BCR48PNH6433XTMA1

BCR48PNH6433XTMA1 Infineon Technologies


bcr48pn.pdf Виробник: Infineon Technologies
Trans Digital BJT NPN/PNP 50V 70mA/100mA 250mW Automotive 6-Pin SOT-363
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Технічний опис BCR48PNH6433XTMA1 Infineon Technologies

Description: TRANS NPN/PNP PREBIAS SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 70mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Frequency - Transition: 100MHz, 200MHz, Resistor - Base (R1): 47kOhms, 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: PG-SOT363-PO.

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BCR48PNH6433XTMA1 BCR48PNH6433XTMA1 Виробник : Infineon Technologies bcr48pn.pdf Trans Digital BJT NPN/PNP 50V 70mA/100mA 250mW Automotive AEC-Q101 6-Pin SOT-363
товар відсутній
BCR48PNH6433XTMA1 Виробник : INFINEON TECHNOLOGIES bcr48pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406c1ce60300 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 70mA
Collector-emitter voltage: 50V
Frequency: 100MHz
Kind of transistor: BRT; complementary pair
Base resistor: 47/2.2kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47/47kΩ
Power dissipation: 0.25W
кількість в упаковці: 10000 шт
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BCR48PNH6433XTMA1 BCR48PNH6433XTMA1 Виробник : Infineon Technologies bcr48pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406c1ce60300 Description: TRANS NPN/PNP PREBIAS SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 70mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz, 200MHz
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
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BCR48PNH6433XTMA1 BCR48PNH6433XTMA1 Виробник : Infineon Technologies Infineon-BCR48PN-DS-v01_01-en-748994.pdf Bipolar Transistors - Pre-Biased AF DIG TRANSISTORS
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BCR48PNH6433XTMA1 Виробник : INFINEON TECHNOLOGIES bcr48pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406c1ce60300 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 70mA
Collector-emitter voltage: 50V
Frequency: 100MHz
Kind of transistor: BRT; complementary pair
Base resistor: 47/2.2kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47/47kΩ
Power dissipation: 0.25W
товар відсутній