![IXFX120N30T IXFX120N30T](https://www.mouser.com/images/mouserelectronics/lrg/TO_247_3_t.jpg)
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1093.57 грн |
10+ | 950.52 грн |
30+ | 803.54 грн |
60+ | 741.52 грн |
120+ | 700.4 грн |
270+ | 662.07 грн |
510+ | 649.52 грн |
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Технічний опис IXFX120N30T IXYS
Description: MOSFET N-CH 300V 120A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Інші пропозиції IXFX120N30T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFX120N30T | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Power dissipation: 960W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 265nC Kind of channel: enhanced Drain-source voltage: 300V Drain current: 120A On-state resistance: 24mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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IXFX120N30T | Виробник : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
товар відсутній |
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![]() |
IXFX120N30T | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Power dissipation: 960W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 265nC Kind of channel: enhanced Drain-source voltage: 300V Drain current: 120A On-state resistance: 24mΩ Type of transistor: N-MOSFET |
товар відсутній |