IRF6898MTRPBF INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Power dissipation: 78W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4800 шт
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Технічний опис IRF6898MTRPBF INFINEON TECHNOLOGIES
Description: IRF6898 - 12V-300V N-CHANNEL POW, Packaging: Bulk, Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 2.8W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 100µA, Supplier Device Package: DirectFET™ Isometric MX, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V.
Інші пропозиції IRF6898MTRPBF
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IRF6898MTRPBF | Виробник : Infineon Technologies |
Description: IRF6898 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: DirectFET™ Isometric MX Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V |
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IRF6898MTRPBF | Виробник : Infineon Technologies |
MOSFET 25V 1 N-CH HEXFET 1.1mOhms 35nC |
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IRF6898MTRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 213A Power dissipation: 78W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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