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IXTA8N70X2 IXYS
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
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Технічний опис IXTA8N70X2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 8A, Power dissipation: 150W, Case: TO263, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 12nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Reverse recovery time: 200ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTA8N70X2
Фото | Назва | Виробник | Інформація |
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IXTA8N70X2 | Виробник : IXYS |
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товар відсутній |
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IXTA8N70X2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Power dissipation: 150W Case: TO263 On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
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