| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MCC95-18io8B | IXYS |
 Category: Thyristor modulesDescription: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.7V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
|||||||||
| MDMA120U1600VA | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; 1.6kV; If: 120A; Ifsm: 850A; module Max. off-state voltage: 1.6kV Load current: 120A Case: V1-A-Pack Max. forward impulse current: 850A Version: module Mechanical mounting: screw Leads: connectors 2,0x0,5mm Electrical mounting: FASTON connectors Type of bridge rectifier: three-phase |
товар відсутній |
||||||||||
 |
CPC1510G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC Mounting: THT Control current max.: 50mA Kind of output: MOSFET On-state resistance: 15Ω Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 0.2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
|
||||||||
 |
CPC1510GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC Mounting: SMT Control current max.: 50mA Kind of output: MOSFET On-state resistance: 15Ω Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Contacts configuration: SPST-NO Max. operating current: 0.2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
|
||||||||
 |
DSS2X101-015A | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 150V Load current: 100A x2 Case: SOT227B Max. forward voltage: 0.99V Max. forward impulse current: 1.4kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
товар відсутній |
|||||||||
|
|
IXTN102N65X2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A Case: SOT227B Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 152nC Technology: X2-Class Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 204A Semiconductor structure: single transistor Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 76A On-state resistance: 30mΩ |
товар відсутній |
|||||||||
 |
IXFR90N30 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 75A Power dissipation: 417W Case: ISOPLUS247™ On-state resistance: 36mΩ Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||
 |
IXTA75N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 74nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
товар відсутній |
|||||||||
 |
IXTQ130N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Type of transistor: N-MOSFET Technology: Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Pulsed drain current: 320A Power dissipation: 830W Case: TO3P Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 150ns |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
|
||||||||
 |
IXTQ75N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
товар відсутній |
|||||||||
 |
DSEC16-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W Mounting: THT Case: TO220AB Kind of package: tube Max. forward impulse current: 40A Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 1.2kV Max. forward voltage: 2.94V Load current: 8A x2 Semiconductor structure: common cathode; double Reverse recovery time: 40ns Power dissipation: 60W |
товар відсутній |
|||||||||
| DSEC16-12AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W Mounting: SMD Case: D2PAK Kind of package: tube Max. forward impulse current: 40A Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Max. off-state voltage: 1.2kV Max. forward voltage: 1.96V Load current: 8A x2 Semiconductor structure: common cathode; double Reverse recovery time: 40ns Power dissipation: 60W |
товар відсутній |
||||||||||
| MDD142-08N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
||||||||||
| MDD142-12N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
||||||||||
| MDD142-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 165A Case: Y4-M6 Max. forward voltage: 1.05V Max. forward impulse current: 4.7kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
||||||||||
 |
DSEP15-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 110A Case: TO220AC Max. forward voltage: 1.35V Heatsink thickness: 1.14...1.39mm Power dissipation: 95W Reverse recovery time: 35ns Technology: HiPerFRED™ |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
|
||||||||
| DMA90U1800LB-TUB | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A Max. off-state voltage: 1.8kV Max. forward impulse current: 350A Case: SMPD Electrical mounting: SMT Type of bridge rectifier: three-phase Max. forward voltage: 1.26V Load current: 90A |
товар відсутній |
||||||||||
| VBE20-20NO1 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 2kV; If: 20A; Ifsm: 65A; FRED Version: module Technology: FRED Mechanical mounting: screw Leads: connectors 2,0x0,5mm Max. off-state voltage: 2kV Electrical mounting: FASTON connectors Load current: 20A Case: V1-A-Pack Type of bridge rectifier: single-phase Max. forward impulse current: 65A |
товар відсутній |
||||||||||
 |
DSA1-18D | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 2.3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Kind of package: tube Max. forward impulse current: 110A Case: FP-Case Max. forward voltage: 1.34V |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
|
||||||||
|
|
MCMA85P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 85A Case: TO240AA Max. forward voltage: 1.51V Max. forward impulse current: 1.28kA Electrical mounting: screw Max. load current: 135A Mechanical mounting: screw Kind of package: bulk Gate current: 95/200mA |
товар відсутній |
|||||||||
 |
XBB170 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; THT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
|
||||||||
 |
XBB170P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 248 шт: термін постачання 21-30 дні (днів) |
|
||||||||
| XBB170PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
товар відсутній |
||||||||||
 |
XBB170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
|
||||||||
|
|
IXTA80N12T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns Mounting: SMD On-state resistance: 17mΩ Reverse recovery time: 90ns Power dissipation: 325W Gate charge: 80nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 80A Kind of channel: enhanced Drain-source voltage: 120V Type of transistor: N-MOSFET Kind of package: tube Case: TO263 |
товар відсутній |
|||||||||
 |
CPC2014N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC Body dimensions: 9.35x3.81x2.18mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT Turn-off time: 1ms Turn-on time: 2ms On-state resistance: 2Ω Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO x2 Max. operating current: 0.4A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Case: SO8 |
товар відсутній |
|||||||||
| CPC2014NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC Body dimensions: 9.35x3.81x2.18mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT Turn-off time: 1ms Turn-on time: 2ms On-state resistance: 2Ω Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO x2 Max. operating current: 0.4A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Case: SO8 |
товар відсутній |
||||||||||
 |
CPC2017N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω Body dimensions: 9.35x3.81x2.18mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT Turn-off time: 3ms Turn-on time: 3ms On-state resistance: 16Ω Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50000mA Case: SO8 |
товар відсутній |
|||||||||
| CPC2017NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC Body dimensions: 9.35x3.81x2.18mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT Turn-off time: 3ms Turn-on time: 3ms On-state resistance: 16Ω Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Case: SO8 |
товар відсутній |
||||||||||
 |
CPC2030N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
|
||||||||
| CPC2030NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
товар відсутній |
||||||||||
 |
IXFT120N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns Mounting: SMD Case: TO268HV Drain current: 120A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 122nC Kind of channel: enhanced Reverse recovery time: 140ns Drain-source voltage: 250V |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
|
||||||||
|
|
IXFR180N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
товар відсутній |
|||||||||
 |
IXTA3N120HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263HV Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 700ns |
товар відсутній |
|||||||||
 |
IXTH3N120 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO247-3 Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 700ns |
товар відсутній |
|||||||||
|
|
IXTA3N120 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 700ns |
товар відсутній |
|||||||||
 |
IXTP3N120 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 700ns |
товар відсутній |
|||||||||
 |
CPC1998J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; THT Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 20.88x19.91x5.03mm Operating temperature: -40...85°C Insulation voltage: 2.5kV Switching method: zero voltage switching Switched voltage: max. 240V AC Case: i4-pac Max. operating current: 5A Control current max.: 150mA |
товар відсутній |
|||||||||
|
|
IXTA230N04T4 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 340W Case: TO263 On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 32ns |
товар відсутній |
|||||||||
|
|
IXTP230N04T4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 340W Case: TO220AB On-state resistance: 2.9mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 32ns |
товар відсутній |
|||||||||
|
|
IXFH170N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
товар відсутній |
|||||||||
 |
IXFK170N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO264 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
|
||||||||
|
|
IXTQ170N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3P Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO3P Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|
||||||||
 |
DSEC120-12AK | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W Mounting: THT Max. forward impulse current: 0.5kA Power dissipation: 330W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Case: TO264 Max. off-state voltage: 1.2kV Max. forward voltage: 2.66V Load current: 60A x2 Semiconductor structure: common cathode; double Reverse recovery time: 40ns |
товар відсутній |
|||||||||
| MMJX1H40N150 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT) Type of thyristor: thyristor Mounting: SMD Case: SMPD Max. off-state voltage: 1.5kV Max. forward impulse current: 15.5kA |
товар відсутній |
||||||||||
|
|
MDD56-16N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 71A Case: TO240AA Max. forward voltage: 1.14V Max. forward impulse current: 1.19kA Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw |
товар відсутній |
|||||||||
 |
PS2601 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; THT Switching method: zero voltage switching Operating temperature: -40...85°C Switched voltage: max. 600V AC Body dimensions: 19.2x6.35x3.3mm Mounting: THT Insulation voltage: 3.75kV Case: SIP4 Max. operating current: 1A Control current max.: 100mA Type of relay: solid state Relay variant: 1-phase |
товар відсутній |
|||||||||
|
|
MDD56-08N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 71A Case: TO240AA Max. forward voltage: 1.14V Max. forward impulse current: 1.4kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
|||||||||
|
|
MDD56-14N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 71A Case: TO240AA Max. forward voltage: 1.14V Max. forward impulse current: 1.4kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
|||||||||
|
|
MDD56-18N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 71A Case: TO240AA Max. forward voltage: 1.14V Max. forward impulse current: 1.4kA Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw |
товар відсутній |
|||||||||
 |
IXFX32N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||
|
|
IXTA140N12T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 140A Power dissipation: 577W Case: TO263 On-state resistance: 10mΩ Mounting: SMD Gate charge: 174nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 65ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
|
||||||||
| IXYH12N250C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Type of transistor: IGBT Power dissipation: 310W Features of semiconductor devices: high voltage Gate charge: 56nC Technology: XPT™ Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 48A Turn-on time: 12ns Turn-off time: 167ns |
товар відсутній |
||||||||||
 |
IXYH12N250CV1HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV Case: TO247HV Mounting: THT Kind of package: tube Type of transistor: IGBT Power dissipation: 310W Features of semiconductor devices: high voltage Gate charge: 56nC Technology: XPT™ Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 80A Turn-on time: 32ns Turn-off time: 333ns |
товар відсутній |
|||||||||
|
|
MCMA65PD1200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.2kV Max. load current: 105A Max. forward voltage: 1.17V Load current: 65A Semiconductor structure: double series Gate current: 95/200mA Max. forward impulse current: 1.15kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
|||||||||
|
|
MCMA65PD1600TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.6kV Max. load current: 105A Max. forward voltage: 1.17V Load current: 65A Semiconductor structure: double series Gate current: 95/200mA Max. forward impulse current: 1.15kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
|||||||||
| MCMA265PD1600KB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 268A Case: Y1-CU Max. forward voltage: 1.15V Max. forward impulse current: 8.5kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 421A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товар відсутній |
||||||||||
| VBO50-18NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 45A; Ifsm: 720A Type of bridge rectifier: single-phase Max. off-state voltage: 1.8kV Load current: 45A Max. forward impulse current: 720A Electrical mounting: screw Version: module Leads: M5 screws Case: PWS-B Mechanical mounting: screw |
товар відсутній |
||||||||||
| VUO50-18NO3 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 60A; Ifsm: 500A Type of bridge rectifier: three-phase Max. off-state voltage: 1.8kV Load current: 60A Max. forward impulse current: 0.5kA Electrical mounting: FASTON connectors Version: module Max. forward voltage: 1.07V Leads: connectors 6,3x0,8mm Case: FO-F-B Mechanical mounting: screw |
товар відсутній |
||||||||||
|
|
IXFH96N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3 Mounting: THT Power dissipation: 600W Gate charge: 145nC Polarisation: unipolar Drain current: 96A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 24mΩ |
товар відсутній |
| MCC95-18io8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MDMA120U1600VA |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 120A; Ifsm: 850A; module
Max. off-state voltage: 1.6kV
Load current: 120A
Case: V1-A-Pack
Max. forward impulse current: 850A
Version: module
Mechanical mounting: screw
Leads: connectors 2,0x0,5mm
Electrical mounting: FASTON connectors
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 120A; Ifsm: 850A; module
Max. off-state voltage: 1.6kV
Load current: 120A
Case: V1-A-Pack
Max. forward impulse current: 850A
Version: module
Mechanical mounting: screw
Leads: connectors 2,0x0,5mm
Electrical mounting: FASTON connectors
Type of bridge rectifier: three-phase
товар відсутній
| CPC1510G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: THT
Control current max.: 50mA
Kind of output: MOSFET
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: THT
Control current max.: 50mA
Kind of output: MOSFET
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 340.73 грн |
| 6+ | 151.81 грн |
| 15+ | 143.3 грн |
| CPC1510GS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Control current max.: 50mA
Kind of output: MOSFET
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Control current max.: 50mA
Kind of output: MOSFET
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
на замовлення 750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 352.96 грн |
| 5+ | 164.58 грн |
| 14+ | 155.36 грн |
| DSS2X101-015A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 0.99V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 0.99V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
товар відсутній
| IXTN102N65X2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Technology: X2-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 204A
Semiconductor structure: single transistor
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 76A
On-state resistance: 30mΩ
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Technology: X2-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 204A
Semiconductor structure: single transistor
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 76A
On-state resistance: 30mΩ
товар відсутній
| IXFR90N30 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 75A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 75A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTA75N10P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
| IXTQ130N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 641.74 грн |
| 3+ | 405.78 грн |
| 6+ | 383.79 грн |
| IXTQ75N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
| DSEC16-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 40A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.94V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Power dissipation: 60W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 40A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.94V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Power dissipation: 60W
товар відсутній
| DSEC16-12AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 40A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.96V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Power dissipation: 60W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 40A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.96V
Load current: 8A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Power dissipation: 60W
товар відсутній
| MDD142-08N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD142-12N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD142-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DSEP15-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: TO220AC
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: TO220AC
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.52 грн |
| 4+ | 115.63 грн |
| 9+ | 92.22 грн |
| 25+ | 87.26 грн |
| DMA90U1800LB-TUB |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 350A
Case: SMPD
Electrical mounting: SMT
Type of bridge rectifier: three-phase
Max. forward voltage: 1.26V
Load current: 90A
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 350A
Case: SMPD
Electrical mounting: SMT
Type of bridge rectifier: three-phase
Max. forward voltage: 1.26V
Load current: 90A
товар відсутній
| VBE20-20NO1 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 2kV; If: 20A; Ifsm: 65A; FRED
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 2kV
Electrical mounting: FASTON connectors
Load current: 20A
Case: V1-A-Pack
Type of bridge rectifier: single-phase
Max. forward impulse current: 65A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 2kV; If: 20A; Ifsm: 65A; FRED
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: connectors 2,0x0,5mm
Max. off-state voltage: 2kV
Electrical mounting: FASTON connectors
Load current: 20A
Case: V1-A-Pack
Type of bridge rectifier: single-phase
Max. forward impulse current: 65A
товар відсутній
| DSA1-18D |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 339.97 грн |
| 4+ | 217.79 грн |
| 11+ | 205.73 грн |
| MCMA85P1600TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.51V
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. load current: 135A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 95/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.51V
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. load current: 135A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 95/200mA
товар відсутній
| XBB170 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 517.21 грн |
| 4+ | 230.56 грн |
| 10+ | 217.79 грн |
| XBB170P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 248 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 519.51 грн |
| 4+ | 231.27 грн |
| 10+ | 218.5 грн |
| XBB170PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| XBB170S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 50Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 519.51 грн |
| 4+ | 231.27 грн |
| 10+ | 218.5 грн |
| IXTA80N12T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
товар відсутній
| CPC2014N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
товар відсутній
| CPC2014NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 1ms
Turn-on time: 2ms
On-state resistance: 2Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.4A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
товар відсутній
| CPC2017N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 3ms
Turn-on time: 3ms
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50000mA
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 3ms
Turn-on time: 3ms
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50000mA
Case: SO8
товар відсутній
| CPC2017NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 3ms
Turn-on time: 3ms
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
Turn-off time: 3ms
Turn-on time: 3ms
On-state resistance: 16Ω
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Case: SO8
товар відсутній
| CPC2030N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.61 грн |
| 9+ | 94.35 грн |
| 24+ | 89.39 грн |
| CPC2030NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
| IXFT120N25X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Case: TO268HV
Drain current: 120A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 122nC
Kind of channel: enhanced
Reverse recovery time: 140ns
Drain-source voltage: 250V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Case: TO268HV
Drain current: 120A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 122nC
Kind of channel: enhanced
Reverse recovery time: 140ns
Drain-source voltage: 250V
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 885.45 грн |
| 2+ | 659.75 грн |
| 4+ | 623.57 грн |
| IXFR180N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
| IXTA3N120HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
| IXTH3N120 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
| IXTA3N120 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
товар відсутній
| IXTP3N120 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
товар відсутній
| CPC1998J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; THT
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 20.88x19.91x5.03mm
Operating temperature: -40...85°C
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; THT
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 20.88x19.91x5.03mm
Operating temperature: -40...85°C
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
товар відсутній
| IXTA230N04T4 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товар відсутній
| IXTP230N04T4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товар відсутній
| IXFH170N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
| IXFK170N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 899.97 грн |
| 2+ | 611.51 грн |
| 4+ | 578.17 грн |
| IXTQ170N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3P
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO3P
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 732.66 грн |
| DSEC120-12AK |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 330W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: TO264
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.66V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Mounting: THT
Max. forward impulse current: 0.5kA
Power dissipation: 330W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: TO264
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.66V
Load current: 60A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
товар відсутній
| MMJX1H40N150 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Type of thyristor: thyristor
Mounting: SMD
Case: SMPD
Max. off-state voltage: 1.5kV
Max. forward impulse current: 15.5kA
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Type of thyristor: thyristor
Mounting: SMD
Case: SMPD
Max. off-state voltage: 1.5kV
Max. forward impulse current: 15.5kA
товар відсутній
| MDD56-16N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
товар відсутній
| PS2601 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Switched voltage: max. 600V AC
Body dimensions: 19.2x6.35x3.3mm
Mounting: THT
Insulation voltage: 3.75kV
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Switched voltage: max. 600V AC
Body dimensions: 19.2x6.35x3.3mm
Mounting: THT
Insulation voltage: 3.75kV
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Relay variant: 1-phase
товар відсутній
| MDD56-08N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 800V; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD56-14N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD56-18N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.4kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
товар відсутній
| IXFX32N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTA140N12T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 365.95 грн |
| 3+ | 305.76 грн |
| 4+ | 243.33 грн |
| IXYH12N250C |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 48A
Turn-on time: 12ns
Turn-off time: 167ns
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 48A
Turn-on time: 12ns
Turn-off time: 167ns
товар відсутній
| IXYH12N250CV1HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 80A
Turn-on time: 32ns
Turn-off time: 333ns
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 310W
Features of semiconductor devices: high voltage
Gate charge: 56nC
Technology: XPT™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 80A
Turn-on time: 32ns
Turn-off time: 333ns
товар відсутній
| MCMA65PD1200TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 105A
Max. forward voltage: 1.17V
Load current: 65A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 105A
Max. forward voltage: 1.17V
Load current: 65A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA65PD1600TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 105A
Max. forward voltage: 1.17V
Load current: 65A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 105A
Max. forward voltage: 1.17V
Load current: 65A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA265PD1600KB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 421A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 421A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VBO50-18NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 45A; Ifsm: 720A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 45A
Max. forward impulse current: 720A
Electrical mounting: screw
Version: module
Leads: M5 screws
Case: PWS-B
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 45A; Ifsm: 720A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 45A
Max. forward impulse current: 720A
Electrical mounting: screw
Version: module
Leads: M5 screws
Case: PWS-B
Mechanical mounting: screw
товар відсутній
| VUO50-18NO3 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 60A; Ifsm: 500A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 60A
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.07V
Leads: connectors 6,3x0,8mm
Case: FO-F-B
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 60A; Ifsm: 500A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 60A
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.07V
Leads: connectors 6,3x0,8mm
Case: FO-F-B
Mechanical mounting: screw
товар відсутній
| IXFH96N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Mounting: THT
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 24mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Mounting: THT
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 24mΩ
товар відсутній