| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFT180N20X3HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Power dissipation: 780W Gate charge: 154nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 180A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET On-state resistance: 7.5mΩ Gate-source voltage: ±20V Reverse recovery time: 94ns |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IXTQ69N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns Mounting: THT Case: TO3P Power dissipation: 500W Kind of package: tube Polarisation: unipolar Gate charge: 156nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 330ns Drain-source voltage: 300V Drain current: 69A On-state resistance: 49mΩ Type of transistor: N-MOSFET |
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IXTA110N12T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 110A; 517W; TO263; 64ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 110A Power dissipation: 517W Case: TO263 On-state resistance: 14mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 64ns |
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DMA150YA1600NA | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A Case: SOT227B Mechanical mounting: screw Version: module Type of bridge rectifier: three-phase half bridge Max. off-state voltage: 1.6kV Max. forward voltage: 1.16V Load current: 150A Semiconductor structure: common anode Max. forward impulse current: 800A Electrical mounting: screw |
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DMA150YC1600NA | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A Case: SOT227B Mechanical mounting: screw Version: module Type of bridge rectifier: three-phase half bridge Max. off-state voltage: 1.6kV Max. forward voltage: 1.16V Load current: 150A Semiconductor structure: common cathode Max. forward impulse current: 700A Electrical mounting: screw |
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PLB150 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 2.5ms Kind of output: MOSFET |
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| PLB150STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 2.5ms Kind of output: MOSFET |
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PLB171P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 80mA Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 90Ω Mounting: SMT Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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| PLB171PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 80mA Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 90Ω Mounting: SMT Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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IXTH1N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us Case: TO247HV Mounting: THT Kind of package: tube Kind of channel: enhanced Reverse recovery time: 1.8µs Drain-source voltage: 3kV Drain current: 1A On-state resistance: 50Ω Type of transistor: N-MOSFET Power dissipation: 195W Polarisation: unipolar Features of semiconductor devices: standard power mosfet |
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IXTN22N100L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 22A On-state resistance: 0.6Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 0.27µC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 50A Case: SOT227B Semiconductor structure: single transistor |
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IXTX22N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 700W Case: PLUS247™ On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
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| MCC310-08io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 320A Case: Y2 Max. forward voltage: 1.32V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MCC310-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 320A Case: Y2 Max. forward voltage: 1.32V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MCC310-14io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 320A Case: Y2 Max. forward voltage: 1.32V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCC310-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.32V Max. forward impulse current: 9.8kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MCC310-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 320A Case: Y2 Max. forward voltage: 1.32V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
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IXDD604PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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IXDD604SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 291 шт: термін постачання 21-30 дні (днів) |
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IXDD604SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 867 шт: термін постачання 21-30 дні (днів) |
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| IXDD604SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
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IXDD609CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 882 шт: термін постачання 21-30 дні (днів) |
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IXDD609SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 856 шт: термін постачання 21-30 дні (днів) |
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IXDD609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 540 шт: термін постачання 21-30 дні (днів) |
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| IXDD609SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
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IXDD609YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 888 шт: термін постачання 21-30 дні (днів) |
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IXDD614CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 885 шт: термін постачання 21-30 дні (днів) |
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IXDD614PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 1084 шт: термін постачання 21-30 дні (днів) |
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IXDD614SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 802 шт: термін постачання 21-30 дні (днів) |
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| IXDD614SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
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IXDD614YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 649 шт: термін постачання 21-30 дні (днів) |
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IXDD630CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 244 шт: термін постачання 21-30 дні (днів) |
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IXDD630MCI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 9...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
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IXDD630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
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| CPC1510GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC Mounting: SMT Operating temperature: -40...85°C Max. operating current: 0.2A On-state resistance: 15Ω Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA |
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| CPC1540GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Max. operating current: 120mA Manufacturer series: OptoMOS On-state resistance: 25Ω Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA |
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| CPC1560GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Max. operating current: 300mA On-state resistance: 5.6Ω Turn-on time: 0.1ms Turn-off time: 400µs Body dimensions: 9.65x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA |
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| CPC1563GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Max. operating current: 120mA Manufacturer series: OptoMOS On-state resistance: 35Ω Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 600V AC; max. 600V DC Control current max.: 50mA |
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| CPC1593GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Max. operating current: 120mA Manufacturer series: OptoMOS On-state resistance: 35Ω Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 600V AC; max. 600V DC Control current max.: 50mA |
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DSEI12-06A | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W Power dissipation: 62W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.39mm Mounting: THT Case: TO220AC Max. off-state voltage: 0.6kV Max. forward voltage: 1.5V Load current: 14A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 100A |
на замовлення 495 шт: термін постачання 21-30 дні (днів) |
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DSEI12-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 11A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 75A Case: TO220AC Max. forward voltage: 2.2V Heatsink thickness: 1.14...1.39mm Power dissipation: 78W Reverse recovery time: 50ns Technology: FRED |
на замовлення 313 шт: термін постачання 21-30 дні (днів) |
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| DSEI12-12AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 11A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 75A Case: TO263ABHV Max. forward voltage: 2.2V Power dissipation: 78W Reverse recovery time: 50ns Technology: FRED |
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DSEI120-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 126A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 540A Case: TO247-2 Max. forward voltage: 1.12V Power dissipation: 357W Reverse recovery time: 35ns Technology: FRED |
на замовлення 236 шт: термін постачання 21-30 дні (днів) |
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DSEI120-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 109A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 540A Case: TO247-2 Max. forward voltage: 1.55V Power dissipation: 357W Reverse recovery time: 40ns Technology: FRED |
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DSEI120-12AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 109A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 540A Case: TO268AAHV Max. forward voltage: 1.55V Power dissipation: 357W Reverse recovery time: 40ns Technology: FRED |
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DSEI20-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 17A; tube; Ifsm: 130A; TO220AC; 78W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 17A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 130A Case: TO220AC Max. forward voltage: 1.87V Heatsink thickness: 0.64...1.39mm Power dissipation: 78W Reverse recovery time: 40ns Technology: FRED |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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DSEI25-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO220AC; 105W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 25A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 240A Case: TO220AC Max. forward voltage: 1.31V Heatsink thickness: 1.14...1.39mm Power dissipation: 105W Reverse recovery time: 35ns Technology: FRED |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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DSEI2x161-02P | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2 Max. off-state voltage: 200V Load current: 165A x2 Semiconductor structure: double independent Max. forward impulse current: 1.2kA Case: ECO-PAC 2 Max. forward voltage: 1.2V Electrical mounting: THT Mechanical mounting: screw Type of module: diode |
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DSEI2X161-12P | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2 Max. off-state voltage: 1.2kV Load current: 128A x2 Semiconductor structure: double independent Max. forward impulse current: 1.2kA Case: ECO-PAC 2 Max. forward voltage: 1.9V Electrical mounting: THT Mechanical mounting: screw Type of module: diode |
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DSEI2X30-04C | IXYS |
Category: Diode modules Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw Max. off-state voltage: 0.4kV Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 260A Case: SOT227B Max. forward voltage: 1.4V Technology: FRED Type of module: diode Mechanical mounting: screw Electrical mounting: screw |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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DSEI2X30-06C | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 260A Case: SOT227B Max. forward voltage: 1.4V Technology: FRED Type of module: diode Mechanical mounting: screw Electrical mounting: screw |
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DSEI2X30-10B | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw Max. off-state voltage: 1kV Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 200A Case: SOT227B Max. forward voltage: 2V Type of module: diode Mechanical mounting: screw Electrical mounting: screw |
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DSEI2X30-12B | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 27Ax2; SOT227B; screw Max. off-state voltage: 1.2kV Load current: 27A x2 Semiconductor structure: double independent Max. forward impulse current: 375A Case: SOT227B Max. forward voltage: 2.2V Type of module: diode Mechanical mounting: screw Electrical mounting: screw |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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DSEI2X31-04C | IXYS |
Category: Diode modules Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw Max. off-state voltage: 0.4kV Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 300A Case: SOT227B Max. forward voltage: 1.4V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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DSEI2X31-06C | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 260A Case: SOT227B Max. forward voltage: 1.4V Technology: FRED Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 131 шт: термін постачання 21-30 дні (днів) |
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DSEI2X31-10B | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw Max. off-state voltage: 1kV Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 200A Case: SOT227B Max. forward voltage: 2V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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DSEI2X31-12B | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw Max. off-state voltage: 1.2kV Load current: 28A x2 Semiconductor structure: double independent Max. forward impulse current: 210A Case: SOT227B Max. forward voltage: 2.55V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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DSEI2X61-02A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw Max. off-state voltage: 200V Load current: 71A x2 Semiconductor structure: double independent Max. forward impulse current: 0.95kA Case: SOT227B Max. forward voltage: 0.88V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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DSEI2X61-04C | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: SOT227B Max. off-state voltage: 0.6kV Max. forward voltage: 1.5V Load current: 60A x2 Semiconductor structure: double independent Max. forward impulse current: 600A |
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DSEI2x61-06P | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT Max. off-state voltage: 0.6kV Load current: 60A x2 Semiconductor structure: double independent Max. forward impulse current: 0.55kA Case: ECO-PAC 1 Max. forward voltage: 1.5V Electrical mounting: THT Mechanical mounting: screw Type of module: diode |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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| IXFT180N20X3HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 780W
Gate charge: 154nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 180A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Reverse recovery time: 94ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 780W
Gate charge: 154nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 180A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Reverse recovery time: 94ns
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 884.69 грн |
| 3+ | 776.8 грн |
| IXTQ69N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Mounting: THT
Case: TO3P
Power dissipation: 500W
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Mounting: THT
Case: TO3P
Power dissipation: 500W
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
товар відсутній
| IXTA110N12T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 110A; 517W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 110A
Power dissipation: 517W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 64ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 110A; 517W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 110A
Power dissipation: 517W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 64ns
товар відсутній
| DMA150YA1600NA |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Load current: 150A
Semiconductor structure: common anode
Max. forward impulse current: 800A
Electrical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Load current: 150A
Semiconductor structure: common anode
Max. forward impulse current: 800A
Electrical mounting: screw
товар відсутній
| DMA150YC1600NA |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Load current: 150A
Semiconductor structure: common cathode
Max. forward impulse current: 700A
Electrical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Load current: 150A
Semiconductor structure: common cathode
Max. forward impulse current: 700A
Electrical mounting: screw
товар відсутній
| PLB150 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
| PLB150STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
| PLB171P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 629.52 грн |
| 4+ | 266.03 грн |
| 9+ | 251.13 грн |
| PLB171PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| IXTH1N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 1.8µs
Drain-source voltage: 3kV
Drain current: 1A
On-state resistance: 50Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 1.8µs
Drain-source voltage: 3kV
Drain current: 1A
On-state resistance: 50Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
товар відсутній
| IXTN22N100L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.6Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 50A
Case: SOT227B
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.6Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 50A
Case: SOT227B
Semiconductor structure: single transistor
товар відсутній
| IXTX22N100L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товар відсутній
| MCC310-08io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCC310-12io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCC310-14io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCC310-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.32V
Max. forward impulse current: 9.8kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.32V
Max. forward impulse current: 9.8kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCC310-18io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| IXDD604PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 164 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.06 грн |
| 10+ | 83.71 грн |
| 11+ | 75.2 грн |
| 31+ | 70.94 грн |
| IXDD604SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 291 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 183.35 грн |
| 5+ | 151.1 грн |
| 7+ | 136.21 грн |
| 17+ | 129.11 грн |
| 100+ | 126.98 грн |
| IXDD604SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 867 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 110.78 грн |
| 5+ | 92.22 грн |
| 11+ | 76.62 грн |
| 30+ | 72.36 грн |
| IXDD604SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товар відсутній
| IXDD609CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 882 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 198.63 грн |
| 5+ | 163.16 грн |
| 6+ | 148.27 грн |
| 10+ | 146.85 грн |
| 16+ | 139.75 грн |
| 50+ | 136.92 грн |
| IXDD609SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 856 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 163.49 грн |
| 5+ | 134.08 грн |
| 7+ | 121.31 грн |
| 19+ | 114.92 грн |
| 100+ | 112.8 грн |
| IXDD609SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.03 грн |
| 5+ | 80.16 грн |
| 12+ | 72.36 грн |
| 32+ | 68.81 грн |
| 100+ | 66.68 грн |
| IXDD609SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
| IXDD609YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 888 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.55 грн |
| 3+ | 184.45 грн |
| 6+ | 153.23 грн |
| 15+ | 144.72 грн |
| IXDD614CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 885 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 317.05 грн |
| 3+ | 260.35 грн |
| 4+ | 244.75 грн |
| 10+ | 231.27 грн |
| 50+ | 222.04 грн |
| IXDD614PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 1084 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 161.96 грн |
| 5+ | 135.5 грн |
| 8+ | 108.54 грн |
| 22+ | 102.15 грн |
| IXDD614SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 802 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.29 грн |
| 5+ | 184.45 грн |
| 13+ | 174.51 грн |
| 100+ | 170.26 грн |
| IXDD614SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
товар відсутній
| IXDD614YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 649 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 352.19 грн |
| 3+ | 294.4 грн |
| 4+ | 247.58 грн |
| 10+ | 234.1 грн |
| 250+ | 224.88 грн |
| IXDD630CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 244 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 641.74 грн |
| 2+ | 429.19 грн |
| 6+ | 405.78 грн |
| IXDD630MCI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
| IXDD630YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
| CPC1510GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 0.2A
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 0.2A
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
товар відсутній
| CPC1540GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 25Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 25Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
товар відсутній
| CPC1560GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 300mA
On-state resistance: 5.6Ω
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 300mA
On-state resistance: 5.6Ω
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
товар відсутній
| CPC1563GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 35Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 35Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
товар відсутній
| CPC1593GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 35Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 35Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
товар відсутній
| DSEI12-06A | |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Power dissipation: 62W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 14A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Power dissipation: 62W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 14A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
на замовлення 495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.86 грн |
| 9+ | 100.03 грн |
| 23+ | 94.35 грн |
| 250+ | 92.93 грн |
| DSEI12-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.2V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.2V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
на замовлення 313 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.37 грн |
| 8+ | 107.12 грн |
| 22+ | 100.74 грн |
| 250+ | 98.61 грн |
| DSEI12-12AZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO263ABHV
Max. forward voltage: 2.2V
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO263ABHV
Max. forward voltage: 2.2V
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
товар відсутній
| DSEI120-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.12V
Power dissipation: 357W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.12V
Power dissipation: 357W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 236 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 827.39 грн |
| 2+ | 551.21 грн |
| 5+ | 521.42 грн |
| DSEI120-12A | |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.55V
Power dissipation: 357W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.55V
Power dissipation: 357W
Reverse recovery time: 40ns
Technology: FRED
товар відсутній
| DSEI120-12AZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO268AAHV
Max. forward voltage: 1.55V
Power dissipation: 357W
Reverse recovery time: 40ns
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO268AAHV
Max. forward voltage: 1.55V
Power dissipation: 357W
Reverse recovery time: 40ns
Technology: FRED
товар відсутній
| DSEI20-12A | |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 17A; tube; Ifsm: 130A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 17A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: TO220AC
Max. forward voltage: 1.87V
Heatsink thickness: 0.64...1.39mm
Power dissipation: 78W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 17A; tube; Ifsm: 130A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 17A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: TO220AC
Max. forward voltage: 1.87V
Heatsink thickness: 0.64...1.39mm
Power dissipation: 78W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.39 грн |
| 3+ | 224.88 грн |
| 5+ | 178.77 грн |
| 13+ | 168.84 грн |
| DSEI25-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO220AC; 105W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 240A
Case: TO220AC
Max. forward voltage: 1.31V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 105W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO220AC; 105W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 240A
Case: TO220AC
Max. forward voltage: 1.31V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 105W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.52 грн |
| 4+ | 114.92 грн |
| 10+ | 91.51 грн |
| 26+ | 86.55 грн |
| DSEI2x161-02P |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Case: ECO-PAC 2
Max. forward voltage: 1.2V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Case: ECO-PAC 2
Max. forward voltage: 1.2V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
товар відсутній
| DSEI2X161-12P |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Case: ECO-PAC 2
Max. forward voltage: 1.9V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Case: ECO-PAC 2
Max. forward voltage: 1.9V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
товар відсутній
| DSEI2X30-04C |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 260A
Case: SOT227B
Max. forward voltage: 1.4V
Technology: FRED
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 260A
Case: SOT227B
Max. forward voltage: 1.4V
Technology: FRED
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1633.39 грн |
| 2+ | 1433.71 грн |
| DSEI2X30-06C |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 260A
Case: SOT227B
Max. forward voltage: 1.4V
Technology: FRED
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 260A
Case: SOT227B
Max. forward voltage: 1.4V
Technology: FRED
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
товар відсутній
| DSEI2X30-10B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 200A
Case: SOT227B
Max. forward voltage: 2V
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 200A
Case: SOT227B
Max. forward voltage: 2V
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
товар відсутній
| DSEI2X30-12B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 27Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 27A x2
Semiconductor structure: double independent
Max. forward impulse current: 375A
Case: SOT227B
Max. forward voltage: 2.2V
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 27Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 27A x2
Semiconductor structure: double independent
Max. forward impulse current: 375A
Case: SOT227B
Max. forward voltage: 2.2V
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1580.67 грн |
| 2+ | 1387.6 грн |
| DSEI2X31-04C |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 300A
Case: SOT227B
Max. forward voltage: 1.4V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 300A
Case: SOT227B
Max. forward voltage: 1.4V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1674.64 грн |
| 2+ | 1470.6 грн |
| DSEI2X31-06C |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 260A
Case: SOT227B
Max. forward voltage: 1.4V
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 260A
Case: SOT227B
Max. forward voltage: 1.4V
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 131 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1678.46 грн |
| 2+ | 1474.15 грн |
| DSEI2X31-10B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 200A
Case: SOT227B
Max. forward voltage: 2V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 1kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 200A
Case: SOT227B
Max. forward voltage: 2V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1556.22 грн |
| 2+ | 1366.32 грн |
| DSEI2X31-12B | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 28A x2
Semiconductor structure: double independent
Max. forward impulse current: 210A
Case: SOT227B
Max. forward voltage: 2.55V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 28A x2
Semiconductor structure: double independent
Max. forward impulse current: 210A
Case: SOT227B
Max. forward voltage: 2.55V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1401.9 грн |
| 2+ | 1230.82 грн |
| DSEI2X61-02A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Max. off-state voltage: 200V
Load current: 71A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.95kA
Case: SOT227B
Max. forward voltage: 0.88V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Max. off-state voltage: 200V
Load current: 71A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.95kA
Case: SOT227B
Max. forward voltage: 0.88V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1883.97 грн |
| 2+ | 1654.34 грн |
| 3+ | 1653.63 грн |
| DSEI2X61-04C |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 600A
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 600A
товар відсутній
| DSEI2x61-06P |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.55kA
Case: ECO-PAC 1
Max. forward voltage: 1.5V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.55kA
Case: ECO-PAC 1
Max. forward voltage: 1.5V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1265.15 грн |
| 2+ | 1110.93 грн |
| 3+ | 1110.22 грн |
| 10+ | 1091.78 грн |