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IXTA32N20T IXYS
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
кількість в упаковці: 1 шт
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Технічний опис IXTA32N20T IXYS
Description: MOSFET N-CH 200V 32A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V.
Інші пропозиції IXTA32N20T
Фото | Назва | Виробник | Інформація |
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IXTA32N20T | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V |
товар відсутній |
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IXTA32N20T | Виробник : IXYS |
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товар відсутній |
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IXTA32N20T | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 32A Power dissipation: 200W Case: TO263 On-state resistance: 78mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 110ns |
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