IXFX420N10T

IXFX420N10T Littelfuse


_mosfets_n-channel_trench_gate_ixf_420n10t_datasheet.pdf.pdf Виробник: Littelfuse
Trans MOSFET N-CH 100V 420A 3-Pin(3+Tab) PLUS 247
на замовлення 660 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+962.67 грн
Мінімальне замовлення: 300
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Технічний опис IXFX420N10T Littelfuse

Description: MOSFET N-CH 100V 420A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 420A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V, Power Dissipation (Max): 1670W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V.

Інші пропозиції IXFX420N10T

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IXFX420N10T IXFX420N10T Виробник : IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXFX420N10T IXFX420N10T Виробник : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_420n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 420A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V
товар відсутній
IXFX420N10T IXFX420N10T Виробник : IXYS media-3321190.pdf MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A
товар відсутній
IXFX420N10T IXFX420N10T Виробник : IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній