Технічний опис IXFX66N85X Littelfuse
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 850V, Drain current: 66A, Power dissipation: 1.25kW, Case: PLUS247™, On-state resistance: 65mΩ, Mounting: THT, Gate charge: 230nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Reverse recovery time: 250ns, кількість в упаковці: 1 шт.
Інші пропозиції IXFX66N85X
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IXFX66N85X | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 66A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 250ns кількість в упаковці: 1 шт |
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IXFX66N85X | Виробник : IXYS |
Description: MOSFET N-CH 850V 66A PLUS247-3 |
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IXFX66N85X | Виробник : IXYS |
MOSFET 850V Ultra Junction X-Class Pwr MOSFET |
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IXFX66N85X | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 66A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 250ns |
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