на замовлення 373 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1248.22 грн |
| 10+ | 1083.93 грн |
| 30+ | 923.48 грн |
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Технічний опис IXFT400N075T2 IXYS
Description: MOSFET N-CH 75V 400A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.
Інші пропозиції IXFT400N075T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFT400N075T2 | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns Case: TO268 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Power dissipation: 1kW Gate charge: 420nC Polarisation: unipolar Drain current: 400A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET On-state resistance: 2.3mΩ Reverse recovery time: 77ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFT400N075T2 | Виробник : IXYS |
Description: MOSFET N-CH 75V 400A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V |
товар відсутній |
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IXFT400N075T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns Case: TO268 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Power dissipation: 1kW Gate charge: 420nC Polarisation: unipolar Drain current: 400A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET On-state resistance: 2.3mΩ Reverse recovery time: 77ns |
товар відсутній |