| Фото | Назва | Виробник | Інформація |
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IXFN32N100P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 27A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 75A Power dissipation: 690W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 225nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
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IXFN32N100Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 96A Power dissipation: 780W Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 195nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
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IXFN32N120P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 32A Pulsed drain current: 100A Power dissipation: 1kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.31Ω Gate charge: 360nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN52N100X | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Pulsed drain current: 100A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.125Ω Gate charge: 245nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 260ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN82N60Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 66A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 75mΩ Pulsed drain current: 240A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 275nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXTN62N50L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A Technology: Linear™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 62A Pulsed drain current: 150A Power dissipation: 800W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.1Ω Gate charge: 550nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 0.5µs Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFR140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™ Mounting: THT Polarisation: unipolar Power dissipation: 300W Type of transistor: N-MOSFET On-state resistance: 28mΩ Drain current: 70A Drain-source voltage: 300V Kind of package: tube Case: ISOPLUS247™ Gate charge: 185nC Kind of channel: enhanced |
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IXFX140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™ Mounting: THT Polarisation: unipolar Power dissipation: 1.04kW Type of transistor: N-MOSFET On-state resistance: 24mΩ Drain current: 140A Drain-source voltage: 300V Kind of package: tube Case: PLUS247™ Gate charge: 185nC Kind of channel: enhanced |
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IXTP3N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns Mounting: THT Power dissipation: 125W Polarisation: unipolar Kind of package: tube Gate charge: 1.07µC Kind of channel: depleted Case: TO220AB Reverse recovery time: 24ns Drain-source voltage: 500V Drain current: 3A On-state resistance: 1.5Ω Type of transistor: N-MOSFET |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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DPF30I300PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W Mounting: THT Kind of package: tube Max. forward impulse current: 390A Max. off-state voltage: 300V Max. forward voltage: 1.17V Load current: 30A Semiconductor structure: single diode Reverse recovery time: 55ns Power dissipation: 175W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Case: TO220AC |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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VUO86-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A Electrical mounting: THT Mechanical mounting: screw Max. forward impulse current: 0.55kA Max. forward voltage: 1.51V Version: module Leads: wire Ø 1.5mm Max. off-state voltage: 1.6kV Load current: 86A Case: ECO-PAC 1 Type of bridge rectifier: three-phase |
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| VVZ110-12IO7 | IXYS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E Version: module Load current: 110A Gate current: 100/200mA Max. forward impulse current: 1.35kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of bridge rectifier: half-controlled Case: PWS-E Leads: connectors 2,8x0,8mm; M6 screws Max. off-state voltage: 1.2kV Max. forward voltage: 1.75V |
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IXFR200N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 9mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhanced |
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MCO50-12IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 57A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.2kV Load current: 57A Case: SOT227B Max. forward voltage: 1.53V Gate current: 80/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MKI50-12F7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W Topology: H-bridge Technology: HiPerFRED™; NPT Case: E2-Pack Application: motors Power dissipation: 350W Collector current: 45A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| MWI50-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: NPT Mechanical mounting: screw |
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| MWI50-12A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 350W Technology: NPT Mechanical mounting: screw |
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| MWI50-12T7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: E2-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 270W Mechanical mounting: screw |
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MCO75-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 80A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.2kV Load current: 80A Case: SOT227B Max. forward voltage: 1.67V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MEA75-12DA | IXYS |
Category: Diode modules Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Type of module: diode Semiconductor structure: common anode Max. off-state voltage: 1.2kV Load current: 75A Case: TO240AA Max. forward voltage: 1.85V Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw |
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MEE75-12DA | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Max. off-state voltage: 1.2kV Load current: 75A Max. forward impulse current: 1.2kA Electrical mounting: screw Max. forward voltage: 1.85V Case: TO240AA Mechanical mounting: screw Semiconductor structure: double series Type of module: diode |
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MEK75-12DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Type of module: diode Semiconductor structure: common cathode Max. off-state voltage: 1.2kV Load current: 75A Case: TO240AA Max. forward voltage: 1.85V Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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| MWI75-12A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Case: E3-Pack Mechanical mounting: screw Technology: NPT Semiconductor structure: transistor/transistor Application: motors Power dissipation: 500W Pulsed collector current: 150A Type of module: IGBT Gate-emitter voltage: ±20V Collector current: 85A Topology: IGBT three-phase bridge |
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| MWI75-12T7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Mechanical mounting: screw Pulsed collector current: 100A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 75A Topology: IGBT three-phase bridge; NTC thermistor Power dissipation: 355W |
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| MWI75-12T8T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Mechanical mounting: screw Pulsed collector current: 150A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 75A Topology: IGBT three-phase bridge; NTC thermistor Power dissipation: 360W |
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VUE75-12NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 74A Max. forward impulse current: 200A Electrical mounting: THT Version: module Max. forward voltage: 2.71V Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw Technology: FRED |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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IXFT170N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns Drain-source voltage: 250V Drain current: 170A Case: TO268HV Polarisation: unipolar On-state resistance: 7.4mΩ Power dissipation: 890W Kind of channel: enhanced Gate charge: 0.19µC Reverse recovery time: 140ns Kind of package: tube Features of semiconductor devices: ultra junction x-class Mounting: SMD Type of transistor: N-MOSFET |
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IXBP5N160G | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.6kV; 3.5A; 68W; TO220-3 Mounting: THT Case: TO220-3 Kind of package: tube Power dissipation: 68W Gate charge: 26nC Technology: BiMOSFET™ Features of semiconductor devices: high voltage Pulsed collector current: 6A Type of transistor: IGBT Turn-on time: 340ns Turn-off time: 190ns Gate-emitter voltage: ±20V Collector current: 3.5A Collector-emitter voltage: 1.6kV |
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IXXK200N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Case: TO264 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 315nC |
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IXXK200N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Case: TO264 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 143ns Turn-off time: 240ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 315nC |
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IXXK200N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX4™; Trench; XPT™ Case: TO264 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1kA Turn-on time: 135ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 517nC |
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IXGT16N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268 Mounting: SMD Pulsed collector current: 80A Type of transistor: IGBT Turn-on time: 90ns Kind of package: tube Case: TO268 Turn-off time: 1.6µs Gate-emitter voltage: ±20V Collector current: 16A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 78nC Technology: NPT Features of semiconductor devices: high voltage |
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IXGT16N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Mounting: SMD Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 35ns Kind of package: tube Case: TO268 Turn-off time: 298ns Gate-emitter voltage: ±20V Collector current: 11A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 70nC Technology: NPT Features of semiconductor devices: high voltage |
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IXGT16N170AH1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Mounting: SMD Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 35ns Kind of package: tube Case: TO268 Turn-off time: 298ns Gate-emitter voltage: ±20V Collector current: 11A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 70nC Technology: NPT Features of semiconductor devices: high voltage |
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IXGA24N120C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263 Case: TO263 Pulsed collector current: 96A Turn-on time: 51ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT Mounting: SMD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A |
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IXGH24N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 51ns Turn-off time: 430ns |
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IXGP24N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 51ns Turn-off time: 430ns |
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IXGH24N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 106nC Kind of package: tube Turn-on time: 105ns Turn-off time: 560ns Features of semiconductor devices: high voltage |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXGH24N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 54ns Turn-off time: 456ns Features of semiconductor devices: high voltage |
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IXGT24N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Kind of package: tube Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 106nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 150A Type of transistor: IGBT Turn-on time: 105ns Case: TO268 Turn-off time: 560ns Gate-emitter voltage: ±20V Collector current: 24A Mounting: SMD |
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IXGT24N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Kind of package: tube Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 0.14µC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 75A Type of transistor: IGBT Turn-on time: 54ns Case: TO268 Turn-off time: 456ns Gate-emitter voltage: ±20V Collector current: 24A Mounting: SMD |
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IXGH24N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT; Sonic FRD™ Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 51ns Turn-off time: 430ns |
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IXFR64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 37A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
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IXFR64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 94mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced |
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IXFT44N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
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IXFT44N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhanced |
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IXFX64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
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IXFX64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced |
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IXFX74N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 74A Power dissipation: 1.4kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 165nC Kind of package: tube Kind of channel: enhanced |
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IXFX94N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar2™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXTQ44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO3P On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
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DSS6-0025BS | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 25V; 6A; DPAK; reel,tape; 40W Power dissipation: 40W Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 25V Type of diode: Schottky rectifying Max. forward impulse current: 120A Max. forward voltage: 0.3V Load current: 6A |
на замовлення 1123 шт: термін постачання 21-30 дні (днів) |
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DSS6-0045AS-TRL | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; reel,tape; 50W Power dissipation: 50W Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 45V Type of diode: Schottky rectifying Max. forward impulse current: 120A Max. forward voltage: 0.5V Load current: 6A |
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DSS6-0045AS-TUB | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; tube; 50W Power dissipation: 50W Case: DPAK Mounting: SMD Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 45V Type of diode: Schottky rectifying Max. forward impulse current: 120A Max. forward voltage: 0.5V Load current: 6A |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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CPC1979J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 1.4A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 0.75Ω Mounting: THT Case: ISOPLUS264™ Operating temperature: -40...85°C Body dimensions: 19.91x26.16x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 25ms Turn-off time: 5ms Kind of output: MOSFET |
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IXXH30N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 146A Mounting: THT Gate charge: 52nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns |
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IXXH30N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 146A Mounting: THT Gate charge: 52nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns |
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IXXH30N65C4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 136A Mounting: THT Gate charge: 47nC Kind of package: tube Turn-on time: 65ns Turn-off time: 161ns |
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IXYH30N65C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 118A Mounting: THT Gate charge: 44nC Kind of package: tube Turn-on time: 59ns Turn-off time: 0.12µs |
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IXYP30N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3 Mounting: THT Case: TO220-3 Kind of package: tube Pulsed collector current: 118A Turn-on time: 59ns Turn-off time: 0.12µs Collector-emitter voltage: 650V Power dissipation: 270W Gate charge: 44nC Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 30A |
товар відсутній |
| IXFN32N100P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 27A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 75A
Power dissipation: 690W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 225nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 27A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 75A
Power dissipation: 690W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 225nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товар відсутній
| IXFN32N100Q3 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товар відсутній
| IXFN32N120P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 100A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 100A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN52N100X |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN82N60Q3 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 66A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 240A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 66A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 240A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3537.59 грн |
| IXTN62N50L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Pulsed drain current: 150A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 550nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Pulsed drain current: 150A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 550nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFR140N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 300W
Type of transistor: N-MOSFET
On-state resistance: 28mΩ
Drain current: 70A
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Gate charge: 185nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 300W
Type of transistor: N-MOSFET
On-state resistance: 28mΩ
Drain current: 70A
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Gate charge: 185nC
Kind of channel: enhanced
товар відсутній
| IXFX140N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Kind of package: tube
Case: PLUS247™
Gate charge: 185nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Kind of package: tube
Case: PLUS247™
Gate charge: 185nC
Kind of channel: enhanced
товар відсутній
| IXTP3N50D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 1.07µC
Kind of channel: depleted
Case: TO220AB
Reverse recovery time: 24ns
Drain-source voltage: 500V
Drain current: 3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 1.07µC
Kind of channel: depleted
Case: TO220AB
Reverse recovery time: 24ns
Drain-source voltage: 500V
Drain current: 3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.68 грн |
| 5+ | 183.94 грн |
| 13+ | 174.53 грн |
| 250+ | 167.29 грн |
| DPF30I300PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Mounting: THT
Kind of package: tube
Max. forward impulse current: 390A
Max. off-state voltage: 300V
Max. forward voltage: 1.17V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 55ns
Power dissipation: 175W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Mounting: THT
Kind of package: tube
Max. forward impulse current: 390A
Max. off-state voltage: 300V
Max. forward voltage: 1.17V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 55ns
Power dissipation: 175W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.02 грн |
| 3+ | 214.36 грн |
| 5+ | 173.8 грн |
| 14+ | 164.39 грн |
| VUO86-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Electrical mounting: THT
Mechanical mounting: screw
Max. forward impulse current: 0.55kA
Max. forward voltage: 1.51V
Version: module
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Load current: 86A
Case: ECO-PAC 1
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Electrical mounting: THT
Mechanical mounting: screw
Max. forward impulse current: 0.55kA
Max. forward voltage: 1.51V
Version: module
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Load current: 86A
Case: ECO-PAC 1
Type of bridge rectifier: three-phase
товар відсутній
| VVZ110-12IO7 |
|
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Load current: 110A
Gate current: 100/200mA
Max. forward impulse current: 1.35kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: PWS-E
Leads: connectors 2,8x0,8mm; M6 screws
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Load current: 110A
Gate current: 100/200mA
Max. forward impulse current: 1.35kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: PWS-E
Leads: connectors 2,8x0,8mm; M6 screws
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
товар відсутній
| IXFR200N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MCO50-12IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 57A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 57A
Case: SOT227B
Max. forward voltage: 1.53V
Gate current: 80/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 57A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 57A
Case: SOT227B
Max. forward voltage: 1.53V
Gate current: 80/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MKI50-12F7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W
Topology: H-bridge
Technology: HiPerFRED™; NPT
Case: E2-Pack
Application: motors
Power dissipation: 350W
Collector current: 45A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W
Topology: H-bridge
Technology: HiPerFRED™; NPT
Case: E2-Pack
Application: motors
Power dissipation: 350W
Collector current: 45A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| MWI50-12A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MWI50-12A7T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MWI50-12T7T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
товар відсутній
| MCO75-12io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 80A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 80A
Case: SOT227B
Max. forward voltage: 1.67V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 80A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 80A
Case: SOT227B
Max. forward voltage: 1.67V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MEA75-12DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MEE75-12DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Max. off-state voltage: 1.2kV
Load current: 75A
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. forward voltage: 1.85V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Max. off-state voltage: 1.2kV
Load current: 75A
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. forward voltage: 1.85V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
товар відсутній
| MEK75-12DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1895.92 грн |
| 2+ | 1664.9 грн |
| 3+ | 1664.18 грн |
| 36+ | 1637.38 грн |
| MWI75-12A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: E3-Pack
Mechanical mounting: screw
Technology: NPT
Semiconductor structure: transistor/transistor
Application: motors
Power dissipation: 500W
Pulsed collector current: 150A
Type of module: IGBT
Gate-emitter voltage: ±20V
Collector current: 85A
Topology: IGBT three-phase bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: E3-Pack
Mechanical mounting: screw
Technology: NPT
Semiconductor structure: transistor/transistor
Application: motors
Power dissipation: 500W
Pulsed collector current: 150A
Type of module: IGBT
Gate-emitter voltage: ±20V
Collector current: 85A
Topology: IGBT three-phase bridge
товар відсутній
| MWI75-12T7T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 355W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 355W
товар відсутній
| MWI75-12T8T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 360W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 360W
товар відсутній
| VUE75-12NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1338.29 грн |
| 2+ | 1175.35 грн |
| 3+ | 1174.63 грн |
| IXFT170N25X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Drain-source voltage: 250V
Drain current: 170A
Case: TO268HV
Polarisation: unipolar
On-state resistance: 7.4mΩ
Power dissipation: 890W
Kind of channel: enhanced
Gate charge: 0.19µC
Reverse recovery time: 140ns
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Mounting: SMD
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Drain-source voltage: 250V
Drain current: 170A
Case: TO268HV
Polarisation: unipolar
On-state resistance: 7.4mΩ
Power dissipation: 890W
Kind of channel: enhanced
Gate charge: 0.19µC
Reverse recovery time: 140ns
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Mounting: SMD
Type of transistor: N-MOSFET
товар відсутній
| IXBP5N160G |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.6kV; 3.5A; 68W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Power dissipation: 68W
Gate charge: 26nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 6A
Type of transistor: IGBT
Turn-on time: 340ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Collector current: 3.5A
Collector-emitter voltage: 1.6kV
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.6kV; 3.5A; 68W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Power dissipation: 68W
Gate charge: 26nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 6A
Type of transistor: IGBT
Turn-on time: 340ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Collector current: 3.5A
Collector-emitter voltage: 1.6kV
товар відсутній
| IXXK200N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
товар відсутній
| IXXK200N60C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 143ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 143ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
товар відсутній
| IXXK200N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Case: TO264
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 517nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Case: TO264
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 517nC
товар відсутній
| IXGT16N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Mounting: SMD
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO268
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Mounting: SMD
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO268
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
товар відсутній
| IXGT16N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
товар відсутній
| IXGT16N170AH1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
товар відсутній
| IXGA24N120C3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Case: TO263
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Case: TO263
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
товар відсутній
| IXGH24N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товар відсутній
| IXGP24N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товар відсутній
| IXGH24N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1067.67 грн |
| 3+ | 937.82 грн |
| IXGH24N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGT24N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 106nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 105ns
Case: TO268
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 106nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 105ns
Case: TO268
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
товар відсутній
| IXGT24N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 54ns
Case: TO268
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 54ns
Case: TO268
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
товар відсутній
| IXGH24N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товар відсутній
| IXFR64N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
| IXFR64N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT44N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT44N50Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX64N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX64N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX74N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX94N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXTQ44N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
| DSS6-0025BS |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 25V; 6A; DPAK; reel,tape; 40W
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 25V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.3V
Load current: 6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 25V; 6A; DPAK; reel,tape; 40W
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 25V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.3V
Load current: 6A
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.93 грн |
| 7+ | 55.76 грн |
| 10+ | 49.24 грн |
| 20+ | 42.73 грн |
| 54+ | 40.55 грн |
| DSS6-0045AS-TRL |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; reel,tape; 50W
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.5V
Load current: 6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; reel,tape; 50W
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.5V
Load current: 6A
товар відсутній
| DSS6-0045AS-TUB |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; tube; 50W
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.5V
Load current: 6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; tube; 50W
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.5V
Load current: 6A
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 389.95 грн |
| CPC1979J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.4A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 0.75Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 25ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.4A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 0.75Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 25ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| IXXH30N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 146A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 146A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
товар відсутній
| IXXH30N65B4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 146A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 146A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
товар відсутній
| IXXH30N65C4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 136A
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 161ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 136A
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 161ns
товар відсутній
| IXYH30N65C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
| IXYP30N65C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Collector-emitter voltage: 650V
Power dissipation: 270W
Gate charge: 44nC
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 30A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Collector-emitter voltage: 650V
Power dissipation: 270W
Gate charge: 44nC
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 30A
товар відсутній