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IXYT30N65C3H1HV IXYS IXY_30N65C3H1_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
MCMA65P1200TA MCMA65P1200TA IXYS MCMA65P1200TA.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 65A; Ifmax: 105A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 65A
Max. load current: 105A
Semiconductor structure: double series
Kind of package: bulk
Max. forward impulse current: 1.15kA
Case: TO240AA
Max. forward voltage: 1.17V
Gate current: 95/200mA
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
товар відсутній
MCMA85P1200TA MCMA85P1200TA IXYS MCMA85P1200TA.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.51V
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. load current: 135A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 95/200mA
товар відсутній
MCMA140P1200TA MCMA140P1200TA IXYS media?resourcetype=datasheets&itemid=45D2C86C-27FB-4B2A-B75B-F9EC81FECBCF&filename=Littelfuse-Power-Semiconductors-MCMA140P1200TA-Datasheet Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
DSI45-08A DSI45-08A IXYS DSI45-08A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 45A; tube; Ifsm: 410A; TO247-2; 270W
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
на замовлення 124 шт:
термін постачання 21-30 дні (днів)
2+288.56 грн
3+ 240.43 грн
5+ 191.18 грн
13+ 180.32 грн
120+ 178.15 грн
Мінімальне замовлення: 2
DSI45-12A DSI45-12A IXYS DSI45-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Mounting: THT
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
2+284.66 грн
5+ 185.39 грн
13+ 175.25 грн
Мінімальне замовлення: 2
DSSK60-0045B DSSK60-0045B IXYS DSSK60-0045B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 115W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Power dissipation: 115W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.65kA
Max. forward voltage: 0.44V
товар відсутній
MKE38RK600DFELB IXYS MKE38RK600DFELB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: diode/transistor
Reverse recovery time: 50ns
товар відсутній
DPG30I400HA DPG30I400HA IXYS DPG30I400HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.13V
Max. forward impulse current: 360A
Power dissipation: 160W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
2+240.99 грн
3+ 201.32 грн
6+ 152.08 грн
15+ 144.11 грн
Мінімальне замовлення: 2
LOC112 LOC112 IXYS LOC112P.pdf Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; 3.75kV; DIP8; 1A
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Case: DIP8
Trigger current: 1A
товар відсутній
LOC112S LOC112S IXYS LOC112P.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
3+146.62 грн
5+ 114.42 грн
10+ 84.01 грн
28+ 79.66 грн
Мінімальне замовлення: 3
LOC112STR LOC112STR IXYS LOC112P.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
MD16130S-DKM2MM IXYS media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Max. off-state voltage: 1.6kV
Max. load current: 204A
Max. forward voltage: 1.5V
Load current: 130A
Semiconductor structure: common cathode; double
Max. forward impulse current: 3.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package S
товар відсутній
IXDI609CI IXDI609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 801 шт:
термін постачання 21-30 дні (днів)
2+202.77 грн
3+ 166.56 грн
6+ 153.53 грн
10+ 149.91 грн
15+ 144.84 грн
50+ 139.77 грн
Мінімальне замовлення: 2
IXDI614CI IXDI614CI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 1115 шт:
термін постачання 21-30 дні (днів)
2+323.65 грн
3+ 265.78 грн
4+ 238.26 грн
10+ 225.22 грн
50+ 222.32 грн
250+ 217.26 грн
Мінімальне замовлення: 2
IXDI630CI IXDI630CI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
IXDI630MCI IXDI630MCI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
1+549.04 грн
2+ 420.75 грн
6+ 397.58 грн
50+ 382.37 грн
IXDN609CI IXDN609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO220-5
Mounting: THT
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
на замовлення 1117 шт:
термін постачання 21-30 дні (днів)
2+226.17 грн
3+ 188.29 грн
6+ 152.08 грн
16+ 144.11 грн
Мінімальне замовлення: 2
IXDN630CI IXDN630CI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Supply voltage: 12.5...35V
Output current: -30...30A
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; low-side
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
1+620.79 грн
2+ 435.96 грн
6+ 412.79 грн
10+ 412.06 грн
IXDN630MCI IXDN630MCI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 173 шт:
термін постачання 21-30 дні (днів)
1+520.97 грн
2+ 434.51 грн
6+ 411.34 грн
10+ 405.54 грн
50+ 396.13 грн
CPC1981Y CPC1981Y IXYS CPC1981.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+409.44 грн
5+ 178.87 грн
13+ 168.74 грн
CPC1983Y CPC1983Y IXYS CPC1983.pdf Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; -40÷85°C; 6Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
1+537.35 грн
4+ 235.36 грн
10+ 222.32 грн
CPC1983YE CPC1983YE IXYS CPC1983YE.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
1+541.24 грн
4+ 237.53 грн
10+ 224.5 грн
IXFR32N80P IXFR32N80P IXYS IXFR32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Polarisation: unipolar
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Gate charge: 150nC
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 800V
Power dissipation: 300W
товар відсутній
IXTH24P20 IXTH24P20 IXYS IXT_24P20.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO247-3; 250ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
IXTH450P2 IXTH450P2 IXYS IXTH(P,Q)450P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
IXTH50P10 IXTH50P10 IXYS IXT_50P10.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 180ns
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
1+634.05 грн
2+ 472.89 грн
5+ 447.55 грн
30+ 435.96 грн
IXTH6N50D2 IXTH6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
1+688.64 грн
3+ 371.51 грн
7+ 351.23 грн
IXTP56N15T IXTP56N15T IXYS IXTA(P)56N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 300W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 56A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товар відсутній
IXTP6N50D2 IXTP6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
на замовлення 167 шт:
термін постачання 21-30 дні (днів)
1+595.84 грн
3+ 316.47 грн
8+ 299.09 грн
IXTQ450P2 IXTQ450P2 IXYS IXTH(P,Q)450P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
IXTT24P20 IXTT24P20 IXYS IXT_24P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 300W
Gate charge: 150nC
Polarisation: unipolar
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Reverse recovery time: 250ns
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
1+766.63 грн
2+ 538.79 грн
5+ 509.1 грн
IXTT50P10 IXTT50P10 IXYS IXT_50P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO268
Reverse recovery time: 180ns
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+697.22 грн
2+ 519.96 грн
5+ 491.72 грн
IXTH6N100D2 IXTH6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
товар відсутній
CPC1593G CPC1593G IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
CPC1593GS CPC1593GS IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
CLA60MT1200NHB CLA60MT1200NHB IXYS CLA60MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 30A
Gate current: 60/80mA
Max. forward impulse current: 325A
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
1+503.81 грн
3+ 354.13 грн
7+ 334.57 грн
CLA60MT1200NHR CLA60MT1200NHR IXYS CLA60MT1200NHR.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: ISO247™
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 30A
Gate current: 60/80mA
Max. forward impulse current: 325A
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+527.99 грн
3+ 370.78 грн
7+ 350.51 грн
CLA80MT1200NHB CLA80MT1200NHB IXYS CLA80MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 440A
Case: TO247-3
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Max. load current: 40A
Gate current: 70/90mA
на замовлення 327 шт:
термін постачання 21-30 дні (днів)
1+626.25 грн
2+ 438.13 грн
6+ 414.23 грн
120+ 398.3 грн
CLA80MT1200NHR CLA80MT1200NHR IXYS CLA80MT1200NHR.pdf Category: Triacs
Description: Triac; 1.2kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 440A
Mounting: THT
Case: ISO247™
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 40A
Gate current: 70/90mA
Max. forward impulse current: 440A
товар відсутній
IXFP14N85XM IXFP14N85XM IXYS IXFP14N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
2+389.17 грн
3+ 325.16 грн
4+ 259.98 грн
9+ 245.5 грн
Мінімальне замовлення: 2
IXFP30N25X3M IXFP30N25X3M IXYS IXFP30N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
товар відсутній
IXFP60N25X3M IXFP60N25X3M IXYS IXFP60N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+454.68 грн
3+ 336.75 грн
7+ 317.92 грн
IXFP8N85XM IXFP8N85XM IXYS IXFP8N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 8A; 33W; TO220FP; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 125ns
товар відсутній
IXTP230N04T4M IXTP230N04T4M IXYS IXTP230N04T4M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товар відсутній
IXTP32N65XM IXTP32N65XM IXYS IXTP32N65XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
товар відсутній
IXTY10P15T IXTY10P15T IXYS IXT_10P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTY15P15T IXTY15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
товар відсутній
IXTY18P10T IXTY18P10T IXYS IXT_18P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
2+218.37 грн
5+ 182.49 грн
6+ 149.18 грн
16+ 141.22 грн
Мінімальне замовлення: 2
IXTY26P10T IXTY26P10T IXYS IXT_26P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
2+235.53 грн
5+ 196.98 грн
6+ 149.18 грн
16+ 141.22 грн
Мінімальне замовлення: 2
IXTY32P05T IXTY32P05T IXYS IXT_32P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 26ns
товар відсутній
IXTN210P10T IXTN210P10T IXYS IXTN210P10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -210A
Pulsed drain current: -800A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+2943.31 грн
IXTR210P10T IXTR210P10T IXYS IXTR210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Technology: TrenchP™
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 200ns
Kind of package: tube
Power dissipation: 390W
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1877.2 грн
2+ 1648.24 грн
3+ 1647.52 грн
30+ 1589.59 грн
IXTX210P10T IXTX210P10T IXYS IXTX210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Case: PLUS247™
Reverse recovery time: 200ns
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1741.5 грн
2+ 1529.48 грн
3+ 1528.75 грн
DPG10I200PA DPG10I200PA IXYS media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
4+102.95 грн
5+ 86.18 грн
10+ 76.04 грн
13+ 68.8 грн
34+ 65.18 грн
Мінімальне замовлення: 4
DPG10I200PM DPG10I200PM IXYS DPG10I200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
6+66.62 грн
10+ 57.21 грн
17+ 52.14 грн
45+ 49.24 грн
Мінімальне замовлення: 6
DPG10I300PA DPG10I300PA IXYS DPG10I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
6+62.28 грн
10+ 55.76 грн
17+ 51.42 грн
46+ 48.52 грн
Мінімальне замовлення: 6
DPG10I400PA DPG10I400PA IXYS DPG10I400PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
4+102.11 грн
10+ 87.63 грн
11+ 81.11 грн
29+ 76.76 грн
Мінімальне замовлення: 4
DPG10I400PM DPG10I400PM IXYS DPG10I400PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 105 шт:
термін постачання 21-30 дні (днів)
6+66.62 грн
10+ 57.93 грн
17+ 52.14 грн
45+ 49.24 грн
Мінімальне замовлення: 6
DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Case: ISOPLUS220™
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+404.76 грн
3+ 337.47 грн
4+ 270.85 грн
9+ 255.64 грн
IXYT30N65C3H1HV IXY_30N65C3H1_HV.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
MCMA65P1200TA MCMA65P1200TA.pdf
MCMA65P1200TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 65A; Ifmax: 105A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 65A
Max. load current: 105A
Semiconductor structure: double series
Kind of package: bulk
Max. forward impulse current: 1.15kA
Case: TO240AA
Max. forward voltage: 1.17V
Gate current: 95/200mA
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
товар відсутній
MCMA85P1200TA MCMA85P1200TA.pdf
MCMA85P1200TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.51V
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. load current: 135A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 95/200mA
товар відсутній
MCMA140P1200TA media?resourcetype=datasheets&itemid=45D2C86C-27FB-4B2A-B75B-F9EC81FECBCF&filename=Littelfuse-Power-Semiconductors-MCMA140P1200TA-Datasheet
MCMA140P1200TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
DSI45-08A DSI45-08A.pdf
DSI45-08A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 45A; tube; Ifsm: 410A; TO247-2; 270W
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: TO247-2
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
на замовлення 124 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+288.56 грн
3+ 240.43 грн
5+ 191.18 грн
13+ 180.32 грн
120+ 178.15 грн
Мінімальне замовлення: 2
DSI45-12A DSI45-12A.pdf
DSI45-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Mounting: THT
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+284.66 грн
5+ 185.39 грн
13+ 175.25 грн
Мінімальне замовлення: 2
DSSK60-0045B DSSK60-0045B.pdf
DSSK60-0045B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 115W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Power dissipation: 115W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.65kA
Max. forward voltage: 0.44V
товар відсутній
MKE38RK600DFELB MKE38RK600DFELB.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: diode/transistor
Reverse recovery time: 50ns
товар відсутній
DPG30I400HA DPG30I400HA.pdf
DPG30I400HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.13V
Max. forward impulse current: 360A
Power dissipation: 160W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+240.99 грн
3+ 201.32 грн
6+ 152.08 грн
15+ 144.11 грн
Мінімальне замовлення: 2
LOC112 LOC112P.pdf
LOC112
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; 3.75kV; DIP8; 1A
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Case: DIP8
Trigger current: 1A
товар відсутній
LOC112S LOC112P.pdf
LOC112S
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+146.62 грн
5+ 114.42 грн
10+ 84.01 грн
28+ 79.66 грн
Мінімальне замовлення: 3
LOC112STR LOC112P.pdf
LOC112STR
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
MD16130S-DKM2MM media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Max. off-state voltage: 1.6kV
Max. load current: 204A
Max. forward voltage: 1.5V
Load current: 130A
Semiconductor structure: common cathode; double
Max. forward impulse current: 3.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package S
товар відсутній
IXDI609CI IXDD609CI.pdf
IXDI609CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 801 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+202.77 грн
3+ 166.56 грн
6+ 153.53 грн
10+ 149.91 грн
15+ 144.84 грн
50+ 139.77 грн
Мінімальне замовлення: 2
IXDI614CI IXDD614CI-DTE.pdf
IXDI614CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 1115 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+323.65 грн
3+ 265.78 грн
4+ 238.26 грн
10+ 225.22 грн
50+ 222.32 грн
250+ 217.26 грн
Мінімальне замовлення: 2
IXDI630CI IXD_630.pdf
IXDI630CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
IXDI630MCI IXD_630.pdf
IXDI630MCI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+549.04 грн
2+ 420.75 грн
6+ 397.58 грн
50+ 382.37 грн
IXDN609CI IXDD609CI.pdf
IXDN609CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO220-5
Mounting: THT
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
на замовлення 1117 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+226.17 грн
3+ 188.29 грн
6+ 152.08 грн
16+ 144.11 грн
Мінімальне замовлення: 2
IXDN630CI IXD_630.pdf
IXDN630CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Supply voltage: 12.5...35V
Output current: -30...30A
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; low-side
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+620.79 грн
2+ 435.96 грн
6+ 412.79 грн
10+ 412.06 грн
IXDN630MCI IXD_630.pdf
IXDN630MCI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 173 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+520.97 грн
2+ 434.51 грн
6+ 411.34 грн
10+ 405.54 грн
50+ 396.13 грн
CPC1981Y CPC1981.pdf
CPC1981Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+409.44 грн
5+ 178.87 грн
13+ 168.74 грн
CPC1983Y CPC1983.pdf
CPC1983Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; -40÷85°C; 6Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+537.35 грн
4+ 235.36 грн
10+ 222.32 грн
CPC1983YE CPC1983YE.pdf
CPC1983YE
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+541.24 грн
4+ 237.53 грн
10+ 224.5 грн
IXFR32N80P IXFR32N80P.pdf
IXFR32N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Polarisation: unipolar
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Gate charge: 150nC
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 800V
Power dissipation: 300W
товар відсутній
IXTH24P20 IXT_24P20.pdf
IXTH24P20
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO247-3; 250ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
IXTH450P2 IXTH(P,Q)450P2.pdf
IXTH450P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
IXTH50P10 IXT_50P10.pdf
IXTH50P10
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO247-3
Reverse recovery time: 180ns
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+634.05 грн
2+ 472.89 грн
5+ 447.55 грн
30+ 435.96 грн
IXTH6N50D2 IXTA(H,P)6N50D2.pdf
IXTH6N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+688.64 грн
3+ 371.51 грн
7+ 351.23 грн
IXTP56N15T IXTA(P)56N15T.pdf
IXTP56N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 300W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 56A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товар відсутній
IXTP6N50D2 IXTA(H,P)6N50D2.pdf
IXTP6N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
на замовлення 167 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+595.84 грн
3+ 316.47 грн
8+ 299.09 грн
IXTQ450P2 IXTH(P,Q)450P2.pdf
IXTQ450P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
IXTT24P20 IXT_24P20.pdf
IXTT24P20
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 300W
Gate charge: 150nC
Polarisation: unipolar
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Reverse recovery time: 250ns
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+766.63 грн
2+ 538.79 грн
5+ 509.1 грн
IXTT50P10 IXT_50P10.pdf
IXTT50P10
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO268
Reverse recovery time: 180ns
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+697.22 грн
2+ 519.96 грн
5+ 491.72 грн
IXTH6N100D2 IXTA(H,P)6N100D2.pdf
IXTH6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
товар відсутній
CPC1593G CPC1593.pdf
CPC1593G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
CPC1593GS CPC1593.pdf
CPC1593GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
CLA60MT1200NHB CLA60MT1200NHB.pdf
CLA60MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 30A
Gate current: 60/80mA
Max. forward impulse current: 325A
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+503.81 грн
3+ 354.13 грн
7+ 334.57 грн
CLA60MT1200NHR CLA60MT1200NHR.pdf
CLA60MT1200NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Case: ISO247™
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 30A
Gate current: 60/80mA
Max. forward impulse current: 325A
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+527.99 грн
3+ 370.78 грн
7+ 350.51 грн
CLA80MT1200NHB CLA80MT1200NHB.pdf
CLA80MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 440A
Case: TO247-3
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Max. load current: 40A
Gate current: 70/90mA
на замовлення 327 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+626.25 грн
2+ 438.13 грн
6+ 414.23 грн
120+ 398.3 грн
CLA80MT1200NHR CLA80MT1200NHR.pdf
CLA80MT1200NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 440A
Mounting: THT
Case: ISO247™
Kind of package: tube
Type of thyristor: triac
Max. off-state voltage: 1.2kV
Max. load current: 40A
Gate current: 70/90mA
Max. forward impulse current: 440A
товар відсутній
IXFP14N85XM IXFP14N85XM.pdf
IXFP14N85XM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+389.17 грн
3+ 325.16 грн
4+ 259.98 грн
9+ 245.5 грн
Мінімальне замовлення: 2
IXFP30N25X3M IXFP30N25X3M.pdf
IXFP30N25X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
товар відсутній
IXFP60N25X3M IXFP60N25X3M.pdf
IXFP60N25X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+454.68 грн
3+ 336.75 грн
7+ 317.92 грн
IXFP8N85XM IXFP8N85XM.pdf
IXFP8N85XM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 8A; 33W; TO220FP; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 125ns
товар відсутній
IXTP230N04T4M IXTP230N04T4M.pdf
IXTP230N04T4M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товар відсутній
IXTP32N65XM IXTP32N65XM.pdf
IXTP32N65XM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 78W
Case: TO220FP
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 400ns
товар відсутній
IXTY10P15T IXT_10P15T.pdf
IXTY10P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTY15P15T IXT_15P15T.pdf
IXTY15P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
товар відсутній
IXTY18P10T IXT_18P10T.pdf
IXTY18P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+218.37 грн
5+ 182.49 грн
6+ 149.18 грн
16+ 141.22 грн
Мінімальне замовлення: 2
IXTY26P10T IXT_26P10T.pdf
IXTY26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+235.53 грн
5+ 196.98 грн
6+ 149.18 грн
16+ 141.22 грн
Мінімальне замовлення: 2
IXTY32P05T IXT_32P05T.pdf
IXTY32P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 26ns
товар відсутній
IXTN210P10T IXTN210P10T.pdf
IXTN210P10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -210A
Pulsed drain current: -800A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2943.31 грн
IXTR210P10T IXTR210P10T.pdf
IXTR210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Technology: TrenchP™
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 200ns
Kind of package: tube
Power dissipation: 390W
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1877.2 грн
2+ 1648.24 грн
3+ 1647.52 грн
30+ 1589.59 грн
IXTX210P10T IXTX210P10T.pdf
IXTX210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Case: PLUS247™
Reverse recovery time: 200ns
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1741.5 грн
2+ 1529.48 грн
3+ 1528.75 грн
DPG10I200PA media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet
DPG10I200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+102.95 грн
5+ 86.18 грн
10+ 76.04 грн
13+ 68.8 грн
34+ 65.18 грн
Мінімальне замовлення: 4
DPG10I200PM DPG10I200PM.pdf
DPG10I200PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Max. off-state voltage: 200V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+66.62 грн
10+ 57.21 грн
17+ 52.14 грн
45+ 49.24 грн
Мінімальне замовлення: 6
DPG10I300PA DPG10I300PA.pdf
DPG10I300PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 300V
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 140A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+62.28 грн
10+ 55.76 грн
17+ 51.42 грн
46+ 48.52 грн
Мінімальне замовлення: 6
DPG10I400PA DPG10I400PA.pdf
DPG10I400PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Case: TO220AC
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.03V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 65W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+102.11 грн
10+ 87.63 грн
11+ 81.11 грн
29+ 76.76 грн
Мінімальне замовлення: 4
DPG10I400PM DPG10I400PM.pdf
DPG10I400PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Case: TO220FP-2
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.32V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 150A
Power dissipation: 35W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 105 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+66.62 грн
10+ 57.93 грн
17+ 52.14 грн
45+ 49.24 грн
Мінімальне замовлення: 6
DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Case: ISOPLUS220™
Kind of package: tube
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.28V
Load current: 10A
Semiconductor structure: double series
Reverse recovery time: 45ns
Max. forward impulse current: 130A
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+404.76 грн
3+ 337.47 грн
4+ 270.85 грн
9+ 255.64 грн
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