| Фото | Назва | Виробник | Інформація |
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DSEI2X61-10B | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw Max. off-state voltage: 1kV Load current: 60A x2 Semiconductor structure: double independent Max. forward impulse current: 540A Case: SOT227B Max. forward voltage: 2.3V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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DSEI2X61-12B | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; If: 52Ax2; SOT227B; screw Max. off-state voltage: 1.2kV Load current: 52A x2 Semiconductor structure: double independent Max. forward impulse current: 0.5kA Case: SOT227B Max. forward voltage: 2.5V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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DSEI2x61-12P | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 52Ax2; ECO-PAC 1 Max. off-state voltage: 1.2kV Load current: 52A x2 Semiconductor structure: double independent Max. forward impulse current: 0.45kA Case: ECO-PAC 1 Max. forward voltage: 2.15V Electrical mounting: THT Mechanical mounting: screw Type of module: diode |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| DSEI36-06AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 37A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 300A Case: TO263AB Max. forward voltage: 1.4V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
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DSEI60-02A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 69A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 540A Case: TO247-2 Max. forward voltage: 0.88V Power dissipation: 150W Reverse recovery time: 35ns Technology: FRED |
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DSEI60-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.55kA Case: TO247-2 Max. forward voltage: 1.5V Power dissipation: 166W Reverse recovery time: 35ns Technology: FRED |
на замовлення 138 шт: термін постачання 21-30 дні (днів) |
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IXFT400N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns Case: TO268 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Power dissipation: 1kW Gate charge: 420nC Polarisation: unipolar Drain current: 400A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET On-state resistance: 2.3mΩ Reverse recovery time: 77ns |
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IXYN80N90C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 900V Collector current: 70A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 340A Power dissipation: 500W Technology: GenX3™; XPT™ Mechanical mounting: screw |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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MMO62-16IO6 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.6kV; 25A; SOT227B; Ufmax: 1.57V Type of module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.6kV Load current: 25A Case: SOT227B Max. forward voltage: 1.57V Max. forward impulse current: 430A Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 100mA |
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MMO74-12IO6 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 40A; SOT227B; Ufmax: 1.29V Type of module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.2kV Load current: 40A Case: SOT227B Max. forward voltage: 1.29V Max. forward impulse current: 600A Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 100/150mA |
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MMO74-16IO6 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.6kV; 40A; SOT227B; Ufmax: 1.29V Type of module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.6kV Load current: 40A Case: SOT227B Max. forward voltage: 1.29V Max. forward impulse current: 600A Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 100/150mA |
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MMO90-12io6 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.2V; screw Type of module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.2kV Load current: 50A Case: SOT227B Max. forward voltage: 1.2V Max. forward impulse current: 800A Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 100/200mA |
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MMO90-14IO6 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.4kV; 50A; SOT227B; Ufmax: 1.2V; screw Max. off-state voltage: 1.4kV Load current: 50A Max. forward impulse current: 800A Electrical mounting: screw Max. forward voltage: 1.2V Case: SOT227B Mechanical mounting: screw Kind of package: bulk Semiconductor structure: opposing Gate current: 100/200mA Type of module: thyristor |
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MCC200-14io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 196Ax2; Y4-M6; Ufmax: 1.2V Case: Y4-M6 Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.4kV Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Load current: 196A x2 Type of module: thyristor Max. forward impulse current: 8.6kA Max. forward voltage: 1.2V |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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MCC200-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 196A x2 Case: Y4-M6 Max. forward voltage: 1.2V Max. forward impulse current: 8.6kA Gate current: 150/220mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCC200-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 196Ax2; Y4-M6; Ufmax: 1.2V Case: Y4-M6 Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.8kV Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Load current: 196A x2 Type of module: thyristor Max. forward impulse current: 8.6kA Max. forward voltage: 1.2V |
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| VUO190-14NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 240A; Ifsm: 2.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.4kV Load current: 240A Max. forward impulse current: 2.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.07V Leads: M6 screws Case: PWS-E Mechanical mounting: screw |
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DPG20C300PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Mounting: THT Case: TO220AB Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 300V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A Power dissipation: 65W |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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DPG20C300PN | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Kind of package: tube Power dissipation: 35W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Mounting: THT Case: TO220FP Max. off-state voltage: 300V Max. forward voltage: 1.27V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 140A |
на замовлення 485 шт: термін постачання 21-30 дні (днів) |
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DPG30C300HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 1.25V Power dissipation: 90W Technology: HiPerFRED™ 2nd Gen Features of semiconductor devices: fast switching Max. off-state voltage: 300V Load current: 15A x2 Semiconductor structure: common cathode; double Type of diode: rectifying Reverse recovery time: 35ns Max. forward impulse current: 240A |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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DPG30C300PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W Case: TO220AB Mounting: THT Kind of package: tube Max. forward voltage: 1.26V Power dissipation: 90W Technology: HiPerFRED™ 2nd Gen Features of semiconductor devices: fast switching Max. off-state voltage: 300V Heatsink thickness: 1.14...1.39mm Load current: 15A x2 Semiconductor structure: common cathode; double Type of diode: rectifying Reverse recovery time: 35ns Max. forward impulse current: 240A |
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| DPG30C300PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V Type of diode: rectifying Mounting: SMD Case: TO263AB Kind of package: reel; tape Max. forward impulse current: 240A Power dissipation: 90W Features of semiconductor devices: fast switching Technology: HiPerFRED™ Max. off-state voltage: 300V Max. forward voltage: 1.51V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns |
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DPG60C300HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 360A Case: TO247-3 Max. forward voltage: 1.39V Power dissipation: 160W Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen |
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DPG60C300HJ | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 450A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.45kA Case: ISOPLUS247™ Max. forward voltage: 1.26V Power dissipation: 145W Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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DPG60C300QB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 360A Case: TO3P Max. forward voltage: 1.34V Power dissipation: 160W Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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DPG80C300HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W Kind of package: tube Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Mounting: THT Case: TO247-3 Max. off-state voltage: 300V Max. forward voltage: 1.36V Load current: 40A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 0.45kA Power dissipation: 215W |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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PBA150S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 2.5ms |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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| PBA150STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 2.5ms |
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LCB110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| LCB110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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MCD44-18io8B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Mechanical mounting: screw |
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IXEL40N400 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 4kV; 40A; 380W; ISOPLUS i5-pac™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 4kV Collector current: 40A Power dissipation: 380W Case: ISOPLUS i5-pac™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 275nC Kind of package: tube Turn-on time: 260ns Turn-off time: 1.17µs Features of semiconductor devices: high voltage |
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DSP45-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-3; 270W Semiconductor structure: double series Max. off-state voltage: 1.6kV Max. forward impulse current: 0.48kA Case: TO247-3 Mounting: THT Power dissipation: 270W Kind of package: tube Load current: 45A Type of diode: rectifying Max. forward voltage: 1.23V |
на замовлення 267 шт: термін постачання 21-30 дні (днів) |
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DSP45-16AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; ISOPLUS247™ Semiconductor structure: double series Max. off-state voltage: 1.6kV Max. forward impulse current: 0.48kA Case: ISOPLUS247™ Mounting: THT Power dissipation: 165W Kind of package: tube Load current: 45A Type of diode: rectifying Max. forward voltage: 1.26V |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| DSP45-16AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W Semiconductor structure: double series Max. off-state voltage: 1.6kV Max. forward impulse current: 0.48kA Case: TO268AAHV Mounting: SMD Power dissipation: 270W Kind of package: tube Load current: 45A Type of diode: rectifying Max. forward voltage: 1.23V |
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VUB145-16NOXT | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 140A Case: E2-Pack Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 500W Technology: X2PT Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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CPC1560G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC Contacts configuration: SPST-NO Operating temperature: -40...85°C Mounting: THT Case: DIP8 Max. operating current: 300mA Turn-off time: 400µs Control current max.: 50mA On-state resistance: 5.6Ω Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 0.1ms Switched voltage: max. 60V AC; max. 60V DC |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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CPC1560GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC Case: DIP8 On-state resistance: 5.6Ω Mounting: SMT Turn-on time: 0.1ms Turn-off time: 400µs Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Switched voltage: max. 60V AC; max. 60V DC Max. operating current: 300mA Control current max.: 50mA Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 9.65x6.35x3.3mm |
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LCB710 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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LCB710S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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| LCB710STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.6Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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| MCD220-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 250Ax2; W102; Ufmax: 1.53V; bulk Max. off-state voltage: 1.2kV Max. load current: 400A Max. forward voltage: 1.53V Load current: 250A x2 Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 8.5kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.9V Case: W102 |
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| MCD220-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 250Ax2; W102; Ufmax: 1.53V; bulk Max. off-state voltage: 1.4kV Max. load current: 400A Max. forward voltage: 1.53V Load current: 250A x2 Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 8.5kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.9V Case: W102 |
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| MCD220-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 250Ax2; W102; Ufmax: 1.53V; bulk Max. off-state voltage: 1.6kV Max. load current: 400A Max. forward voltage: 1.53V Load current: 250A x2 Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 8.5kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.9V Case: W102 |
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| MCD220-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 250Ax2; W102; Ufmax: 1.53V; bulk Max. off-state voltage: 1.8kV Max. load current: 400A Max. forward voltage: 1.53V Load current: 250A x2 Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 8.5kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.9V Case: W102 |
товар відсутній |
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| MCD250-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 287Ax2; W102; Ufmax: 1.36V; bulk Kind of package: bulk Max. forward impulse current: 9kA Gate current: 150/200mA Max. forward voltage: 1.36V Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Load current: 287A x2 Max. load current: 450A Type of module: diode-thyristor Semiconductor structure: double series Threshold on-voltage: 0.85V Case: W102 |
товар відсутній |
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| MCD250-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 287Ax2; W102; Ufmax: 1.36V; bulk Kind of package: bulk Max. forward impulse current: 9kA Gate current: 150/200mA Max. forward voltage: 1.36V Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: FASTON connectors; screw Load current: 287A x2 Max. load current: 450A Type of module: diode-thyristor Semiconductor structure: double series Threshold on-voltage: 0.85V Case: W102 |
товар відсутній |
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| MCD250-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 287Ax2; W102; Ufmax: 1.36V; bulk Kind of package: bulk Max. forward impulse current: 9kA Gate current: 150/200mA Max. forward voltage: 1.36V Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors; screw Load current: 287A x2 Max. load current: 450A Type of module: diode-thyristor Semiconductor structure: double series Threshold on-voltage: 0.85V Case: W102 |
товар відсутній |
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| MCD250-18IO1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 287Ax2; W102; Ufmax: 1.36V; bulk Kind of package: bulk Max. forward impulse current: 9kA Gate current: 150/200mA Max. forward voltage: 1.36V Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: FASTON connectors; screw Load current: 287A x2 Max. load current: 450A Type of module: diode-thyristor Semiconductor structure: double series Threshold on-voltage: 0.85V Case: W102 |
товар відсутній |
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| IXFH170N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 170A Pulsed drain current: 340A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
товар відсутній |
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| IXFQ170N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 170A Pulsed drain current: 340A Power dissipation: 520W Case: TO3P Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
товар відсутній |
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| MEO550-02DA | IXYS |
Category: Diode modules Description: Module: diode; single diode; 200V; If: 582A; Y4-M6; Ufmax: 1.08V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 200V Load current: 582A Case: Y4-M6 Max. forward voltage: 1.08V Max. forward impulse current: 4.8kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
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|
IXFH74N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3 Mounting: THT Gate charge: 107nC Technology: HiPerFET™; PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO247-3 Reverse recovery time: 200ns Drain-source voltage: 200V Drain current: 74A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Kind of package: tube |
на замовлення 157 шт: термін постачання 21-30 дні (днів) |
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IXTQ74N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO3P Mounting: THT Gate charge: 107nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO3P Reverse recovery time: 160ns Drain-source voltage: 200V Drain current: 74A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Kind of package: tube |
товар відсутній |
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|
|
IXTT74N20P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO268 Mounting: SMD Gate charge: 107nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO268 Reverse recovery time: 160ns Drain-source voltage: 200V Drain current: 74A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Kind of package: tube |
товар відсутній |
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DHG100X1200NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 50Ax2; SOT227B; screw Max. off-state voltage: 1.2kV Semiconductor structure: double independent Case: SOT227B Type of module: diode Technology: Sonic FRD™ Max. forward voltage: 2.97V Load current: 50A x2 Max. forward impulse current: 0.5kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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DHG10C600PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; TO220AB; 40W Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 2.17V Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Features of semiconductor devices: fast switching Max. forward impulse current: 40A Kind of package: tube Reverse recovery time: 35ns Power dissipation: 40W Technology: Sonic FRD™ Heatsink thickness: 1.14...1.39mm |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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DHG10I1200PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W Mounting: THT Power dissipation: 85W Kind of package: tube Type of diode: rectifying Technology: Sonic FRD™ Heatsink thickness: 1.14...1.39mm Features of semiconductor devices: fast switching Case: TO220AC Max. off-state voltage: 1.2kV Max. forward voltage: 2.23V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 200ns Max. forward impulse current: 60A |
на замовлення 162 шт: термін постачання 21-30 дні (днів) |
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DHG10I1200PM | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W Mounting: THT Power dissipation: 30W Kind of package: tube Type of diode: rectifying Technology: Sonic FRD™ Features of semiconductor devices: fast switching Case: TO220FP-2 Max. off-state voltage: 1.2kV Max. forward voltage: 2.13V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 65A |
товар відсутній |
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DHG10I1800PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.8kV; 10A; tube; Ifsm: 60A; TO220AC; 85W Mounting: THT Power dissipation: 85W Kind of package: tube Type of diode: rectifying Technology: Sonic FRD™ Heatsink thickness: 1.14...1.39mm Features of semiconductor devices: fast switching Case: TO220AC Max. off-state voltage: 1.8kV Max. forward voltage: 2.33V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 300ns Max. forward impulse current: 60A |
товар відсутній |
| DSEI2X61-10B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 540A
Case: SOT227B
Max. forward voltage: 2.3V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 540A
Case: SOT227B
Max. forward voltage: 2.3V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| DSEI2X61-12B | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 52A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.5kA
Case: SOT227B
Max. forward voltage: 2.5V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 52A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.5kA
Case: SOT227B
Max. forward voltage: 2.5V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2018.43 грн |
| 2+ | 1772.1 грн |
| DSEI2x61-12P |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; ECO-PAC 1
Max. off-state voltage: 1.2kV
Load current: 52A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.45kA
Case: ECO-PAC 1
Max. forward voltage: 2.15V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 52Ax2; ECO-PAC 1
Max. off-state voltage: 1.2kV
Load current: 52A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.45kA
Case: ECO-PAC 1
Max. forward voltage: 2.15V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1325.5 грн |
| 2+ | 1163.43 грн |
| 10+ | 1152.79 грн |
| DSEI36-06AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 300A
Case: TO263AB
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 300A
Case: TO263AB
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
товар відсутній
| DSEI60-02A | |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
товар відсутній
| DSEI60-06A | |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.55kA
Case: TO247-2
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.55kA
Case: TO247-2
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 138 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 508.81 грн |
| 3+ | 343.35 грн |
| 7+ | 324.2 грн |
| 30+ | 315.69 грн |
| IXFT400N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Power dissipation: 1kW
Gate charge: 420nC
Polarisation: unipolar
Drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Reverse recovery time: 77ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Power dissipation: 1kW
Gate charge: 420nC
Polarisation: unipolar
Drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Reverse recovery time: 77ns
товар відсутній
| IXYN80N90C3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 70A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 70A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2402.71 грн |
| MMO62-16IO6 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 25A; SOT227B; Ufmax: 1.57V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 25A
Case: SOT227B
Max. forward voltage: 1.57V
Max. forward impulse current: 430A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100mA
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 25A; SOT227B; Ufmax: 1.57V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 25A
Case: SOT227B
Max. forward voltage: 1.57V
Max. forward impulse current: 430A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100mA
товар відсутній
| MMO74-12IO6 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 40A; SOT227B; Ufmax: 1.29V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 600A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/150mA
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 40A; SOT227B; Ufmax: 1.29V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 600A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/150mA
товар відсутній
| MMO74-16IO6 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 40A; SOT227B; Ufmax: 1.29V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 600A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/150mA
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 40A; SOT227B; Ufmax: 1.29V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 600A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/150mA
товар відсутній
| MMO90-12io6 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.2V; screw
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.2V
Max. forward impulse current: 800A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.2V; screw
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.2V
Max. forward impulse current: 800A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
товар відсутній
| MMO90-14IO6 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.4kV; 50A; SOT227B; Ufmax: 1.2V; screw
Max. off-state voltage: 1.4kV
Load current: 50A
Max. forward impulse current: 800A
Electrical mounting: screw
Max. forward voltage: 1.2V
Case: SOT227B
Mechanical mounting: screw
Kind of package: bulk
Semiconductor structure: opposing
Gate current: 100/200mA
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.4kV; 50A; SOT227B; Ufmax: 1.2V; screw
Max. off-state voltage: 1.4kV
Load current: 50A
Max. forward impulse current: 800A
Electrical mounting: screw
Max. forward voltage: 1.2V
Case: SOT227B
Mechanical mounting: screw
Kind of package: bulk
Semiconductor structure: opposing
Gate current: 100/200mA
Type of module: thyristor
товар відсутній
| MCC200-14io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Load current: 196A x2
Type of module: thyristor
Max. forward impulse current: 8.6kA
Max. forward voltage: 1.2V
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Load current: 196A x2
Type of module: thyristor
Max. forward impulse current: 8.6kA
Max. forward voltage: 1.2V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5609.89 грн |
| MCC200-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCC200-18io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Load current: 196A x2
Type of module: thyristor
Max. forward impulse current: 8.6kA
Max. forward voltage: 1.2V
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Load current: 196A x2
Type of module: thyristor
Max. forward impulse current: 8.6kA
Max. forward voltage: 1.2V
товар відсутній
| VUO190-14NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
товар відсутній
| DPG20C300PB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.95 грн |
| 9+ | 99.32 грн |
| 23+ | 94.35 грн |
| DPG20C300PN |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Kind of package: tube
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Kind of package: tube
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO220FP
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 140A
на замовлення 485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.22 грн |
| 10+ | 80.87 грн |
| 12+ | 75.91 грн |
| 31+ | 71.65 грн |
| 250+ | 69.52 грн |
| DPG30C300HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.25V
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Load current: 15A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.25V
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Load current: 15A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 240A
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.08 грн |
| 3+ | 186.57 грн |
| 6+ | 141.17 грн |
| 16+ | 133.37 грн |
| DPG30C300PB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.26V
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Heatsink thickness: 1.14...1.39mm
Load current: 15A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.26V
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Heatsink thickness: 1.14...1.39mm
Load current: 15A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 240A
товар відсутній
| DPG30C300PC-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 240A
Power dissipation: 90W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 300V
Max. forward voltage: 1.51V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 240A
Power dissipation: 90W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 300V
Max. forward voltage: 1.51V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
товар відсутній
| DPG60C300HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.39V
Power dissipation: 160W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.39V
Power dissipation: 160W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
товар відсутній
| DPG60C300HJ |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 450A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: ISOPLUS247™
Max. forward voltage: 1.26V
Power dissipation: 145W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 450A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: ISOPLUS247™
Max. forward voltage: 1.26V
Power dissipation: 145W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 465.26 грн |
| 3+ | 294.4 грн |
| 8+ | 278.09 грн |
| DPG60C300QB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO3P
Max. forward voltage: 1.34V
Power dissipation: 160W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO3P
Max. forward voltage: 1.34V
Power dissipation: 160W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 394.98 грн |
| 3+ | 329.88 грн |
| 4+ | 249.71 грн |
| DPG80C300HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 300V
Max. forward voltage: 1.36V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 215W
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 40Ax2; tube; Ifsm: 450A; TO247-3; 215W
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 300V
Max. forward voltage: 1.36V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 0.45kA
Power dissipation: 215W
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 514.92 грн |
| 3+ | 325.62 грн |
| 7+ | 307.88 грн |
| PBA150S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 788.43 грн |
| 3+ | 333.42 грн |
| 7+ | 314.98 грн |
| PBA150STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
товар відсутній
| LCB110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 381.99 грн |
| LCB110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| MCD44-18io8B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| IXEL40N400 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 4kV; 40A; 380W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 4kV
Collector current: 40A
Power dissipation: 380W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Turn-on time: 260ns
Turn-off time: 1.17µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 4kV; 40A; 380W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 4kV
Collector current: 40A
Power dissipation: 380W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Turn-on time: 260ns
Turn-off time: 1.17µs
Features of semiconductor devices: high voltage
товар відсутній
| DSP45-16A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-3; 270W
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Max. forward impulse current: 0.48kA
Case: TO247-3
Mounting: THT
Power dissipation: 270W
Kind of package: tube
Load current: 45A
Type of diode: rectifying
Max. forward voltage: 1.23V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-3; 270W
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Max. forward impulse current: 0.48kA
Case: TO247-3
Mounting: THT
Power dissipation: 270W
Kind of package: tube
Load current: 45A
Type of diode: rectifying
Max. forward voltage: 1.23V
на замовлення 267 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 363.65 грн |
| 3+ | 302.21 грн |
| 8+ | 285.89 грн |
| 10+ | 283.05 грн |
| 30+ | 276.67 грн |
| DSP45-16AR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; ISOPLUS247™
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Max. forward impulse current: 0.48kA
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 165W
Kind of package: tube
Load current: 45A
Type of diode: rectifying
Max. forward voltage: 1.26V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; ISOPLUS247™
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Max. forward impulse current: 0.48kA
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 165W
Kind of package: tube
Load current: 45A
Type of diode: rectifying
Max. forward voltage: 1.26V
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 841.9 грн |
| 2+ | 554.05 грн |
| 5+ | 523.54 грн |
| DSP45-16AZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Max. forward impulse current: 0.48kA
Case: TO268AAHV
Mounting: SMD
Power dissipation: 270W
Kind of package: tube
Load current: 45A
Type of diode: rectifying
Max. forward voltage: 1.23V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 45A; TO268AAHV; Ufmax: 1.23V; 270W
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Max. forward impulse current: 0.48kA
Case: TO268AAHV
Mounting: SMD
Power dissipation: 270W
Kind of package: tube
Load current: 45A
Type of diode: rectifying
Max. forward voltage: 1.23V
товар відсутній
| VUB145-16NOXT |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6460.97 грн |
| CPC1560G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Max. operating current: 300mA
Turn-off time: 400µs
Control current max.: 50mA
On-state resistance: 5.6Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Switched voltage: max. 60V AC; max. 60V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Max. operating current: 300mA
Turn-off time: 400µs
Control current max.: 50mA
On-state resistance: 5.6Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Switched voltage: max. 60V AC; max. 60V DC
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 410.26 грн |
| 5+ | 173.1 грн |
| CPC1560GS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Case: DIP8
On-state resistance: 5.6Ω
Mounting: SMT
Turn-on time: 0.1ms
Turn-off time: 400µs
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 300mA
Control current max.: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Case: DIP8
On-state resistance: 5.6Ω
Mounting: SMT
Turn-on time: 0.1ms
Turn-off time: 400µs
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 300mA
Control current max.: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
товар відсутній
| LCB710 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 551.59 грн |
| 4+ | 241.91 грн |
| 10+ | 228.43 грн |
| LCB710S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 600.49 грн |
| 4+ | 245.46 грн |
| 10+ | 231.98 грн |
| LCB710STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| MCD220-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250Ax2; W102; Ufmax: 1.53V; bulk
Max. off-state voltage: 1.2kV
Max. load current: 400A
Max. forward voltage: 1.53V
Load current: 250A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 8.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.9V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250Ax2; W102; Ufmax: 1.53V; bulk
Max. off-state voltage: 1.2kV
Max. load current: 400A
Max. forward voltage: 1.53V
Load current: 250A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 8.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.9V
Case: W102
товар відсутній
| MCD220-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250Ax2; W102; Ufmax: 1.53V; bulk
Max. off-state voltage: 1.4kV
Max. load current: 400A
Max. forward voltage: 1.53V
Load current: 250A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 8.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.9V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250Ax2; W102; Ufmax: 1.53V; bulk
Max. off-state voltage: 1.4kV
Max. load current: 400A
Max. forward voltage: 1.53V
Load current: 250A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 8.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.9V
Case: W102
товар відсутній
| MCD220-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250Ax2; W102; Ufmax: 1.53V; bulk
Max. off-state voltage: 1.6kV
Max. load current: 400A
Max. forward voltage: 1.53V
Load current: 250A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 8.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.9V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250Ax2; W102; Ufmax: 1.53V; bulk
Max. off-state voltage: 1.6kV
Max. load current: 400A
Max. forward voltage: 1.53V
Load current: 250A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 8.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.9V
Case: W102
товар відсутній
| MCD220-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250Ax2; W102; Ufmax: 1.53V; bulk
Max. off-state voltage: 1.8kV
Max. load current: 400A
Max. forward voltage: 1.53V
Load current: 250A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 8.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.9V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250Ax2; W102; Ufmax: 1.53V; bulk
Max. off-state voltage: 1.8kV
Max. load current: 400A
Max. forward voltage: 1.53V
Load current: 250A x2
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 8.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.9V
Case: W102
товар відсутній
| MCD250-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
товар відсутній
| MCD250-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
товар відсутній
| MCD250-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
товар відсутній
| MCD250-18IO1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
товар відсутній
| IXFH170N15X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
товар відсутній
| IXFQ170N15X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
товар відсутній
| MEO550-02DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 200V; If: 582A; Y4-M6; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 200V
Load current: 582A
Case: Y4-M6
Max. forward voltage: 1.08V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 200V; If: 582A; Y4-M6; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 200V
Load current: 582A
Case: Y4-M6
Max. forward voltage: 1.08V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IXFH74N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Mounting: THT
Gate charge: 107nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Mounting: THT
Gate charge: 107nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
на замовлення 157 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 482.07 грн |
| 3+ | 314.27 грн |
| 8+ | 297.24 грн |
| IXTQ74N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO3P
Mounting: THT
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO3P
Mounting: THT
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
товар відсутній
| IXTT74N20P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO268
Mounting: SMD
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO268
Mounting: SMD
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
товар відсутній
| DHG100X1200NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 50Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.97V
Load current: 50A x2
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 50Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.97V
Load current: 50A x2
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2195.67 грн |
| 2+ | 1928.17 грн |
| DHG10C600PB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; TO220AB; 40W
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Features of semiconductor devices: fast switching
Max. forward impulse current: 40A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 40W
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; TO220AB; 40W
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Features of semiconductor devices: fast switching
Max. forward impulse current: 40A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 40W
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 391.16 грн |
| 3+ | 327.75 грн |
| 7+ | 310.01 грн |
| 10+ | 309.3 грн |
| DHG10I1200PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Mounting: THT
Power dissipation: 85W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.23V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Mounting: THT
Power dissipation: 85W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.23V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 60A
на замовлення 162 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.32 грн |
| 10+ | 87.26 грн |
| 26+ | 83 грн |
| 50+ | 81.58 грн |
| DHG10I1200PM |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO220FP-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.13V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 65A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO220FP-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.13V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 65A
товар відсутній
| DHG10I1800PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Mounting: THT
Power dissipation: 85W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.33V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 300ns
Max. forward impulse current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Mounting: THT
Power dissipation: 85W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.33V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 300ns
Max. forward impulse current: 60A
товар відсутній