IPA50R199CPXKSA1 ROCHESTER ELECTRONICS
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Description: ROCHESTER ELECTRONICS - IPA50R199CPXKSA1 - IPA50R199 - 500V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
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Технічний опис IPA50R199CPXKSA1 ROCHESTER ELECTRONICS
Description: MOSFET N-CH 500V 17A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 660µA, Supplier Device Package: PG-TO220-3-31, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V.
Інші пропозиції IPA50R199CPXKSA1
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IPA50R199CPXKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPA50R199CPXKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPA50R199CPXKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPA50R199CPXKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Power dissipation: 139W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
![]() |
IPA50R199CPXKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 660µA Supplier Device Package: PG-TO220-3-31 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V |
товар відсутній |
|
![]() |
IPA50R199CPXKSA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
![]() |
IPA50R199CPXKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Power dissipation: 139W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |