Технічний опис IXFT40N85XHV Littelfuse
Description: MOSFET N-CH 850V 40A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V, Power Dissipation (Max): 860W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Інші пропозиції IXFT40N85XHV
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IXFT40N85XHV | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 40A Power dissipation: 860W Case: TO268HV On-state resistance: 0.145Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXFT40N85XHV | Виробник : IXYS |
Description: MOSFET N-CH 850V 40A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V Power Dissipation (Max): 860W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
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IXFT40N85XHV | Виробник : IXYS |
MOSFET 850V Ultra Junction X-Class Pwr MOSFET |
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IXFT40N85XHV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 40A Power dissipation: 860W Case: TO268HV On-state resistance: 0.145Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
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