FS75R12W2T4B11BOMA1 Infineon Technologies
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Description: IGBT MOD 1200V 107A 375W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 5221.32 грн |
15+ | 4556.41 грн |
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Технічний опис FS75R12W2T4B11BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 107A 375W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 107 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 375 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V.
Інші пропозиції FS75R12W2T4B11BOMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FS75R12W2T4B11BOMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-EASY2B-2 Power dissipation: 375W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A кількість в упаковці: 1 шт |
товар відсутній |
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FS75R12W2T4B11BOMA1 | Виробник : Infineon Technologies |
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товар відсутній |
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FS75R12W2T4B11BOMA1 | Виробник : Infineon Technologies |
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товар відсутній |
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![]() |
FS75R12W2T4B11BOMA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
FS75R12W2T4B11BOMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-EASY2B-2 Power dissipation: 375W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A |
товар відсутній |