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IXTA70N075T2 IXYS
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
кількість в упаковці: 1 шт
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Технічний опис IXTA70N075T2 IXYS
Description: MOSFET N-CH 75V 70A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V.
Інші пропозиції IXTA70N075T2
Фото | Назва | Виробник | Інформація |
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IXTA70N075T2 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V |
товар відсутній |
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IXTA70N075T2 | Виробник : IXYS |
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товар відсутній |
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IXTA70N075T2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Power dissipation: 150W Case: TO263 On-state resistance: 12mΩ Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 48ns |
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