
| 10+ | 76.22 грн |
| 11+ | 75.5 грн |
| 31+ | 71.87 грн |
| 50+ | 71.14 грн |
| IXDI604PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 274 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.18 грн |
| 10+ | 88.57 грн |
| 12+ | 75.5 грн |
| 31+ | 71.87 грн |
| DSA15I45PA |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; 85W; TO220AC; tube
Mounting: THT
Case: TO220AC
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 340A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; 85W; TO220AC; tube
Mounting: THT
Case: TO220AC
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 340A
на замовлення 687 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.83 грн |
| 7+ | 58.8 грн |
| 10+ | 51.54 грн |
| 19+ | 46.46 грн |
| 50+ | 43.56 грн |
| DSA15IM45IB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; 85W; TO262; tube
Mounting: THT
Case: TO262
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 340A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; 85W; TO262; tube
Mounting: THT
Case: TO262
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.63V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 340A
на замовлення 571 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.83 грн |
| 7+ | 60.25 грн |
| 10+ | 51.54 грн |
| 19+ | 46.46 грн |
| 50+ | 43.56 грн |
| IXTP170N075T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.68 грн |
| 3+ | 183.67 грн |
| 6+ | 148.82 грн |
| 16+ | 140.83 грн |
| IXYL40N250CV1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 577W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 577W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
товар відсутній
| IXYX40N250CHV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
товар відсутній
| IXFK240N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 177ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 177ns
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1808.29 грн |
| 2+ | 1588.38 грн |
| 3+ | 1587.66 грн |
| IXFX140N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFZ140N25T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXXX200N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 315nC
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 315nC
Collector-emitter voltage: 600V
товар відсутній
| VBE60-06A |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
Load current: 60A
Case: SOT227B
Max. forward impulse current: 250A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M4 screws
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
Load current: 60A
Case: SOT227B
Max. forward impulse current: 250A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M4 screws
товар відсутній
| VBE60-12A |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M4 screws
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M4 screws
товар відсутній
| VBO160-08NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 160A; Ifsm: 2.8kA
Max. off-state voltage: 0.8kV
Load current: 160A
Case: PWS-E
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M6 screws
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 160A; Ifsm: 2.8kA
Max. off-state voltage: 0.8kV
Load current: 160A
Case: PWS-E
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M6 screws
товар відсутній
| VBO160-12NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Max. off-state voltage: 1.2kV
Load current: 160A
Case: PWS-E
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M6 screws
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Max. off-state voltage: 1.2kV
Load current: 160A
Case: PWS-E
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M6 screws
товар відсутній
| VBO160-16NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 160A; Ifsm: 2.8kA
Max. off-state voltage: 1.6kV
Load current: 160A
Case: PWS-E
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M6 screws
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 160A; Ifsm: 2.8kA
Max. off-state voltage: 1.6kV
Load current: 160A
Case: PWS-E
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M6 screws
товар відсутній
| VBO160-18NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 160A; Ifsm: 2.8kA
Max. off-state voltage: 1.8kV
Load current: 160A
Case: PWS-E
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M6 screws
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 160A; Ifsm: 2.8kA
Max. off-state voltage: 1.8kV
Load current: 160A
Case: PWS-E
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M6 screws
товар відсутній
| DH2x60-18A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.8kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.71V
Load current: 60A x2
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.8kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.71V
Load current: 60A x2
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній