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IXFT88N30P IXYS
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Description: MOSFET N-CH 300V 88A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
30+ | 829.99 грн |
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Технічний опис IXFT88N30P IXYS
Description: MOSFET N-CH 300V 88A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.
Інші пропозиції IXFT88N30P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFT88N30P | Виробник : Littelfuse |
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товар відсутній |
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IXFT88N30P | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IXFT88N30P | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXFT88N30P | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |