Технічний опис IRF6797MTRPBF Infineon Technologies
Description: MOSFET N-CH 25V 36A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: DIRECTFET™ MX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V.
Інші пропозиції IRF6797MTRPBF
Фото | Назва | Виробник | Інформація |
Доступність |
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IRF6797MTRPBF | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 210A; 89W; DirectFET Kind of package: reel Drain-source voltage: 25V Drain current: 210A Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET кількість в упаковці: 4800 шт |
товар відсутній |
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IRF6797MTRPBF | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V |
товар відсутній |
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![]() |
IRF6797MTRPBF | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
![]() |
IRF6797MTRPBF | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 210A; 89W; DirectFET Kind of package: reel Drain-source voltage: 25V Drain current: 210A Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET |
товар відсутній |